{"id":"https://openalex.org/W2805772654","doi":"https://doi.org/10.1002/sdtp.12483","title":"4\u20103: Solution Synthesis of High\u2010Quality Indium\u2010Nitride Quantum Dots","display_name":"4\u20103: Solution Synthesis of High\u2010Quality Indium\u2010Nitride Quantum Dots","publication_year":2018,"publication_date":"2018-05-01","ids":{"openalex":"https://openalex.org/W2805772654","doi":"https://doi.org/10.1002/sdtp.12483","mag":"2805772654"},"language":"en","primary_location":{"id":"doi:10.1002/sdtp.12483","doi":"https://doi.org/10.1002/sdtp.12483","is_oa":false,"landing_page_url":"https://doi.org/10.1002/sdtp.12483","pdf_url":null,"source":{"id":"https://openalex.org/S4210171700","display_name":"SID Symposium Digest of Technical Papers","issn_l":"0097-966X","issn":["0097-966X","2154-6738","2154-6746","2168-0159"],"is_oa":false,"is_in_doaj":false,"is_core":true,"listed_in":["cwts-core"],"host_organization":"https://openalex.org/P4310320595","host_organization_name":"Wiley","host_organization_lineage":["https://openalex.org/P4310320595"],"host_organization_lineage_names":["Wiley"],"type":"journal"},"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"SID Symposium Digest of Technical Papers","raw_type":"journal-article"},"volume":null,"type":"conference-paper","is_traditional":true,"indexed_in":["crossref"],"open_access":{"is_oa":false,"oa_status":"closed","oa_url":null,"any_repository_has_fulltext":false},"authorships":[{"author_position":"first","author":{"id":"https://openalex.org/A5013511427","display_name":"Junki Nagakubo","orcid":"https://orcid.org/0000-0003-1775-4725","observed_orcids":["https://orcid.org/0000-0003-1775-4725"]},"institutions":[{"id":"https://openalex.org/I4210125446","display_name":"Ulvac (Japan)","ror":"https://ror.org/02xnwme44","country_code":"JP","type":"company","lineage":["https://openalex.org/I4210125446"]}],"countries":["JP"],"is_corresponding":false,"raw_author_name":"Junki Nagakubo","raw_affiliation_strings":["ULVAC, Inc., Ibaraki, Japan"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"ULVAC, Inc., Ibaraki, Japan","institution_ids":["https://openalex.org/I4210125446"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5110439312","display_name":"Masaaki Hirakawa","orcid":null,"observed_orcids":[]},"institutions":[{"id":"https://openalex.org/I4210125446","display_name":"Ulvac (Japan)","ror":"https://ror.org/02xnwme44","country_code":"JP","type":"company","lineage":["https://openalex.org/I4210125446"]}],"countries":["JP"],"is_corresponding":false,"raw_author_name":"Masaaki Hirakawa","raw_affiliation_strings":["ULVAC, Inc., Ibaraki, Japan"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"ULVAC, Inc., Ibaraki, Japan","institution_ids":["https://openalex.org/I4210125446"]}]},{"author_position":"middle","author":{"id":null,"display_name":"Takahiro Sawada","orcid":null,"observed_orcids":[]},"institutions":[{"id":"https://openalex.org/I4210125446","display_name":"Ulvac (Japan)","ror":"https://ror.org/02xnwme44","country_code":"JP","type":"company","lineage":["https://openalex.org/I4210125446"]}],"countries":["JP"],"is_corresponding":false,"raw_author_name":"Takahiro Sawada","raw_affiliation_strings":["ULVAC, Inc., Ibaraki, Japan"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"ULVAC, Inc., Ibaraki, Japan","institution_ids":["https://openalex.org/I4210125446"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5068040909","display_name":"Tsutomu Nishihashi","orcid":null,"observed_orcids":[]},"institutions":[{"id":"https://openalex.org/I4210125446","display_name":"Ulvac (Japan)","ror":"https://ror.org/02xnwme44","country_code":"JP","type":"company","lineage":["https://openalex.org/I4210125446"]}],"countries":["JP"],"is_corresponding":false,"raw_author_name":"Tsutomu Nishihashi","raw_affiliation_strings":["ULVAC, Inc., Ibaraki, Japan"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"ULVAC, Inc., Ibaraki, Japan","institution_ids":["https://openalex.org/I4210125446"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5053812134","display_name":"Kazumasa Horita","orcid":null,"observed_orcids":[]},"institutions":[{"id":"https://openalex.org/I4210125446","display_name":"Ulvac (Japan)","ror":"https://ror.org/02xnwme44","country_code":"JP","type":"company","lineage":["https://openalex.org/I4210125446"]}],"countries":["JP"],"is_corresponding":false,"raw_author_name":"Kazumasa