{"id":"https://openalex.org/W2899198537","doi":"https://doi.org/10.1149/2.0211811jss","title":"Sol-Gel Derived Dip Coated ZnO \u2013 La2O3Thin Film Transistors","display_name":"Sol-Gel Derived Dip Coated ZnO \u2013 La2O3Thin Film Transistors","publication_year":2018,"publication_date":"2018-01-01","ids":{"openalex":"https://openalex.org/W2899198537","doi":"https://doi.org/10.1149/2.0211811jss","mag":"2899198537"},"language":"en","primary_location":{"id":"doi:10.1149/2.0211811jss","doi":"https://doi.org/10.1149/2.0211811jss","is_oa":false,"landing_page_url":"https://doi.org/10.1149/2.0211811jss","pdf_url":null,"source":{"id":"https://openalex.org/S2493531148","display_name":"ECS Journal of Solid State Science and Technology","issn_l":"2162-8769","issn":["2162-8769","2162-8777"],"is_oa":false,"is_in_doaj":false,"is_core":true,"listed_in":["cwts-core","dongbi-d","jufo-1","norway-1","poland-70","russia-white-list-2","vabb-shw"],"host_organization":"https://openalex.org/P4310311669","host_organization_name":"Institute of Physics","host_organization_lineage":["https://openalex.org/P4310311669"],"host_organization_lineage_names":["Institute of Physics"],"type":"journal"},"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"ECS Journal of Solid State Science and Technology","raw_type":"journal-article"},"volume":null,"type":"article","is_traditional":true,"indexed_in":["crossref"],"open_access":{"is_oa":false,"oa_status":"closed","oa_url":null,"any_repository_has_fulltext":false},"authorships":[{"author_position":"first","author":{"id":"https://openalex.org/A5115599589","display_name":"Paragjyoti Gogoi","orcid":"https://orcid.org/0000-0003-0542-1237","observed_orcids":["https://orcid.org/0000-0003-0542-1237"]},"institutions":[{"id":"https://openalex.org/I4405287226","display_name":"Sibsagar University","ror":"https://ror.org/04fyc3d74","country_code":"IN","type":"education","lineage":["https://openalex.org/I4405287226"]}],"countries":["IN"],"is_corresponding":false,"raw_author_name":"Paragjyoti Gogoi","raw_affiliation_strings":["Thin Film Laboratory, Department of Physics, Sibsagar College, Joysagar, 785665 Assam, India"],"raw_orcid":"https://orcid.org/0000-0003-0542-1237","affiliations":[{"raw_affiliation_string":"Thin Film Laboratory, Department of Physics, Sibsagar College, Joysagar, 785665 Assam, India","institution_ids":["https://openalex.org/I4405287226"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5033623787","display_name":"Rajib Saikia","orcid":null,"observed_orcids":[]},"institutions":[{"id":"https://openalex.org/I4405287226","display_name":"Sibsagar University","ror":"https://ror.org/04fyc3d74","country_code":"IN","type":"education","lineage":["https://openalex.org/I4405287226"]}],"countries":["IN"],"is_corresponding":false,"raw_author_name":"Rajib Saikia","raw_affiliation_strings":["Thin Film Laboratory, Department of Physics, Sibsagar College, Joysagar, 785665 Assam, India"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Thin Film Laboratory, Department of Physics, Sibsagar College, Joysagar, 785665 Assam, India","institution_ids":["https://openalex.org/I4405287226"]}]},{"author_position":"last","author":{"id":"https://openalex.org/A5078887317","display_name":"Utpal Jyoti Mahanta","orcid":"https://orcid.org/0000-0003-4182-7680","observed_orcids":["https://orcid.org/0000-0003-4182-7680"]},"institutions":[{"id":"https://openalex.org/I4405287226","display_name":"Sibsagar University","ror":"https://ror.org/04fyc3d74","country_code":"IN","type":"education","lineage":["https://openalex.org/I4405287226"]}],"countries":["IN"],"is_corresponding":false,"raw_author_name":"Utpal Jyoti Mahanta","raw_affiliation_strings":["Thin Film Laboratory, Department of Physics, Sibsagar College, Joysagar, 785665 Assam, India"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Thin Film Laboratory, Department of Physics, Sibsagar College, Joysagar, 785665 Assam, India","institution_ids":["https://openalex.org/I4405287226"]}]}],"institutions":[],"countries_distinct_count":1,"institutions_distinct_count":1,"corresponding_author_ids":[],"corresponding_institution_ids":["https://openalex.org/I4405287226"],"apc_list":{"value":1950,"currency":"USD","value_usd":1950},"apc_paid":null,"fwci":0.0957,"has_fulltext":false,"cited_by_count":2,"citation_normalized_percentile":{"value":0.38684438,"is_in_top_1_percent":false,"is_in_top_10_percent":false},"cited_by_percentile_year":{"min":88,"max":93},"biblio":{"volume":"7","issue":"11","first_page":"Q206","last_page":"Q210"},"is_retracted":false,"is_paratext":false,"is_xpac":false,"primary_topic":{"id":"https://openalex.org/T10623","display_name":"Thin-Film