{"id":"https://openalex.org/W2913338605","doi":"https://doi.org/10.1109/iedm.2018.8614579","title":"GaN Power Commercialization with Highest Quality-Highest Reliability 650V HEMTs-Requirements, Successes and Challenges","display_name":"GaN Power Commercialization with Highest Quality-Highest Reliability 650V HEMTs-Requirements, Successes and Challenges","publication_year":2018,"publication_date":"2018-12-01","ids":{"openalex":"https://openalex.org/W2913338605","doi":"https://doi.org/10.1109/iedm.2018.8614579","mag":"2913338605"},"language":"en","primary_location":{"id":"doi:10.1109/iedm.2018.8614579","doi":"https://doi.org/10.1109/iedm.2018.8614579","is_oa":false,"landing_page_url":"https://doi.org/10.1109/iedm.2018.8614579","pdf_url":null,"source":{"id":"https://openalex.org/S4210168112","display_name":"Technical digest - International Electron Devices Meeting/Technical digest","issn_l":"0163-1918","issn":["0163-1918","2156-017X"],"is_oa":false,"is_in_doaj":false,"is_core":false,"listed_in":[],"host_organization":"https://openalex.org/P4310319808","host_organization_name":"Institute of Electrical and Electronics Engineers","host_organization_lineage":["https://openalex.org/P4310319808"],"host_organization_lineage_names":["Institute of Electrical and Electronics Engineers"],"type":"conference"},"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"2018 IEEE International Electron Devices Meeting (IEDM)","raw_type":"proceedings-article"},"volume":null,"type":"conference-paper","indexed_in":["crossref"],"open_access":{"is_oa":false,"oa_status":"closed","oa_url":null,"any_repository_has_fulltext":false},"authorships":[{"author_position":"first","author":{"id":"https://openalex.org/A5058504142","display_name":"Primit Parikh","orcid":null,"observed_orcids":[]},"institutions":[{"id":"https://openalex.org/I4210088684","display_name":"Transphorm (United States)","ror":"https://ror.org/005x7bz67","country_code":"US","type":"company","lineage":["https://openalex.org/I4210088684"]}],"countries":["US"],"is_corresponding":false,"raw_author_name":"P. Parikh","raw_affiliation_strings":["Transphorm Inc., Goleta, CA, USA"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Transphorm Inc., Goleta, CA, USA","institution_ids":["https://openalex.org/I4210088684"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5007027098","display_name":"Yifeng Wu","orcid":"https://orcid.org/0000-0001-8572-1584","observed_orcids":["https://orcid.org/0000-0001-8572-1584"]},"institutions":[{"id":"https://openalex.org/I4210088684","display_name":"Transphorm (United States)","ror":"https://ror.org/005x7bz67","country_code":"US","type":"company","lineage":["https://openalex.org/I4210088684"]}],"countries":["US"],"is_corresponding":false,"raw_author_name":"Y. Wu","raw_affiliation_strings":["Transphorm Inc., Goleta, CA, USA"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Transphorm Inc., Goleta, CA, USA","institution_ids":["https://openalex.org/I4210088684"]}]},{"author_position":"middle","author":{"id":null,"display_name":"L. Shen","orcid":null,"observed_orcids":[]},"institutions":[{"id":"https://openalex.org/I4210088684","display_name":"Transphorm (United States)","ror":"https://ror.org/005x7bz67","country_code":"US","type":"company","lineage":["https://openalex.org/I4210088684"]}],"countries":["US"],"is_corresponding":false,"raw_author_name":"L. Shen","raw_affiliation_strings":["Transphorm Inc., Goleta, CA, USA"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Transphorm Inc., Goleta, CA, USA","institution_ids":["https://openalex.org/I4210088684"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5110470411","display_name":"Ron Barr","orcid":null,"observed_orcids":[]},"institutions":[{"id":"https://openalex.org/I4210088684","display_name":"Transphorm (United