{"id":"https://openalex.org/W2907587989","doi":"https://doi.org/10.1002/aelm.201800745","title":"2D Material\u2010Based Vertical Double Heterojunction Bipolar Transistors with High Current Amplification","display_name":"2D Material\u2010Based Vertical Double Heterojunction Bipolar Transistors with High Current Amplification","publication_year":2018,"publication_date":"2018-12-27","ids":{"openalex":"https://openalex.org/W2907587989","doi":"https://doi.org/10.1002/aelm.201800745","mag":"2907587989"},"language":"en","primary_location":{"id":"doi:10.1002/aelm.201800745","doi":"https://doi.org/10.1002/aelm.201800745","is_oa":false,"landing_page_url":"https://doi.org/10.1002/aelm.201800745","pdf_url":null,"source":{"id":"https://openalex.org/S2765003236","display_name":"Advanced Electronic Materials","issn_l":"2199-160X","issn":["2199-160X"],"is_oa":false,"is_in_doaj":true,"is_core":true,"listed_in":["cwts-core","doaj","dongbi-b","jufo-2","norway-1","oarl","poland-140","russia-white-list-1","vabb-shw"],"host_organization":"https://openalex.org/P4310320595","host_organization_name":"Wiley","host_organization_lineage":["https://openalex.org/P4310320595"],"host_organization_lineage_names":["Wiley"],"type":"journal"},"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"Advanced Electronic Materials","raw_type":"journal-article"},"volume":null,"type":"article","is_traditional":true,"indexed_in":["crossref","doaj"],"open_access":{"is_oa":false,"oa_status":"closed","oa_url":null,"any_repository_has_fulltext":false},"authorships":[{"author_position":"first","author":{"id":"https://openalex.org/A5041966045","display_name":"Geonyeop Lee","orcid":null,"observed_orcids":[]},"institutions":[{"id":"https://openalex.org/I197347611","display_name":"Korea University","ror":"https://ror.org/047dqcg40","country_code":"KR","type":"education","lineage":["https://openalex.org/I197347611"]}],"countries":["KR"],"is_corresponding":false,"raw_author_name":"Geonyeop Lee","raw_affiliation_strings":["Department of Chemical and Biological Engineering, Korea University, Seoul, 02841 Korea"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Department of Chemical and Biological Engineering, Korea University, Seoul, 02841 Korea","institution_ids":["https://openalex.org/I197347611"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5085381025","display_name":"S. J. Pearton","orcid":"https://orcid.org/0000-0001-6498-1256","observed_orcids":["https://orcid.org/0000-0001-6498-1256"]},"institutions":[{"id":"https://openalex.org/I33213144","display_name":"University of Florida","ror":"https://ror.org/02y3ad647","country_code":"US","type":"education","lineage":["https://openalex.org/I33213144"]}],"countries":["US"],"is_corresponding":false,"raw_author_name":"Stephen J. Pearton","raw_affiliation_strings":["Department of Materials Science and Engineering, University of Florida, Gainesville, FL, 32611 USA"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Department of Materials Science and Engineering, University of Florida, Gainesville, FL, 32611 USA","institution_ids":["https://openalex.org/I33213144"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5100641969","display_name":"Fan Ren","orcid":"https://orcid.org/0000-0001-9234-019X","observed_orcids":["https://orcid.org/0000-0001-9234-019X"]},"institutions":[{"id":"https://openalex.org/I33213144","display_name":"University of Florida","ror":"https://ror.org/02y3ad647","country_code":"US","type":"education","lineage":["https://openalex.org/I33213144"]}],"countries":["US"],"is_corresponding":false,"raw_author_name":"Fan Ren","raw_affiliation_strings":["Department of Chemical Engineering, University of Florida, Gainesville, FL, 32611 USA"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Department of Chemical Engineering, University of Florida, Gainesville, FL, 32611 USA","institution_ids":["https://openalex.org/I33213144"]}]},{"author_position":"last","author":{"id":"https://openalex.org/A5100462779","display_name":"Jihyun Kim","orcid":"https://orcid.org/0000-0002-5634-8394","observed_orcids":["https://orcid.org/0000-0002-5634-8394","https://orcid.org/0000-0002-5119-6627"]},"institutions":[{"id":"https://openalex.org/I197347611","display_name":"Korea