{"id":"https://openalex.org/W2887082689","doi":"https://doi.org/10.1149/2.0211808jss","title":"Tuning the Threshold Voltage of Exfoliated \u03b2-Ga2O3Flake-Based Field-Effect Transistors by Photo-Enhanced H3PO4Wet Etching","display_name":"Tuning the Threshold Voltage of Exfoliated \u03b2-Ga2O3Flake-Based Field-Effect Transistors by Photo-Enhanced H3PO4Wet Etching","publication_year":2018,"publication_date":"2018-01-01","ids":{"openalex":"https://openalex.org/W2887082689","doi":"https://doi.org/10.1149/2.0211808jss","mag":"2887082689"},"language":"en","primary_location":{"id":"doi:10.1149/2.0211808jss","doi":"https://doi.org/10.1149/2.0211808jss","is_oa":true,"landing_page_url":"https://doi.org/10.1149/2.0211808jss","pdf_url":"https://iopscience.iop.org/article/10.1149/2.0211808jss/pdf","source":{"id":"https://openalex.org/S2493531148","display_name":"ECS Journal of Solid State Science and Technology","issn_l":"2162-8769","issn":["2162-8769","2162-8777"],"is_oa":false,"is_in_doaj":false,"is_core":true,"listed_in":["cwts-core","dongbi-d","jufo-1","norway-1","poland-70","russia-white-list-2","vabb-shw"],"host_organization":"https://openalex.org/P4310311669","host_organization_name":"Institute of Physics","host_organization_lineage":["https://openalex.org/P4310311669"],"host_organization_lineage_names":["Institute of Physics"],"type":"journal"},"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"ECS Journal of Solid State Science and Technology","raw_type":"journal-article"},"volume":null,"type":"article","is_traditional":true,"indexed_in":["crossref"],"open_access":{"is_oa":true,"oa_status":"bronze","oa_url":"https://iopscience.iop.org/article/10.1149/2.0211808jss/pdf","any_repository_has_fulltext":false},"authorships":[{"author_position":"first","author":{"id":"https://openalex.org/A5063035211","display_name":"Jongha Son","orcid":null,"observed_orcids":[]},"institutions":[{"id":"https://openalex.org/I197347611","display_name":"Korea University","ror":"https://ror.org/047dqcg40","country_code":"KR","type":"education","lineage":["https://openalex.org/I197347611"]}],"countries":["KR"],"is_corresponding":false,"raw_author_name":"Jongha Son","raw_affiliation_strings":["Department of Chemical and Biological Engineering, Korea University, Seoul 02841, Korea"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Department of Chemical and Biological Engineering, Korea University, Seoul 02841, Korea","institution_ids":["https://openalex.org/I197347611"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5031067661","display_name":"Yongbeom Kwon","orcid":"https://orcid.org/0000-0002-0858-2733","observed_orcids":["https://orcid.org/0000-0002-0858-2733"]},"institutions":[{"id":"https://openalex.org/I197347611","display_name":"Korea University","ror":"https://ror.org/047dqcg40","country_code":"KR","type":"education","lineage":["https://openalex.org/I197347611"]}],"countries":["KR"],"is_corresponding":false,"raw_author_name":"Yongbeom Kwon","raw_affiliation_strings":["Department of Chemical and Biological Engineering, Korea University, Seoul 02841, Korea"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Department of Chemical and Biological Engineering, Korea University, Seoul 02841, Korea","institution_ids":["https://openalex.org/I197347611"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5026515532","display_name":"Janghyuk Kim","orcid":null,"observed_orcids":[]},"institutions":[{"id":"https://openalex.org/I197347611","display_name":"Korea University","ror":"https://ror.org/047dqcg40","country_code":"KR","type":"education","lineage":["https://openalex.org/I197347611"]}],"countries":["KR"],"is_corresponding":false,"raw_author_name":"Janghyuk Kim","raw_affiliation_strings":["Department of Chemical and Biological Engineering, Korea University, Seoul 02841, Korea"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Department of Chemical and Biological Engineering, Korea University, Seoul 02841, Korea","institution_ids":["https://openalex.org/I197347611"]}]},{"author_position":"last","author":{"id":"https://openalex.org/A5100462779","display_name":"Jihyun Kim","orcid":"https://orcid.org/0000-0002-5634-8394","observed_orcids":["https://orcid.org/0000-0002-5634-8394","https://orcid.org/0000-0002-5119-6627"]},"institutions":[{"id":"https://openalex.org/I197347611","display_name":"Korea