{"id":"https://openalex.org/W2903777451","doi":"https://doi.org/10.1109/tcpmt.2018.2886810","title":"Novel Solution for High-Temperature Dielectric Application to Encapsulate High-Voltage Power Semiconductor Devices","display_name":"Novel Solution for High-Temperature Dielectric Application to Encapsulate High-Voltage Power Semiconductor Devices","publication_year":2018,"publication_date":"2018-12-14","ids":{"openalex":"https://openalex.org/W2903777451","doi":"https://doi.org/10.1109/tcpmt.2018.2886810","mag":"2903777451"},"language":"en","primary_location":{"id":"doi:10.1109/tcpmt.2018.2886810","doi":"https://doi.org/10.1109/tcpmt.2018.2886810","is_oa":false,"landing_page_url":"https://doi.org/10.1109/tcpmt.2018.2886810","pdf_url":null,"source":{"id":"https://openalex.org/S50222406","display_name":"IEEE Transactions on Components Packaging and Manufacturing Technology","issn_l":"2156-3950","issn":["2156-3950","2156-3985"],"is_oa":false,"is_in_doaj":false,"is_core":true,"listed_in":["anvur-scientific","cwts-core","dongbi-c","jufo-1","norway-1","poland-70","russia-white-list-1"],"host_organization":"https://openalex.org/P4310319808","host_organization_name":"Institute of Electrical and Electronics Engineers","host_organization_lineage":["https://openalex.org/P4310319808"],"host_organization_lineage_names":["Institute of Electrical and Electronics Engineers"],"type":"journal"},"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"IEEE Transactions on Components, Packaging and Manufacturing Technology","raw_type":"journal-article"},"volume":null,"type":"article","is_traditional":true,"indexed_in":["crossref"],"open_access":{"is_oa":true,"oa_status":"green","oa_url":"https://dr.ntu.edu.sg/bitstream/10356/144950/2/Novel%20solution%20for%20high%20temprature%20dielectric%20application%20to%20encapsulate%20high%20voltage%20power%20semiconductor%20devices.pdf","any_repository_has_fulltext":true},"authorships":[{"author_position":"first","author":{"id":"https://openalex.org/A5085396018","display_name":"Vivek Chidambaram","orcid":"https://orcid.org/0000-0002-5014-1843","observed_orcids":["https://orcid.org/0000-0002-5014-1843"]},"institutions":[{"id":"https://openalex.org/I115228651","display_name":"Agency for Science, Technology and Research","ror":"https://ror.org/036wvzt09","country_code":"SG","type":"government","lineage":["https://openalex.org/I115228651"]}],"countries":["SG"],"is_corresponding":false,"raw_author_name":"Vivek Chidambaram","raw_affiliation_strings":["Agency for Science Technology and Research, Singapore, SG"],"raw_orcid":"https://orcid.org/0000-0002-5014-1843","affiliations":[{"raw_affiliation_string":"Agency for Science Technology and Research, Singapore, SG","institution_ids":["https://openalex.org/I115228651"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5100763325","display_name":"Tao Jing","orcid":"https://orcid.org/0009-0000-9955-676X","observed_orcids":["https://orcid.org/0009-0000-9955-676X","https://orcid.org/0000-0002-6326-9256"]},"institutions":[{"id":"https://openalex.org/I115228651","display_name":"Agency for Science, Technology and Research","ror":"https://ror.org/036wvzt09","country_code":"SG","type":"government","lineage":["https://openalex.org/I115228651"]}],"countries":["SG"],"is_corresponding":false,"raw_author_name":"T. Jing","raw_affiliation_strings":["Agency for Science Technology and Research, Singapore, SG"],"raw_orcid":"https://orcid.org/0000-0002-6326-9256","affiliations":[{"raw_affiliation_string":"Agency for Science Technology and Research, Singapore, SG","institution_ids":["https://openalex.org/I115228651"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5107555978","display_name":"Ren