{"id":"https://openalex.org/W2804672769","doi":"https://doi.org/10.1063/1.5027822","title":"Effects of surface plasma treatment on threshold voltage hysteresis and instability in metal-insulator-semiconductor (MIS) AlGaN/GaN heterostructure HEMTs","display_name":"Effects of surface plasma treatment on threshold voltage hysteresis and instability in metal-insulator-semiconductor (MIS) AlGaN/GaN heterostructure HEMTs","publication_year":2018,"publication_date":"2018-05-14","ids":{"openalex":"https://openalex.org/W2804672769","doi":"https://doi.org/10.1063/1.5027822","mag":"2804672769"},"language":"en","primary_location":{"id":"doi:10.1063/1.5027822","doi":"https://doi.org/10.1063/1.5027822","is_oa":false,"landing_page_url":"https://doi.org/10.1063/1.5027822","pdf_url":null,"source":{"id":"https://openalex.org/S187991544","display_name":"Journal of Applied Physics","issn_l":"0021-8979","issn":["0021-8979","1089-7550","1520-8850"],"is_oa":false,"is_in_doaj":false,"is_core":true,"listed_in":["anvur-scientific","cwts-core","dongbi-d","jufo-1","norway-1","poland-100","russia-white-list-1","vabb-shw"],"host_organization":"https://openalex.org/P4310320257","host_organization_name":"American Institute of Physics","host_organization_lineage":["https://openalex.org/P4310320257"],"host_organization_lineage_names":["American Institute of Physics"],"type":"journal"},"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"Journal of Applied Physics","raw_type":"journal-article"},"volume":null,"type":"article","is_traditional":true,"indexed_in":["crossref"],"open_access":{"is_oa":false,"oa_status":"closed","oa_url":null,"any_repository_has_fulltext":false},"authorships":[{"author_position":"first","author":{"id":"https://openalex.org/A5051333995","display_name":"Zaffar H. Zaidi","orcid":"https://orcid.org/0000-0002-2088-6166","observed_orcids":["https://orcid.org/0000-0002-2088-6166"]},"institutions":[{"id":"https://openalex.org/I91136226","display_name":"University of Sheffield","ror":"https://ror.org/05krs5044","country_code":"GB","type":"education","lineage":["https://openalex.org/I91136226"]}],"countries":["GB"],"is_corresponding":true,"raw_author_name":"Z. H. Zaidi","raw_affiliation_strings":["Department of Electronic and Electrical Engineering, The University of Sheffield 1 , Mappin Street, Sheffield S1 3JD, United Kingdom"],"raw_orcid":"https://orcid.org/0000-0002-2088-6166","affiliations":[{"raw_affiliation_string":"Department of Electronic and Electrical Engineering, The University of Sheffield 1 , Mappin Street, Sheffield S1 3JD, United Kingdom","institution_ids":["https://openalex.org/I91136226"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5024082076","display_name":"K. B. Lee","orcid":null,"observed_orcids":[]},"institutions":[{"id":"https://openalex.org/I91136226","display_name":"University of Sheffield","ror":"https://ror.org/05krs5044","country_code":"GB","type":"education","lineage":["https://openalex.org/I91136226"]}],"countries":["GB"],"is_corresponding":false,"raw_author_name":"K. B. Lee","raw_affiliation_strings":["Department of Electronic and Electrical Engineering, The University of Sheffield 1 , Mappin Street, Sheffield S1 3JD, United Kingdom"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Department of Electronic and Electrical Engineering, The University of Sheffield 1 , Mappin Street, Sheffield S1 3JD, United Kingdom","institution_ids":["https://openalex.org/I91136226"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5087822279","display_name":"Joseph W. Roberts","orcid":"https://orcid.org/0000-0001-9207-627X","observed_orcids":["https://orcid.org/0000-0001-9207-627X"]},"institutions":[{"id":"https://openalex.org/I146655781","display_name":"University of Liverpool","ror":"https://ror.org/04xs57h96","country_code":"GB","type":"education","lineage":["https://openalex.org/I146655781"]}],"countries":["GB"],"is_corresponding":false,"raw_author_name":"J. W. Roberts","raw_affiliation_strings":["Centre for Materials and Structures, University of Liverpool 2 , The Quadrangle, Brownlow