{"id":"https://openalex.org/W2889736243","doi":"https://doi.org/10.1117/12.2322915","title":"Design and performance study of a DC\u2013DC ZETA converter with wide bandgap power devices","display_name":"Design and performance study of a DC\u2013DC ZETA converter with wide bandgap power devices","publication_year":2018,"publication_date":"2018-09-07","ids":{"openalex":"https://openalex.org/W2889736243","doi":"https://doi.org/10.1117/12.2322915","mag":"2889736243"},"language":"en","primary_location":{"id":"doi:10.1117/12.2322915","doi":"https://doi.org/10.1117/12.2322915","is_oa":false,"landing_page_url":"https://doi.org/10.1117/12.2322915","pdf_url":null,"source":null,"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"Wide Bandgap Power and Energy Devices and Applications III","raw_type":"proceedings-article"},"volume":null,"type":"conference-paper","is_traditional":true,"indexed_in":["crossref"],"open_access":{"is_oa":false,"oa_status":"closed","oa_url":null,"any_repository_has_fulltext":false},"authorships":[{"author_position":"first","author":{"id":"https://openalex.org/A5036078502","display_name":"Ali M. S. Al-bayati","orcid":null,"observed_orcids":[]},"institutions":[{"id":"https://openalex.org/I131651094","display_name":"University of Denver","ror":"https://ror.org/04w7skc03","country_code":"US","type":"education","lineage":["https://openalex.org/I131651094"]}],"countries":["US"],"is_corresponding":false,"raw_author_name":"Ali M.  S. Al-bayati","raw_affiliation_strings":["Univ. of Denver (United States)"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Univ. of Denver (United States)","institution_ids":["https://openalex.org/I131651094"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5008476642","display_name":"Salah S. Alharbi","orcid":"https://orcid.org/0000-0002-9820-8509","observed_orcids":["https://orcid.org/0000-0002-9820-8509"]},"institutions":[{"id":"https://openalex.org/I131651094","display_name":"University of Denver","ror":"https://ror.org/04w7skc03","country_code":"US","type":"education","lineage":["https://openalex.org/I131651094"]}],"countries":["US"],"is_corresponding":false,"raw_author_name":"Salah S. Alharbi","raw_affiliation_strings":["Univ. of Denver (United States)"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Univ. of Denver (United States)","institution_ids":["https://openalex.org/I131651094"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5066214892","display_name":"Saleh S. Alharbi","orcid":"https://orcid.org/0009-0000-1377-6199","observed_orcids":["https://orcid.org/0009-0000-1377-6199"]},"institutions":[{"id":"https://openalex.org/I131651094","display_name":"University of Denver","ror":"https://ror.org/04w7skc03","country_code":"US","type":"education","lineage":["https://openalex.org/I131651094"]}],"countries":["US"],"is_corresponding":false,"raw_author_name":"Saleh S. Alharbi","raw_affiliation_strings":["Univ. of Denver (United States)"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Univ. of Denver (United States)","institution_ids":["https://openalex.org/I131651094"]}]},{"author_position":"last","author":{"id":"https://openalex.org/A5064496293","display_name":"M. A. Matin","orcid":"https://orcid.org/0000-0002-3706-9779","observed_orcids":["https://orcid.org/0000-0002-3706-9779","https://orcid.org/0000-0002-7898-0999"]},"institutions":[{"id":"https://openalex.org/I131651094","display_name":"University of Denver","ror":"https://ror.org/04w7skc03","country_code":"US","type":"education","lineage":["https://openalex.org/I131651094"]}],"countries":["US"],"is_corresponding":false,"raw_author_name":"Mohammad  A. Matin","raw_affiliation_strings":["Univ. of Denver (United States)"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Univ. of Denver (United