States)","ror":"https://ror.org/005x7bz67","country_code":"US","type":"company","lineage":["https://openalex.org/I4210088684"]}],"countries":["US"],"is_corresponding":false,"raw_author_name":"R. Barr","raw_affiliation_strings":["Transphorm Inc., Goleta, CA, USA"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Transphorm Inc., Goleta, CA, USA","institution_ids":["https://openalex.org/I4210088684"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5030500140","display_name":"S. Chowdhury","orcid":null,"observed_orcids":[]},"institutions":[{"id":"https://openalex.org/I4210088684","display_name":"Transphorm (United States)","ror":"https://ror.org/005x7bz67","country_code":"US","type":"company","lineage":["https://openalex.org/I4210088684"]}],"countries":["US"],"is_corresponding":false,"raw_author_name":"S. Chowdhury","raw_affiliation_strings":["Transphorm Inc., Goleta, CA, USA"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Transphorm Inc., Goleta, CA, USA","institution_ids":["https://openalex.org/I4210088684"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5059519009","display_name":"John Gritters","orcid":null,"observed_orcids":[]},"institutions":[{"id":"https://openalex.org/I4210088684","display_name":"Transphorm (United States)","ror":"https://ror.org/005x7bz67","country_code":"US","type":"company","lineage":["https://openalex.org/I4210088684"]}],"countries":["US"],"is_corresponding":false,"raw_author_name":"J. Gritters","raw_affiliation_strings":["Transphorm Inc., Goleta, CA, USA"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Transphorm Inc., Goleta, CA, USA","institution_ids":["https://openalex.org/I4210088684"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5063238175","display_name":"Sung Yea","orcid":null,"observed_orcids":[]},"institutions":[{"id":"https://openalex.org/I4210088684","display_name":"Transphorm (United States)","ror":"https://ror.org/005x7bz67","country_code":"US","type":"company","lineage":["https://openalex.org/I4210088684"]}],"countries":["US"],"is_corresponding":false,"raw_author_name":"S. Yea","raw_affiliation_strings":["Transphorm Inc., Goleta, CA, USA"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Transphorm Inc., Goleta, CA, USA","institution_ids":["https://openalex.org/I4210088684"]}]},{"author_position":"middle","author":{"id":null,"display_name":"P. Smith","orcid":null,"observed_orcids":[]},"institutions":[{"id":"https://openalex.org/I4210088684","display_name":"Transphorm (United States)","ror":"https://ror.org/005x7bz67","country_code":"US","type":"company","lineage":["https://openalex.org/I4210088684"]}],"countries":["US"],"is_corresponding":false,"raw_author_name":"P. Smith","raw_affiliation_strings":["Transphorm Inc., Goleta, CA, USA"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Transphorm Inc., Goleta, CA, USA","institution_ids":["https://openalex.org/I4210088684"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5007096669","display_name":"L. McCarthy","orcid":null,"observed_orcids":[]},"institutions":[{"id":"https://openalex.org/I4210088684","display_name":"Transphorm (United States)","ror":"https://ror.org/005x7bz67","country_code":"US","type":"company","lineage":["https://openalex.org/I4210088684"]}],"countries":["US"],"is_corresponding":false,"raw_author_name":"L. McCarthy","raw_affiliation_strings":["Transphorm Inc., Goleta, CA, USA"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Transphorm Inc., Goleta, CA, USA","institution_ids":["https://openalex.org/I4210088684"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5051361118","display_name":"Ron Birkhahn","orcid":null,"observed_orcids":[]},"institutions":[{"id":"https://openalex.org/I4210088684","display_name":"Transphorm (United States)","ror":"https://ror.org/005x7bz67","country_code":"US","type":"company","lineage":["https://openalex.org/I4210088684"]}],"countries":["US"],"is_corresponding":false,"raw_author_name":"R. Birkhahn","raw_affiliation_strings":["Transphorm