Hill, Liverpool L69 3GH, United Kingdom"],"raw_orcid":"https://orcid.org/0000-0001-9207-627X","affiliations":[{"raw_affiliation_string":"Centre for Materials and Structures, University of Liverpool 2 , The Quadrangle, Brownlow Hill, Liverpool L69 3GH, United Kingdom","institution_ids":["https://openalex.org/I146655781"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5056748271","display_name":"Ivor Guiney","orcid":null,"observed_orcids":[]},"institutions":[{"id":"https://openalex.org/I241749","display_name":"University of Cambridge","ror":"https://ror.org/013meh722","country_code":"GB","type":"education","lineage":["https://openalex.org/I241749"]}],"countries":["GB"],"is_corresponding":false,"raw_author_name":"I. Guiney","raw_affiliation_strings":["Department of Material Science and Metallurgy, The University of Cambridge 3 , 27 Charles Babbage Road, Cambridge CB3 0FS, United Kingdom"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Department of Material Science and Metallurgy, The University of Cambridge 3 , 27 Charles Babbage Road, Cambridge CB3 0FS, United Kingdom","institution_ids":["https://openalex.org/I241749"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5010967229","display_name":"Hongtu Qian","orcid":"https://orcid.org/0000-0003-4597-6325","observed_orcids":["https://orcid.org/0000-0003-4597-6325"]},"institutions":[{"id":"https://openalex.org/I91136226","display_name":"University of Sheffield","ror":"https://ror.org/05krs5044","country_code":"GB","type":"education","lineage":["https://openalex.org/I91136226"]}],"countries":["GB"],"is_corresponding":false,"raw_author_name":"H. Qian","raw_affiliation_strings":["Department of Electronic and Electrical Engineering, The University of Sheffield 1 , Mappin Street, Sheffield S1 3JD, United Kingdom"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Department of Electronic and Electrical Engineering, The University of Sheffield 1 , Mappin Street, Sheffield S1 3JD, United Kingdom","institution_ids":["https://openalex.org/I91136226"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5101711290","display_name":"Sheng Jiang","orcid":"https://orcid.org/0000-0002-3687-1882","observed_orcids":["https://orcid.org/0000-0002-3687-1882"]},"institutions":[{"id":"https://openalex.org/I91136226","display_name":"University of Sheffield","ror":"https://ror.org/05krs5044","country_code":"GB","type":"education","lineage":["https://openalex.org/I91136226"]}],"countries":["GB"],"is_corresponding":false,"raw_author_name":"S. Jiang","raw_affiliation_strings":["Department of Electronic and Electrical Engineering, The University of Sheffield 1 , Mappin Street, Sheffield S1 3JD, United Kingdom"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Department of Electronic and Electrical Engineering, The University of Sheffield 1 , Mappin Street, Sheffield S1 3JD, United Kingdom","institution_ids":["https://openalex.org/I91136226"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5033595244","display_name":"J. S. Cheong","orcid":"https://orcid.org/0009-0001-9919-8779","observed_orcids":["https://orcid.org/0009-0001-9919-8779"]},"institutions":[{"id":"https://openalex.org/I91136226","display_name":"University of Sheffield","ror":"https://ror.org/05krs5044","country_code":"GB","type":"education","lineage":["https://openalex.org/I91136226"]}],"countries":["GB"],"is_corresponding":false,"raw_author_name":"J. S. Cheong","raw_affiliation_strings":["Department of Electronic and Electrical Engineering, The University of Sheffield 1 , Mappin Street, Sheffield S1 3JD, United Kingdom"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Department of Electronic and Electrical Engineering, The University of Sheffield 1 , Mappin Street, Sheffield S1 3JD, United Kingdom","institution_ids":["https://openalex.org/I91136226"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5010548949","display_name":"Penglei Li","orcid":"https://orcid.org/0000-0003-0992-4616","observed_orcids":["https://orcid.org/0000-0003-0992-4616"]},"institutions":[{"id":"https://openalex.org/I91136226","display_name":"University