{"id":"https://openalex.org/W2906835087","doi":"https://doi.org/10.1063/1.5054327","title":"Coefficients of thermal expansion of single crystalline \u03b2-Ga2O3 and in-plane thermal strain calculations of various materials combinations with \u03b2-Ga2O3","display_name":"Coefficients of thermal expansion of single crystalline \u03b2-Ga2O3 and in-plane thermal strain calculations of various materials combinations with \u03b2-Ga2O3","publication_year":2018,"publication_date":"2018-12-28","ids":{"openalex":"https://openalex.org/W2906835087","doi":"https://doi.org/10.1063/1.5054327","mag":"2906835087"},"language":"en","primary_location":{"id":"doi:10.1063/1.5054327","doi":"https://doi.org/10.1063/1.5054327","is_oa":true,"landing_page_url":"https://doi.org/10.1063/1.5054327","pdf_url":null,"source":{"id":"https://openalex.org/S150722692","display_name":"APL Materials","issn_l":"2166-532X","issn":["2166-532X"],"is_oa":true,"is_in_doaj":true,"is_core":true,"listed_in":["cwts-core","doaj","dongbi-b","jufo-2","norway-1","oarl","poland-100","russia-white-list-1"],"host_organization":"https://openalex.org/P4310320257","host_organization_name":"American Institute of Physics","host_organization_lineage":["https://openalex.org/P4310320257"],"host_organization_lineage_names":["American Institute of Physics"],"type":"journal"},"license":"cc-by","license_id":"https://openalex.org/licenses/cc-by","version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"APL Materials","raw_type":"journal-article"},"parent_works":[],"lineage":["https://openalex.org/W2906835087"],"child_works_count":0,"type":"article","is_traditional":true,"indexed_in":["crossref","doaj"],"open_access":{"is_oa":true,"oa_status":"gold","oa_url":"https://doi.org/10.1063/1.5054327","any_repository_has_fulltext":true},"authorships":[{"author_position":"first","author":{"id":"https://openalex.org/A5078953103","display_name":"Michael Evan Liao","orcid":"https://orcid.org/0000-0003-3103-9357","observed_orcids":["https://orcid.org/0000-0003-3103-9357"]},"institutions":[{"id":"https://openalex.org/I161318765","display_name":"University of California, Los Angeles","ror":"https://ror.org/046rm7j60","country_code":"US","type":"education","lineage":["https://openalex.org/I161318765"]}],"countries":["US"],"is_corresponding":false,"raw_author_name":"Michael E. Liao","raw_affiliation_strings":["University of California, Los Angeles 1 , Los Angeles, California 90095, USA"],"raw_orcid":"https://orcid.org/0000-0003-3103-9357","affiliations":[{"raw_affiliation_string":"University of California, Los Angeles 1 , Los Angeles, California 90095, USA","institution_ids":["https://openalex.org/I161318765"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5100323092","display_name":"Chao Li","orcid":"https://orcid.org/0000-0001-5984-2622","observed_orcids":["https://orcid.org/0000-0001-5984-2622"]},"institutions":[{"id":"https://openalex.org/I161318765","display_name":"University of California, Los Angeles","ror":"https://ror.org/046rm7j60","country_code":"US","type":"education","lineage":["https://openalex.org/I161318765"]}],"countries":["US"],"is_corresponding":false,"raw_author_name":"Chao Li","raw_affiliation_strings":["University of California, Los Angeles 1 , Los Angeles, California 90095, USA"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"University of California, Los Angeles 1 , Los Angeles, California 90095, USA","institution_ids":["https://openalex.org/I161318765"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5042219159","display_name":"Hsuan Ming Yu","orcid":"https://orcid.org/0000-0002-1227-942X","observed_orcids":["https://orcid.org/0000-0002-1227-942X"]},"institutions":[{"id":"https://openalex.org/I161318765","display_name":"University of California, Los Angeles","ror":"https://ror.org/046rm7j60","country_code":"US","type":"education","lineage":["https://openalex.org/I161318765"]}],"countries":["US"],"is_corresponding":false,"raw_author_name":"Hsuan Ming Yu","raw_affiliation_strings":["University of California, Los Angeles 1 , Los Angeles, California 90095, USA"],"raw_orcid":"https://orcid.org/0000-0002-1227-942X","affiliations":[{"raw_affiliation_string":"University