Bin Yang","orcid":null,"observed_orcids":[]},"institutions":[{"id":"https://openalex.org/I115228651","display_name":"Agency for Science, Technology and Research","ror":"https://ror.org/036wvzt09","country_code":"SG","type":"government","lineage":["https://openalex.org/I115228651"]}],"countries":["SG"],"is_corresponding":false,"raw_author_name":"Ren Bin Yang","raw_affiliation_strings":["Agency for Science Technology and Research, Singapore, SG","Agency for Science, Technology and Research, Institute of Materials Research, Singapore"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Agency for Science Technology and Research, Singapore, SG","institution_ids":["https://openalex.org/I115228651"]},{"raw_affiliation_string":"Agency for Science, Technology and Research, Institute of Materials Research, Singapore","institution_ids":["https://openalex.org/I115228651"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5077771726","display_name":"Maziar Shakerzadeh","orcid":"https://orcid.org/0000-0002-7294-6554","observed_orcids":["https://orcid.org/0000-0002-7294-6554"]},"institutions":[{"id":"https://openalex.org/I172675005","display_name":"Nanyang Technological University","ror":"https://ror.org/02e7b5302","country_code":"SG","type":"education","lineage":["https://openalex.org/I172675005"]},{"id":"https://openalex.org/I4405277998","display_name":"Temasek Laboratories@NTU","ror":"https://ror.org/04k7mjn74","country_code":"SG","type":"facility","lineage":["https://openalex.org/I4405277998"]}],"countries":["SG"],"is_corresponding":false,"raw_author_name":"Maziar Shakerzadeh","raw_affiliation_strings":["Nanyang Technological University, Singapore, Singapore, SG","[Temasek Laboratories NTU, Nanyang Technological University, Singapore]"],"raw_orcid":"https://orcid.org/0000-0002-7294-6554","affiliations":[{"raw_affiliation_string":"Nanyang Technological University, Singapore, Singapore, SG","institution_ids":["https://openalex.org/I172675005"]},{"raw_affiliation_string":"[Temasek Laboratories NTU, Nanyang Technological University, Singapore]","institution_ids":["https://openalex.org/I172675005","https://openalex.org/I4405277998"]}]},{"author_position":"last","author":{"id":"https://openalex.org/A5020053830","display_name":"Lim Kuan Hoong","orcid":null,"observed_orcids":[]},"institutions":[{"id":"https://openalex.org/I115228651","display_name":"Agency for Science, Technology and Research","ror":"https://ror.org/036wvzt09","country_code":"SG","type":"government","lineage":["https://openalex.org/I115228651"]}],"countries":["SG"],"is_corresponding":false,"raw_author_name":"Lim Kuan Hoong","raw_affiliation_strings":["Agency for Science Technology and Research, Singapore, SG"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Agency for Science Technology and Research, Singapore, SG","institution_ids":["https://openalex.org/I115228651"]}]}],"institutions":[],"countries_distinct_count":1,"institutions_distinct_count":3,"corresponding_author_ids":[],"corresponding_institution_ids":[],"apc_list":{"value":2645,"currency":"USD","value_usd":2645},"apc_paid":null,"fwci":0.1914,"has_fulltext":true,"cited_by_count":10,"citation_normalized_percentile":{"value":0.46241837,"is_in_top_1_percent":false,"is_in_top_10_percent":false},"cited_by_percentile_year":{"min":87,"max":96},"biblio":{"volume":"9","issue":"1","first_page":"3","last_page":"9"},"is_retracted":false,"is_paratext":false,"is_xpac":false,"primary_topic":{"id":"https://openalex.org/T10361","display_name":"Silicon Carbide Semiconductor Technologies","score":0.7240999937057495,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},"topics":[{"id":"https://openalex.org/T10361","display_name":"Silicon