{"id":"https://openalex.org/W2883202075","doi":"https://doi.org/10.1080/10420150.2018.1499735","title":"The effects of high-energy ion irradiations on the I\u2013V characteristics of silicon NPN transistors","display_name":"The effects of high-energy ion irradiations on the I\u2013V characteristics of silicon NPN transistors","publication_year":2018,"publication_date":"2018-07-22","ids":{"openalex":"https://openalex.org/W2883202075","doi":"https://doi.org/10.1080/10420150.2018.1499735","mag":"2883202075"},"language":"en","primary_location":{"id":"doi:10.1080/10420150.2018.1499735","doi":"https://doi.org/10.1080/10420150.2018.1499735","is_oa":false,"landing_page_url":"https://doi.org/10.1080/10420150.2018.1499735","pdf_url":null,"source":{"id":"https://openalex.org/S201266914","display_name":"Radiation effects and defects in solids","issn_l":"1026-549X","issn":["1026-549X","1029-4953","1042-0150"],"is_oa":false,"is_in_doaj":false,"is_core":true,"listed_in":["anvur-scientific","cwts-core","dongbi-d","jufo-1","norway-1","poland-40","russia-white-list-3"],"host_organization":"https://openalex.org/P4310320547","host_organization_name":"Taylor & Francis","host_organization_lineage":["https://openalex.org/P4310320547","https://openalex.org/P4310320449"],"host_organization_lineage_names":["Taylor & Francis","Informa"],"type":"journal"},"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"Radiation Effects and Defects in Solids","raw_type":"journal-article"},"volume":null,"type":"article","is_traditional":true,"indexed_in":["crossref"],"open_access":{"is_oa":false,"oa_status":"closed","oa_url":null,"any_repository_has_fulltext":false},"authorships":[{"author_position":"first","author":{"id":"https://openalex.org/A5102917718","display_name":"A. P. Gnana Prakash","orcid":"https://orcid.org/0000-0002-3591-3980","observed_orcids":["https://orcid.org/0000-0002-3591-3980"]},"institutions":[{"id":"https://openalex.org/I204743663","display_name":"University of Mysore","ror":"https://ror.org/012bxv356","country_code":"IN","type":"education","lineage":["https://openalex.org/I204743663"]}],"countries":["IN"],"is_corresponding":true,"raw_author_name":"A. P. Gnana Prakash","raw_affiliation_strings":["Department of Studies in Physics, University of Mysore, Mysore, India"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Department of Studies in Physics, University of Mysore, Mysore, India","institution_ids":["https://openalex.org/I204743663"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5015204735","display_name":"M. N. Bharathi","orcid":null,"observed_orcids":[]},"institutions":[{"id":"https://openalex.org/I204743663","display_name":"University of Mysore","ror":"https://ror.org/012bxv356","country_code":"IN","type":"education","lineage":["https://openalex.org/I204743663"]}],"countries":["IN"],"is_corresponding":false,"raw_author_name":"M. N. Bharathi","raw_affiliation_strings":["Department of Studies in Physics, University of Mysore, Mysore, India"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Department of Studies in Physics, University of Mysore, Mysore, India","institution_ids":["https://openalex.org/I204743663"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5079487525","display_name":"Vinayakprasanna Narayan Hegde","orcid":"https://orcid.org/0000-0001-6933-2773","observed_orcids":["https://orcid.org/0000-0001-6933-2773"]},"institutions":[{"id":"https://openalex.org/I204743663","display_name":"University of Mysore","ror":"https://ror.org/012bxv356","country_code":"IN","type":"education","lineage":["https://openalex.org/I204743663"]}],"countries":["IN"],"is_corresponding":false,"raw_author_name":"Vinayakprasanna N. Hegde","raw_affiliation_strings":["Department of Studies in Physics, University of Mysore, Mysore, India"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Department of Studies in Physics, University of Mysore, Mysore, India","institution_ids":["https://openalex.org/I204743663"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5103751142","display_name":"T. M. Pradeep","orcid":"https://orcid.org/0009-0005-7206-4235","observed_orcids":["https://orcid.org/0009-0005-7206-4235"]},"institutions":[{"id":"https://openalex.org/I204743663","display_name":"University of