of California, Los Angeles 1 , Los Angeles, California 90095, USA","institution_ids":["https://openalex.org/I161318765"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5020531257","display_name":"Eva S. Rosker","orcid":"https://orcid.org/0000-0003-0990-4412","observed_orcids":["https://orcid.org/0000-0003-0990-4412"]},"institutions":[{"id":"https://openalex.org/I161318765","display_name":"University of California, Los Angeles","ror":"https://ror.org/046rm7j60","country_code":"US","type":"education","lineage":["https://openalex.org/I161318765"]}],"countries":["US"],"is_corresponding":false,"raw_author_name":"Eva Rosker","raw_affiliation_strings":["University of California, Los Angeles 1 , Los Angeles, California 90095, USA"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"University of California, Los Angeles 1 , Los Angeles, California 90095, USA","institution_ids":["https://openalex.org/I161318765"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5018190506","display_name":"Marko Jak Tadjer","orcid":"https://orcid.org/0000-0002-2388-2937","observed_orcids":["https://orcid.org/0000-0002-2388-2937"]},"institutions":[{"id":"https://openalex.org/I161318765","display_name":"University of California, Los Angeles","ror":"https://ror.org/046rm7j60","country_code":"US","type":"education","lineage":["https://openalex.org/I161318765"]}],"countries":["US"],"is_corresponding":false,"raw_author_name":"Marko J. Tadjer","raw_affiliation_strings":["University of California, Los Angeles 1 , Los Angeles, California 90095, USA"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"University of California, Los Angeles 1 , Los Angeles, California 90095, USA","institution_ids":["https://openalex.org/I161318765"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5000745448","display_name":"Karl D. Hobart","orcid":"https://orcid.org/0000-0002-3840-8357","observed_orcids":["https://orcid.org/0000-0002-3840-8357"]},"institutions":[{"id":"https://openalex.org/I1288214837","display_name":"United States Naval Research Laboratory","ror":"https://ror.org/04d23a975","country_code":"US","type":"facility","lineage":["https://openalex.org/I1288214837","https://openalex.org/I1330347796","https://openalex.org/I175003984","https://openalex.org/I3130687028"]}],"countries":["US"],"is_corresponding":false,"raw_author_name":"Karl D. Hobart","raw_affiliation_strings":["U.S. Naval Research Laboratory 2 , Washington, District of Columbia 20375, USA"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"U.S. Naval Research Laboratory 2 , Washington, District of Columbia 20375, USA","institution_ids":["https://openalex.org/I1288214837"]}]},{"author_position":"last","author":{"id":"https://openalex.org/A5032232422","display_name":"Mark S. Goorsky","orcid":"https://orcid.org/0000-0002-3416-6688","observed_orcids":["https://orcid.org/0000-0002-3416-6688"]},"institutions":[{"id":"https://openalex.org/I161318765","display_name":"University of California, Los Angeles","ror":"https://ror.org/046rm7j60","country_code":"US","type":"education","lineage":["https://openalex.org/I161318765"]}],"countries":["US"],"is_corresponding":false,"raw_author_name":"Mark S. Goorsky","raw_affiliation_strings":["University of California, Los Angeles 1 , Los Angeles, California 90095, USA"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"University of California, Los Angeles 1 , Los Angeles, California 90095, USA","institution_ids":["https://openalex.org/I161318765"]}]}],"institutions":[],"countries_distinct_count":1,"institutions_distinct_count":2,"corresponding_author_ids":[],"corresponding_institution_ids":[],"apc_list":{"value":2200,"currency":"USD","value_usd":2200},"apc_paid":{"value":2200,"currency":"USD","value_usd":2200},"fwci":0.8489,"has_fulltext":false,"cited_by_count":42,"citation_normalized_percentile":{"value":0.66610455,"is_in_top_1_percent":false,"is_in_top_10_percent":false},"cited_by_percentile_year":{"min":88,"max":99},"biblio":{"volume":"7","issue":"2","first_page":null,"last_page":null},"is_retracted":false,"is_paratext":false,"is_xpac":false,"primary_topic":{"id":"https://openalex.org/T12529","display_name":"Ga2O3 and related