{"id":"https://openalex.org/W2899857771","doi":"https://doi.org/10.1088/1361-6641/aaee4a","title":"Bandgap bowing in crystalline (ZnO) 1\u2212 x (GaN) x thin films; influence of composition and structural properties","display_name":"Bandgap bowing in crystalline (ZnO) 1\u2212 x (GaN) x thin films; influence of composition and structural properties","publication_year":2018,"publication_date":"2018-11-05","ids":{"openalex":"https://openalex.org/W2899857771","doi":"https://doi.org/10.1088/1361-6641/aaee4a","mag":"2899857771"},"language":"en","primary_location":{"id":"doi:10.1088/1361-6641/aaee4a","doi":"https://doi.org/10.1088/1361-6641/aaee4a","is_oa":false,"landing_page_url":"https://doi.org/10.1088/1361-6641/aaee4a","pdf_url":null,"source":{"id":"https://openalex.org/S106302738","display_name":"Semiconductor Science and Technology","issn_l":"0268-1242","issn":["0268-1242","1361-6641"],"is_oa":false,"is_in_doaj":false,"is_core":true,"listed_in":["cwts-core","dongbi-c","jufo-1","norway-1","poland-70","russia-white-list-2"],"host_organization":"https://openalex.org/P4310320083","host_organization_name":"IOP Publishing","host_organization_lineage":["https://openalex.org/P4310320083","https://openalex.org/P4310311669"],"host_organization_lineage_names":["IOP Publishing","Institute of Physics"],"type":"journal"},"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"Semiconductor Science and Technology","raw_type":"journal-article"},"volume":null,"type":"article","is_traditional":true,"indexed_in":["crossref"],"open_access":{"is_oa":false,"oa_status":"closed","oa_url":null,"any_repository_has_fulltext":false},"authorships":[{"author_position":"first","author":{"id":"https://openalex.org/A5064275194","display_name":"Vegard Skiftestad Olsen","orcid":"https://orcid.org/0000-0002-4194-5786","observed_orcids":["https://orcid.org/0000-0002-4194-5786"]},"institutions":[{"id":"https://openalex.org/I184942183","display_name":"University of Oslo","ror":"https://ror.org/01xtthb56","country_code":"NO","type":"education","lineage":["https://openalex.org/I184942183"]}],"countries":["NO"],"is_corresponding":true,"raw_author_name":"V S Olsen","raw_affiliation_strings":["Department of Physics, Center for Materials Science and Nanotechnology, University of Oslo, PO Box 1048, Blindern, NO-0316 Oslo, Norway"],"raw_orcid":"https://orcid.org/0000-0002-4194-5786","affiliations":[{"raw_affiliation_string":"Department of Physics, Center for Materials Science and Nanotechnology, University of Oslo, PO Box 1048, Blindern, NO-0316 Oslo, Norway","institution_ids":["https://openalex.org/I184942183"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5089977692","display_name":"Calliope Bazioti","orcid":"https://orcid.org/0000-0001-7303-2124","observed_orcids":["https://orcid.org/0000-0001-7303-2124"]},"institutions":[{"id":"https://openalex.org/I184942183","display_name":"University of Oslo","ror":"https://ror.org/01xtthb56","country_code":"NO","type":"education","lineage":["https://openalex.org/I184942183"]}],"countries":["NO"],"is_corresponding":true,"raw_author_name":"C Bazioti","raw_affiliation_strings":["Department of Physics, Center for Materials Science and Nanotechnology, University of Oslo, PO Box 1048, Blindern, NO-0316 Oslo, Norway"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Department of Physics, Center for Materials Science and Nanotechnology, University of Oslo, PO Box 1048, Blindern, NO-0316 Oslo, Norway","institution_ids":["https://openalex.org/I184942183"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5042681955","display_name":"Alexander Yu. Azarov","orcid":"https://orcid.org/0000-0003-0602-9624","observed_orcids":["https://orcid.org/0000-0003-0602-9624"]},"institutions":[{"id":"https://openalex.org/I184942183","display_name":"University of Oslo","ror":"https://ror.org/01xtthb56","country_code":"NO","type":"education","lineage":["https://openalex.org/I184942183"]}],"countries":["NO"],"is_corresponding":true,"raw_author_name":"A Azarov","raw_affiliation_strings":["Department