{"id":"https://openalex.org/W2907186160","doi":"https://doi.org/10.7567/1882-0786/aaf62a","title":"Hafnium silicate gate dielectrics in GaN metal oxide semiconductor capacitors","display_name":"Hafnium silicate gate dielectrics in GaN metal oxide semiconductor capacitors","publication_year":2019,"publication_date":"2019-01-01","ids":{"openalex":"https://openalex.org/W2907186160","doi":"https://doi.org/10.7567/1882-0786/aaf62a","mag":"2907186160"},"language":"en","primary_location":{"id":"doi:10.7567/1882-0786/aaf62a","doi":"https://doi.org/10.7567/1882-0786/aaf62a","is_oa":true,"landing_page_url":"https://doi.org/10.7567/1882-0786/aaf62a","pdf_url":"https://iopscience.iop.org/article/10.7567/1882-0786/aaf62a/pdf","source":{"id":"https://openalex.org/S54409865","display_name":"Applied Physics Express","issn_l":"1882-0778","issn":["1882-0778","1882-0786"],"is_oa":false,"is_in_doaj":true,"is_core":true,"listed_in":["cwts-core","doaj","dongbi-b","jufo-1","norway-1","oarl","poland-70","russia-white-list-1"],"host_organization":"https://openalex.org/P4310311669","host_organization_name":"Institute of Physics","host_organization_lineage":["https://openalex.org/P4310311669"],"host_organization_lineage_names":["Institute of Physics"],"type":"journal"},"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"Applied Physics Express","raw_type":"journal-article"},"volume":null,"type":"article","is_traditional":true,"indexed_in":["crossref","doaj"],"open_access":{"is_oa":true,"oa_status":"bronze","oa_url":"https://iopscience.iop.org/article/10.7567/1882-0786/aaf62a/pdf","any_repository_has_fulltext":false},"authorships":[{"author_position":"first","author":{"id":"https://openalex.org/A5070528860","display_name":"Toshihide Nabatame","orcid":"https://orcid.org/0000-0002-5973-0230","observed_orcids":["https://orcid.org/0000-0002-5973-0230"]},"institutions":[{"id":"https://openalex.org/I205401836","display_name":"National Institute for Materials Science","ror":"https://ror.org/026v1ze26","country_code":"JP","type":"facility","lineage":["https://openalex.org/I205401836"]}],"countries":["JP"],"is_corresponding":true,"raw_author_name":"Toshihide Nabatame","raw_affiliation_strings":["National Institute for Materials Science (NIMS), 1-1 Namiki, Tsukuba, 305-0044, Japan"],"raw_orcid":"https://orcid.org/0000-0002-5973-0230","affiliations":[{"raw_affiliation_string":"National Institute for Materials Science (NIMS), 1-1 Namiki, Tsukuba, 305-0044, Japan","institution_ids":["https://openalex.org/I205401836"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5006382521","display_name":"Erika Maeda","orcid":null,"observed_orcids":[]},"institutions":[{"id":"https://openalex.org/I171481255","display_name":"Shibaura Institute of Technology","ror":"https://ror.org/020wjcq07","country_code":"JP","type":"education","lineage":["https://openalex.org/I171481255"]},{"id":"https://openalex.org/I205401836","display_name":"National Institute for Materials Science","ror":"https://ror.org/026v1ze26","country_code":"JP","type":"facility","lineage":["https://openalex.org/I205401836"]}],"countries":["JP"],"is_corresponding":false,"raw_author_name":"Erika Maeda","raw_affiliation_strings":["Department of Applied Chemistry, Faculty of Engineering, Shibaura Institute of Technology, 3-7-5, Toyosu, Koto-ku, Tokyo 135-8548, Japan","National Institute for Materials Science (NIMS), 1-1 Namiki, Tsukuba, 305-0044, Japan"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Department of Applied Chemistry, Faculty of Engineering, Shibaura Institute of Technology, 3-7-5, Toyosu, Koto-ku, Tokyo 135-8548, Japan","institution_ids":["https://openalex.org/I171481255"]},{"raw_affiliation_string":"National Institute for Materials Science (NIMS), 1-1 Namiki, Tsukuba, 