Mysore","ror":"https://ror.org/012bxv356","country_code":"IN","type":"education","lineage":["https://openalex.org/I204743663"]}],"countries":["IN"],"is_corresponding":false,"raw_author_name":"T. M. Pradeep","raw_affiliation_strings":["Department of Studies in Physics, University of Mysore, Mysore, India"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Department of Studies in Physics, University of Mysore, Mysore, India","institution_ids":["https://openalex.org/I204743663"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5052963574","display_name":"N. B. Pushpa","orcid":"https://orcid.org/0000-0001-6417-5350","observed_orcids":["https://orcid.org/0000-0001-6417-5350"]},"institutions":[],"countries":[],"is_corresponding":false,"raw_author_name":"N. Pushpa","raw_affiliation_strings":["Department of PG Studies in Physics, JSS College, Mysore, India"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Department of PG Studies in Physics, JSS College, Mysore, India","institution_ids":[]}]},{"author_position":"last","author":{"id":"https://openalex.org/A5017941747","display_name":"Ambuj Tripathi","orcid":"https://orcid.org/0000-0002-1240-5836","observed_orcids":["https://orcid.org/0000-0002-1240-5836"]},"institutions":[{"id":"https://openalex.org/I4210089002","display_name":"Inter-University Accelerator Centre","ror":"https://ror.org/0066qbn28","country_code":"IN","type":"facility","lineage":["https://openalex.org/I4210089002"]}],"countries":["IN"],"is_corresponding":false,"raw_author_name":"Ambuj Tripathi","raw_affiliation_strings":["Inter-University Accelerator Centre, New Delhi, India"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Inter-University Accelerator Centre, New Delhi, India","institution_ids":["https://openalex.org/I4210089002"]}]}],"institutions":[],"countries_distinct_count":1,"institutions_distinct_count":2,"corresponding_author_ids":["https://openalex.org/A5102917718"],"corresponding_institution_ids":["https://openalex.org/I204743663"],"apc_list":null,"apc_paid":null,"fwci":0.0957,"has_fulltext":false,"cited_by_count":1,"citation_normalized_percentile":{"value":0.38684438,"is_in_top_1_percent":false,"is_in_top_10_percent":false},"cited_by_percentile_year":{"min":88,"max":93},"biblio":{"volume":"173","issue":"7-8","first_page":"683","last_page":"693"},"is_retracted":false,"is_paratext":false,"is_xpac":false,"primary_topic":{"id":"https://openalex.org/T11005","display_name":"Radiation Effects in Electronics","score":0.9926999807357788,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},"topics":[{"id":"https://openalex.org/T11005","display_name":"Radiation Effects in Electronics","score":0.9926999807357788,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T11044","display_name":"Particle Detector Development and Performance","score":0.0010000000474974513,"subfield":{"id":"https://openalex.org/subfields/3106","display_name":"Nuclear and High Energy Physics"},"field":{"id":"https://openalex.org/fields/31","display_name":"Physics and Astronomy"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T11176","display_name":"Radiation Therapy and Dosimetry","score":0.0005000000237487257,"subfield":{"id":"https://openalex.org/subfields/3108","display_name":"Radiation"},"field":{"id":"https://openalex.org/fields/31","display_name":"Physics and Astronomy"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}}],"keywords":[{"id":"https://openalex.org/keywords/ion-irradiation","display_name":"ion irradiation","score":0.8180000185966492},{"id":"https://openalex.org/keywords/rf-power-transistors","display_name":"RF power transistors","score":0.7440000176429749},{"id":"https://openalex.org/keywords/lithium-ion-irradiation","display_name":"lithium ion irradiation","score":0.8149999976158142},{"id":"https://openalex.org/keywords/carbon-ion-irradiation","display_name":"carbon ion irradiation","score":0.9990000128746033},{"id":"https://openalex.org/keywords/silver-ion-irradiation","display_name":"silver ion irradiation","score":0.996999979019165},{"id":"https://openalex.org/keywords/displacement-damage","display_name":"displacement damage","score":0.7179999947547913},{"id":"https://openalex.org/keywords/current-gain-degradation","display_name":"current gain