of Physics, Center for Materials Science and Nanotechnology, University of Oslo, PO Box 1048, Blindern, NO-0316 Oslo, Norway"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Department of Physics, Center for Materials Science and Nanotechnology, University of Oslo, PO Box 1048, Blindern, NO-0316 Oslo, Norway","institution_ids":["https://openalex.org/I184942183"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5103178177","display_name":"Bengt Gunnar Svensson","orcid":null,"observed_orcids":[]},"institutions":[{"id":"https://openalex.org/I184942183","display_name":"University of Oslo","ror":"https://ror.org/01xtthb56","country_code":"NO","type":"education","lineage":["https://openalex.org/I184942183"]}],"countries":["NO"],"is_corresponding":true,"raw_author_name":"B G Svensson","raw_affiliation_strings":["Department of Physics, Center for Materials Science and Nanotechnology, University of Oslo, PO Box 1048, Blindern, NO-0316 Oslo, Norway"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Department of Physics, Center for Materials Science and Nanotechnology, University of Oslo, PO Box 1048, Blindern, NO-0316 Oslo, Norway","institution_ids":["https://openalex.org/I184942183"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5012996000","display_name":"Andrej Yu Kuznetsov","orcid":"https://orcid.org/0000-0003-1822-9850","observed_orcids":["https://orcid.org/0000-0003-1822-9850"]},"institutions":[{"id":"https://openalex.org/I184942183","display_name":"University of Oslo","ror":"https://ror.org/01xtthb56","country_code":"NO","type":"education","lineage":["https://openalex.org/I184942183"]}],"countries":["NO"],"is_corresponding":true,"raw_author_name":"A Kuznetsov","raw_affiliation_strings":["Department of Physics, Center for Materials Science and Nanotechnology, University of Oslo, PO Box 1048, Blindern, NO-0316 Oslo, Norway"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Department of Physics, Center for Materials Science and Nanotechnology, University of Oslo, PO Box 1048, Blindern, NO-0316 Oslo, Norway","institution_ids":["https://openalex.org/I184942183"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5068343115","display_name":"\u00d8ystein Prytz","orcid":"https://orcid.org/0000-0001-6679-6492","observed_orcids":["https://orcid.org/0000-0001-6679-6492"]},"institutions":[{"id":"https://openalex.org/I184942183","display_name":"University of Oslo","ror":"https://ror.org/01xtthb56","country_code":"NO","type":"education","lineage":["https://openalex.org/I184942183"]}],"countries":["NO"],"is_corresponding":true,"raw_author_name":"\u00d8 Prytz","raw_affiliation_strings":["Department of Physics, Center for Materials Science and Nanotechnology, University of Oslo, PO Box 1048, Blindern, NO-0316 Oslo, Norway"],"raw_orcid":"https://orcid.org/0000-0001-6679-6492","affiliations":[{"raw_affiliation_string":"Department of Physics, Center for Materials Science and Nanotechnology, University of Oslo, PO Box 1048, Blindern, NO-0316 Oslo, Norway","institution_ids":["https://openalex.org/I184942183"]}]},{"author_position":"last","author":{"id":"https://openalex.org/A5050457499","display_name":"Lasse Vines","orcid":"https://orcid.org/0000-0001-5759-7192","observed_orcids":["https://orcid.org/0000-0001-5759-7192"]},"institutions":[{"id":"https://openalex.org/I184942183","display_name":"University of Oslo","ror":"https://ror.org/01xtthb56","country_code":"NO","type":"education","lineage":["https://openalex.org/I184942183"]}],"countries":["NO"],"is_corresponding":true,"raw_author_name":"L Vines","raw_affiliation_strings":["Department of Physics, Center for Materials Science and Nanotechnology, University of Oslo, PO Box 1048, Blindern, NO-0316 Oslo, Norway"],"raw_orcid":"https://orcid.org/0000-0001-5759-7192","affiliations":[{"raw_affiliation_string":"Department of Physics, Center for Materials Science and Nanotechnology, University of Oslo, PO Box 1048, Blindern, NO-0316 