305-0044, Japan","institution_ids":["https://openalex.org/I205401836"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5103898376","display_name":"Mari Inoue","orcid":null,"observed_orcids":[]},"institutions":[{"id":"https://openalex.org/I205401836","display_name":"National Institute for Materials Science","ror":"https://ror.org/026v1ze26","country_code":"JP","type":"facility","lineage":["https://openalex.org/I205401836"]}],"countries":["JP"],"is_corresponding":false,"raw_author_name":"Mari Inoue","raw_affiliation_strings":["National Institute for Materials Science (NIMS), 1-1 Namiki, Tsukuba, 305-0044, Japan"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"National Institute for Materials Science (NIMS), 1-1 Namiki, Tsukuba, 305-0044, Japan","institution_ids":["https://openalex.org/I205401836"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5103833443","display_name":"Kazuya Yuge","orcid":null,"observed_orcids":[]},"institutions":[{"id":"https://openalex.org/I171481255","display_name":"Shibaura Institute of Technology","ror":"https://ror.org/020wjcq07","country_code":"JP","type":"education","lineage":["https://openalex.org/I171481255"]},{"id":"https://openalex.org/I205401836","display_name":"National Institute for Materials Science","ror":"https://ror.org/026v1ze26","country_code":"JP","type":"facility","lineage":["https://openalex.org/I205401836"]}],"countries":["JP"],"is_corresponding":false,"raw_author_name":"Kazuya Yuge","raw_affiliation_strings":["Department of Applied Chemistry, Faculty of Engineering, Shibaura Institute of Technology, 3-7-5, Toyosu, Koto-ku, Tokyo 135-8548, Japan","National Institute for Materials Science (NIMS), 1-1 Namiki, Tsukuba, 305-0044, Japan"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Department of Applied Chemistry, Faculty of Engineering, Shibaura Institute of Technology, 3-7-5, Toyosu, Koto-ku, Tokyo 135-8548, Japan","institution_ids":["https://openalex.org/I171481255"]},{"raw_affiliation_string":"National Institute for Materials Science (NIMS), 1-1 Namiki, Tsukuba, 305-0044, Japan","institution_ids":["https://openalex.org/I205401836"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5113895151","display_name":"Masafumi Hirose","orcid":null,"observed_orcids":[]},"institutions":[{"id":"https://openalex.org/I171481255","display_name":"Shibaura Institute of Technology","ror":"https://ror.org/020wjcq07","country_code":"JP","type":"education","lineage":["https://openalex.org/I171481255"]},{"id":"https://openalex.org/I205401836","display_name":"National Institute for Materials Science","ror":"https://ror.org/026v1ze26","country_code":"JP","type":"facility","lineage":["https://openalex.org/I205401836"]}],"countries":["JP"],"is_corresponding":false,"raw_author_name":"Masafumi Hirose","raw_affiliation_strings":["Department of Applied Chemistry, Faculty of Engineering, Shibaura Institute of Technology, 3-7-5, Toyosu, Koto-ku, Tokyo 135-8548, Japan","National Institute for Materials Science (NIMS), 1-1 Namiki, Tsukuba, 305-0044, Japan"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Department of Applied Chemistry, Faculty of Engineering, Shibaura Institute of Technology, 3-7-5, Toyosu, Koto-ku, Tokyo 135-8548, Japan","institution_ids":["https://openalex.org/I171481255"]},{"raw_affiliation_string":"National Institute for Materials Science (NIMS), 1-1 Namiki, Tsukuba, 305-0044, Japan","institution_ids":["https://openalex.org/I205401836"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5065648063","display_name":"Koji Shiozaki","orcid":null,"observed_orcids":[]},"institutions":[{"id":"https://openalex.org/I4405286711","display_name":"Institute of Materials and Systems for Sustainability, Nagoya University","ror":"https://ror.org/02wb1d827","country_code":"JP","type":"facility","lineage":["https://openalex.org/I4405286711","https://openalex.org/I60134161"]},{"id":"https://openalex.org/I60134161","display_name":"Nagoya