Inc., Goleta, CA, USA"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Transphorm Inc., Goleta, CA, USA","institution_ids":["https://openalex.org/I4210088684"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5000367467","display_name":"M. Moore","orcid":null,"observed_orcids":[]},"institutions":[{"id":"https://openalex.org/I4210088684","display_name":"Transphorm (United States)","ror":"https://ror.org/005x7bz67","country_code":"US","type":"company","lineage":["https://openalex.org/I4210088684"]}],"countries":["US"],"is_corresponding":false,"raw_author_name":"M. Moore","raw_affiliation_strings":["Transphorm Inc., Goleta, CA, USA"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Transphorm Inc., Goleta, CA, USA","institution_ids":["https://openalex.org/I4210088684"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5058037812","display_name":"J. McKay","orcid":null,"observed_orcids":[]},"institutions":[{"id":"https://openalex.org/I4210088684","display_name":"Transphorm (United States)","ror":"https://ror.org/005x7bz67","country_code":"US","type":"company","lineage":["https://openalex.org/I4210088684"]}],"countries":["US"],"is_corresponding":false,"raw_author_name":"J. McKay","raw_affiliation_strings":["Transphorm Inc., Goleta, CA, USA"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Transphorm Inc., Goleta, CA, USA","institution_ids":["https://openalex.org/I4210088684"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5067380060","display_name":"H. Clement","orcid":null,"observed_orcids":[]},"institutions":[{"id":"https://openalex.org/I4210088684","display_name":"Transphorm (United States)","ror":"https://ror.org/005x7bz67","country_code":"US","type":"company","lineage":["https://openalex.org/I4210088684"]}],"countries":["US"],"is_corresponding":false,"raw_author_name":"H. Clement","raw_affiliation_strings":["Transphorm Inc., Goleta, CA, USA"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Transphorm Inc., Goleta, CA, USA","institution_ids":["https://openalex.org/I4210088684"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5011558464","display_name":"Umesh K. Mishra","orcid":"https://orcid.org/0000-0001-8084-9247","observed_orcids":["https://orcid.org/0000-0001-8084-9247","https://orcid.org/0009-0008-5615-1891","https://orcid.org/0000-0002-8331-8916"]},"institutions":[{"id":"https://openalex.org/I4210088684","display_name":"Transphorm (United States)","ror":"https://ror.org/005x7bz67","country_code":"US","type":"company","lineage":["https://openalex.org/I4210088684"]}],"countries":["US"],"is_corresponding":false,"raw_author_name":"U. Mishra","raw_affiliation_strings":["Transphorm Inc., Goleta, CA, USA"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Transphorm Inc., Goleta, CA, USA","institution_ids":["https://openalex.org/I4210088684"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5102789053","display_name":"R. Lal","orcid":"https://orcid.org/0000-0003-1950-7365","observed_orcids":["https://orcid.org/0000-0003-1950-7365"]},"institutions":[{"id":"https://openalex.org/I4210088684","display_name":"Transphorm (United States)","ror":"https://ror.org/005x7bz67","country_code":"US","type":"company","lineage":["https://openalex.org/I4210088684"]}],"countries":["US"],"is_corresponding":false,"raw_author_name":"R. Lal","raw_affiliation_strings":["Transphorm Inc., Goleta, CA, USA"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Transphorm Inc., Goleta, CA, USA","institution_ids":["https://openalex.org/I4210088684"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5081955069","display_name":"Philip Zuk","orcid":null,"observed_orcids":[]},"institutions":[{"id":"https://openalex.org/I4210088684","display_name":"Transphorm (United