Transistor Technologies","score":0.9663000106811523,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},"topics":[{"id":"https://openalex.org/T10623","display_name":"Thin-Film Transistor Technologies","score":0.9663000106811523,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T10090","display_name":"ZnO doping and properties","score":0.030500000342726707,"subfield":{"id":"https://openalex.org/subfields/2505","display_name":"Materials Chemistry"},"field":{"id":"https://openalex.org/fields/25","display_name":"Materials Science"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T10045","display_name":"Organic Electronics and Photovoltaics","score":0.0006000000284984708,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}}],"keywords":[{"id":"https://openalex.org/keywords/zno-thin-films","display_name":"ZnO thin films","score":0.9330000281333923},{"id":"https://openalex.org/keywords/thin-film-transistors","display_name":"thin-film transistors","score":0.9869999885559082},{"id":"https://openalex.org/keywords/sol-gel-dip-coating","display_name":"sol-gel dip coating","score":0.9919999837875366},{"id":"https://openalex.org/keywords/high-k-dielectrics","display_name":"high-k dielectrics","score":0.7559999823570251},{"id":"https://openalex.org/keywords/oxygen-annealing","display_name":"oxygen annealing","score":0.8259999752044678},{"id":"https://openalex.org/keywords/field-effect-mobility","display_name":"field-effect mobility","score":0.9470000267028809},{"id":"https://openalex.org/keywords/threshold-voltage","display_name":"threshold voltage","score":0.9070000052452087},{"id":"https://openalex.org/keywords/subthreshold-swing","display_name":"subthreshold swing","score":0.847000002861023},{"id":"https://openalex.org/keywords/transconductance","display_name":"transconductance","score":0.8769999742507935},{"id":"https://openalex.org/keywords/gain-bandwidth-product","display_name":"gain-bandwidth product","score":0.7269999980926514}],"concepts":[{"id":"https://openalex.org/C192562407","wikidata":"https://www.wikidata.org/wiki/Q228736","display_name":"Materials science","level":0,"score":0.9311304092407227},{"id":"https://openalex.org/C87359718","wikidata":"https://www.wikidata.org/wiki/Q1271916","display_name":"Thin-film transistor","level":3,"score":0.8734291791915894},{"id":"https://openalex.org/C49040817","wikidata":"https://www.wikidata.org/wiki/Q193091","display_name":"Optoelectronics","level":1,"score":0.5814964175224304},{"id":"https://openalex.org/C195370968","wikidata":"https://www.wikidata.org/wiki/Q1754002","display_name":"Threshold voltage","level":4,"score":0.5356131792068481},{"id":"https://openalex.org/C19067145","wikidata":"https://www.wikidata.org/wiki/Q1137203","display_name":"Thin film","level":2,"score":0.5090746283531189},{"id":"https://openalex.org/C31500677","wikidata":"https://www.wikidata.org/wiki/Q4533278","display_name":"Field effect","level":2,"score":0.49880433082580566},{"id":"https://openalex.org/C17525397","wikidata":"https://www.wikidata.org/wiki/Q176140","display_name":"Electrode","level":2,"score":0.4454423785209656},{"id":"https://openalex.org/C172385210","wikidata":"https://www.wikidata.org/wiki/Q5339","display_name":"Transistor","level":3,"score":0.4320128560066223},{"id":"https://openalex.org/C133386390","wikidata":"https://www.wikidata.org/wiki/Q184996","display_name":"Dielectric","level":2,"score":0.4137614369392395},{"id":"https://openalex.org/C166972891","wikidata":"https://www.wikidata.org/wiki/Q5527011","display_name":"Gate dielectric","level":4,"score":0.4119490087032318},{"id":"https://openalex.org/C2779227376","wikidata":"https://www.wikidata.org/wiki/Q6505497","display_name":"Layer (electronics)","level":2,"score":0.3640919327735901},{"id":"https://openalex.org/C165801399","wikidata":"https://www.wikidata.org/wiki/Q25428","display_name":"Voltage","level":2,"score":0.2795109152793884},{"id":"https://openalex.org/C171250308","wikidata":"https://www.wikidata.org/wiki/Q11468","display_name":"Nanotechnology","level":1,"score":0.2202674150466919},{"id":"https://openalex.org/C119599485","wikidata":"https://www.wikidata.org/wiki/Q43035","display_name":"Electrical engineering","level":1,"score":0.19859230518341064},{"id":"https://openalex.org/C127413603","wikidata":"https://www.wikidata.org/wiki/Q11023","display_name":"Engineering","level":0,"score":0.0},{"id":"https://openalex.org/C185592680","wikidata":"https://www.wikidata.org/wiki/Q2329","display_name":"Chemistry","level":0,"score":0.0},{"id":"https://openalex.org/C147789679","wikidata":"https://www.wikidata.org/wiki/Q11372","display_name":"Physical