University","ror":"https://ror.org/047dqcg40","country_code":"KR","type":"education","lineage":["https://openalex.org/I197347611"]}],"countries":["KR"],"is_corresponding":true,"raw_author_name":"Jihyun Kim","raw_affiliation_strings":["Department of Chemical and Biological Engineering, Korea University, Seoul, 02841 Korea"],"raw_orcid":"https://orcid.org/0000-0002-5634-8394","affiliations":[{"raw_affiliation_string":"Department of Chemical and Biological Engineering, Korea University, Seoul, 02841 Korea","institution_ids":["https://openalex.org/I197347611"]}]}],"institutions":[],"countries_distinct_count":2,"institutions_distinct_count":2,"corresponding_author_ids":["https://openalex.org/A5100462779"],"corresponding_institution_ids":["https://openalex.org/I197347611"],"apc_list":{"value":3560,"currency":"USD","value_usd":3560},"apc_paid":null,"fwci":1.3984,"has_fulltext":false,"cited_by_count":37,"citation_normalized_percentile":{"value":0.79115795,"is_in_top_1_percent":false,"is_in_top_10_percent":false},"cited_by_percentile_year":{"min":91,"max":99},"biblio":{"volume":"5","issue":"3","first_page":null,"last_page":null},"is_retracted":false,"is_paratext":false,"is_xpac":false,"primary_topic":{"id":"https://openalex.org/T10275","display_name":"2D Materials and Applications","score":0.9994999766349792,"subfield":{"id":"https://openalex.org/subfields/2505","display_name":"Materials Chemistry"},"field":{"id":"https://openalex.org/fields/25","display_name":"Materials Science"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},"topics":[{"id":"https://openalex.org/T10275","display_name":"2D Materials and Applications","score":0.9994999766349792,"subfield":{"id":"https://openalex.org/subfields/2505","display_name":"Materials Chemistry"},"field":{"id":"https://openalex.org/fields/25","display_name":"Materials Science"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T10558","display_name":"Advancements in Semiconductor Devices and Circuit Design","score":0.00039999998989515007,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T10083","display_name":"Graphene research and applications","score":9.999999747378752e-05,"subfield":{"id":"https://openalex.org/subfields/2505","display_name":"Materials Chemistry"},"field":{"id":"https://openalex.org/fields/25","display_name":"Materials Science"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}}],"keywords":[{"id":"https://openalex.org/keywords/heterojunction-bipolar-transistors","display_name":"heterojunction bipolar transistors","score":0.9020000100135803},{"id":"https://openalex.org/keywords/double-heterojunction-bipolar-transistors","display_name":"double heterojunction bipolar transistors","score":0.9049999713897705},{"id":"https://openalex.org/keywords/2d-materials","display_name":"two-dimensional materials","score":0.9610000252723694},{"id":"https://openalex.org/keywords/mos2","display_name":"MoS2","score":0.7879999876022339},{"id":"https://openalex.org/keywords/wse2","display_name":"WSe2","score":0.9879999756813049},{"id":"https://openalex.org/keywords/van-der-waals-heterostructures","display_name":"van der Waals heterostructures","score":0.8740000128746033},{"id":"https://openalex.org/keywords/band-gap-tuning","display_name":"band gap tuning","score":0.8259999752044678},{"id":"https://openalex.org/keywords/dry-transfer","display_name":"dry transfer","score":0.656000018119812},{"id":"https://openalex.org/keywords/npn-transistors","display_name":"NPN transistors","score":0.7990000247955322},{"id":"https://openalex.org/keywords/current-amplification","display_name":"current amplification","score":0.9210000038146973},{"id":"https://openalex.org/keywords/p-n-junction","display_name":"p-n junction","score":0.8450000286102295}],"concepts":[{"id":"https://openalex.org/C167456791","wikidata":"https://www.wikidata.org/wiki/Q4737729","display_name":"Homojunction","level":3,"score":0.8715667724609375},{"id":"https://openalex.org/C192562407","wikidata":"https://www.wikidata.org/wiki/Q228736","display_name":"Materials