University","ror":"https://ror.org/04chrp450","country_code":"JP","type":"education","lineage":["https://openalex.org/I60134161"]}],"countries":["JP"],"is_corresponding":false,"raw_author_name":"Koji Shiozaki","raw_affiliation_strings":["Institute of Materials and Systems for Sustainability, Nagoya University, Nagoya 464-8601, Japan"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Institute of Materials and Systems for Sustainability, Nagoya University, Nagoya 464-8601, Japan","institution_ids":["https://openalex.org/I4405286711","https://openalex.org/I60134161"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5079576642","display_name":"Naoki Ikeda","orcid":"https://orcid.org/0000-0002-9552-7467","observed_orcids":["https://orcid.org/0000-0002-9552-7467"]},"institutions":[{"id":"https://openalex.org/I205401836","display_name":"National Institute for Materials Science","ror":"https://ror.org/026v1ze26","country_code":"JP","type":"facility","lineage":["https://openalex.org/I205401836"]}],"countries":["JP"],"is_corresponding":false,"raw_author_name":"Naoki Ikeda","raw_affiliation_strings":["National Institute for Materials Science (NIMS), 1-1 Namiki, Tsukuba, 305-0044, Japan"],"raw_orcid":"https://orcid.org/0000-0002-9552-7467","affiliations":[{"raw_affiliation_string":"National Institute for Materials Science (NIMS), 1-1 Namiki, Tsukuba, 305-0044, Japan","institution_ids":["https://openalex.org/I205401836"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5025258968","display_name":"Tomoji Ohishi","orcid":"https://orcid.org/0000-0001-7332-3001","observed_orcids":["https://orcid.org/0000-0001-7332-3001"]},"institutions":[{"id":"https://openalex.org/I171481255","display_name":"Shibaura Institute of Technology","ror":"https://ror.org/020wjcq07","country_code":"JP","type":"education","lineage":["https://openalex.org/I171481255"]}],"countries":["JP"],"is_corresponding":false,"raw_author_name":"Tomoji Ohishi","raw_affiliation_strings":["Department of Applied Chemistry, Faculty of Engineering, Shibaura Institute of Technology, 3-7-5, Toyosu, Koto-ku, Tokyo 135-8548, Japan"],"raw_orcid":"https://orcid.org/0000-0001-7332-3001","affiliations":[{"raw_affiliation_string":"Department of Applied Chemistry, Faculty of Engineering, Shibaura Institute of Technology, 3-7-5, Toyosu, Koto-ku, Tokyo 135-8548, Japan","institution_ids":["https://openalex.org/I171481255"]}]},{"author_position":"last","author":{"id":"https://openalex.org/A5028299707","display_name":"Akihiko Ohi","orcid":"https://orcid.org/0000-0003-4638-0099","observed_orcids":["https://orcid.org/0000-0003-4638-0099"]},"institutions":[{"id":"https://openalex.org/I205401836","display_name":"National Institute for Materials Science","ror":"https://ror.org/026v1ze26","country_code":"JP","type":"facility","lineage":["https://openalex.org/I205401836"]}],"countries":["JP"],"is_corresponding":false,"raw_author_name":"Akihiko Ohi","raw_affiliation_strings":["National Institute for Materials Science (NIMS), 1-1 Namiki, Tsukuba, 305-0044, Japan"],"raw_orcid":"https://orcid.org/0000-0003-4638-0099","affiliations":[{"raw_affiliation_string":"National Institute for Materials Science (NIMS), 1-1 Namiki, Tsukuba, 305-0044, Japan","institution_ids":["https://openalex.org/I205401836"]}]}],"institutions":[],"countries_distinct_count":1,"institutions_distinct_count":4,"corresponding_author_ids":["https://openalex.org/A5070528860"],"corresponding_institution_ids":["https://openalex.org/I205401836"],"apc_list":{"value":2365,"currency":"USD","value_usd":2365},"apc_paid":null,"fwci":1.5351,"has_fulltext":true,"cited_by_count":41,"citation_normalized_percentile":{"value":0.813506,"is_in_top_1_percent":false,"is_in_top_10_percent":false},"cited_by_percentile_year":{"min":93,"max":99},"biblio":{"volume":"12","issue":"1","first_page":"011009","last_page":"011009"},"is_retracted":false,"is_paratext":false,"is_xpac":false,"primary_topic":{"id":"https://openalex.org/T10472","display_name":"Semiconductor