Horita","raw_affiliation_strings":["ULVAC, Inc., Ibaraki, Japan"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"ULVAC, Inc., Ibaraki, Japan","institution_ids":["https://openalex.org/I4210125446"]}]},{"author_position":"last","author":{"id":"https://openalex.org/A5102347263","display_name":"Hirohiko Murakami","orcid":null,"observed_orcids":[]},"institutions":[{"id":"https://openalex.org/I4210125446","display_name":"Ulvac (Japan)","ror":"https://ror.org/02xnwme44","country_code":"JP","type":"company","lineage":["https://openalex.org/I4210125446"]}],"countries":["JP"],"is_corresponding":false,"raw_author_name":"Hirohiko Murakami","raw_affiliation_strings":["ULVAC, Inc., Ibaraki, Japan"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"ULVAC, Inc., Ibaraki, Japan","institution_ids":["https://openalex.org/I4210125446"]}]}],"institutions":[],"countries_distinct_count":1,"institutions_distinct_count":1,"corresponding_author_ids":[],"corresponding_institution_ids":["https://openalex.org/I4210125446"],"apc_list":null,"apc_paid":null,"fwci":0.7097,"has_fulltext":false,"cited_by_count":2,"citation_normalized_percentile":{"value":0.67631404,"is_in_top_1_percent":false,"is_in_top_10_percent":false},"cited_by_percentile_year":{"min":88,"max":93},"biblio":{"volume":"49","issue":"1","first_page":"28","last_page":"31"},"is_retracted":false,"is_paratext":false,"is_xpac":false,"primary_topic":{"id":"https://openalex.org/T10099","display_name":"GaN-based semiconductor devices and materials","score":0.9765999913215637,"subfield":{"id":"https://openalex.org/subfields/3104","display_name":"Condensed Matter Physics"},"field":{"id":"https://openalex.org/fields/31","display_name":"Physics and Astronomy"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},"topics":[{"id":"https://openalex.org/T10099","display_name":"GaN-based semiconductor devices and materials","score":0.9765999913215637,"subfield":{"id":"https://openalex.org/subfields/3104","display_name":"Condensed Matter Physics"},"field":{"id":"https://openalex.org/fields/31","display_name":"Physics and Astronomy"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T10321","display_name":"Quantum Dots Synthesis And Properties","score":0.0210999995470047,"subfield":{"id":"https://openalex.org/subfields/2505","display_name":"Materials Chemistry"},"field":{"id":"https://openalex.org/fields/25","display_name":"Materials Science"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T10097","display_name":"Luminescence Properties of Advanced Materials","score":0.0007999999797903001,"subfield":{"id":"https://openalex.org/subfields/2505","display_name":"Materials Chemistry"},"field":{"id":"https://openalex.org/fields/25","display_name":"Materials Science"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}}],"keywords":[{"id":"https://openalex.org/keywords/wet-chemical-synthesis","display_name":"wet chemical synthesis","score":0.8240000009536743},{"id":"https://openalex.org/keywords/colloidal-quantum-dots","display_name":"colloidal quantum dots","score":0.8169999718666077},{"id":"https://openalex.org/keywords/photoluminescence","display_name":"photoluminescence","score":0.9129999876022339},{"id":"https://openalex.org/keywords/nanocrystal-synthesis","display_name":"nanocrystal synthesis","score":0.6129999756813049}],"concepts":[{"id":"https://openalex.org/C124657808","wikidata":"https://www.wikidata.org/wiki/Q1133068","display_name":"Quantum dot","level":2,"score":0.8607791662216187},{"id":"https://openalex.org/C543292547","wikidata":"https://www.wikidata.org/wiki/Q1094","display_name":"Indium","level":2,"score":0.858350932598114},{"id":"https://openalex.org/C175854130","wikidata":"https://www.wikidata.org/wiki/Q98276914","display_name":"Nanocrystal","level":2,"score":0.8359490036964417},{"id":"https://openalex.org/C2777081994","wikidata":"https://www.wikidata.org/wiki/Q418616","display_name":"Indium nitride","level":4,"score":0.8170826435089111},{"id":"https://openalex.org/C85080765","wikidata":"https://www.wikidata.org/wiki/Q614893","display_name":"Photoluminescence","level":2,"score":0.7265661954879761},{"id":"https://openalex.org/C194760766","wikidata":"https://www.wikidata.org/wiki/Q410851","display_name":"Nitride","level":3,"score":0.7135431170463562},{"id":"https://openalex.org/C192562407","wikidata":"https://www.wikidata.org/wiki/Q228736","display_name":"Materials