{"id":"https://openalex.org/W2805614760","doi":"https://doi.org/10.1149/ma2018-01/7/706","title":"(Invited) Self-Aligned Short-Channel Heterojunction Diodes and Transistors Based on Carbon Nanotubes and Related Nanoelectronic Materials","display_name":"(Invited) Self-Aligned Short-Channel Heterojunction Diodes and Transistors Based on Carbon Nanotubes and Related Nanoelectronic Materials","publication_year":2018,"publication_date":"2018-04-13","ids":{"openalex":"https://openalex.org/W2805614760","doi":"https://doi.org/10.1149/ma2018-01/7/706","mag":"2805614760"},"language":"en","primary_location":{"id":"doi:10.1149/ma2018-01/7/706","doi":"https://doi.org/10.1149/ma2018-01/7/706","is_oa":false,"landing_page_url":"https://doi.org/10.1149/ma2018-01/7/706","pdf_url":null,"source":{"id":"https://openalex.org/S4210168594","display_name":"ECS Meeting Abstracts","issn_l":"1091-8213","issn":["1091-8213","2151-2035","2151-2043","2152-8365"],"is_oa":false,"is_in_doaj":false,"is_core":false,"listed_in":[],"host_organization":"https://openalex.org/P4310311669","host_organization_name":"Institute of Physics","host_organization_lineage":["https://openalex.org/P4310311669"],"host_organization_lineage_names":["Institute of Physics"],"type":"journal"},"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"ECS Meeting Abstracts","raw_type":"journal-article"},"volume":null,"type":"conference-abstract","indexed_in":["crossref"],"open_access":{"is_oa":false,"oa_status":"closed","oa_url":null,"any_repository_has_fulltext":false},"authorships":[{"author_position":"first","author":{"id":"https://openalex.org/A5020649130","display_name":"Mark C. Hersam","orcid":"https://orcid.org/0000-0003-4120-1426","observed_orcids":["https://orcid.org/0000-0003-4120-1426"]},"institutions":[{"id":"https://openalex.org/I111979921","display_name":"Northwestern University","ror":"https://ror.org/000e0be47","country_code":"US","type":"education","lineage":["https://openalex.org/I111979921"]}],"countries":["US"],"is_corresponding":true,"raw_author_name":"Mark C. Hersam","raw_affiliation_strings":["Northwestern University"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Northwestern University","institution_ids":["https://openalex.org/I111979921"]}]}],"institutions":[],"countries_distinct_count":1,"institutions_distinct_count":1,"corresponding_author_ids":["https://openalex.org/A5020649130"],"corresponding_institution_ids":["https://openalex.org/I111979921"],"apc_list":null,"apc_paid":null,"fwci":null,"has_fulltext":false,"cited_by_count":0,"citation_normalized_percentile":null,"cited_by_percentile_year":null,"biblio":{"volume":"MA2018-01","issue":"7","first_page":"706","last_page":"706"},"is_retracted":false,"is_paratext":false,"is_xpac":false,"primary_topic":{"id":"https://openalex.org/T10275","display_name":"2D Materials and Applications","score":0.9707000255584717,"subfield":{"id":"https://openalex.org/subfields/2505","display_name":"Materials Chemistry"},"field":{"id":"https://openalex.org/fields/25","display_name":"Materials Science"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},"topics":[{"id":"https://openalex.org/T10275","display_name":"2D Materials and Applications","score":0.9707000255584717,"subfield":{"id":"https://openalex.org/subfields/2505","display_name":"Materials Chemistry"},"field":{"id":"https://openalex.org/fields/25","display_name":"Materials Science"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T10083","display_name":"Graphene research and applications","score":0.01590000092983246,"subfield":{"id":"https://openalex.org/subfields/2505","display_name":"Materials Chemistry"},"field":{"id":"https://openalex.org/fields/25","display_name":"Materials Science"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T10558","display_name":"Advancements