materials and devices","score":0.8871999979019165,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},"topics":[{"id":"https://openalex.org/T10472","display_name":"Semiconductor materials and devices","score":0.8871999979019165,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T10099","display_name":"GaN-based semiconductor devices and materials","score":0.09529999643564224,"subfield":{"id":"https://openalex.org/subfields/3104","display_name":"Condensed Matter Physics"},"field":{"id":"https://openalex.org/fields/31","display_name":"Physics and Astronomy"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T12808","display_name":"Ferroelectric and Negative Capacitance Devices","score":0.009700000286102295,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}}],"keywords":[{"id":"https://openalex.org/keywords/hafnium-silicate","display_name":"hafnium silicate","score":0.9959999918937683},{"id":"https://openalex.org/keywords/gate-dielectric","display_name":"gate dielectric","score":0.878000020980835},{"id":"https://openalex.org/keywords/high-k-dielectrics","display_name":"high-k dielectrics","score":0.7990000247955322},{"id":"https://openalex.org/keywords/dielectric-constant","display_name":"dielectric constant","score":0.9179999828338623},{"id":"https://openalex.org/keywords/flat-band-voltage","display_name":"flat-band voltage","score":0.8460000157356262},{"id":"https://openalex.org/keywords/interface-state-density","display_name":"interface state density","score":0.984000027179718},{"id":"https://openalex.org/keywords/breakdown-field","display_name":"breakdown field","score":0.949999988079071},{"id":"https://openalex.org/keywords/amorphous-hafnium-oxide","display_name":"amorphous hafnium oxide","score":0.7770000100135803},{"id":"https://openalex.org/keywords/hafnium-oxide","display_name":"hafnium oxide","score":0.7250000238418579}],"concepts":[{"id":"https://openalex.org/C192562407","wikidata":"https://www.wikidata.org/wiki/Q228736","display_name":"Materials science","level":0,"score":0.7902718782424927},{"id":"https://openalex.org/C52192207","wikidata":"https://www.wikidata.org/wiki/Q5322","display_name":"Capacitor","level":3,"score":0.769331693649292},{"id":"https://openalex.org/C546638069","wikidata":"https://www.wikidata.org/wiki/Q1119","display_name":"Hafnium","level":3,"score":0.7453742623329163},{"id":"https://openalex.org/C133386390","wikidata":"https://www.wikidata.org/wiki/Q184996","display_name":"Dielectric","level":2,"score":0.7434870004653931},{"id":"https://openalex.org/C16317505","wikidata":"https://www.wikidata.org/wiki/Q132013","display_name":"High-\u03ba dielectric","level":3,"score":0.6629464626312256},{"id":"https://openalex.org/C52780932","wikidata":"https://www.wikidata.org/wiki/Q994752","display_name":"Equivalent oxide thickness","level":5,"score":0.5868916511535645},{"id":"https://openalex.org/C56052488","wikidata":"https://www.wikidata.org/wiki/Q103382","display_name":"Amorphous solid","level":2,"score":0.5629915595054626},{"id":"https://openalex.org/C49040817","wikidata":"https://www.wikidata.org/wiki/Q193091","display_name":"Optoelectronics","level":1,"score":0.4956866502761841},{"id":"https://openalex.org/C166972891","wikidata":"https://www.wikidata.org/wiki/Q5527011","display_name":"Gate dielectric","level":4,"score":0.44594210386276245},{"id":"https://openalex.org/C108225325","wikidata":"https://www.wikidata.org/wiki/Q11456","display_name":"Semiconductor","level":2,"score":0.43556058406829834},{"id":"https://openalex.org/C123299182","wikidata":"https://www.wikidata.org/wiki/Q190837","display_name":"Hysteresis","level":2,"score":0.43553340435028076},{"id":"https://openalex.org/C2361726","wikidata":"https://www.wikidata.org/wiki/Q5527031","display_name":"Gate