States)","institution_ids":["https://openalex.org/I131651094"]}]}],"institutions":[],"countries_distinct_count":1,"institutions_distinct_count":1,"corresponding_author_ids":[],"corresponding_institution_ids":["https://openalex.org/I131651094"],"apc_list":null,"apc_paid":null,"fwci":0.0,"has_fulltext":false,"cited_by_count":0,"citation_normalized_percentile":{"value":0.0,"is_in_top_1_percent":false,"is_in_top_10_percent":false},"cited_by_percentile_year":null,"biblio":{"volume":null,"issue":null,"first_page":"18","last_page":"18"},"is_retracted":false,"is_paratext":false,"is_xpac":false,"primary_topic":{"id":"https://openalex.org/T10175","display_name":"Advanced DC-DC Converters","score":0.9990000128746033,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},"topics":[{"id":"https://openalex.org/T10175","display_name":"Advanced DC-DC Converters","score":0.9990000128746033,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T10361","display_name":"Silicon Carbide Semiconductor Technologies","score":0.000699999975040555,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T10228","display_name":"Multilevel Inverters and Converters","score":9.999999747378752e-05,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}}],"keywords":[{"id":"https://openalex.org/keywords/zeta-converter","display_name":"zeta converter","score":0.8759999871253967},{"id":"https://openalex.org/keywords/dc-dc-converter","display_name":"DC-DC converter","score":0.9309999942779541},{"id":"https://openalex.org/keywords/wide-bandgap-power-devices","display_name":"wide bandgap power devices","score":0.9409999847412109},{"id":"https://openalex.org/keywords/sic-mosfet","display_name":"SiC MOSFET","score":0.9729999899864197},{"id":"https://openalex.org/keywords/sic-schottky-diodes","display_name":"SiC Schottky diodes","score":0.9990000128746033},{"id":"https://openalex.org/keywords/si-igbt","display_name":"Si IGBT","score":0.8799999952316284},{"id":"https://openalex.org/keywords/switching-characteristics","display_name":"switching characteristics","score":0.8479999899864197},{"id":"https://openalex.org/keywords/power-losses","display_name":"power losses","score":0.7960000038146973},{"id":"https://openalex.org/keywords/converter-efficiency","display_name":"converter efficiency","score":0.8679999709129333},{"id":"https://openalex.org/keywords/power-conversion","display_name":"power conversion","score":0.6809999942779541}],"concepts":[{"id":"https://openalex.org/C205200001","wikidata":"https://www.wikidata.org/wiki/Q176066","display_name":"Schottky diode","level":3,"score":0.784959614276886},{"id":"https://openalex.org/C192562407","wikidata":"https://www.wikidata.org/wiki/Q228736","display_name":"Materials science","level":0,"score":0.6932586431503296},{"id":"https://openalex.org/C129014197","wikidata":"https://www.wikidata.org/wiki/Q906544","display_name":"Power semiconductor device","level":3,"score":0.6214426159858704},{"id":"https://openalex.org/C28285623","wikidata":"https://www.wikidata.org/wiki/Q176110","display_name":"Insulated-gate bipolar transistor","level":3,"score":0.6091979146003723},{"id":"https://openalex.org/C2778413303","wikidata":"https://www.wikidata.org/wiki/Q210793","display_name":"MOSFET","level":4,"score":0.5508317947387695},{"id":"https://openalex.org/C119599485","wikidata":"https://www.wikidata.org/wiki/Q43035","display_name":"Electrical engineering","level":1,"score":0.5301167964935303},{"id":"https://openalex.org/C78434282","wikidata":"https://www.wikidata.org/wiki/Q11656","display_name":"Diode","level":2,"score":0.5046061277389526},{"id":"https://openalex.org/C49040817","wikidata":"https://www.wikidata.org/wiki/Q193091","display_name":"Optoelectronics","level":1,"score":0.489776611328125},{"id":"https://openalex.org/C189278905","wikidata":"https://www.wikidata.org/wiki/Q2157708","display_name":"Wide-bandgap semiconductor","level":2,"score":0.4820581376552582},{"id":"https://openalex.org/C78336795","wikidata":"https://www.wikidata.org/wiki/Q760134","display_name":"Boost converter","level":3,"score":0.4750518798828125},{"id":"https://openalex.org/C16115445","wikidata":"https://www.wikidata.org/wiki/Q2391942","display_name":"Schottky barrier","level":3,"score":0.45646917819976807},{"id":"https://openalex.org/C88653102","wikidata":"https://www.wikidata.org/wiki/Q570553","display_name":"Power