University","ror":"https://ror.org/047dqcg40","country_code":"KR","type":"education","lineage":["https://openalex.org/I197347611"]}],"countries":["KR"],"is_corresponding":false,"raw_author_name":"Jihyun Kim","raw_affiliation_strings":["Department of Chemical and Biological Engineering, Korea University, Seoul 02841, Korea"],"raw_orcid":"https://orcid.org/0000-0002-5634-8394","affiliations":[{"raw_affiliation_string":"Department of Chemical and Biological Engineering, Korea University, Seoul 02841, Korea","institution_ids":["https://openalex.org/I197347611"]}]}],"institutions":[],"countries_distinct_count":1,"institutions_distinct_count":1,"corresponding_author_ids":[],"corresponding_institution_ids":["https://openalex.org/I197347611"],"apc_list":{"value":1950,"currency":"USD","value_usd":1950},"apc_paid":null,"fwci":1.3132,"has_fulltext":true,"cited_by_count":33,"citation_normalized_percentile":{"value":0.78520008,"is_in_top_1_percent":false,"is_in_top_10_percent":false},"cited_by_percentile_year":{"min":91,"max":98},"biblio":{"volume":"7","issue":"8","first_page":"Q148","last_page":"Q151"},"is_retracted":false,"is_paratext":false,"is_xpac":false,"primary_topic":{"id":"https://openalex.org/T12529","display_name":"Ga2O3 and related materials","score":1.0,"subfield":{"id":"https://openalex.org/subfields/2504","display_name":"Electronic, Optical and Magnetic Materials"},"field":{"id":"https://openalex.org/fields/25","display_name":"Materials Science"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},"topics":[{"id":"https://openalex.org/T12529","display_name":"Ga2O3 and related materials","score":1.0,"subfield":{"id":"https://openalex.org/subfields/2504","display_name":"Electronic, Optical and Magnetic Materials"},"field":{"id":"https://openalex.org/fields/25","display_name":"Materials Science"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T10275","display_name":"2D Materials and Applications","score":0.0,"subfield":{"id":"https://openalex.org/subfields/2505","display_name":"Materials Chemistry"},"field":{"id":"https://openalex.org/fields/25","display_name":"Materials Science"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T10472","display_name":"Semiconductor materials and devices","score":0.0,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}}],"keywords":[{"id":"https://openalex.org/keywords/beta-ga2o3","display_name":"\u03b2-Ga2O3","score":0.9829999804496765},{"id":"https://openalex.org/keywords/field-effect-transistors","display_name":"field-effect transistors","score":0.9100000262260437},{"id":"https://openalex.org/keywords/threshold-voltage-tuning","display_name":"threshold voltage control","score":0.9750000238418579},{"id":"https://openalex.org/keywords/thickness-control","display_name":"thickness control","score":0.6100000143051147},{"id":"https://openalex.org/keywords/back-gated-fet","display_name":"back-gated FET","score":0.8230000138282776},{"id":"https://openalex.org/keywords/subthreshold-swing","display_name":"subthreshold swing","score":0.8119999766349792},{"id":"https://openalex.org/keywords/on-off-ratio","display_name":"on/off current ratio","score":0.8889999985694885},{"id":"https://openalex.org/keywords/field-effect-mobility","display_name":"field-effect mobility","score":0.9769999980926514},{"id":"https://openalex.org/keywords/wide-bandgap-semiconductors","display_name":"wide bandgap semiconductors","score":0.8930000066757202},{"id":"https://openalex.org/keywords/nanoelectronics","display_name":"nanoelectronics","score":0.6660000085830688}],"concepts":[{"id":"https://openalex.org/C192562407","wikidata":"https://www.wikidata.org/wiki/Q228736","display_name":"Materials science","level":0,"score":0.9042887687683105},{"id":"https://openalex.org/C141400236","wikidata":"https://www.wikidata.org/wiki/Q1479544","display_name":"Nanoelectronics","level":2,"score":0.7468722462654114},{"id":"https://openalex.org/C195370968","wikidata":"https://www.wikidata.org/wiki/Q1754002","display_name":"Threshold