materials","score":0.9990000128746033,"subfield":{"id":"https://openalex.org/subfields/2504","display_name":"Electronic, Optical and Magnetic Materials"},"field":{"id":"https://openalex.org/fields/25","display_name":"Materials Science"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},"topics":[{"id":"https://openalex.org/T12529","display_name":"Ga2O3 and related materials","score":0.9990000128746033,"subfield":{"id":"https://openalex.org/subfields/2504","display_name":"Electronic, Optical and Magnetic Materials"},"field":{"id":"https://openalex.org/fields/25","display_name":"Materials Science"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T12875","display_name":"Thermal Expansion and Ionic Conductivity","score":0.0006000000284984708,"subfield":{"id":"https://openalex.org/subfields/2505","display_name":"Materials Chemistry"},"field":{"id":"https://openalex.org/fields/25","display_name":"Materials Science"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T10361","display_name":"Silicon Carbide Semiconductor Technologies","score":0.0,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}}],"keywords":[{"id":"https://openalex.org/keywords/beta-ga2o3","display_name":"\u03b2-Ga2O3","score":0.9919999837875366},{"id":"https://openalex.org/keywords/ga2o3","display_name":"gallium oxide","score":0.847000002861023},{"id":"https://openalex.org/keywords/thermal-expansion","display_name":"thermal expansion","score":0.8140000104904175},{"id":"https://openalex.org/keywords/epitaxial-growth","display_name":"epitaxial growth","score":0.7549999952316284},{"id":"https://openalex.org/keywords/wafer-bonding","display_name":"wafer bonding","score":0.9869999885559082},{"id":"https://openalex.org/keywords/si","display_name":"Si","score":0.414000004529953},{"id":"https://openalex.org/keywords/indium-phosphide","display_name":"indium phosphide","score":0.9980000257492065},{"id":"https://openalex.org/keywords/3c-sic","display_name":"3C-SiC","score":0.9750000238418579},{"id":"https://openalex.org/keywords/6h-sic","display_name":"6H-SiC","score":1.0},{"id":"https://openalex.org/keywords/gan","display_name":"GaN","score":0.996999979019165},{"id":"https://openalex.org/keywords/sapphire","display_name":"sapphire","score":0.8999999761581421},{"id":"https://openalex.org/keywords/anisotropic-thermal-expansion","display_name":"anisotropic thermal expansion","score":0.6039999723434448}],"concepts":[{"id":"https://openalex.org/C47463417","wikidata":"https://www.wikidata.org/wiki/Q6583695","display_name":"Thermal expansion","level":2,"score":0.8915959596633911},{"id":"https://openalex.org/C192562407","wikidata":"https://www.wikidata.org/wiki/Q228736","display_name":"Materials science","level":0,"score":0.8801674246788025},{"id":"https://openalex.org/C61276311","wikidata":"https://www.wikidata.org/wiki/Q624543","display_name":"Monoclinic crystal system","level":3,"score":0.7355980277061462},{"id":"https://openalex.org/C110738630","wikidata":"https://www.wikidata.org/wiki/Q1135540","display_name":"Epitaxy","level":3,"score":0.6180962920188904},{"id":"https://openalex.org/C2780064504","wikidata":"https://www.wikidata.org/wiki/Q127583","display_name":"Sapphire","level":3,"score":0.5809808969497681},{"id":"https://openalex.org/C207114421","wikidata":"https://www.wikidata.org/wiki/Q133900","display_name":"Diffraction","level":2,"score":0.5071094036102295},{"id":"https://openalex.org/C50515024","wikidata":"https://www.wikidata.org/wiki/Q826582","display_name":"X-ray crystallography","level":3,"score":0.5055286884307861},{"id":"https://openalex.org/C2777289219","wikidata":"https://www.wikidata.org/wiki/Q7632154","display_name":"Substrate (aquarium)","level":2,"score":0.5029527544975281},{"id":"https://openalex.org/C160671074","wikidata":"https://www.wikidata.org/wiki/Q267131","display_name":"Wafer","level":2,"score":0.4991755485534668},{"id":"https://openalex.org/C113196181","wikidata":"https://www.wikidata.org/wiki/Q485223","display_name":"Analytical Chemistry (journal)","level":2,"score":0.44651639461517334},{"id":"https://openalex.org/C8010536","wikidata":"https://www.wikidata.org/wiki/Q160398","display_name":"Crystallography","level":1,"score":0.43343034386634827},{"id":"https://openalex.org/C159985019","wikidata":"https://www.wikidata.org/wiki/Q181790","display_name":"Composite