in Semiconductor Devices and Circuit Design","score":0.01119999960064888,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}}],"keywords":[{"id":"https://openalex.org/keywords/self-aligned-fabrication","display_name":"self-aligned fabrication","score":0.972000002861023},{"id":"https://openalex.org/keywords/short-channel-effects","display_name":"short-channel effects","score":0.6790000200271606},{"id":"https://openalex.org/keywords/van-der-waals-heterostructures","display_name":"van der Waals heterostructures","score":0.8999999761581421},{"id":"https://openalex.org/keywords/carbon-nanotubes","display_name":"carbon nanotubes","score":0.8849999904632568},{"id":"https://openalex.org/keywords/semiconducting-carbon-nanotubes","display_name":"semiconducting carbon nanotubes","score":0.8709999918937683},{"id":"https://openalex.org/keywords/monolayer-mos2","display_name":"monolayer MoS2","score":0.9380000233650208},{"id":"https://openalex.org/keywords/field-effect-transistors","display_name":"field-effect transistors","score":0.9789999723434448},{"id":"https://openalex.org/keywords/current-saturation","display_name":"current saturation","score":0.7739999890327454}],"concepts":[{"id":"https://openalex.org/C192562407","wikidata":"https://www.wikidata.org/wiki/Q228736","display_name":"Materials science","level":0,"score":0.7426862716674805},{"id":"https://openalex.org/C79794668","wikidata":"https://www.wikidata.org/wiki/Q1616270","display_name":"Heterojunction","level":2,"score":0.6579714417457581},{"id":"https://openalex.org/C171250308","wikidata":"https://www.wikidata.org/wiki/Q11468","display_name":"Nanotechnology","level":1,"score":0.5821324586868286},{"id":"https://openalex.org/C513720949","wikidata":"https://www.wikidata.org/wiki/Q1778729","display_name":"Carbon nanotube","level":2,"score":0.5673776865005493},{"id":"https://openalex.org/C172385210","wikidata":"https://www.wikidata.org/wiki/Q5339","display_name":"Transistor","level":3,"score":0.5435651540756226},{"id":"https://openalex.org/C49040817","wikidata":"https://www.wikidata.org/wiki/Q193091","display_name":"Optoelectronics","level":1,"score":0.5377993583679199},{"id":"https://openalex.org/C187937830","wikidata":"https://www.wikidata.org/wiki/Q175403","display_name":"Microelectronics","level":2,"score":0.5211841464042664},{"id":"https://openalex.org/C136525101","wikidata":"https://www.wikidata.org/wiki/Q5428139","display_name":"Fabrication","level":3,"score":0.4553069472312927},{"id":"https://openalex.org/C141400236","wikidata":"https://www.wikidata.org/wiki/Q1479544","display_name":"Nanoelectronics","level":2,"score":0.43626973032951355},{"id":"https://openalex.org/C145598152","wikidata":"https://www.wikidata.org/wiki/Q176097","display_name":"Field-effect transistor","level":4,"score":0.42669856548309326},{"id":"https://openalex.org/C165801399","wikidata":"https://www.wikidata.org/wiki/Q25428","display_name":"Voltage","level":2,"score":0.18062138557434082},{"id":"https://openalex.org/C119599485","wikidata":"https://www.wikidata.org/wiki/Q43035","display_name":"Electrical engineering","level":1,"score":0.16313517093658447},{"id":"https://openalex.org/C204787440","wikidata":"https://www.wikidata.org/wiki/Q188504","display_name":"Alternative medicine","level":2,"score":0.0},{"id":"https://openalex.org/C71924100","wikidata":"https://www.wikidata.org/wiki/Q11190","display_name":"Medicine","level":0,"score":0.0},{"id":"https://openalex.org/C127413603","wikidata":"https://www.wikidata.org/wiki/Q11023","display_name":"Engineering","level":0,"score":0.0},{"id":"https://openalex.org/C142724271","wikidata":"https://www.wikidata.org/wiki/Q7208","display_name":"Pathology","level":1,"score":0.0}],"mesh":[],"locations_count":1,"locations":[{"id":"doi:10.1149/ma2018-01/7/706","doi":"https://doi.org/10.1149/ma2018-01/7/706","is_oa":false,"landing_page_url":"https://doi.org/10.1149/ma2018-01/7/706","pdf_url":null,"source":{"id":"https://openalex.org/S4210168594","display_name":"ECS