degradation","score":0.7200000286102295},{"id":"https://openalex.org/keywords/isochronal-annealing","display_name":"isochronal annealing","score":0.8399999737739563},{"id":"https://openalex.org/keywords/radiation-hardening","display_name":"radiation hardening","score":0.6069999933242798},{"id":"https://openalex.org/keywords/60co-gamma-irradiation","display_name":"cobalt-60 gamma rays","score":0.8009999990463257},{"id":"https://openalex.org/keywords/srim-simulation","display_name":"SRIM simulation","score":0.8700000047683716}],"concepts":[{"id":"https://openalex.org/C111337013","wikidata":"https://www.wikidata.org/wiki/Q2737837","display_name":"Irradiation","level":2,"score":0.8637945652008057},{"id":"https://openalex.org/C192562407","wikidata":"https://www.wikidata.org/wiki/Q228736","display_name":"Materials science","level":0,"score":0.7559288740158081},{"id":"https://openalex.org/C172385210","wikidata":"https://www.wikidata.org/wiki/Q5339","display_name":"Transistor","level":3,"score":0.6905908584594727},{"id":"https://openalex.org/C145148216","wikidata":"https://www.wikidata.org/wiki/Q36496","display_name":"Ion","level":2,"score":0.6365951895713806},{"id":"https://openalex.org/C49040817","wikidata":"https://www.wikidata.org/wiki/Q193091","display_name":"Optoelectronics","level":1,"score":0.49404481053352356},{"id":"https://openalex.org/C544956773","wikidata":"https://www.wikidata.org/wiki/Q670","display_name":"Silicon","level":2,"score":0.4872194826602936},{"id":"https://openalex.org/C2777855556","wikidata":"https://www.wikidata.org/wiki/Q4339544","display_name":"Annealing (glass)","level":2,"score":0.43447864055633545},{"id":"https://openalex.org/C113196181","wikidata":"https://www.wikidata.org/wiki/Q485223","display_name":"Analytical Chemistry (journal)","level":2,"score":0.3980485498905182},{"id":"https://openalex.org/C185592680","wikidata":"https://www.wikidata.org/wiki/Q2329","display_name":"Chemistry","level":0,"score":0.19545802474021912},{"id":"https://openalex.org/C119599485","wikidata":"https://www.wikidata.org/wiki/Q43035","display_name":"Electrical engineering","level":1,"score":0.11287611722946167},{"id":"https://openalex.org/C185544564","wikidata":"https://www.wikidata.org/wiki/Q81197","display_name":"Nuclear physics","level":1,"score":0.06770947575569153},{"id":"https://openalex.org/C121332964","wikidata":"https://www.wikidata.org/wiki/Q413","display_name":"Physics","level":0,"score":0.06345972418785095},{"id":"https://openalex.org/C165801399","wikidata":"https://www.wikidata.org/wiki/Q25428","display_name":"Voltage","level":2,"score":0.040966808795928955},{"id":"https://openalex.org/C178790620","wikidata":"https://www.wikidata.org/wiki/Q11351","display_name":"Organic chemistry","level":1,"score":0.0},{"id":"https://openalex.org/C127413603","wikidata":"https://www.wikidata.org/wiki/Q11023","display_name":"Engineering","level":0,"score":0.0},{"id":"https://openalex.org/C159985019","wikidata":"https://www.wikidata.org/wiki/Q181790","display_name":"Composite material","level":1,"score":0.0},{"id":"https://openalex.org/C43617362","wikidata":"https://www.wikidata.org/wiki/Q170050","display_name":"Chromatography","level":1,"score":0.0}],"mesh":[],"locations_count":2,"locations":[{"id":"doi:10.1080/10420150.2018.1499735","doi":"https://doi.org/10.1080/10420150.2018.1499735","is_oa":false,"landing_page_url":"https://doi.org/10.1080/10420150.2018.1499735","pdf_url":null,"source":{"id":"https://openalex.org/S201266914","display_name":"Radiation effects and defects in solids","issn_l":"1026-549X","issn":["1026-549X","1029-4953","1042-0150"],"is_oa":false,"is_in_doaj":false,"is_core":true,"listed_in":["anvur-scientific","cwts-core","dongbi-d","jufo-1","norway-1","poland-40","russia-white-list-3"],"host_organization":"https://openalex.org/P4310320547","host_organization_name":"Taylor & Francis","host_organization_lineage":["https://openalex.org/P4310320547","https://openalex.org/P4310320449"],"host_organization_lineage_names":["Taylor & Francis","Informa"],"type":"journal"},"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"Radiation Effects and Defects in