science","level":0,"score":0.85002201795578},{"id":"https://openalex.org/C79794668","wikidata":"https://www.wikidata.org/wiki/Q1616270","display_name":"Heterojunction","level":2,"score":0.8220474720001221},{"id":"https://openalex.org/C173408217","wikidata":"https://www.wikidata.org/wiki/Q1428898","display_name":"Heterojunction bipolar transistor","level":5,"score":0.7920351028442383},{"id":"https://openalex.org/C49040817","wikidata":"https://www.wikidata.org/wiki/Q193091","display_name":"Optoelectronics","level":1,"score":0.7735551595687866},{"id":"https://openalex.org/C23061349","wikidata":"https://www.wikidata.org/wiki/Q188946","display_name":"Bipolar junction transistor","level":4,"score":0.7531651854515076},{"id":"https://openalex.org/C46918542","wikidata":"https://www.wikidata.org/wiki/Q1648344","display_name":"Common emitter","level":2,"score":0.6082645654678345},{"id":"https://openalex.org/C58127512","wikidata":"https://www.wikidata.org/wiki/Q5747796","display_name":"Heterostructure-emitter bipolar transistor","level":5,"score":0.5502727031707764},{"id":"https://openalex.org/C172385210","wikidata":"https://www.wikidata.org/wiki/Q5339","display_name":"Transistor","level":3,"score":0.45605558156967163},{"id":"https://openalex.org/C119599485","wikidata":"https://www.wikidata.org/wiki/Q43035","display_name":"Electrical engineering","level":1,"score":0.12590357661247253},{"id":"https://openalex.org/C165801399","wikidata":"https://www.wikidata.org/wiki/Q25428","display_name":"Voltage","level":2,"score":0.10365036129951477},{"id":"https://openalex.org/C127413603","wikidata":"https://www.wikidata.org/wiki/Q11023","display_name":"Engineering","level":0,"score":0.0}],"mesh":[],"locations_count":1,"locations":[{"id":"doi:10.1002/aelm.201800745","doi":"https://doi.org/10.1002/aelm.201800745","is_oa":false,"landing_page_url":"https://doi.org/10.1002/aelm.201800745","pdf_url":null,"source":{"id":"https://openalex.org/S2765003236","display_name":"Advanced Electronic Materials","issn_l":"2199-160X","issn":["2199-160X"],"is_oa":false,"is_in_doaj":true,"is_core":true,"listed_in":["cwts-core","doaj","dongbi-b","jufo-2","norway-1","oarl","poland-140","russia-white-list-1","vabb-shw"],"host_organization":"https://openalex.org/P4310320595","host_organization_name":"Wiley","host_organization_lineage":["https://openalex.org/P4310320595"],"host_organization_lineage_names":["Wiley"],"type":"journal"},"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"Advanced Electronic Materials","raw_type":"journal-article"}],"best_oa_location":null,"sustainable_development_goals":[],"study_designs":[],"awards":[{"id":"https://openalex.org/G1387318426","display_name":null,"funder_award_id":"20172010104830","funder_id":"https://openalex.org/F4320321681","funder_display_name":"Ministry of Trade, Industry and Energy"},{"id":"https://openalex.org/G2890249590","display_name":null,"funder_award_id":"NRF-2017M1A2A2087351","funder_id":"https://openalex.org/F4320322120","funder_display_name":"National Research Foundation of Korea"}],"funders":[{"id":"https://openalex.org/F4320321373","display_name":"Korea University","ror":"https://ror.org/047dqcg40"},{"id":"https://openalex.org/F4320321681","display_name":"Ministry of Trade, Industry and Energy","ror":"https://ror.org/008nkqk13"},{"id":"https://openalex.org/F4320322030","display_name":"Ministry of Science, ICT and Future Planning","ror":"https://ror.org/032e49973"},{"id":"https://openalex.org/F4320322120","display_name":"National Research Foundation of Korea","ror":"https://ror.org/013aysd81"},{"id":"https://openalex.org/F4320335199","display_name":"Korea Institute of Energy Technology Evaluation and