{"id":"https://openalex.org/W2804977928","doi":"https://doi.org/10.1088/1361-6463/aac562","title":"Electronic properties of graphene/p-silicon Schottky junction","display_name":"Electronic properties of graphene/p-silicon Schottky junction","publication_year":2018,"publication_date":"2018-05-16","ids":{"openalex":"https://openalex.org/W2804977928","doi":"https://doi.org/10.1088/1361-6463/aac562","mag":"2804977928"},"language":"en","primary_location":{"id":"doi:10.1088/1361-6463/aac562","doi":"https://doi.org/10.1088/1361-6463/aac562","is_oa":true,"landing_page_url":"https://doi.org/10.1088/1361-6463/aac562","pdf_url":"https://iopscience.iop.org/article/10.1088/1361-6463/aac562/pdf","source":{"id":"https://openalex.org/S111927887","display_name":"Journal of Physics D Applied Physics","issn_l":"0022-3727","issn":["0022-3727","1361-6463"],"is_oa":false,"is_in_doaj":false,"is_core":true,"listed_in":["anvur-scientific","cwts-core","dongbi-d","jufo-1","ki-jl-1","norway-1","poland-70","russia-white-list-1","vabb-shw"],"host_organization":"https://openalex.org/P4310311669","host_organization_name":"Institute of Physics","host_organization_lineage":["https://openalex.org/P4310311669"],"host_organization_lineage_names":["Institute of Physics"],"type":"journal"},"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"Journal of Physics D: Applied Physics","raw_type":"journal-article"},"volume":null,"type":"article","is_traditional":true,"indexed_in":["crossref"],"open_access":{"is_oa":true,"oa_status":"bronze","oa_url":"https://iopscience.iop.org/article/10.1088/1361-6463/aac562/pdf","any_repository_has_fulltext":false},"authorships":[{"author_position":"first","author":{"id":"https://openalex.org/A5042149283","display_name":"Giuseppe Luongo","orcid":"https://orcid.org/0000-0002-9071-2647","observed_orcids":["https://orcid.org/0000-0002-9071-2647"]},"institutions":[{"id":"https://openalex.org/I131729948","display_name":"University of Salerno","ror":"https://ror.org/0192m2k53","country_code":"IT","type":"education","lineage":["https://openalex.org/I131729948"]}],"countries":["IT"],"is_corresponding":false,"raw_author_name":"Giuseppe Luongo","raw_affiliation_strings":["CNR-SPIN Salerno, via Giovanni Paolo II n. 132, 84084 Fisciano, Italy","Physics Department, University of Salerno, via Giovanni Paolo II n. 132, 84084 Fisciano, Salerno, Italy"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"CNR-SPIN Salerno, via Giovanni Paolo II n. 132, 84084 Fisciano, Italy","institution_ids":[]},{"raw_affiliation_string":"Physics Department, University of Salerno, via Giovanni Paolo II n. 132, 84084 Fisciano, Salerno, Italy","institution_ids":["https://openalex.org/I131729948"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5100654747","display_name":"Antonio Di Bartolomeo","orcid":"https://orcid.org/0000-0002-3629-726X","observed_orcids":["https://orcid.org/0000-0002-3629-726X"]},"institutions":[{"id":"https://openalex.org/I131729948","display_name":"University of Salerno","ror":"https://ror.org/0192m2k53","country_code":"IT","type":"education","lineage":["https://openalex.org/I131729948"]}],"countries":["IT"],"is_corresponding":true,"raw_author_name":"Antonio Di Bartolomeo","raw_affiliation_strings":["CNR-SPIN Salerno, via Giovanni Paolo II n. 132, 84084 Fisciano, Italy","Physics Department, University of Salerno, via Giovanni Paolo II n. 132, 84084 Fisciano, Salerno, Italy"],"raw_orcid":"https://orcid.org/0000-0002-3629-726X","affiliations":[{"raw_affiliation_string":"CNR-SPIN Salerno, via Giovanni Paolo II n. 132, 84084 Fisciano, Italy","institution_ids":[]},{"raw_affiliation_string":"Physics Department, University of Salerno, via Giovanni Paolo II n. 132, 84084 Fisciano, Salerno, Italy","institution_ids":["https://openalex.org/I131729948"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5019547764","display_name":"Filippo