of Sheffield","ror":"https://ror.org/05krs5044","country_code":"GB","type":"education","lineage":["https://openalex.org/I91136226"]}],"countries":["GB"],"is_corresponding":false,"raw_author_name":"P. Li","raw_affiliation_strings":["Department of Electronic and Electrical Engineering, The University of Sheffield 1 , Mappin Street, Sheffield S1 3JD, United Kingdom"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Department of Electronic and Electrical Engineering, The University of Sheffield 1 , Mappin Street, Sheffield S1 3JD, United Kingdom","institution_ids":["https://openalex.org/I91136226"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5043854005","display_name":"D. J. Wallis","orcid":"https://orcid.org/0000-0002-0475-7583","observed_orcids":["https://orcid.org/0000-0002-0475-7583"]},"institutions":[{"id":"https://openalex.org/I241749","display_name":"University of Cambridge","ror":"https://ror.org/013meh722","country_code":"GB","type":"education","lineage":["https://openalex.org/I241749"]},{"id":"https://openalex.org/I79510175","display_name":"Cardiff University","ror":"https://ror.org/03kk7td41","country_code":"GB","type":"education","lineage":["https://openalex.org/I79510175"]}],"countries":["GB"],"is_corresponding":false,"raw_author_name":"D. J. Wallis","raw_affiliation_strings":["Centre for High-Frequency Engineering, University of Cardiff 4 , 5 The Parade, Newport Road, Cardiff CF24 3AA, United Kingdom","Department of Material Science and Metallurgy, The University of Cambridge 3 , 27 Charles Babbage Road, Cambridge CB3 0FS, United Kingdom"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Centre for High-Frequency Engineering, University of Cardiff 4 , 5 The Parade, Newport Road, Cardiff CF24 3AA, United Kingdom","institution_ids":["https://openalex.org/I79510175"]},{"raw_affiliation_string":"Department of Material Science and Metallurgy, The University of Cambridge 3 , 27 Charles Babbage Road, Cambridge CB3 0FS, United Kingdom","institution_ids":["https://openalex.org/I241749"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5020842649","display_name":"Colin John Humphreys","orcid":"https://orcid.org/0000-0001-5053-3380","observed_orcids":["https://orcid.org/0000-0001-5053-3380"]},"institutions":[{"id":"https://openalex.org/I241749","display_name":"University of Cambridge","ror":"https://ror.org/013meh722","country_code":"GB","type":"education","lineage":["https://openalex.org/I241749"]}],"countries":["GB"],"is_corresponding":false,"raw_author_name":"C. J. Humphreys","raw_affiliation_strings":["Department of Material Science and Metallurgy, The University of Cambridge 3 , 27 Charles Babbage Road, Cambridge CB3 0FS, United Kingdom"],"raw_orcid":"https://orcid.org/0000-0001-5053-3380","affiliations":[{"raw_affiliation_string":"Department of Material Science and Metallurgy, The University of Cambridge 3 , 27 Charles Babbage Road, Cambridge CB3 0FS, United Kingdom","institution_ids":["https://openalex.org/I241749"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5015486428","display_name":"Paul Raymond Chalker","orcid":"https://orcid.org/0000-0002-2295-6332","observed_orcids":["https://orcid.org/0000-0002-2295-6332"]},"institutions":[{"id":"https://openalex.org/I146655781","display_name":"University of Liverpool","ror":"https://ror.org/04xs57h96","country_code":"GB","type":"education","lineage":["https://openalex.org/I146655781"]}],"countries":["GB"],"is_corresponding":false,"raw_author_name":"P. R. Chalker","raw_affiliation_strings":["Centre for Materials and Structures, University of Liverpool 2 , The Quadrangle, Brownlow Hill, Liverpool L69 3GH, United Kingdom"],"raw_orcid":"https://orcid.org/0000-0002-2295-6332","affiliations":[{"raw_affiliation_string":"Centre for Materials and Structures, University of Liverpool 2 , The Quadrangle, Brownlow Hill, Liverpool L69 3GH, United