Oslo, Norway","institution_ids":["https://openalex.org/I184942183"]}]}],"institutions":[],"countries_distinct_count":1,"institutions_distinct_count":1,"corresponding_author_ids":["https://openalex.org/A5012996000","https://openalex.org/A5042681955","https://openalex.org/A5050457499","https://openalex.org/A5064275194","https://openalex.org/A5068343115","https://openalex.org/A5089977692","https://openalex.org/A5103178177"],"corresponding_institution_ids":["https://openalex.org/I184942183"],"apc_list":{"value":3325,"currency":"USD","value_usd":3325},"apc_paid":null,"fwci":0.5247,"has_fulltext":false,"cited_by_count":7,"citation_normalized_percentile":{"value":0.57017617,"is_in_top_1_percent":false,"is_in_top_10_percent":false},"cited_by_percentile_year":{"min":88,"max":97},"biblio":{"volume":"34","issue":"1","first_page":"015001","last_page":"015001"},"is_retracted":false,"is_paratext":false,"is_xpac":false,"primary_topic":{"id":"https://openalex.org/T10090","display_name":"ZnO doping and properties","score":0.9541000127792358,"subfield":{"id":"https://openalex.org/subfields/2505","display_name":"Materials Chemistry"},"field":{"id":"https://openalex.org/fields/25","display_name":"Materials Science"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},"topics":[{"id":"https://openalex.org/T10090","display_name":"ZnO doping and properties","score":0.9541000127792358,"subfield":{"id":"https://openalex.org/subfields/2505","display_name":"Materials Chemistry"},"field":{"id":"https://openalex.org/fields/25","display_name":"Materials Science"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T10099","display_name":"GaN-based semiconductor devices and materials","score":0.04340000078082085,"subfield":{"id":"https://openalex.org/subfields/3104","display_name":"Condensed Matter Physics"},"field":{"id":"https://openalex.org/fields/31","display_name":"Physics and Astronomy"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T11160","display_name":"Acoustic Wave Resonator Technologies","score":0.00039999998989515007,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}}],"keywords":[{"id":"https://openalex.org/keywords/band-gap-bowing","display_name":"band gap bowing","score":0.8690000176429749},{"id":"https://openalex.org/keywords/band-gap-tuning","display_name":"band gap tuning","score":0.6819999814033508},{"id":"https://openalex.org/keywords/dilute-nitrides","display_name":"dilute nitrides","score":0.6209999918937683},{"id":"https://openalex.org/keywords/thin-films","display_name":"thin films","score":0.6380000114440918},{"id":"https://openalex.org/keywords/sapphire-substrate","display_name":"sapphire substrate","score":0.6439999938011169},{"id":"https://openalex.org/keywords/heteroepitaxy","display_name":"heteroepitaxy","score":0.8460000157356262},{"id":"https://openalex.org/keywords/vegard-s-law-deviation","display_name":"Vegard's law deviation","score":0.7950000166893005},{"id":"https://openalex.org/keywords/lattice-parameters","display_name":"lattice parameters","score":0.9509999752044678},{"id":"https://openalex.org/keywords/c-axis-orientation","display_name":"c-axis orientation","score":0.8849999904632568},{"id":"https://openalex.org/keywords/optical-absorption","display_name":"optical absorption","score":0.7369999885559082},{"id":"https://openalex.org/keywords/optoelectronic-materials","display_name":"optoelectronic materials","score":0.7360000014305115},{"id":"https://openalex.org/keywords/magnetron-sputtering","display_name":"magnetron sputtering","score":0.7760000228881836}],"concepts":[{"id":"https://openalex.org/C181966813","wikidata":"https://www.wikidata.org/wiki/Q806352","display_name":"Band gap","level":2,"score":0.849987268447876},{"id":"https://openalex.org/C192562407","wikidata":"https://www.wikidata.org/wiki/Q228736","display_name":"Materials science","level":0,"score":0.7647056579589844},{"id":"https://openalex.org/C2780064504","wikidata":"https://www.wikidata.org/wiki/Q127583","display_name":"Sapphire","level":3,"score":0.6022598743438721},{"id":"https://openalex.org/C19067145","wikidata":"https://www.wikidata.org/wiki/Q1137203","display_name":"Thin