Giubileo","orcid":"https://orcid.org/0000-0003-2233-3810","observed_orcids":["https://orcid.org/0000-0003-2233-3810"]},"institutions":[],"countries":[],"is_corresponding":false,"raw_author_name":"Filippo Giubileo","raw_affiliation_strings":["CNR-SPIN Salerno, via Giovanni Paolo II n. 132, 84084 Fisciano, Italy"],"raw_orcid":"https://orcid.org/0000-0003-2233-3810","affiliations":[{"raw_affiliation_string":"CNR-SPIN Salerno, via Giovanni Paolo II n. 132, 84084 Fisciano, Italy","institution_ids":[]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5069260605","display_name":"Carlos Alvarado Chavarin","orcid":"https://orcid.org/0000-0002-4074-8123","observed_orcids":["https://orcid.org/0000-0002-4074-8123"]},"institutions":[{"id":"https://openalex.org/I92894754","display_name":"Leibniz Institute for High Performance Microelectronics","ror":"https://ror.org/0489gab80","country_code":"DE","type":"facility","lineage":["https://openalex.org/I315704651","https://openalex.org/I92894754"]}],"countries":["DE"],"is_corresponding":false,"raw_author_name":"Carlos Alvarado Chavarin","raw_affiliation_strings":["IHP, Im Technologiepark 25, 15236 Frankfurt (Oder), Germany"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"IHP, Im Technologiepark 25, 15236 Frankfurt (Oder), Germany","institution_ids":["https://openalex.org/I92894754"]}]},{"author_position":"last","author":{"id":"https://openalex.org/A5066336061","display_name":"Christian Wenger","orcid":"https://orcid.org/0000-0003-3698-2635","observed_orcids":["https://orcid.org/0000-0003-3698-2635"]},"institutions":[{"id":"https://openalex.org/I4210145679","display_name":"Medizinische Hochschule Brandenburg Theodor Fontane","ror":"https://ror.org/04839sh14","country_code":"DE","type":"education","lineage":["https://openalex.org/I4210145679"]},{"id":"https://openalex.org/I92894754","display_name":"Leibniz Institute for High Performance Microelectronics","ror":"https://ror.org/0489gab80","country_code":"DE","type":"facility","lineage":["https://openalex.org/I315704651","https://openalex.org/I92894754"]}],"countries":["DE"],"is_corresponding":false,"raw_author_name":"Christian Wenger","raw_affiliation_strings":["Brandenburg Medical School Theodor Fontane, 16816 Neuruppin, Germany","IHP, Im Technologiepark 25, 15236 Frankfurt (Oder), Germany"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Brandenburg Medical School Theodor Fontane, 16816 Neuruppin, Germany","institution_ids":["https://openalex.org/I4210145679"]},{"raw_affiliation_string":"IHP, Im Technologiepark 25, 15236 Frankfurt (Oder), Germany","institution_ids":["https://openalex.org/I92894754"]}]}],"institutions":[],"countries_distinct_count":2,"institutions_distinct_count":3,"corresponding_author_ids":["https://openalex.org/A5100654747"],"corresponding_institution_ids":["https://openalex.org/I131729948"],"apc_list":{"value":3325,"currency":"USD","value_usd":3325},"apc_paid":null,"fwci":3.4762,"has_fulltext":true,"cited_by_count":87,"citation_normalized_percentile":{"value":0.94075491,"is_in_top_1_percent":false,"is_in_top_10_percent":true},"cited_by_percentile_year":{"min":97,"max":99},"biblio":{"volume":"51","issue":"25","first_page":"255305","last_page":"255305"},"is_retracted":false,"is_paratext":false,"is_xpac":false,"primary_topic":{"id":"https://openalex.org/T11853","display_name":"Semiconductor materials and interfaces","score":0.9189000129699707,"subfield":{"id":"https://openalex.org/subfields/2504","display_name":"Electronic, Optical and Magnetic Materials"},"field":{"id":"https://openalex.org/fields/25","display_name":"Materials Science"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},"topics":[{"id":"https://openalex.org/T11853","display_name":"Semiconductor materials and interfaces","score":0.9189000129699707,"subfield":{"id":"https://openalex.org/subfields/2504","display_name":"Electronic, Optical and Magnetic Materials"},"field":{"id":"https://openalex.org/fields/25","display_name":"Materials