States)","ror":"https://ror.org/005x7bz67","country_code":"US","type":"company","lineage":["https://openalex.org/I4210088684"]}],"countries":["US"],"is_corresponding":false,"raw_author_name":"P. Zuk","raw_affiliation_strings":["Transphorm Inc., Goleta, CA, USA"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Transphorm Inc., Goleta, CA, USA","institution_ids":["https://openalex.org/I4210088684"]}]},{"author_position":"middle","author":{"id":null,"display_name":"T. Hosoda","orcid":null,"observed_orcids":[]},"institutions":[],"countries":[],"is_corresponding":false,"raw_author_name":"T. Hosoda","raw_affiliation_strings":["Transphorm Japan, Yokohama, Japan"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Transphorm Japan, Yokohama, Japan","institution_ids":[]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5028800017","display_name":"Ken Shono","orcid":null,"observed_orcids":[]},"institutions":[],"countries":[],"is_corresponding":false,"raw_author_name":"K. Shono","raw_affiliation_strings":["Transphorm Japan, Yokohama, Japan"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Transphorm Japan, Yokohama, Japan","institution_ids":[]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5080001358","display_name":"Kenji Imanishi","orcid":null,"observed_orcids":[]},"institutions":[],"countries":[],"is_corresponding":false,"raw_author_name":"K. Imanishi","raw_affiliation_strings":["Transphorm Japan, Yokohama, Japan"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Transphorm Japan, Yokohama, Japan","institution_ids":[]}]},{"author_position":"last","author":{"id":null,"display_name":"Y. Asai","orcid":null,"observed_orcids":[]},"institutions":[],"countries":[],"is_corresponding":false,"raw_author_name":"Y. Asai","raw_affiliation_strings":["Transphorm Japan, Yokohama, Japan"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Transphorm Japan, Yokohama, Japan","institution_ids":[]}]}],"institutions":[],"countries_distinct_count":1,"institutions_distinct_count":1,"corresponding_author_ids":[],"corresponding_institution_ids":[],"apc_list":null,"apc_paid":null,"fwci":1.9716,"has_fulltext":false,"cited_by_count":8,"citation_normalized_percentile":{"value":0.87157034,"is_in_top_1_percent":false,"is_in_top_10_percent":false},"cited_by_percentile_year":{"min":89,"max":96},"biblio":{"volume":null,"issue":null,"first_page":"19.7.1","last_page":"19.7.4"},"is_retracted":false,"is_paratext":false,"is_xpac":false,"primary_topic":{"id":"https://openalex.org/T10099","display_name":"GaN-based semiconductor devices and materials","score":0.8515999913215637,"subfield":{"id":"https://openalex.org/subfields/3104","display_name":"Condensed Matter Physics"},"field":{"id":"https://openalex.org/fields/31","display_name":"Physics and Astronomy"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},"topics":[{"id":"https://openalex.org/T10099","display_name":"GaN-based semiconductor devices and materials","score":0.8515999913215637,"subfield":{"id":"https://openalex.org/subfields/3104","display_name":"Condensed Matter Physics"},"field":{"id":"https://openalex.org/fields/31","display_name":"Physics and Astronomy"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T10361","display_name":"Silicon Carbide Semiconductor Technologies","score":0.1453000009059906,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T10175","display_name":"Advanced DC-DC Converters","score":0.0013000000035390258,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}}],"keywords":[{"id":"https://openalex.org/keywords/gallium-nitride","display_name":"gallium nitride","score":0.8619999885559082},{"id":"https://openalex.org/keywords/gan-hemt","display_name":"GaN HEMT","score":0.8610000014305115},{"id":"https://openalex.org/keywords/gan-fet","display_name":"GaN FET","score":0.7829999923706055},{"id":"https://openalex.org/keywords/high-voltage-power-conversion","display_name":"high-voltage power