chemistry","level":1,"score":0.0}],"mesh":[],"locations_count":1,"locations":[{"id":"doi:10.1149/2.0211811jss","doi":"https://doi.org/10.1149/2.0211811jss","is_oa":false,"landing_page_url":"https://doi.org/10.1149/2.0211811jss","pdf_url":null,"source":{"id":"https://openalex.org/S2493531148","display_name":"ECS Journal of Solid State Science and Technology","issn_l":"2162-8769","issn":["2162-8769","2162-8777"],"is_oa":false,"is_in_doaj":false,"is_core":true,"listed_in":["cwts-core","dongbi-d","jufo-1","norway-1","poland-70","russia-white-list-2","vabb-shw"],"host_organization":"https://openalex.org/P4310311669","host_organization_name":"Institute of Physics","host_organization_lineage":["https://openalex.org/P4310311669"],"host_organization_lineage_names":["Institute of Physics"],"type":"journal"},"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"ECS Journal of Solid State Science and Technology","raw_type":"journal-article"}],"best_oa_location":null,"sustainable_development_goals":[],"study_designs":[],"awards":[{"id":"https://openalex.org/G3928824733","display_name":null,"funder_award_id":"F. No.42-794/2013","funder_id":"https://openalex.org/F4320320767","funder_display_name":"University Grants Commission"}],"funders":[{"id":"https://openalex.org/F4320320767","display_name":"University Grants Commission","ror":"https://ror.org/04p800546"}],"has_content":{"grobid_xml":false,"pdf":false},"content_urls":null,"referenced_works_count":28,"referenced_works":["https://openalex.org/W197375671","https://openalex.org/W1752807896","https://openalex.org/W1972322706","https://openalex.org/W1979041658","https://openalex.org/W1982099744","https://openalex.org/W1982281084","https://openalex.org/W1984334552","https://openalex.org/W1990714711","https://openalex.org/W1997891353","https://openalex.org/W1997894759","https://openalex.org/W2007800401","https://openalex.org/W2008440453","https://openalex.org/W2011585906","https://openalex.org/W2015710209","https://openalex.org/W2023010144","https://openalex.org/W2026565372","https://openalex.org/W2036512976","https://openalex.org/W2040621579","https://openalex.org/W2042052988","https://openalex.org/W2050123431","https://openalex.org/W2066130678","https://openalex.org/W2078564432","https://openalex.org/W2093945690","https://openalex.org/W2123323669","https://openalex.org/W2131559039","https://openalex.org/W2158322022","https://openalex.org/W2733280488","https://openalex.org/W4382140455"],"related_works":["https://openalex.org/W1752807896","https://openalex.org/W2007800401","https://openalex.org/W2050097101","https://openalex.org/W2003614442","https://openalex.org/W2282827469","https://openalex.org/W2979553750","https://openalex.org/W2072860492","https://openalex.org/W2946784085","https://openalex.org/W2011214470","https://openalex.org/W197375671"],"abstract_inverted_index":{"ZnO":[0,50],"thin":[1,20],"films":[2,51],"are":[3,52,72,89,96],"fabricated":[4,49,73],"utilizing":[5],"a":[6],"cost":[7],"effective":[8],"sol-gel":[9],"dip":[10],"coating":[11],"technique":[12],"and":[13,62,67,91,134],"potentially":[14],"applied":[15],"as":[16,45],"active":[17],"material":[18],"in":[19,54,74],"film":[21],"transistors":[22],"(TFT).":[23],"The":[24,48,70,83,98],"channel":[25],"length":[26],"of":[27,86,104,112,119,125,128,138],"the":[28,87],"TFT":[29],"is":[30,43],"maintained":[31],"at":[32,57],"40":[33],"\u03bcm.":[34],"Thermally":[35],"deposited":[36],"high":[37,115],"\u2013k":[38],"La":[39],"2":[40,107],"O":[41],"3":[42],"used":[44],"dielectric":[46],"material.":[47],"annealed":[53],"oxygen":[55],"atmosphere":[56],"500\u00b0C":[58],"for":[59],"1":[60],"hour":[61],"characterized":[63],"by":[64],"XRD,":[65],"EDX":[66],"SEM":[68],"analysis.":[69],"TFTs":[71,88,99],"top":[75],"gate":[76],"coplanar":[77],"electrodes":[78],"structure":[79],"on":[80],"glass":[81],"substrates.":[82],"electrical":[84,94],"characteristics":[85],"investigated":[90],"some":[92],"important":[93],"parameters":[95],"evaluated.":[97],"exhibit":[100],"field":[101],"effect":[102],"mobility":[103],"1.9":[105],"cm":[106],"/VS,":[108],"low":[109],"threshold":[110],"voltage":[111],"2.5":[113],"Volt,":[114],"ON/OFF":[116],"current":[117],"ratio":[118],"10":[120,131],"7":[121],",":[122],"sub-threshold":[123],"swing":[124],"0.8V/decade,":[126],"transconductace":[127],"1.2":[129],"\u00d7":[130],"\u22123":[132],"mho":[133],"gain":[135],"band-width":[136],"product":[137],"20":[139],"kHz.":[140]},"counts_by_year":[{"year":2024,"cited_by_count":1},{"year":2019,"cited_by_count":1}],"updated_date":"2026-10-24T09:50:30.924529","created_date":"2018-11-09T00:00:00"}