Kingdom","institution_ids":["https://openalex.org/I146655781"]}]},{"author_position":"last","author":{"id":"https://openalex.org/A5080020074","display_name":"P.A. Houston","orcid":"https://orcid.org/0000-0002-3189-0646","observed_orcids":["https://orcid.org/0000-0002-3189-0646"]},"institutions":[{"id":"https://openalex.org/I91136226","display_name":"University of Sheffield","ror":"https://ror.org/05krs5044","country_code":"GB","type":"education","lineage":["https://openalex.org/I91136226"]}],"countries":["GB"],"is_corresponding":false,"raw_author_name":"P. A. Houston","raw_affiliation_strings":["Department of Electronic and Electrical Engineering, The University of Sheffield 1 , Mappin Street, Sheffield S1 3JD, United Kingdom"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Department of Electronic and Electrical Engineering, The University of Sheffield 1 , Mappin Street, Sheffield S1 3JD, United Kingdom","institution_ids":["https://openalex.org/I91136226"]}]}],"institutions":[],"countries_distinct_count":1,"institutions_distinct_count":4,"corresponding_author_ids":["https://openalex.org/A5051333995"],"corresponding_institution_ids":["https://openalex.org/I91136226"],"apc_list":{"value":3500,"currency":"USD","value_usd":3500},"apc_paid":null,"fwci":0.4194,"has_fulltext":false,"cited_by_count":11,"citation_normalized_percentile":{"value":0.54728852,"is_in_top_1_percent":false,"is_in_top_10_percent":false},"cited_by_percentile_year":{"min":87,"max":96},"biblio":{"volume":"123","issue":"18","first_page":null,"last_page":null},"is_retracted":false,"is_paratext":false,"is_xpac":false,"primary_topic":{"id":"https://openalex.org/T10099","display_name":"GaN-based semiconductor devices and materials","score":0.9945999979972839,"subfield":{"id":"https://openalex.org/subfields/3104","display_name":"Condensed Matter Physics"},"field":{"id":"https://openalex.org/fields/31","display_name":"Physics and Astronomy"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},"topics":[{"id":"https://openalex.org/T10099","display_name":"GaN-based semiconductor devices and materials","score":0.9945999979972839,"subfield":{"id":"https://openalex.org/subfields/3104","display_name":"Condensed Matter Physics"},"field":{"id":"https://openalex.org/fields/31","display_name":"Physics and Astronomy"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T10472","display_name":"Semiconductor materials and devices","score":0.0035000001080334187,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T10361","display_name":"Silicon Carbide Semiconductor Technologies","score":0.0012000000569969416,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}}],"keywords":[{"id":"https://openalex.org/keywords/plasma-surface-treatment","display_name":"plasma surface treatment","score":0.7770000100135803},{"id":"https://openalex.org/keywords/threshold-voltage-hysteresis","display_name":"threshold voltage hysteresis","score":0.9929999709129333},{"id":"https://openalex.org/keywords/algan-gan-heterostructures","display_name":"AlGaN/GaN heterostructures","score":0.8149999976158142},{"id":"https://openalex.org/keywords/high-electron-mobility-transistors","display_name":"high electron mobility transistors","score":0.9300000071525574},{"id":"https://openalex.org/keywords/mis-hemt","display_name":"MIS-HEMT","score":0.6259999871253967},{"id":"https://openalex.org/keywords/reverse-bias-stress","display_name":"reverse bias stress","score":0.8259999752044678},{"id":"https://openalex.org/keywords/al2o3-gate-dielectric","display_name":"Al2O3 gate dielectric","score":0.8019999861717224},{"id":"https://openalex.org/keywords/interface-states","display_name":"interface states","score":0.7490000128746033},{"id":"https://openalex.org/keywords/in-gap-states","display_name":"gap states","score":0.6520000100135803},{"id":"https://openalex.org/keywords/donor-levels","display_name":"donor levels","score":0.48500001430511475},{"id":"https://openalex.org/keywords/device-instability","display_name":"device instability","score":0.3610000014305115}],"concepts":[{"id":"https://openalex.org/C192562407","wikidata":"https://www.wikidata.org/wiki/Q228736","display_name":"Materials