Carbide Semiconductor Technologies","score":0.7240999937057495,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T10460","display_name":"Electronic Packaging and Soldering Technologies","score":0.13760000467300415,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T10511","display_name":"High voltage insulation and dielectric phenomena","score":0.08579999953508377,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}}],"keywords":[{"id":"https://openalex.org/keywords/high-voltage-power-devices","display_name":"high-voltage power devices","score":0.7670000195503235},{"id":"https://openalex.org/keywords/cyanate-ester-resin","display_name":"cyanate ester resin","score":0.8610000014305115},{"id":"https://openalex.org/keywords/dielectric-breakdown","display_name":"dielectric breakdown","score":0.6840000152587891},{"id":"https://openalex.org/keywords/leakage-current","display_name":"leakage current","score":0.7269999980926514},{"id":"https://openalex.org/keywords/aluminum-oxide-thin-films","display_name":"Al2O3 thin films","score":0.7110000252723694},{"id":"https://openalex.org/keywords/atomic-layer-deposition","display_name":"atomic layer deposition","score":0.9750000238418579},{"id":"https://openalex.org/keywords/tetrahedral-amorphous-carbon","display_name":"tetrahedral amorphous carbon","score":0.9760000109672546},{"id":"https://openalex.org/keywords/filtered-cathodic-arc-deposition","display_name":"filtered cathodic vacuum arc deposition","score":0.8799999952316284},{"id":"https://openalex.org/keywords/conformal-coating","display_name":"conformal coating","score":0.9760000109672546},{"id":"https://openalex.org/keywords/silica-filler","display_name":"silica filler","score":0.550000011920929},{"id":"https://openalex.org/keywords/thermomechanical-stress","display_name":"thermo-mechanical stress","score":0.531000018119812}],"concepts":[{"id":"https://openalex.org/C192562407","wikidata":"https://www.wikidata.org/wiki/Q228736","display_name":"Materials science","level":0,"score":0.8747199177742004},{"id":"https://openalex.org/C2777421745","wikidata":"https://www.wikidata.org/wiki/Q5160245","display_name":"Conformal coating","level":3,"score":0.7311105132102966},{"id":"https://openalex.org/C133386390","wikidata":"https://www.wikidata.org/wiki/Q184996","display_name":"Dielectric","level":2,"score":0.694038450717926},{"id":"https://openalex.org/C159985019","wikidata":"https://www.wikidata.org/wiki/Q181790","display_name":"Composite material","level":1,"score":0.5770529508590698},{"id":"https://openalex.org/C70401718","wikidata":"https://www.wikidata.org/wiki/Q343241","display_name":"Dielectric strength","level":3,"score":0.5577766299247742},{"id":"https://openalex.org/C69544855","wikidata":"https://www.wikidata.org/wiki/Q757625","display_name":"Atomic layer deposition","level":3,"score":0.5465048551559448},{"id":"https://openalex.org/C2781448156","wikidata":"https://www.wikidata.org/wiki/Q1570182","display_name":"Coating","level":2,"score":0.531365156173706},{"id":"https://openalex.org/C108225325","wikidata":"https://www.wikidata.org/wiki/Q11456","display_name":"Semiconductor","level":2,"score":0.48774296045303345},{"id":"https://openalex.org/C49040817","wikidata":"https://www.wikidata.org/wiki/Q193091","display_name":"Optoelectronics","level":1,"score":0.4498712420463562},{"id":"https://openalex.org/C2779227376","wikidata":"https://www.wikidata.org/wiki/Q6505497","display_name":"Layer (electronics)","level":2,"score":0.20193198323249817}],"mesh":[],"locations_count":2,"locations":[{"id":"doi:10.1109/tcpmt.2018.2886810","doi":"https://doi.org/10.1109/tcpmt.2018.2886810","is_oa":false,"landing_page_url":"https://doi.org/10.1109/tcpmt.2018.2886810","pdf_url":null,"source":{"id":"https://openalex.org/S50222406","display_name":"IEEE