Science"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T10083","display_name":"Graphene research and applications","score":0.06599999964237213,"subfield":{"id":"https://openalex.org/subfields/2505","display_name":"Materials Chemistry"},"field":{"id":"https://openalex.org/fields/25","display_name":"Materials Science"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T10275","display_name":"2D Materials and Applications","score":0.0017999999690800905,"subfield":{"id":"https://openalex.org/subfields/2505","display_name":"Materials Chemistry"},"field":{"id":"https://openalex.org/fields/25","display_name":"Materials Science"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}}],"keywords":[{"id":"https://openalex.org/keywords/schottky-contacts","display_name":"Schottky contacts","score":0.9160000085830688},{"id":"https://openalex.org/keywords/schottky-barrier-height","display_name":"Schottky barrier height","score":0.9419999718666077},{"id":"https://openalex.org/keywords/ideality-factor","display_name":"ideality factor","score":0.8309999704360962},{"id":"https://openalex.org/keywords/thermionic-emission-theory","display_name":"thermionic emission theory","score":0.8450000286102295},{"id":"https://openalex.org/keywords/current-voltage-characteristics","display_name":"current-voltage characteristics","score":0.7070000171661377},{"id":"https://openalex.org/keywords/temperature-dependence","display_name":"temperature dependence","score":0.7789999842643738},{"id":"https://openalex.org/keywords/band-model","display_name":"band model","score":0.796999990940094}],"concepts":[{"id":"https://openalex.org/C143979616","wikidata":"https://www.wikidata.org/wiki/Q215259","display_name":"Thermionic emission","level":3,"score":0.8855336904525757},{"id":"https://openalex.org/C205200001","wikidata":"https://www.wikidata.org/wiki/Q176066","display_name":"Schottky diode","level":3,"score":0.7697510719299316},{"id":"https://openalex.org/C16115445","wikidata":"https://www.wikidata.org/wiki/Q2391942","display_name":"Schottky barrier","level":3,"score":0.744436502456665},{"id":"https://openalex.org/C192562407","wikidata":"https://www.wikidata.org/wiki/Q228736","display_name":"Materials science","level":0,"score":0.6922999620437622},{"id":"https://openalex.org/C30080830","wikidata":"https://www.wikidata.org/wiki/Q169917","display_name":"Graphene","level":2,"score":0.6724165678024292},{"id":"https://openalex.org/C50942859","wikidata":"https://www.wikidata.org/wiki/Q4967193","display_name":"Rectification","level":3,"score":0.6654003262519836},{"id":"https://openalex.org/C49040817","wikidata":"https://www.wikidata.org/wiki/Q193091","display_name":"Optoelectronics","level":1,"score":0.638573169708252},{"id":"https://openalex.org/C544956773","wikidata":"https://www.wikidata.org/wiki/Q670","display_name":"Silicon","level":2,"score":0.5957348942756653},{"id":"https://openalex.org/C79794668","wikidata":"https://www.wikidata.org/wiki/Q1616270","display_name":"Heterojunction","level":2,"score":0.5802400708198547},{"id":"https://openalex.org/C2777289219","wikidata":"https://www.wikidata.org/wiki/Q7632154","display_name":"Substrate (aquarium)","level":2,"score":0.5302664041519165},{"id":"https://openalex.org/C57863236","wikidata":"https://www.wikidata.org/wiki/Q1130571","display_name":"Doping","level":2,"score":0.5281016230583191},{"id":"https://openalex.org/C39353612","wikidata":"https://www.wikidata.org/wiki/Q5283759","display_name":"Atmospheric temperature range","level":2,"score":0.4828946590423584},{"id":"https://openalex.org/C26873012","wikidata":"https://www.wikidata.org/wiki/Q214781","display_name":"Condensed matter physics","level":1,"score":0.45610764622688293},{"id":"https://openalex.org/C5667319","wikidata":"https://www.wikidata.org/wiki/Q1924839","display_name":"Metal\u2013semiconductor