film","level":2,"score":0.5384355187416077},{"id":"https://openalex.org/C2780787355","wikidata":"https://www.wikidata.org/wiki/Q1354895","display_name":"Bowing","level":2,"score":0.5171441435813904},{"id":"https://openalex.org/C49040817","wikidata":"https://www.wikidata.org/wiki/Q193091","display_name":"Optoelectronics","level":1,"score":0.4766957461833954},{"id":"https://openalex.org/C61427134","wikidata":"https://www.wikidata.org/wiki/Q847609","display_name":"Sputter deposition","level":4,"score":0.4634769856929779},{"id":"https://openalex.org/C132612359","wikidata":"https://www.wikidata.org/wiki/Q625641","display_name":"Lattice constant","level":3,"score":0.4353088140487671},{"id":"https://openalex.org/C22423302","wikidata":"https://www.wikidata.org/wiki/Q898444","display_name":"Sputtering","level":3,"score":0.43136218190193176},{"id":"https://openalex.org/C2781285689","wikidata":"https://www.wikidata.org/wiki/Q21921428","display_name":"Crystal (programming language)","level":2,"score":0.4101729094982147},{"id":"https://openalex.org/C207114421","wikidata":"https://www.wikidata.org/wiki/Q133900","display_name":"Diffraction","level":2,"score":0.37062129378318787},{"id":"https://openalex.org/C120665830","wikidata":"https://www.wikidata.org/wiki/Q14620","display_name":"Optics","level":1,"score":0.360679030418396},{"id":"https://openalex.org/C171250308","wikidata":"https://www.wikidata.org/wiki/Q11468","display_name":"Nanotechnology","level":1,"score":0.16761398315429688},{"id":"https://openalex.org/C138885662","wikidata":"https://www.wikidata.org/wiki/Q5891","display_name":"Philosophy","level":0,"score":0.0},{"id":"https://openalex.org/C520434653","wikidata":"https://www.wikidata.org/wiki/Q38867","display_name":"Laser","level":2,"score":0.0},{"id":"https://openalex.org/C121332964","wikidata":"https://www.wikidata.org/wiki/Q413","display_name":"Physics","level":0,"score":0.0},{"id":"https://openalex.org/C27206212","wikidata":"https://www.wikidata.org/wiki/Q34178","display_name":"Theology","level":1,"score":0.0},{"id":"https://openalex.org/C41008148","wikidata":"https://www.wikidata.org/wiki/Q21198","display_name":"Computer science","level":0,"score":0.0},{"id":"https://openalex.org/C199360897","wikidata":"https://www.wikidata.org/wiki/Q9143","display_name":"Programming language","level":1,"score":0.0}],"mesh":[],"locations_count":1,"locations":[{"id":"doi:10.1088/1361-6641/aaee4a","doi":"https://doi.org/10.1088/1361-6641/aaee4a","is_oa":false,"landing_page_url":"https://doi.org/10.1088/1361-6641/aaee4a","pdf_url":null,"source":{"id":"https://openalex.org/S106302738","display_name":"Semiconductor Science and Technology","issn_l":"0268-1242","issn":["0268-1242","1361-6641"],"is_oa":false,"is_in_doaj":false,"is_core":true,"listed_in":["cwts-core","dongbi-c","jufo-1","norway-1","poland-70","russia-white-list-2"],"host_organization":"https://openalex.org/P4310320083","host_organization_name":"IOP Publishing","host_organization_lineage":["https://openalex.org/P4310320083","https://openalex.org/P4310311669"],"host_organization_lineage_names":["IOP Publishing","Institute of Physics"],"type":"journal"},"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"Semiconductor Science and Technology","raw_type":"journal-article"}],"best_oa_location":null,"sustainable_development_goals":[],"study_designs":[],"awards":[{"id":"https://openalex.org/G2973624523","display_name":null,"funder_award_id":"251131","funder_id":"https://openalex.org/F4320323299","funder_display_name":"Norges Forskningsr\u00e5d"},{"id":"https://openalex.org/G3161193914","display_name":null,"funder_award_id":"245963","funder_id":"https://openalex.org/F4320323299","funder_display_name":"Norges Forskningsr\u00e5d"},{"id":"https://openalex.org/G3537996495","display_name":null,"funder_award_id":"239895","funder_id":"https://openalex.org/F4320323299","funder_display_name":"Norges