science","level":0,"score":0.7919781804084778},{"id":"https://openalex.org/C123299182","wikidata":"https://www.wikidata.org/wiki/Q190837","display_name":"Hysteresis","level":2,"score":0.7191956639289856},{"id":"https://openalex.org/C79794668","wikidata":"https://www.wikidata.org/wiki/Q1616270","display_name":"Heterojunction","level":2,"score":0.7183586359024048},{"id":"https://openalex.org/C195370968","wikidata":"https://www.wikidata.org/wiki/Q1754002","display_name":"Threshold voltage","level":4,"score":0.6318956017494202},{"id":"https://openalex.org/C108225325","wikidata":"https://www.wikidata.org/wiki/Q11456","display_name":"Semiconductor","level":2,"score":0.6077081561088562},{"id":"https://openalex.org/C49040817","wikidata":"https://www.wikidata.org/wiki/Q193091","display_name":"Optoelectronics","level":1,"score":0.5991548895835876},{"id":"https://openalex.org/C189278905","wikidata":"https://www.wikidata.org/wiki/Q2157708","display_name":"Wide-bandgap semiconductor","level":2,"score":0.5762944221496582},{"id":"https://openalex.org/C26873012","wikidata":"https://www.wikidata.org/wiki/Q214781","display_name":"Condensed matter physics","level":1,"score":0.5255376696586609},{"id":"https://openalex.org/C212702","wikidata":"https://www.wikidata.org/wiki/Q178150","display_name":"Insulator (electricity)","level":2,"score":0.5163754224777222},{"id":"https://openalex.org/C133386390","wikidata":"https://www.wikidata.org/wiki/Q184996","display_name":"Dielectric","level":2,"score":0.4856208860874176},{"id":"https://openalex.org/C207821765","wikidata":"https://www.wikidata.org/wiki/Q405372","display_name":"Instability","level":2,"score":0.47317034006118774},{"id":"https://openalex.org/C172385210","wikidata":"https://www.wikidata.org/wiki/Q5339","display_name":"Transistor","level":3,"score":0.44742751121520996},{"id":"https://openalex.org/C82706917","wikidata":"https://www.wikidata.org/wiki/Q10251","display_name":"Plasma","level":2,"score":0.4334244728088379},{"id":"https://openalex.org/C165801399","wikidata":"https://www.wikidata.org/wiki/Q25428","display_name":"Voltage","level":2,"score":0.3063543736934662},{"id":"https://openalex.org/C119599485","wikidata":"https://www.wikidata.org/wiki/Q43035","display_name":"Electrical engineering","level":1,"score":0.1516515016555786},{"id":"https://openalex.org/C121332964","wikidata":"https://www.wikidata.org/wiki/Q413","display_name":"Physics","level":0,"score":0.06987854838371277},{"id":"https://openalex.org/C62520636","wikidata":"https://www.wikidata.org/wiki/Q944","display_name":"Quantum mechanics","level":1,"score":0.0},{"id":"https://openalex.org/C127413603","wikidata":"https://www.wikidata.org/wiki/Q11023","display_name":"Engineering","level":0,"score":0.0},{"id":"https://openalex.org/C57879066","wikidata":"https://www.wikidata.org/wiki/Q41217","display_name":"Mechanics","level":1,"score":0.0}],"mesh":[],"locations_count":5,"locations":[{"id":"doi:10.1063/1.5027822","doi":"https://doi.org/10.1063/1.5027822","is_oa":false,"landing_page_url":"https://doi.org/10.1063/1.5027822","pdf_url":null,"source":{"id":"https://openalex.org/S187991544","display_name":"Journal of Applied Physics","issn_l":"0021-8979","issn":["0021-8979","1089-7550","1520-8850"],"is_oa":false,"is_in_doaj":false,"is_core":true,"listed_in":["anvur-scientific","cwts-core","dongbi-d","jufo-1","norway-1","poland-100","russia-white-list-1","vabb-shw"],"host_organization":"https://openalex.org/P4310320257","host_organization_name":"American Institute of Physics","host_organization_lineage":["https://openalex.org/P4310320257"],"host_organization_lineage_names":["American Institute of Physics"],"type":"journal"},"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"Journal of Applied Physics","raw_type":"journal-article"},{"id":"pmh:oai:eprints.whiterose.ac.uk:131498","doi":null,"is_oa":false,"landing_page_url":"http://eprints.whiterose.ac.uk/131498/1/Effects%20of%20surface%20plasma%20treatment%20on%20threshold%20voltage%20hysteresis%20and.pdf","pdf_url":"http://eprints.whiterose.ac.uk/131498/1/Effects%20of%20surface%20plasma%20treatment%20on%20threshold%20voltage%20hysteresis%20and.pdf","source":{"id":"https://openalex.org/S4306400854","display_name":"White