material","level":1,"score":0.34710755944252014},{"id":"https://openalex.org/C115624301","wikidata":"https://www.wikidata.org/wiki/Q895901","display_name":"Crystal structure","level":2,"score":0.2737431228160858},{"id":"https://openalex.org/C120665830","wikidata":"https://www.wikidata.org/wiki/Q14620","display_name":"Optics","level":1,"score":0.20682644844055176},{"id":"https://openalex.org/C49040817","wikidata":"https://www.wikidata.org/wiki/Q193091","display_name":"Optoelectronics","level":1,"score":0.12588131427764893},{"id":"https://openalex.org/C121332964","wikidata":"https://www.wikidata.org/wiki/Q413","display_name":"Physics","level":0,"score":0.0},{"id":"https://openalex.org/C520434653","wikidata":"https://www.wikidata.org/wiki/Q38867","display_name":"Laser","level":2,"score":0.0},{"id":"https://openalex.org/C185592680","wikidata":"https://www.wikidata.org/wiki/Q2329","display_name":"Chemistry","level":0,"score":0.0},{"id":"https://openalex.org/C127313418","wikidata":"https://www.wikidata.org/wiki/Q1069","display_name":"Geology","level":0,"score":0.0},{"id":"https://openalex.org/C111368507","wikidata":"https://www.wikidata.org/wiki/Q43518","display_name":"Oceanography","level":1,"score":0.0},{"id":"https://openalex.org/C43617362","wikidata":"https://www.wikidata.org/wiki/Q170050","display_name":"Chromatography","level":1,"score":0.0},{"id":"https://openalex.org/C2779227376","wikidata":"https://www.wikidata.org/wiki/Q6505497","display_name":"Layer (electronics)","level":2,"score":0.0}],"mesh":[],"locations_count":2,"locations":[{"id":"doi:10.1063/1.5054327","doi":"https://doi.org/10.1063/1.5054327","is_oa":true,"landing_page_url":"https://doi.org/10.1063/1.5054327","pdf_url":null,"source":{"id":"https://openalex.org/S150722692","display_name":"APL Materials","issn_l":"2166-532X","issn":["2166-532X"],"is_oa":true,"is_in_doaj":true,"is_core":true,"listed_in":["cwts-core","doaj","dongbi-b","jufo-2","norway-1","oarl","poland-100","russia-white-list-1"],"host_organization":"https://openalex.org/P4310320257","host_organization_name":"American Institute of Physics","host_organization_lineage":["https://openalex.org/P4310320257"],"host_organization_lineage_names":["American Institute of Physics"],"type":"journal"},"license":"cc-by","license_id":"https://openalex.org/licenses/cc-by","version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"APL Materials","raw_type":"journal-article"},{"id":"pmh:oai:doaj.org/article:11c14384342c421b901e9b883f6133e0","doi":null,"is_oa":true,"landing_page_url":"https://doaj.org/article/11c14384342c421b901e9b883f6133e0","pdf_url":null,"source":{"id":"https://openalex.org/S4306401280","display_name":"DOAJ (DOAJ: Directory of Open Access Journals)","issn_l":null,"issn":null,"is_oa":false,"is_in_doaj":false,"is_core":false,"listed_in":[],"host_organization":null,"host_organization_name":null,"host_organization_lineage":[],"host_organization_lineage_names":[],"type":"repository"},"license":"cc-by-sa","license_id":"https://openalex.org/licenses/cc-by-sa","version":"submittedVersion","is_accepted":false,"is_published":false,"raw_source_name":"APL Materials, Vol 7, Iss 2, Pp 022517-022517-6 (2019)","raw_type":"article"}],"best_oa_location":{"id":"doi:10.1063/1.5054327","doi":"https://doi.org/10.1063/1.5054327","is_oa":true,"landing_page_url":"https://doi.org/10.1063/1.5054327","pdf_url":null,"source":{"id":"https://openalex.org/S150722692","display_name":"APL Materials","issn_l":"2166-532X","issn":["2166-532X"],"is_oa":true,"is_in_doaj":true,"is_core":true,"listed_in":["cwts-core","doaj","dongbi-b","jufo-2","norway-1","oarl","poland-100","russia-white-list-1"],"host_organization":"https://openalex.org/P4310320257","host_organization_name":"American Institute of Physics","host_organization_lineage":["https://openalex.org/P4310320257"],"host_organization_lineage_names":["American Institute of Physics"],"type":"journal"},"license":"cc-by","license_id":"https://openalex.org/licenses/cc-by","version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"APL