Forskningsr\u00e5d"},{"id":"https://openalex.org/G3934138050","display_name":null,"funder_award_id":"197405","funder_id":"https://openalex.org/F4320323299","funder_display_name":"Norges Forskningsr\u00e5d"}],"funders":[{"id":"https://openalex.org/F4320323299","display_name":"Norges Forskningsr\u00e5d","ror":"https://ror.org/00epmv149"}],"has_content":{"pdf":false,"grobid_xml":false},"content_urls":null,"referenced_works_count":23,"referenced_works":["https://openalex.org/W352538250","https://openalex.org/W1978044167","https://openalex.org/W2001341166","https://openalex.org/W2010211387","https://openalex.org/W2011187807","https://openalex.org/W2018221272","https://openalex.org/W2018246142","https://openalex.org/W2019761406","https://openalex.org/W2030810609","https://openalex.org/W2032963182","https://openalex.org/W2035282223","https://openalex.org/W2047165001","https://openalex.org/W2052774499","https://openalex.org/W2075718071","https://openalex.org/W2081456112","https://openalex.org/W2085395832","https://openalex.org/W2087414359","https://openalex.org/W2088046961","https://openalex.org/W2096435929","https://openalex.org/W2111826330","https://openalex.org/W2293356513","https://openalex.org/W2746513288","https://openalex.org/W2790146761"],"related_works":["https://openalex.org/W2092862272","https://openalex.org/W2004850886","https://openalex.org/W2049976012","https://openalex.org/W2342735874","https://openalex.org/W2338262355","https://openalex.org/W2801205464","https://openalex.org/W3089446094","https://openalex.org/W4288843662","https://openalex.org/W2588149577","https://openalex.org/W2734258967"],"abstract_inverted_index":{"Abstract":[0],"Thin":[1],"films":[2,57,119,204],"of":[3,39,58,65,156,184,189,205,212],"(ZnO)":[4],"1\u2212":[5],"x":[6,8,24,44,49,107,157,161,194,199],"(GaN)":[7],"with":[9,62,131,137,209],"an":[10],"optical":[11,144,180],"bandgap":[12,41,181,191],"between":[13],"3.3":[14],"and":[15,78,87,94,103,125],"\u223c2.4":[16],"eV":[17],"at":[18],"room":[19],"temperature":[20],"for":[21,45,70,106,195],"0":[22],"\u2264":[23,25,50,200],"0.2":[26,163],"have":[27],"been":[28],"grown":[29],"by":[30,115],"magnetron":[31],"sputtering":[32],"on":[33,43,193],"(0001)-sapphire":[34],"substrates.":[35],"A":[36,140],"strong":[37,187],"dependence":[38,188],"the":[40,66,132,152,179,190,213],"shrinkage":[42,192],"low":[46,196],"values":[47,197],"(":[48,198],"0.07)":[51,201],"not":[52],"previously":[53],"reported":[54],"enables":[55,202],"bandgap-tuned":[56,203],"high":[59,206],"crystal":[60,207],"quality":[61,208],"limited":[63,210],"distortion":[64,211],"ZnO":[67,214],"matrix":[68],"suitable":[69],"optoelectronic":[71],"applications.":[72],"X-ray":[73],"diffraction,":[74],"transmission":[75],"electron":[76],"microscopy":[77],"Rutherford":[79],"backscattering":[80],"spectrometry":[81],"all":[82,164],"show":[83],"a":[84,92,127,149,174],"single":[85],"phase":[86],"highly":[88,121],"crystalline":[89],"films.":[90],"The":[91,118],"-":[93],"c":[95,122],"-lattice":[96],"constants":[97],"are":[98,120],"found":[99],"to":[100,148,160],"be":[101],"3.252":[102],"5.224":[104],"\u00c5":[105],"=":[108,158,162],"0.15,":[109],"i.e.":[110],"larger":[111],"than":[112],"that":[113,183],"predicted":[114],"Vegard\u2019s":[116],"law.":[117],"-axis":[123],"oriented":[124],"exhibit":[126],"good":[128],"heteroepitaxial":[129],"relationship":[130],"sapphire":[133],"substrate,":[134],"growing":[135],"predominantly":[136],"aligned":[138],"domains.":[139],"distinct":[141],"shift":[142,150],"in":[143,151,166],"absorption":[145],"is":[146],"attributed":[147],"bandgap,":[153],"where":[154],"compositions":[155],"0.07":[159],"result":[165],"bandgaps":[167],"around":[168],"or":[169],"below":[170],"2.5":[171],"eV,":[172],"while":[173],"lower":[175],"GaN":[176],"content":[177],"increases":[178],"towards":[182],"ZnO.":[185],"This":[186],"matrix.":[215]},"counts_by_year":[{"year":2022,"cited_by_count":1},{"year":2020,"cited_by_count":3},{"year":2019,"cited_by_count":3}],"updated_date":"2026-11-05T12:25:35.769452","created_date":"2018-11-16T00:00:00"}