science","level":0,"score":0.6766505837440491},{"id":"https://openalex.org/C171250308","wikidata":"https://www.wikidata.org/wiki/Q11468","display_name":"Nanotechnology","level":1,"score":0.5496892333030701},{"id":"https://openalex.org/C155672457","wikidata":"https://www.wikidata.org/wiki/Q61231","display_name":"Nanoparticle","level":2,"score":0.5454100966453552},{"id":"https://openalex.org/C2779530757","wikidata":"https://www.wikidata.org/wiki/Q1207505","display_name":"Quality (philosophy)","level":2,"score":0.41304612159729004},{"id":"https://openalex.org/C49040817","wikidata":"https://www.wikidata.org/wiki/Q193091","display_name":"Optoelectronics","level":1,"score":0.3981340229511261},{"id":"https://openalex.org/C121332964","wikidata":"https://www.wikidata.org/wiki/Q413","display_name":"Physics","level":0,"score":0.08869746327400208},{"id":"https://openalex.org/C62520636","wikidata":"https://www.wikidata.org/wiki/Q944","display_name":"Quantum mechanics","level":1,"score":0.05181241035461426},{"id":"https://openalex.org/C2779227376","wikidata":"https://www.wikidata.org/wiki/Q6505497","display_name":"Layer (electronics)","level":2,"score":0.0}],"mesh":[],"locations_count":1,"locations":[{"id":"doi:10.1002/sdtp.12483","doi":"https://doi.org/10.1002/sdtp.12483","is_oa":false,"landing_page_url":"https://doi.org/10.1002/sdtp.12483","pdf_url":null,"source":{"id":"https://openalex.org/S4210171700","display_name":"SID Symposium Digest of Technical Papers","issn_l":"0097-966X","issn":["0097-966X","2154-6738","2154-6746","2168-0159"],"is_oa":false,"is_in_doaj":false,"is_core":true,"listed_in":["cwts-core"],"host_organization":"https://openalex.org/P4310320595","host_organization_name":"Wiley","host_organization_lineage":["https://openalex.org/P4310320595"],"host_organization_lineage_names":["Wiley"],"type":"journal"},"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"SID Symposium Digest of Technical Papers","raw_type":"journal-article"}],"best_oa_location":null,"sustainable_development_goals":[],"study_designs":[],"awards":[],"funders":[],"has_content":{"pdf":false,"grobid_xml":false},"content_urls":null,"referenced_works_count":16,"referenced_works":["https://openalex.org/W1976427806","https://openalex.org/W1976765993","https://openalex.org/W2026198534","https://openalex.org/W2074943171","https://openalex.org/W2084869532","https://openalex.org/W2085548221","https://openalex.org/W2095845055","https://openalex.org/W2138463916","https://openalex.org/W2141017103","https://openalex.org/W2160743259","https://openalex.org/W2163013760","https://openalex.org/W2314692321","https://openalex.org/W2501149251","https://openalex.org/W2525989524","https://openalex.org/W2607098563","https://openalex.org/W2621223899"],"related_works":["https://openalex.org/W2998019434","https://openalex.org/W3173783452","https://openalex.org/W4363646784","https://openalex.org/W2795586617","https://openalex.org/W2884830140","https://openalex.org/W7100636385","https://openalex.org/W2806684765","https://openalex.org/W3040076197","https://openalex.org/W2888340952","https://openalex.org/W1988217210"],"abstract_inverted_index":{"Group":[0],"III\u2010nitride":[1],"nanocrystals":[2],"are":[3],"promising":[4],"candidates":[5],"for":[6],"lighting":[7],"applications.":[8],"However,":[9],"development":[10],"of":[11,21,26,40,58,66],"their":[12],"colloidal":[13],"quantum":[14],"dots":[15],"(QDs)":[16],"has":[17],"not":[18],"progressed":[19],"because":[20],"issues":[22],"with":[23],"the":[24,33,38,59,64,81],"synthesis":[25],"indium":[27,41],"nitride":[28],"(InN)":[29],"nanoparticles,":[30],"such":[31],"as":[32,43],"long":[34],"reaction":[35],"time":[36],"and":[37,62,76],"generation":[39],"metal":[42],"a":[44,49],"by\u2010product.":[45],"Here,":[46],"we":[47,71],"propose":[48],"new":[50],"synthetic":[51],"method":[52,83],"that":[53,73],"can":[54],"solve":[55],"almost":[56],"all":[57],"above":[60],"problems":[61],"improve":[63],"quality":[65],"InN":[67],"nanocrystals.":[68],"In":[69],"addition,":[70],"demonstrate":[72],"Ga\u2014In\u2014N":[74],"QDs":[75,78],"Zn\u2014In\u2014N":[77],"synthesized":[79],"using":[80],"proposed":[82],"exhibit":[84],"photoluminescence.":[85]},"counts_by_year":[{"year":2023,"cited_by_count":1},{"year":2018,"cited_by_count":1}],"updated_date":"2026-10-30T12:39:25.321706","created_date":"2018-06-13T00:00:00"}