oxide","level":4,"score":0.25436246395111084},{"id":"https://openalex.org/C119599485","wikidata":"https://www.wikidata.org/wiki/Q43035","display_name":"Electrical engineering","level":1,"score":0.2393377125263214},{"id":"https://openalex.org/C165801399","wikidata":"https://www.wikidata.org/wiki/Q25428","display_name":"Voltage","level":2,"score":0.2367003858089447},{"id":"https://openalex.org/C26873012","wikidata":"https://www.wikidata.org/wiki/Q214781","display_name":"Condensed matter physics","level":1,"score":0.2138904631137848},{"id":"https://openalex.org/C185592680","wikidata":"https://www.wikidata.org/wiki/Q2329","display_name":"Chemistry","level":0,"score":0.09154930710792542},{"id":"https://openalex.org/C172385210","wikidata":"https://www.wikidata.org/wiki/Q5339","display_name":"Transistor","level":3,"score":0.0755164623260498},{"id":"https://openalex.org/C8010536","wikidata":"https://www.wikidata.org/wiki/Q160398","display_name":"Crystallography","level":1,"score":0.07071325182914734},{"id":"https://openalex.org/C191897082","wikidata":"https://www.wikidata.org/wiki/Q11467","display_name":"Metallurgy","level":1,"score":0.06796273589134216},{"id":"https://openalex.org/C121332964","wikidata":"https://www.wikidata.org/wiki/Q413","display_name":"Physics","level":0,"score":0.0},{"id":"https://openalex.org/C127413603","wikidata":"https://www.wikidata.org/wiki/Q11023","display_name":"Engineering","level":0,"score":0.0},{"id":"https://openalex.org/C534791751","wikidata":"https://www.wikidata.org/wiki/Q1038","display_name":"Zirconium","level":2,"score":0.0}],"mesh":[],"locations_count":1,"locations":[{"id":"doi:10.7567/1882-0786/aaf62a","doi":"https://doi.org/10.7567/1882-0786/aaf62a","is_oa":true,"landing_page_url":"https://doi.org/10.7567/1882-0786/aaf62a","pdf_url":"https://iopscience.iop.org/article/10.7567/1882-0786/aaf62a/pdf","source":{"id":"https://openalex.org/S54409865","display_name":"Applied Physics Express","issn_l":"1882-0778","issn":["1882-0778","1882-0786"],"is_oa":false,"is_in_doaj":true,"is_core":true,"listed_in":["cwts-core","doaj","dongbi-b","jufo-1","norway-1","oarl","poland-70","russia-white-list-1"],"host_organization":"https://openalex.org/P4310311669","host_organization_name":"Institute of Physics","host_organization_lineage":["https://openalex.org/P4310311669"],"host_organization_lineage_names":["Institute of Physics"],"type":"journal"},"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"Applied Physics Express","raw_type":"journal-article"}],"best_oa_location":{"id":"doi:10.7567/1882-0786/aaf62a","doi":"https://doi.org/10.7567/1882-0786/aaf62a","is_oa":true,"landing_page_url":"https://doi.org/10.7567/1882-0786/aaf62a","pdf_url":"https://iopscience.iop.org/article/10.7567/1882-0786/aaf62a/pdf","source":{"id":"https://openalex.org/S54409865","display_name":"Applied Physics Express","issn_l":"1882-0778","issn":["1882-0778","1882-0786"],"is_oa":false,"is_in_doaj":true,"is_core":true,"listed_in":["cwts-core","doaj","dongbi-b","jufo-1","norway-1","oarl","poland-70","russia-white-list-1"],"host_organization":"https://openalex.org/P4310311669","host_organization_name":"Institute of Physics","host_organization_lineage":["https://openalex.org/P4310311669"],"host_organization_lineage_names":["Institute of Physics"],"type":"journal"},"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"Applied Physics Express","raw_type":"journal-article"},"sustainable_development_goals":[],"study_designs":[],"awards":[],"funders":[{"id":"https://openalex.org/F4320320912","display_name":"Ministry of Education, Culture, Sports, Science and Technology","ror":"https://ror.org/048rj2z13"},{"id":"https://openalex.org/F4320323533","display_name":"Hokkaido