Transactions on Components Packaging and Manufacturing Technology","issn_l":"2156-3950","issn":["2156-3950","2156-3985"],"is_oa":false,"is_in_doaj":false,"is_core":true,"listed_in":["anvur-scientific","cwts-core","dongbi-c","jufo-1","norway-1","poland-70","russia-white-list-1"],"host_organization":"https://openalex.org/P4310319808","host_organization_name":"Institute of Electrical and Electronics Engineers","host_organization_lineage":["https://openalex.org/P4310319808"],"host_organization_lineage_names":["Institute of Electrical and Electronics Engineers"],"type":"journal"},"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"IEEE Transactions on Components, Packaging and Manufacturing Technology","raw_type":"journal-article"},{"id":"pmh:oai:dr.ntu.edu.sg:10356/144950","doi":null,"is_oa":true,"landing_page_url":"https://hdl.handle.net/10356/144950","pdf_url":"https://dr.ntu.edu.sg/bitstream/10356/144950/2/Novel%20solution%20for%20high%20temprature%20dielectric%20application%20to%20encapsulate%20high%20voltage%20power%20semiconductor%20devices.pdf","source":{"id":"https://openalex.org/S4306402609","display_name":"DR-NTU (Nanyang Technological University)","issn_l":null,"issn":null,"is_oa":false,"is_in_doaj":false,"is_core":false,"listed_in":[],"host_organization":"https://openalex.org/I172675005","host_organization_name":"Nanyang Technological University","host_organization_lineage":["https://openalex.org/I172675005"],"host_organization_lineage_names":[],"type":"repository"},"license":null,"license_id":null,"version":"submittedVersion","is_accepted":false,"is_published":false,"raw_source_name":null,"raw_type":"Journal Article"}],"best_oa_location":{"id":"pmh:oai:dr.ntu.edu.sg:10356/144950","doi":null,"is_oa":true,"landing_page_url":"https://hdl.handle.net/10356/144950","pdf_url":"https://dr.ntu.edu.sg/bitstream/10356/144950/2/Novel%20solution%20for%20high%20temprature%20dielectric%20application%20to%20encapsulate%20high%20voltage%20power%20semiconductor%20devices.pdf","source":{"id":"https://openalex.org/S4306402609","display_name":"DR-NTU (Nanyang Technological University)","issn_l":null,"issn":null,"is_oa":false,"is_in_doaj":false,"is_core":false,"listed_in":[],"host_organization":"https://openalex.org/I172675005","host_organization_name":"Nanyang Technological University","host_organization_lineage":["https://openalex.org/I172675005"],"host_organization_lineage_names":[],"type":"repository"},"license":null,"license_id":null,"version":"submittedVersion","is_accepted":false,"is_published":false,"raw_source_name":null,"raw_type":"Journal Article"},"sustainable_development_goals":[],"study_designs":[],"awards":[],"funders":[{"id":"https://openalex.org/F4320320696","display_name":"Agency for Science, Technology and Research","ror":"https://ror.org/036wvzt09"}],"has_content":{"pdf":true,"grobid_xml":true},"content_urls":{"pdf":"https://content.openalex.org/works/W2903777451.pdf","grobid_xml":"https://content.openalex.org/works/W2903777451.grobid-xml"},"referenced_works_count":13,"referenced_works":["https://openalex.org/W1963550018","https://openalex.org/W1968437218","https://openalex.org/W1988133629","https://openalex.org/W1992872057","https://openalex.org/W2005359766","https://openalex.org/W2038829567","https://openalex.org/W2048297245","https://openalex.org/W2074672014","https://openalex.org/W2165549046","https://openalex.org/W2235679284","https://openalex.org/W2321065846","https://openalex.org/W2470357878","https://openalex.org/W2548863465"],"related_works":["https://openalex.org/W4387193175","https://openalex.org/W1572579489","https