conversion","score":0.6869999766349792},{"id":"https://openalex.org/keywords/power-supply-reliability","display_name":"power supply reliability","score":0.5239999890327454},{"id":"https://openalex.org/keywords/photovoltaic-inverter","display_name":"photovoltaic inverter","score":0.7139999866485596},{"id":"https://openalex.org/keywords/dc-dc-converter","display_name":"DC-DC converter","score":0.9430000185966492},{"id":"https://openalex.org/keywords/servo-drives","display_name":"servo drives","score":0.8389999866485596},{"id":"https://openalex.org/keywords/server-power-supply","display_name":"server power supply","score":0.7009999752044678},{"id":"https://openalex.org/keywords/commercialization","display_name":"commercialization","score":0.5479999780654907}],"concepts":[{"id":"https://openalex.org/C2778871202","wikidata":"https://www.wikidata.org/wiki/Q411713","display_name":"Gallium nitride","level":3,"score":0.792090654373169},{"id":"https://openalex.org/C2778422915","wikidata":"https://www.wikidata.org/wiki/Q10302051","display_name":"Converters","level":3,"score":0.7291829586029053},{"id":"https://openalex.org/C43214815","wikidata":"https://www.wikidata.org/wiki/Q7310987","display_name":"Reliability (semiconductor)","level":3,"score":0.7039546370506287},{"id":"https://openalex.org/C2780625559","wikidata":"https://www.wikidata.org/wiki/Q5152592","display_name":"Commercialization","level":2,"score":0.5538288354873657},{"id":"https://openalex.org/C163258240","wikidata":"https://www.wikidata.org/wiki/Q25342","display_name":"Power (physics)","level":2,"score":0.5247533321380615},{"id":"https://openalex.org/C129014197","wikidata":"https://www.wikidata.org/wiki/Q906544","display_name":"Power semiconductor device","level":3,"score":0.5091673731803894},{"id":"https://openalex.org/C119599485","wikidata":"https://www.wikidata.org/wiki/Q43035","display_name":"Electrical engineering","level":1,"score":0.4901011884212494},{"id":"https://openalex.org/C172385210","wikidata":"https://www.wikidata.org/wiki/Q5339","display_name":"Transistor","level":3,"score":0.4879416823387146},{"id":"https://openalex.org/C165801399","wikidata":"https://www.wikidata.org/wiki/Q25428","display_name":"Voltage","level":2,"score":0.466953843832016},{"id":"https://openalex.org/C192562407","wikidata":"https://www.wikidata.org/wiki/Q228736","display_name":"Materials science","level":0,"score":0.43422818183898926},{"id":"https://openalex.org/C526921623","wikidata":"https://www.wikidata.org/wiki/Q190117","display_name":"Automotive industry","level":2,"score":0.43191292881965637},{"id":"https://openalex.org/C41008148","wikidata":"https://www.wikidata.org/wiki/Q21198","display_name":"Computer science","level":0,"score":0.38473108410835266},{"id":"https://openalex.org/C24326235","wikidata":"https://www.wikidata.org/wiki/Q126095","display_name":"Electronic engineering","level":1,"score":0.3838346004486084},{"id":"https://openalex.org/C127413603","wikidata":"https://www.wikidata.org/wiki/Q11023","display_name":"Engineering","level":0,"score":0.25913184881210327},{"id":"https://openalex.org/C171250308","wikidata":"https://www.wikidata.org/wiki/Q11468","display_name":"Nanotechnology","level":1,"score":0.12390944361686707},{"id":"https://openalex.org/C121332964","wikidata":"https://www.wikidata.org/wiki/Q413","display_name":"Physics","level":0,"score":0.07850480079650879},{"id":"https://openalex.org/C144133560","wikidata":"https://www.wikidata.org/wiki/Q4830453","display_name":"Business","level":0,"score":0.06771722435951233},{"id":"https://openalex.org/C2779227376","wikidata":"https://www.wikidata.org/wiki/Q6505497","display_name":"Layer (electronics)","level":2,"score":0.0},{"id":"https://openalex.org/C62520636","wikidata":"https://www.wikidata.org/wiki/Q944","display_name":"Quantum