voltage","level":4,"score":0.6766478419303894},{"id":"https://openalex.org/C49040817","wikidata":"https://www.wikidata.org/wiki/Q193091","display_name":"Optoelectronics","level":1,"score":0.6243205666542053},{"id":"https://openalex.org/C100460472","wikidata":"https://www.wikidata.org/wiki/Q2368605","display_name":"Etching (microfabrication)","level":3,"score":0.5785367488861084},{"id":"https://openalex.org/C172385210","wikidata":"https://www.wikidata.org/wiki/Q5339","display_name":"Transistor","level":3,"score":0.5311402678489685},{"id":"https://openalex.org/C145598152","wikidata":"https://www.wikidata.org/wiki/Q176097","display_name":"Field-effect transistor","level":4,"score":0.5163053870201111},{"id":"https://openalex.org/C129162502","wikidata":"https://www.wikidata.org/wiki/Q1200889","display_name":"Exfoliation joint","level":3,"score":0.48824170231819153},{"id":"https://openalex.org/C171250308","wikidata":"https://www.wikidata.org/wiki/Q11468","display_name":"Nanotechnology","level":1,"score":0.46000152826309204},{"id":"https://openalex.org/C2779227376","wikidata":"https://www.wikidata.org/wiki/Q6505497","display_name":"Layer (electronics)","level":2,"score":0.43318140506744385},{"id":"https://openalex.org/C165801399","wikidata":"https://www.wikidata.org/wiki/Q25428","display_name":"Voltage","level":2,"score":0.3897120952606201},{"id":"https://openalex.org/C30080830","wikidata":"https://www.wikidata.org/wiki/Q169917","display_name":"Graphene","level":2,"score":0.1142246425151825},{"id":"https://openalex.org/C119599485","wikidata":"https://www.wikidata.org/wiki/Q43035","display_name":"Electrical engineering","level":1,"score":0.10320448875427246},{"id":"https://openalex.org/C127413603","wikidata":"https://www.wikidata.org/wiki/Q11023","display_name":"Engineering","level":0,"score":0.0}],"mesh":[],"locations_count":1,"locations":[{"id":"doi:10.1149/2.0211808jss","doi":"https://doi.org/10.1149/2.0211808jss","is_oa":true,"landing_page_url":"https://doi.org/10.1149/2.0211808jss","pdf_url":"https://iopscience.iop.org/article/10.1149/2.0211808jss/pdf","source":{"id":"https://openalex.org/S2493531148","display_name":"ECS Journal of Solid State Science and Technology","issn_l":"2162-8769","issn":["2162-8769","2162-8777"],"is_oa":false,"is_in_doaj":false,"is_core":true,"listed_in":["cwts-core","dongbi-d","jufo-1","norway-1","poland-70","russia-white-list-2","vabb-shw"],"host_organization":"https://openalex.org/P4310311669","host_organization_name":"Institute of Physics","host_organization_lineage":["https://openalex.org/P4310311669"],"host_organization_lineage_names":["Institute of Physics"],"type":"journal"},"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"ECS Journal of Solid State Science and Technology","raw_type":"journal-article"}],"best_oa_location":{"id":"doi:10.1149/2.0211808jss","doi":"https://doi.org/10.1149/2.0211808jss","is_oa":true,"landing_page_url":"https://doi.org/10.1149/2.0211808jss","pdf_url":"https://iopscience.iop.org/article/10.1149/2.0211808jss/pdf","source":{"id":"https://openalex.org/S2493531148","display_name":"ECS Journal of Solid State Science and Technology","issn_l":"2162-8769","issn":["2162-8769","2162-8777"],"is_oa":false,"is_in_doaj":false,"is_core":true,"listed_in":["cwts-core","dongbi-d","jufo-1","norway-1","poland-70","russia-white-list-2","vabb-shw"],"host_organization":"https://openalex.org/P4310311669","host_organization_name":"Institute of Physics","host_organization_lineage":["https://openalex.org/P4310311669"],"host_organization_lineage_names":["Institute of Physics"],"type":"journal"},"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"ECS Journal of Solid State Science and Technology","raw_type":"journal-article"},"sustainable_development_goals":[],"study_designs":[],"awards":[{"id":"https://openalex.org/G268074509","display_name":null,"funder_award_id":"20173010012970","funder_id":"https://openalex.org/F4320335199","funder_display_name":"Korea Institute of Energy Technology Evaluation and Planning"},{"id":"https://openalex.org/G4902162394","display_name":null,"funder_award_id":"20172010104830","funder_id":"https://openalex.org/F4320335199","funder_display_name":"Korea Institute of Energy Technology Evaluation and Planning"}],"funders":[{"id":"https://openalex.org/F4320321373","display_name":"Korea