Materials","raw_type":"journal-article"},"sustainable_development_goals":[],"study_designs":[],"awards":[],"funders":[],"has_content":{"grobid_xml":false,"pdf":false},"content_urls":null,"referenced_works_count":44,"referenced_works":["https://openalex.org/W872883881","https://openalex.org/W1560224562","https://openalex.org/W1613529105","https://openalex.org/W1840781947","https://openalex.org/W1940244202","https://openalex.org/W1964767822","https://openalex.org/W1966608527","https://openalex.org/W1985495603","https://openalex.org/W1992631092","https://openalex.org/W2002069309","https://openalex.org/W2002495885","https://openalex.org/W2003989429","https://openalex.org/W2007780712","https://openalex.org/W2021684974","https://openalex.org/W2033669547","https://openalex.org/W2035817882","https://openalex.org/W2036134495","https://openalex.org/W2036565113","https://openalex.org/W2036595452","https://openalex.org/W2043388206","https://openalex.org/W2047681215","https://openalex.org/W2053618502","https://openalex.org/W2058958546","https://openalex.org/W2070946896","https://openalex.org/W2095638168","https://openalex.org/W2113017370","https://openalex.org/W2126204863","https://openalex.org/W2155581057","https://openalex.org/W2170913904","https://openalex.org/W2223042081","https://openalex.org/W2259626724","https://openalex.org/W2274777768","https://openalex.org/W2358043312","https://openalex.org/W2509570769","https://openalex.org/W2576232108","https://openalex.org/W2708937098","https://openalex.org/W2752594618","https://openalex.org/W2755337172","https://openalex.org/W2756279132","https://openalex.org/W2775776374","https://openalex.org/W2783668429","https://openalex.org/W2799696700","https://openalex.org/W3147001040","https://openalex.org/W4285719527"],"related_works":["https://openalex.org/W2899456543","https://openalex.org/W2223042081","https://openalex.org/W2081449874","https://openalex.org/W4413299436","https://openalex.org/W2942381908","https://openalex.org/W7134174118","https://openalex.org/W2979497525","https://openalex.org/W2964106777","https://openalex.org/W4392926645"],"abstract_inverted_index":{"The":[0,31],"coefficients":[1],"of":[2,6,59],"thermal":[3],"expansion":[4],"(CTEs)":[5],"single":[7,27],"crystalline,":[8],"monoclinic":[9],"\u03b2-Ga2O3":[10,29,124],"were":[11,99],"determined":[12,72],"by":[13],"employing":[14],"high-resolution":[15],"X-ray":[16],"diffraction":[17],"measurements.":[18,115],"This":[19],"work":[20],"reports":[21],"the":[22,35,57,60,66,88],"CTE":[23,32,58,81],"measurements":[24,98],"on":[25],"a":[26,102],"crystalline":[28],"substrate.":[30],"values":[33,82],"along":[34],"\u201ca,\u201d":[36],"\u201cb,\u201d":[37],"and":[38,50,56,68,94,107,132,142],"\u201cc\u201d":[39,69],"axes":[40],"are":[41,85,125],"3.77":[42],"\u00d7":[43,47,52,76],"10\u22126":[44,48,53],"\u00b0C\u22121,":[45,49,54],"7.80":[46],"6.34":[51],"respectively,":[55],"angle":[61,64],"\u03b2":[62],"(the":[63],"between":[65,91],"\u201ca\u201d":[67],"axes)":[70],"is":[71],"to":[73,129],"be":[74],"1.31":[75],"10\u22124":[77],"\u00b0":[78],"K\u22121.":[79],"All":[80,97],"reported":[83],"here":[84],"linear":[86],"under":[87],"temperature":[89,93],"regime":[90],"room":[92],"1000":[95],"\u00b0C.":[96],"performed":[100],"in":[101],"controlled":[103],"nitrogen":[104],"gas":[105],"environment,":[106],"no":[108],"surface":[109],"degradation":[110],"was":[111],"observed":[112],"after":[113],"these":[114],"Thermal":[116],"strain":[117],"calculations":[118],"with":[119],"different":[120],"material":[121],"combinations":[122],"involving":[123],"also":[126],"presented":[127],"relevant":[128],"both":[130],"epitaxial":[131],"wafer":[133],"bonding":[134],"applications":[135],"for":[136],"Si,":[137],"InP,":[138],"3C\u2013SiC,":[139],"6H\u2013SiC,":[140],"GaN,":[141],"sapphire.":[143]},"counts_by_year":[{"year":2026,"cited_by_count":7},{"year":2025,"cited_by_count":5},{"year":2024,"cited_by_count":8},{"year":2023,"cited_by_count":6},{"year":2022,"cited_by_count":5},{"year":2021,"cited_by_count":7},{"year":2020,"cited_by_count":3},{"year":2019,"cited_by_count":1}],"updated_date":"2026-11-14T11:04:58.165337","created_date":"2019-01-11T00:00:00"}