University","ror":"https://ror.org/02e16g702"},{"id":"https://openalex.org/F4320334904","display_name":"National Institute for Materials Science","ror":"https://ror.org/026v1ze26"},{"id":"https://openalex.org/F4320337326","display_name":"Joining and Welding Research Institute, Osaka University","ror":null}],"has_content":{"pdf":true,"grobid_xml":true},"content_urls":{"pdf":"https://content.openalex.org/works/W2907186160.pdf","grobid_xml":"https://content.openalex.org/works/W2907186160.grobid-xml"},"referenced_works_count":34,"referenced_works":["https://openalex.org/W934025260","https://openalex.org/W1552335207","https://openalex.org/W1947075150","https://openalex.org/W1967270268","https://openalex.org/W1976769231","https://openalex.org/W1979877963","https://openalex.org/W1986565837","https://openalex.org/W1996363517","https://openalex.org/W1996785108","https://openalex.org/W2005721487","https://openalex.org/W2012455562","https://openalex.org/W2028879543","https://openalex.org/W2031532798","https://openalex.org/W2051022102","https://openalex.org/W2059367048","https://openalex.org/W2062970028","https://openalex.org/W2077841655","https://openalex.org/W2079983120","https://openalex.org/W2089610073","https://openalex.org/W2104039915","https://openalex.org/W2534102917","https://openalex.org/W2547782862","https://openalex.org/W2605544777","https://openalex.org/W2726649019","https://openalex.org/W2743817864","https://openalex.org/W2753460681","https://openalex.org/W2763590469","https://openalex.org/W2767482728","https://openalex.org/W2767533546","https://openalex.org/W2770014813","https://openalex.org/W2775353616","https://openalex.org/W2792949622","https://openalex.org/W2799367488","https://openalex.org/W2799978501"],"related_works":["https://openalex.org/W1970200102","https://openalex.org/W1991965248","https://openalex.org/W2979257580","https://openalex.org/W2081920240","https://openalex.org/W2000859519","https://openalex.org/W1970872665","https://openalex.org/W2949028095","https://openalex.org/W2041237107","https://openalex.org/W902347706","https://openalex.org/W15104698"],"abstract_inverted_index":{"Characteristics":[0],"of":[1,34,122],"hafnium":[2],"silicate":[3],"as":[4,85,87],"gate":[5],"dielectric":[6,32],"in":[7],"n-GaN":[8],"capacitors":[9],"were":[10],"investigated.":[11],"The":[12,40],"Hf":[13,20,41,48],"0.57":[14,42],"Si":[15,22,43,50],"0.43":[16,44],"O":[17,24,45,52],"x":[18,25,46,53],",":[19],"0.64":[21,49],"0.36":[23,51],"and":[26,37,47,75,108],"HfO":[27,125],"2":[28,126],"films":[29],"exhibited":[30],"high":[31,110],"constants":[33],"15.4,":[35],"15.9,":[36],"17.6,":[38],"respectively.":[39],"films,":[54],"which":[55],"had":[56],"an":[57],"amorphous":[58],"structure,":[59],"showed":[60],"superior":[61],"properties,":[62],"including":[63],"a":[64,76,88,109,123],"minimal":[65],"flatband":[66],"voltage":[67],"(":[68],"V":[69,78],"fb":[70,79],")":[71,118],"hysteresis":[72],"(\u226470":[73],"mV)":[74],"small":[77],"shift":[80],"(\u2264":[81],"\u2212":[82],"0.45":[83],"V),":[84],"well":[86],"low":[89],"interface":[90],"state":[91],"density":[92],"(~":[93],"4":[94],"\u00d7":[95],"10":[96],"11":[97],"cm":[98,116],"\u22122":[99],"eV":[100,104],"\u22121":[101,117],"at":[102],"\u22120.4":[103],"from":[105],"conduction":[106],"band),":[107],"breakdown":[111],"electric":[112],"field":[113],"(\u22658.6":[114],"MV":[115],"compared":[119],"to":[120],"those":[121],"polycrystalline":[124],"film.":[127]},"counts_by_year":[{"year":2026,"cited_by_count":6},{"year":2025,"cited_by_count":2},{"year":2024,"cited_by_count":7},{"year":2023,"cited_by_count":9},{"year":2022,"cited_by_count":3},{"year":2021,"cited_by_count":6},{"year":2020,"cited_by_count":6},{"year":2019,"cited_by_count":2}],"updated_date":"2026-11-10T11:39:43.021295","created_date":"2019-01-11T00:00:00"}