://openalex.org/W2595909311","https://openalex.org/W2009950170","https://openalex.org/W2057299720","https://openalex.org/W4408235847","https://openalex.org/W4389332579","https://openalex.org/W2321065846","https://openalex.org/W7166092838","https://openalex.org/W7166129945"],"abstract_inverted_index":{"Traditional":[0],"semiconductor":[1,96],"packaging":[2],"techniques":[3,29],"and":[4,39,42,62,79,102,109,127,145,194,202,244,278],"materials":[5,92],"have":[6],"been":[7],"working":[8],"well":[9],"for":[10,89,93,272],"conventional":[11],"Si":[12],"devices,":[13,52],"which":[14,53],"usually":[15],"operate":[16],"at":[17,55],"temperatures":[18,64,172],"up":[19],"to":[20,77,112,171,187],"175":[21],"\u00b0C.":[22],"As":[23],"the":[24,48,81,113,166,176,189,198,204,216,221,225,228,237,241,247,251,255,267],"operating":[25],"temperature":[26,277],"increases,":[27],"these":[28],"exhibit":[30],"failures":[31],"such":[32],"as":[33,57,59,65,67],"bulk":[34],"flows,":[35],"volume":[36],"shrinkage,":[37],"brittleness":[38],"subsequent":[40],"cracking,":[41],"deterioration":[43],"of":[44,165,197,224,240,250,257],"dielectric":[45,75,91,100,117,222],"strength.":[46],"For":[47],"new":[49],"wide-bandgap":[50],"power":[51],"work":[54],"voltages":[56],"high":[58,66,276,279],"1200":[60],"V":[61],"junction":[63],"250":[68],"\u00b0C,":[69],"there":[70],"is":[71,270],"currently":[72],"no":[73],"known":[74],"material":[76,167,243],"encapsulate":[78],"protect":[80],"active":[82],"devices.":[83,115],"This":[84],"paper":[85,122],"summarizes":[86],"novel":[87],"solutions":[88],"high-temperature":[90],"encapsulating":[94],"high-power":[95],"devices":[97],"without":[98,104,203],"any":[99],"breakdown":[101,210,248],"also":[103,245],"introducing":[105],"excessive":[106],"thermal,":[107],"electrical,":[108],"mechanical":[110],"stresses":[111],"encapsulated":[114],"Polymer":[116],"candidates":[118],"investigated":[119],"in":[120,159],"this":[121,160,273],"include":[123,136],"cyanate":[124],"ester-based":[125],"resin":[126,181],"silicone-based":[128,199],"resin.":[129],"In":[130],"addition,":[131],"conformal":[132,205,218],"coating":[133,206,219],"approaches":[134],"that":[135,215],"alumina":[137,229,258],"deposited":[138,150,232,261],"by":[139,151,209,233,262],"atomic":[140],"layer":[141],"deposition":[142],"(ALD)":[143],"technique":[144,156],"tetrahedral":[146],"amorphous":[147],"carbon":[148],"(ta-c)":[149],"filtered":[152],"cathodic":[153],"vacuum":[154],"arc":[155],"were":[157],"evaluated":[158],"paper.":[161],"Dielectric":[162],"strength":[163],"performance":[164,223],"combinations":[168],"with":[169,182,201,266],"respect":[170],"was":[173,185,207,213],"evaluated.":[174],"Among":[175],"polymer":[177],"encapsulants,":[178],"a":[179],"silicone":[180,252,268],"silica":[183],"fillers":[184],"determined":[186,214],"be":[188],"prospective":[190],"candidate.":[191],"Breakdown":[192],"voltage":[193,249],"leakage":[195,238],"current":[196,239],"encapsulant":[200,269],"measured":[208],"tests.":[211],"It":[212],"ta-c":[217],"deteriorates":[220],"encapsulant,":[226],"while":[227],"thin":[230,259],"film":[231,260],"ALD":[234,263],"approach":[235,264],"reduces":[236],"encapsulation":[242],"increases":[246],"encapsulant.":[253],"Thus,":[254],"combination":[256],"along":[265],"recommended":[271],"application,":[274],"involving":[275],"voltage.":[280]},"counts_by_year":[{"year":2026,"cited_by_count":1},{"year":2025,"cited_by_count":2},{"year":2024,"cited_by_count":1},{"year":2023,"cited_by_count":1},{"year":2022,"cited_by_count":3},{"year":2021,"cited_by_count":1},{"year":2019,"cited_by_count":1}],"updated_date":"2026-10-16T09:59:22.235173","created_date":"2018-12-22T00:00:00"}