Solids","raw_type":"journal-article"},{"id":"pmh:oai:eprints.uni-mysore.ac.in:5254","doi":null,"is_oa":false,"landing_page_url":"http://eprints.uni-mysore.ac.in/5254/1/The%20effects%20of%20high-energy%20ion%20irradiations.pdf","pdf_url":"http://eprints.uni-mysore.ac.in/5254/1/The%20effects%20of%20high-energy%20ion%20irradiations.pdf","source":{"id":"https://openalex.org/S4306400737","display_name":"MyPrints@UOM (Mysore University Library)","issn_l":null,"issn":null,"is_oa":false,"is_in_doaj":false,"is_core":false,"listed_in":[],"host_organization":"https://openalex.org/I204743663","host_organization_name":"University of Mysore","host_organization_lineage":["https://openalex.org/I204743663"],"host_organization_lineage_names":[],"type":"repository"},"license":null,"license_id":null,"version":"acceptedVersion","is_accepted":true,"is_published":false,"raw_source_name":"","raw_type":"Article"}],"best_oa_location":null,"sustainable_development_goals":[],"study_designs":[],"awards":[],"funders":[{"id":"https://openalex.org/F4320336062","display_name":"Inter-University Accelerator Centre","ror":"https://ror.org/0066qbn28"}],"has_content":{"grobid_xml":false,"pdf":false},"content_urls":null,"referenced_works_count":16,"referenced_works":["https://openalex.org/W1519551438","https://openalex.org/W1978361229","https://openalex.org/W2003362024","https://openalex.org/W2007818042","https://openalex.org/W2031354968","https://openalex.org/W2037036601","https://openalex.org/W2038687917","https://openalex.org/W2072569195","https://openalex.org/W2077950105","https://openalex.org/W2101287830","https://openalex.org/W2124855656","https://openalex.org/W2134727764","https://openalex.org/W2141741891","https://openalex.org/W2168565720","https://openalex.org/W2580754133","https://openalex.org/W2614923693"],"related_works":["https://openalex.org/W2315764988","https://openalex.org/W2001925393","https://openalex.org/W2407244554","https://openalex.org/W2973380660","https://openalex.org/W2038687917","https://openalex.org/W2020974485","https://openalex.org/W2620146645","https://openalex.org/W2003362024","https://openalex.org/W1973200677","https://openalex.org/W2084053258"],"abstract_inverted_index":{"The":[0,35,54,84,117,155,178],"silicon":[1],"NPN":[2],"rf":[3],"power":[4],"transistors":[5,149,166,186],"were":[6,77,88,113,187],"irradiated":[7,165,185],"with":[8,90,152],"different":[9,55,175],"linear":[10],"energy":[11,43],"transfer":[12],"(LET)":[13],"ions":[14,27,49],"such":[15,58],"as":[16,59],"50":[17,193],"MeV":[18,21,25,194,197,206],"Li3+,":[19,195],"80":[20,196],"C6+":[22,147,198],"and":[23,45,74,81,106,111,146,180,200],"150":[24,205],"Ag12+":[26,128,207],"in":[28,50,94,102,109,119,140,174,212],"the":[29,42,51,95,120,138,141,162,172,210],"dose":[30,97],"range":[31,46],"of":[32,47,184],"1\u2013100":[33],"Mrad.":[34],"SRIM":[36],"simulation":[37],"was":[38,123,150,159],"used":[39],"to":[40,133,168,170],"understand":[41],"loss":[44],"these":[48],"transistor":[52,130],"structure.":[53],"electrical":[56,121,142,176,182,213],"parameters":[57,122,143,183],"Gummel":[60],"characteristics,":[61],"excess":[62],"base":[63,103],"current":[64,67,104],"(\u0394IB),":[65],"DC":[66],"gain":[68],"(hFE),":[69],"displacement":[70],"damage":[71],"factor":[72],"(K)":[73],"output":[75],"characteristics":[76,214],"systematically":[78],"studied":[79],"before":[80],"after":[82,115,190],"irradiation.":[83,116],"ion":[85,199],"irradiation":[86,92],"results":[87],"compared":[89,132],"60Co-gamma":[91],"result":[93],"same":[96],"range.":[98],"A":[99],"considerable":[100],"increase":[101],"(IB)":[105],"a":[107],"decrease":[108],"hFE":[110,179],"ICSat":[112],"observed":[114],"degradation":[118,139],"comparably":[124],"very":[125],"high":[126],"for":[127,144,192,204],"ion-irradiated":[129,135,148,208],"when":[131],"other":[134,181],"transistors,":[136,202],"whereas":[137,203],"Li3+":[145],"comparable":[151],"gamma-irradiated":[153],"transistor.":[154],"isochronal":[156],"annealing":[157],"study":[158],"conducted":[160],"on":[161],"100":[163],"Mrad":[164],"up":[167],"500\u00b0C":[169,191],"analyze":[171],"recovery":[173,211],"parameters.":[177],"almost":[188],"recovered":[189],"60Co-gamma-irradiated":[201],"transistor,":[209],"is":[215],"not":[216],"complete.":[217]},"counts_by_year":[{"year":2019,"cited_by_count":1}],"updated_date":"2026-10-14T16:39:01.820549","created_date":"2018-08-03T00:00:00"}