junction","level":4,"score":0.4454192817211151},{"id":"https://openalex.org/C78434282","wikidata":"https://www.wikidata.org/wiki/Q11656","display_name":"Diode","level":2,"score":0.3953961133956909},{"id":"https://openalex.org/C165801399","wikidata":"https://www.wikidata.org/wiki/Q25428","display_name":"Voltage","level":2,"score":0.3294905424118042},{"id":"https://openalex.org/C171250308","wikidata":"https://www.wikidata.org/wiki/Q11468","display_name":"Nanotechnology","level":1,"score":0.3242979049682617},{"id":"https://openalex.org/C119599485","wikidata":"https://www.wikidata.org/wiki/Q43035","display_name":"Electrical engineering","level":1,"score":0.16361004114151},{"id":"https://openalex.org/C97355855","wikidata":"https://www.wikidata.org/wiki/Q11473","display_name":"Thermodynamics","level":1,"score":0.09604275226593018},{"id":"https://openalex.org/C121332964","wikidata":"https://www.wikidata.org/wiki/Q413","display_name":"Physics","level":0,"score":0.09119188785552979},{"id":"https://openalex.org/C111368507","wikidata":"https://www.wikidata.org/wiki/Q43518","display_name":"Oceanography","level":1,"score":0.0},{"id":"https://openalex.org/C62520636","wikidata":"https://www.wikidata.org/wiki/Q944","display_name":"Quantum mechanics","level":1,"score":0.0},{"id":"https://openalex.org/C127413603","wikidata":"https://www.wikidata.org/wiki/Q11023","display_name":"Engineering","level":0,"score":0.0},{"id":"https://openalex.org/C147120987","wikidata":"https://www.wikidata.org/wiki/Q2225","display_name":"Electron","level":2,"score":0.0},{"id":"https://openalex.org/C127313418","wikidata":"https://www.wikidata.org/wiki/Q1069","display_name":"Geology","level":0,"score":0.0}],"mesh":[],"locations_count":1,"locations":[{"id":"doi:10.1088/1361-6463/aac562","doi":"https://doi.org/10.1088/1361-6463/aac562","is_oa":true,"landing_page_url":"https://doi.org/10.1088/1361-6463/aac562","pdf_url":"https://iopscience.iop.org/article/10.1088/1361-6463/aac562/pdf","source":{"id":"https://openalex.org/S111927887","display_name":"Journal of Physics D Applied Physics","issn_l":"0022-3727","issn":["0022-3727","1361-6463"],"is_oa":false,"is_in_doaj":false,"is_core":true,"listed_in":["anvur-scientific","cwts-core","dongbi-d","jufo-1","ki-jl-1","norway-1","poland-70","russia-white-list-1","vabb-shw"],"host_organization":"https://openalex.org/P4310311669","host_organization_name":"Institute of Physics","host_organization_lineage":["https://openalex.org/P4310311669"],"host_organization_lineage_names":["Institute of Physics"],"type":"journal"},"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"Journal of Physics D: Applied Physics","raw_type":"journal-article"}],"best_oa_location":{"id":"doi:10.1088/1361-6463/aac562","doi":"https://doi.org/10.1088/1361-6463/aac562","is_oa":true,"landing_page_url":"https://doi.org/10.1088/1361-6463/aac562","pdf_url":"https://iopscience.iop.org/article/10.1088/1361-6463/aac562/pdf","source":{"id":"https://openalex.org/S111927887","display_name":"Journal of Physics D Applied Physics","issn_l":"0022-3727","issn":["0022-3727","1361-6463"],"is_oa":false,"is_in_doaj":false,"is_core":true,"listed_in":["anvur-scientific","cwts-core","dongbi-d","jufo-1","ki-jl-1","norway-1","poland-70","russia-white-list-1","vabb-shw"],"host_organization":"https://openalex.org/P4310311669","host_organization_name":"Institute of Physics","host_organization_lineage":["https://openalex.org/P4310311669"],"host_organization_lineage_names":["Institute of Physics"],"type":"journal"},"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"Journal of Physics D: Applied Physics","raw_type":"journal-article"},"sustainable_development_goals":[],"study_designs":[],"awards":[{"id":"https://openalex.org/G5757193873","display_name":null,"funder_award_id":"POR Campania Asse III ob. spec. 14 dec. 80 del 31/05/2016","funder_id":"https://openalex.org/F4320322218","funder_display_name":"Regione Campania"}],"funders":[{"id":"https://openalex.org/F4320322218","display_name":"Regione