mechanics","level":1,"score":0.0},{"id":"https://openalex.org/C162853370","wikidata":"https://www.wikidata.org/wiki/Q39809","display_name":"Marketing","level":1,"score":0.0},{"id":"https://openalex.org/C146978453","wikidata":"https://www.wikidata.org/wiki/Q3798668","display_name":"Aerospace engineering","level":1,"score":0.0}],"mesh":[],"locations_count":1,"locations":[{"id":"doi:10.1109/iedm.2018.8614579","doi":"https://doi.org/10.1109/iedm.2018.8614579","is_oa":false,"landing_page_url":"https://doi.org/10.1109/iedm.2018.8614579","pdf_url":null,"source":{"id":"https://openalex.org/S4210168112","display_name":"Technical digest - International Electron Devices Meeting/Technical digest","issn_l":"0163-1918","issn":["0163-1918","2156-017X"],"is_oa":false,"is_in_doaj":false,"is_core":false,"listed_in":[],"host_organization":"https://openalex.org/P4310319808","host_organization_name":"Institute of Electrical and Electronics Engineers","host_organization_lineage":["https://openalex.org/P4310319808"],"host_organization_lineage_names":["Institute of Electrical and Electronics Engineers"],"type":"conference"},"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"2018 IEEE International Electron Devices Meeting (IEDM)","raw_type":"proceedings-article"}],"best_oa_location":null,"sustainable_development_goals":[{"score":0.75,"display_name":"Affordable and clean energy","id":"https://metadata.un.org/sdg/7"},{"score":0.5378999710083008,"display_name":"Industry, innovation and infrastructure","id":"https://metadata.un.org/sdg/9"}],"sustainable_development_goals_aurora":[{"score":0.6299999952316284,"display_name":"Affordable and clean energy","id":"https://metadata.un.org/sdg/7"}],"study_designs":[],"awards":[],"funders":[],"has_content":{"grobid_xml":false,"pdf":false},"content_urls":null,"referenced_works_count":6,"referenced_works":["https://openalex.org/W1998859438","https://openalex.org/W2201078567","https://openalex.org/W2555892847","https://openalex.org/W2582462008","https://openalex.org/W6650383002","https://openalex.org/W6730350812"],"related_works":["https://openalex.org/W3184337920","https://openalex.org/W2518573636","https://openalex.org/W2903141268","https://openalex.org/W7095538865","https://openalex.org/W2036418646","https://openalex.org/W6925236046","https://openalex.org/W3037328125","https://openalex.org/W2019237857","https://openalex.org/W2990154169","https://openalex.org/W4246125125"],"abstract_inverted_index":{"Gallium":[0],"Nitride":[1],"(GaN)":[2],"is":[3],"now":[4],"a":[5],"popular":[6],"choice":[7],"for":[8,30,67],"power":[9,31,48],"conversion.":[10,32],"High":[11],"voltage":[12],"(HV)":[13],"GaN":[14,77,95],"HEMTs":[15],"(GaN":[16],"FETs)":[17],"in":[18,38,83],"the":[19,27,91],"range":[20],"of":[21,94],"650\u2013900":[22],"volts":[23],"are":[24,97],"emerging":[25],"as":[26,85,87],"next":[28],"standard":[29],"This":[33],"paper":[34],"highlights":[35],"key":[36],"successes":[37],"efficient":[39],"and":[40,58],"compact":[41],"converters/inverters":[42],"ranging":[43],"from":[44],"high":[45,75],"performance":[46,82],"gaming/crypto-mining":[47],"supplies,":[49],"titanium":[50],"class":[51],"server":[52],"power,":[53],"servo":[54],"drives,":[55],"PV":[56],"inverters,":[57],"automotive":[59],"OBCs,":[60],"dc-dc":[61],"converters,":[62],"pole":[63],"charges.":[64],"The":[65],"reasons":[66],"market":[68],"success":[69],"including":[70],"unmatched":[71],"quality":[72],"&":[73],"reliability,":[74],"volume":[76],"on":[78],"Si":[79],"manufacturing,":[80],"robust":[81],"applications":[84],"well":[86],"challenges":[88],"to":[89],"achieve":[90],"full":[92],"potential":[93],"FETs":[96],"presented.":[98]},"counts_by_year":[{"year":2026,"cited_by_count":1},{"year":2025,"cited_by_count":1},{"year":2024,"cited_by_count":1},{"year":2023,"cited_by_count":2},{"year":2021,"cited_by_count":3}],"updated_date":"2026-10-17T09:40:24.721904","created_date":"2019-02-21T00:00:00"}