MOSFET","level":5,"score":0.4450598359107971},{"id":"https://openalex.org/C2780722187","wikidata":"https://www.wikidata.org/wiki/Q412356","display_name":"Silicon carbide","level":2,"score":0.4414263367652893},{"id":"https://openalex.org/C163258240","wikidata":"https://www.wikidata.org/wiki/Q25342","display_name":"Power (physics)","level":2,"score":0.4196026623249054},{"id":"https://openalex.org/C24326235","wikidata":"https://www.wikidata.org/wiki/Q126095","display_name":"Electronic engineering","level":1,"score":0.4094698429107666},{"id":"https://openalex.org/C127413603","wikidata":"https://www.wikidata.org/wiki/Q11023","display_name":"Engineering","level":0,"score":0.2412932813167572},{"id":"https://openalex.org/C165801399","wikidata":"https://www.wikidata.org/wiki/Q25428","display_name":"Voltage","level":2,"score":0.21495762467384338},{"id":"https://openalex.org/C172385210","wikidata":"https://www.wikidata.org/wiki/Q5339","display_name":"Transistor","level":3,"score":0.17421522736549377},{"id":"https://openalex.org/C121332964","wikidata":"https://www.wikidata.org/wiki/Q413","display_name":"Physics","level":0,"score":0.10452419519424438},{"id":"https://openalex.org/C62520636","wikidata":"https://www.wikidata.org/wiki/Q944","display_name":"Quantum mechanics","level":1,"score":0.0},{"id":"https://openalex.org/C191897082","wikidata":"https://www.wikidata.org/wiki/Q11467","display_name":"Metallurgy","level":1,"score":0.0}],"mesh":[],"locations_count":1,"locations":[{"id":"doi:10.1117/12.2322915","doi":"https://doi.org/10.1117/12.2322915","is_oa":false,"landing_page_url":"https://doi.org/10.1117/12.2322915","pdf_url":null,"source":null,"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"Wide Bandgap Power and Energy Devices and Applications III","raw_type":"proceedings-article"}],"best_oa_location":null,"sustainable_development_goals":[{"score":0.9853000044822693,"display_name":"Affordable and clean energy","id":"https://metadata.un.org/sdg/7"},{"score":0.651199996471405,"display_name":"Industry, innovation and infrastructure","id":"https://metadata.un.org/sdg/9"}],"study_designs":[],"awards":[],"funders":[],"has_content":{"pdf":false,"grobid_xml":false},"content_urls":null,"referenced_works_count":3,"referenced_works":["https://openalex.org/W2475871597","https://openalex.org/W2626455724","https://openalex.org/W2760476062"],"related_works":["https://openalex.org/W2923694108","https://openalex.org/W2798159780","https://openalex.org/W2770561979","https://openalex.org/W2760476062","https://openalex.org/W3180421684","https://openalex.org/W2769071896","https://openalex.org/W2020815451","https://openalex.org/W2768369363","https://openalex.org/W2484112936","https://openalex.org/W4387250346"],"abstract_inverted_index":{"The":[0,42,66,103],"rapid":[1],"growth":[2],"in":[3],"renewable":[4],"energy":[5],"based":[6,46,64],"electric":[7],"power":[8,18,40,76,91],"generation":[9],"continuously":[10],"pushes":[11],"for":[12],"the":[13,26,70,79,89,97,107,110],"need":[14],"of":[15,31,69,88,96],"high":[16],"performance":[17,29,55],"conversion":[19],"systems.":[20],"This":[21],"paper":[22],"mainly":[23],"focuses":[24],"on":[25,47],"design":[27],"and":[28,53,73,83,93,101],"study":[30],"a":[32,48,59],"DC\u2013":[33],"DC":[34],"ZETA":[35],"converter":[36,43,80,98,108],"using":[37],"wide":[38],"bandgap":[39],"devices.":[41],"is":[44,56,99],"designed":[45],"SiC":[49,71,111],"MOSFET/SiC":[50,112],"Schottky":[51,62,113],"diode,":[52],"its":[54],"compared":[57],"with":[58,109],"Si":[60,74],"IGBT/SiC":[61],"diode":[63,114],"converter.":[65],"switching":[67],"characteristics":[68],"MOSFET":[72],"IGBT":[75],"devices":[77],"within":[78],"are":[81],"studied":[82],"compared.":[84],"A":[85],"comprehensive":[86],"evaluation":[87],"total":[90],"loss":[92],"overall":[94],"efficiency":[95],"analyzed":[100],"reported.":[102],"results":[104],"indicate":[105],"that":[106],"has":[115],"great":[116],"potential":[117],"to":[118],"work":[119],"efficiently":[120],"under":[121],"different":[122],"operating":[123],"conditions.":[124]},"counts_by_year":[],"updated_date":"2026-10-11T09:32:39.932853","created_date":"2018-09-27T00:00:00"}