Campania","ror":"https://ror.org/02kg21794"},{"id":"https://openalex.org/F4320322892","display_name":"Centre National de la Recherche Scientifique","ror":"https://ror.org/02feahw73"}],"has_content":{"grobid_xml":true,"pdf":true},"content_urls":{"pdf":"https://content.openalex.org/works/W2804977928.pdf","grobid_xml":"https://content.openalex.org/works/W2804977928.grobid-xml"},"referenced_works_count":35,"referenced_works":["https://openalex.org/W1872496776","https://openalex.org/W1901415922","https://openalex.org/W1939561724","https://openalex.org/W1971608041","https://openalex.org/W1971985289","https://openalex.org/W1978889966","https://openalex.org/W1991410827","https://openalex.org/W1997926364","https://openalex.org/W2012336177","https://openalex.org/W2014718851","https://openalex.org/W2017054571","https://openalex.org/W2050155811","https://openalex.org/W2069591696","https://openalex.org/W2073570309","https://openalex.org/W2078845291","https://openalex.org/W2082215061","https://openalex.org/W2086284107","https://openalex.org/W2098238036","https://openalex.org/W2105685140","https://openalex.org/W2108102346","https://openalex.org/W2157927139","https://openalex.org/W2339378645","https://openalex.org/W2512689250","https://openalex.org/W2523750829","https://openalex.org/W2529336659","https://openalex.org/W2581340901","https://openalex.org/W2583932137","https://openalex.org/W2606201366","https://openalex.org/W2606810695","https://openalex.org/W2612485695","https://openalex.org/W2617293835","https://openalex.org/W2621326333","https://openalex.org/W2679903655","https://openalex.org/W2792980120","https://openalex.org/W3094677310"],"related_works":["https://openalex.org/W7221917496","https://openalex.org/W2165963298","https://openalex.org/W7034968074","https://openalex.org/W2136742661","https://openalex.org/W2050155811","https://openalex.org/W3083231021","https://openalex.org/W2529336659","https://openalex.org/W4395465354","https://openalex.org/W2618179994","https://openalex.org/W2120445934"],"abstract_inverted_index":{"Abstract":[0],"We":[1,71,106],"fabricate":[2],"graphene/p-Si":[3],"heterojunctions":[4],"and":[5,44,58,97],"characterize":[6],"their":[7],"current\u2013voltage":[8,117],"properties":[9],"in":[10,34,123],"a":[11,22,59,109,120],"wide":[12],"temperature":[13],"range.":[14],"The":[15,29],"devices":[16],"exhibit":[17],"Schottky":[18,30,60],"diode":[19],"behaviour":[20],"with":[21],"modest":[23],"rectification":[24],"factor":[25,54],"up":[26],"to":[27,95],".":[28],"parameters":[31],"are":[32],"estimated":[33],"the":[35,38,75,80,84,90,93,98,103,115],"framework":[36],"of":[37,55,63,86,100],"thermionic":[39],"emission":[40],"theory":[41],"using":[42],"Cheung\u2019s":[43],"Norde\u2019s":[45],"methods.":[46],"At":[47],"room":[48],"temperature,":[49],"we":[50],"obtain":[51],"an":[52],"ideality":[53],"about":[56],"2.5":[57],"barrier":[61],"height":[62],"0.18":[64],"eV,":[65],"which":[66],"reduces":[67],"at":[68,126],"lower":[69],"temperatures.":[70,128],"shed":[72],"light":[73],"on":[74],"physical":[76],"mechanisms":[77],"responsible":[78],"for":[79],"low":[81,127],"barrier,":[82],"discussing":[83],"p-doping":[85],"graphene":[87],"caused":[88],"by":[89],"transfer":[91],"process,":[92],"exposure":[94],"air":[96],"out-diffusion":[99],"boron":[101],"from":[102],"Si":[104],"substrate.":[105],"finally":[107],"propose":[108],"band":[110],"model":[111],"that":[112],"fully":[113],"explains":[114],"experimental":[116],"features,":[118],"included":[119],"plateau":[121],"observed":[122],"reverse":[124],"current":[125]},"counts_by_year":[{"year":2026,"cited_by_count":8},{"year":2025,"cited_by_count":8},{"year":2024,"cited_by_count":8},{"year":2023,"cited_by_count":10},{"year":2022,"cited_by_count":8},{"year":2021,"cited_by_count":16},{"year":2020,"cited_by_count":12},{"year":2019,"cited_by_count":13},{"year":2018,"cited_by_count":4}],"updated_date":"2026-11-10T11:39:43.021295","created_date":"2018-06-01T00:00:00"}