Meeting Abstracts","issn_l":"1091-8213","issn":["1091-8213","2151-2035","2151-2043","2152-8365"],"is_oa":false,"is_in_doaj":false,"is_core":false,"listed_in":[],"host_organization":"https://openalex.org/P4310311669","host_organization_name":"Institute of Physics","host_organization_lineage":["https://openalex.org/P4310311669"],"host_organization_lineage_names":["Institute of Physics"],"type":"journal"},"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"ECS Meeting Abstracts","raw_type":"journal-article"}],"best_oa_location":null,"sustainable_development_goals":[],"sustainable_development_goals_aurora":[],"study_designs":[],"awards":[],"funders":[],"has_content":{"pdf":false,"grobid_xml":false},"content_urls":null,"referenced_works_count":0,"referenced_works":[],"related_works":["https://openalex.org/W2786443440","https://openalex.org/W2068050578","https://openalex.org/W4412981367","https://openalex.org/W2014023663","https://openalex.org/W2016163710","https://openalex.org/W2748400030","https://openalex.org/W4403136211","https://openalex.org/W2161666658","https://openalex.org/W2022084089","https://openalex.org/W7095512363"],"abstract_inverted_index":{"Parallel":[0],"self-aligned":[1,74,79,116,145],"fabrication":[2],"methods":[3],"in":[4,19,57,126,160],"modern":[5],"silicon-based":[6],"microelectronics":[7],"have":[8,36,69],"enabled":[9],"sub-lithographic":[10],"registration":[11],"between":[12],"processing":[13,80],"steps,":[14],"ultimately":[15],"facilitating":[16],"substantial":[17],"advances":[18],"circuit":[20],"complexity":[21],"over":[22],"the":[23,84,123,129,139],"past":[24],"few":[25],"decades.":[26],"In":[27,112],"contrast,":[28],"while":[29,132],"carbon":[30,107],"nanotubes":[31,108],"and":[32,42,52,99,109,156],"related":[33],"nanoelectronic":[34,67,154],"materials":[35,68,155],"shown":[37],"significant":[38],"potential":[39],"for":[40],"digital":[41],"analog":[43],"electronics":[44],"due":[45],"to":[46,174],"their":[47],"high":[48],"mobilities,":[49],"ultrathin":[50],"geometry,":[51],"broad":[53],"range":[54,152,178],"of":[55,86,122,128,138,153,179],"permutations":[56],"van":[58],"der":[59],"Waals":[60],"(vdW)":[61],"heterojunctions,":[62,114],"devices":[63],"based":[64],"on":[65],"vdW":[66,113,180],"not":[70],"fully":[71],"exploited":[72],"parallel":[73,161],"fabrication.":[75],"Here,":[76],"introduce":[77],"a":[78,150,176],"methodology":[81,146],"that":[82],"enables":[83],"realization":[85],"field-effect":[87],"transistors":[88],"with":[89,95,105,149],"channel":[90],"lengths":[91],"below":[92],"150":[93],"nm":[94],"minimal":[96],"short-channel":[97,140],"effects":[98],"improved":[100],"current":[101],"saturation,":[102],"as":[103],"demonstrated":[104],"semiconducting":[106],"monolayer":[110],"MoS2.":[111],"this":[115,144],"approach":[117],"allows":[118],"dual-gate":[119],"electrostatic":[120],"control":[121,137],"carrier":[124],"density":[125],"both":[127],"constituent":[130],"semiconductors":[131],"concurrently":[133],"achieving":[134],"independent":[135],"gate":[136],"series":[141],"transistors.":[142],"Since":[143],"is":[147,172],"compatible":[148],"diverse":[151],"can":[157],"be":[158],"implemented":[159],"via":[162],"large-area":[163],"lithographic":[164],"processes":[165],"without":[166],"sacrificing":[167],"lateral":[168],"spatial":[169],"resolution,":[170],"it":[171],"likely":[173],"impact":[175],"wide":[177],"heterojunction":[181],"devices.":[182]},"counts_by_year":[],"updated_date":"2026-10-01T08:54:57.152042","created_date":"2018-06-13T00:00:00"}