University","ror":"https://ror.org/047dqcg40"},{"id":"https://openalex.org/F4320335199","display_name":"Korea Institute of Energy Technology Evaluation and Planning","ror":"https://ror.org/02zq38y32"}],"has_content":{"pdf":true,"grobid_xml":true},"content_urls":{"pdf":"https://content.openalex.org/works/W2887082689.pdf","grobid_xml":"https://content.openalex.org/works/W2887082689.grobid-xml"},"referenced_works_count":34,"referenced_works":["https://openalex.org/W126586751","https://openalex.org/W1492977420","https://openalex.org/W1570254354","https://openalex.org/W1692363615","https://openalex.org/W1709694534","https://openalex.org/W1973821320","https://openalex.org/W1976670560","https://openalex.org/W1982876375","https://openalex.org/W1987259288","https://openalex.org/W1996251119","https://openalex.org/W2020431932","https://openalex.org/W2041311241","https://openalex.org/W2071070799","https://openalex.org/W2134233006","https://openalex.org/W2145235731","https://openalex.org/W2154281786","https://openalex.org/W2175116097","https://openalex.org/W2234581149","https://openalex.org/W2344472341","https://openalex.org/W2389630915","https://openalex.org/W2392653369","https://openalex.org/W2496330936","https://openalex.org/W2510333170","https://openalex.org/W2518552143","https://openalex.org/W2519998382","https://openalex.org/W2533599183","https://openalex.org/W2551166540","https://openalex.org/W2558508473","https://openalex.org/W2587323675","https://openalex.org/W2593067560","https://openalex.org/W2601633720","https://openalex.org/W2736803134","https://openalex.org/W2775278910","https://openalex.org/W2776022014"],"related_works":["https://openalex.org/W4283451590","https://openalex.org/W2601633720","https://openalex.org/W4200321677","https://openalex.org/W4239810440","https://openalex.org/W3080253503","https://openalex.org/W2648610839","https://openalex.org/W2951906944","https://openalex.org/W3186079399","https://openalex.org/W3020981148","https://openalex.org/W3024844137"],"abstract_inverted_index":{"Monoclinic":[0],"\u03b2-Ga":[1,31,90,161],"2":[2,32,91,137,162],"O":[3,33,92,138,163],"3":[4,34,93,139,147,164],"with":[5],"an":[6,39],"ultra-wide":[7],"energy":[8],"bandgap":[9],"of":[10,18,30,88,102,122,131,159],"\u223c4.9":[11],"eV":[12],"has":[13,61],"facile":[14],"cleavage":[15],"planes":[16],"because":[17],"the":[19,23,46,57,86,99,123,132,144,154,157],"high":[20],"anisotropy":[21],"in":[22,43,55,166],"lattice":[24],"structure.":[25],"An":[26],"exfoliated":[27,89,160],"nanolayer":[28],"flake":[29],"can":[35],"be":[36],"used":[37,50],"as":[38,128],"active":[40,133],"channel":[41,134],"layer":[42,60,135],"nanoelectronics.":[44,167],"However,":[45],"mechanical":[47],"exfoliation":[48],"method":[49],"poses":[51],"a":[52,62,79,129],"fundamental":[53],"issue":[54],"that":[56],"separated":[58],"individual":[59],"random":[63],"thickness,":[64],"which":[65],"makes":[66],"it":[67],"challenging":[68],"to":[69,84,97],"obtain":[70],"reproducible":[71],"device":[72,111],"performance.":[73],"In":[74],"our":[75],"study,":[76],"we":[77],"demonstrated":[78],"photo-enhanced":[80,145],"chemical":[81],"etching":[82],"technique":[83],"control":[85],"thickness":[87,141],"nanolayers,":[94],"enabling":[95],"us":[96],"adjust":[98],"threshold":[100],"voltage":[101],"field-effect":[103,120],"transistors":[104],"(FETs)":[105],"based":[106],"on":[107],"these":[108],"nanolayers.":[109],"Thickness-dependent":[110],"characteristics":[112],"(threshold":[113],"voltage,":[114],"subthreshold":[115],"swing,":[116],"on/off":[117],"ratio,":[118],"and":[119],"mobility)":[121],"back-gated":[124],"FETs":[125],"were":[126],"investigated":[127],"function":[130],"(\u03b2-Ga":[136],")":[140],"achieved":[142],"by":[143],"H":[146],"PO":[148],"4":[149],"etching.":[150],"Our":[151],"study":[152],"paves":[153],"way":[155],"for":[156],"implementation":[158],"nanolayers":[165]},"counts_by_year":[{"year":2026,"cited_by_count":1},{"year":2025,"cited_by_count":4},{"year":2024,"cited_by_count":5},{"year":2023,"cited_by_count":3},{"year":2022,"cited_by_count":3},{"year":2021,"cited_by_count":6},{"year":2020,"cited_by_count":4},{"year":2019,"cited_by_count":5},{"year":2018,"cited_by_count":2}],"updated_date":"2026-10-16T09:59:22.235173","created_date":"2018-08-22T00:00:00"}