Planning","ror":"https://ror.org/02zq38y32"}],"has_content":{"grobid_xml":false,"pdf":false},"content_urls":null,"referenced_works_count":50,"referenced_works":["https://openalex.org/W324268386","https://openalex.org/W341387266","https://openalex.org/W601962549","https://openalex.org/W617071296","https://openalex.org/W647695763","https://openalex.org/W1832666745","https://openalex.org/W1954379666","https://openalex.org/W1973167231","https://openalex.org/W1973722511","https://openalex.org/W1980879206","https://openalex.org/W1981251285","https://openalex.org/W2000825186","https://openalex.org/W2007810866","https://openalex.org/W2014104495","https://openalex.org/W2019162530","https://openalex.org/W2023333002","https://openalex.org/W2027012071","https://openalex.org/W2048610167","https://openalex.org/W2056280638","https://openalex.org/W2058614868","https://openalex.org/W2066978116","https://openalex.org/W2073321070","https://openalex.org/W2075134976","https://openalex.org/W2081794540","https://openalex.org/W2086842021","https://openalex.org/W2086942885","https://openalex.org/W2090471101","https://openalex.org/W2096421416","https://openalex.org/W2125149656","https://openalex.org/W2133860269","https://openalex.org/W2154249635","https://openalex.org/W2294591969","https://openalex.org/W2297724148","https://openalex.org/W2324192564","https://openalex.org/W2346149434","https://openalex.org/W2422290206","https://openalex.org/W2475096219","https://openalex.org/W2498106012","https://openalex.org/W2522892643","https://openalex.org/W2600971422","https://openalex.org/W2743891971","https://openalex.org/W2763286725","https://openalex.org/W2763778962","https://openalex.org/W2769736223","https://openalex.org/W2773320758","https://openalex.org/W2783701601","https://openalex.org/W2800120486","https://openalex.org/W2800930077","https://openalex.org/W2810808553","https://openalex.org/W4255820507"],"related_works":["https://openalex.org/W2922069430","https://openalex.org/W3204065781","https://openalex.org/W2797777669","https://openalex.org/W2934399503","https://openalex.org/W2793822551","https://openalex.org/W2939015071","https://openalex.org/W2783701601","https://openalex.org/W6891953362","https://openalex.org/W2754051333","https://openalex.org/W4394953506"],"abstract_inverted_index":{"Abstract":[0],"The":[1,107],"heterojunction":[2,71,148],"bipolar":[3,11],"transistor":[4,13],"(HBT)":[5],"differs":[6],"from":[7,92],"the":[8,59,110,144],"classical":[9],"homojunction":[10],"junction":[12],"in":[14,82,118],"that":[15],"each":[16],"emitter\u2010base\u2010collector":[17],"layer":[18],"is":[19],"composed":[20,126],"of":[21,34,38,58,109,127,147],"a":[22],"different":[23],"semiconductor":[24],"material.":[25],"2D":[26],"material":[27],"(2DM)\u2010based":[28],"heterojunctions":[29],"have":[30,77],"attracted":[31],"attention":[32],"because":[33],"their":[35],"wide":[36],"range":[37],"fundamental":[39],"physical":[40],"and":[41,115],"electrical":[42,131],"properties.":[43],"Moreover,":[44],"strain\u2010free":[45],"heterostructures":[46],"formed":[47],"by":[48],"van":[49],"der":[50],"Waals":[51],"interaction":[52],"allows":[53],"true":[54],"bandgap":[55],"engineering":[56],"regardless":[57],"lattice":[60],"constant":[61],"mismatch.":[62],"These":[63,123,138],"characteristics":[64,132],"make":[65],"it":[66],"possible":[67],"to":[68,80,142],"fabricate":[69],"high\u2010performance":[70],"devices":[72,150],"such":[73],"as":[74],"HBTs,":[75],"which":[76],"been":[78],"difficult":[79],"implement":[81],"conventional":[83],"epitaxy.":[84],"Herein,":[85],"NPN":[86,124],"double":[87],"HBTs":[88],"(DHBTs)":[89],"are":[90,140],"constructed":[91],"vertically":[93],"stacked":[94],"2DMs":[95,128],"(n\u2010MoS":[96],"2":[97,99,101],"/p\u2010WSe":[98],"/n\u2010MoS":[100],")":[102],"using":[103],"dry":[104],"transfer":[105],"technique.":[106],"formation":[108],"two":[111],"P\u2013N":[112],"junctions,":[113,117],"base\u2010emitter,":[114],"base\u2010collector":[116],"DHBTs,":[119],"was":[120],"experimentally":[121],"observed.":[122],"DHBTs":[125],"showed":[129],"excellent":[130],"with":[133],"highly":[134],"amplified":[135],"current":[136],"modulation.":[137],"results":[139],"expected":[141],"extend":[143],"application":[145],"field":[146],"electronic":[149],"based":[151],"on":[152],"various":[153],"2DMs.":[154]},"counts_by_year":[{"year":2026,"cited_by_count":1},{"year":2025,"cited_by_count":3},{"year":2024,"cited_by_count":4},{"year":2023,"cited_by_count":8},{"year":2022,"cited_by_count":5},{"year":2021,"cited_by_count":6},{"year":2020,"cited_by_count":6},{"year":2019,"cited_by_count":4}],"updated_date":"2026-10-30T12:39:25.321706","created_date":"2019-01-11T00:00:00"}