Rose Research Online (University of Leeds, The University of Sheffield, University of York)","issn_l":null,"issn":null,"is_oa":false,"is_in_doaj":false,"is_core":false,"listed_in":[],"host_organization":"https://openalex.org/I2800616092","host_organization_name":"White Rose University Consortium","host_organization_lineage":["https://openalex.org/I2800616092"],"host_organization_lineage_names":[],"type":"repository"},"license":null,"license_id":null,"version":"acceptedVersion","is_accepted":true,"is_published":false,"raw_source_name":"","raw_type":"Article"},{"id":"pmh:oai:http://orca.cardiff.ac.uk:111500","doi":null,"is_oa":false,"landing_page_url":"https://orca.cardiff.ac.uk/id/eprint/111500/1/Effects%20of%20surface%20plasma%20treatment%20on%20threshold%20voltage%20hysteresis%20and%20....pdf","pdf_url":"https://orca.cardiff.ac.uk/id/eprint/111500/1/Effects%20of%20surface%20plasma%20treatment%20on%20threshold%20voltage%20hysteresis%20and%20....pdf","source":{"id":"https://openalex.org/S4306401195","display_name":"ORCA Online Research @Cardiff (Cardiff University)","issn_l":null,"issn":null,"is_oa":false,"is_in_doaj":false,"is_core":false,"listed_in":[],"host_organization":"https://openalex.org/I79510175","host_organization_name":"Cardiff University","host_organization_lineage":["https://openalex.org/I79510175"],"host_organization_lineage_names":[],"type":"repository"},"license":null,"license_id":null,"version":"acceptedVersion","is_accepted":true,"is_published":false,"raw_source_name":"","raw_type":"Article"},{"id":"pmh:oai:https://orca.cardiff.ac.uk:111500","doi":null,"is_oa":false,"landing_page_url":"https://orca.cardiff.ac.uk/id/eprint/111500/1/Effects%20of%20surface%20plasma%20treatment%20on%20threshold%20voltage%20hysteresis%20and%20....pdf","pdf_url":"https://orca.cardiff.ac.uk/id/eprint/111500/1/Effects%20of%20surface%20plasma%20treatment%20on%20threshold%20voltage%20hysteresis%20and%20....pdf","source":{"id":"https://openalex.org/S4306401195","display_name":"ORCA Online Research @Cardiff (Cardiff University)","issn_l":null,"issn":null,"is_oa":false,"is_in_doaj":false,"is_core":false,"listed_in":[],"host_organization":"https://openalex.org/I79510175","host_organization_name":"Cardiff University","host_organization_lineage":["https://openalex.org/I79510175"],"host_organization_lineage_names":[],"type":"repository"},"license":null,"license_id":null,"version":"acceptedVersion","is_accepted":true,"is_published":false,"raw_source_name":null,"raw_type":"Article"},{"id":"pmh:oai:http://orca-dev.cardiff.ac.uk:111500","doi":null,"is_oa":false,"landing_page_url":"https://orca.cardiff.ac.uk/id/eprint/111500/","pdf_url":null,"source":{"id":"https://openalex.org/S4306401195","display_name":"ORCA Online Research @Cardiff (Cardiff University)","issn_l":null,"issn":null,"is_oa":false,"is_in_doaj":false,"is_core":false,"listed_in":[],"host_organization":"https://openalex.org/I79510175","host_organization_name":"Cardiff University","host_organization_lineage":["https://openalex.org/I79510175"],"host_organization_lineage_names":[],"type":"repository"},"license":null,"license_id":null,"version":"submittedVersion","is_accepted":false,"is_published":false,"raw_source_name":"","raw_type":"Article"}],"best_oa_location":null,"sustainable_development_goals":[],"study_designs":[],"awards":[{"id":"https://openalex.org/G2966428326","display_name":null,"funder_award_id":"EP/N01202X/2","funder_id":"https://openalex.org/F4320334627","funder_display_name":"Engineering and Physical Sciences Research Council"},{"id":"https://openalex.org/G6840172646","display_name":"Silicon Compatible GaN Power Electronics","funder_award_id":"EP/K014471/1","funder_id":"https://openalex.org/F4320334627","funder_display_name":"Engineering and Physical Sciences Research Council"},{"id":"https://openalex.org/G8047997814","display_name":"EPSRC Manufacturing Fellowship in Gallium Nitride","funder_award_id":"EP/N01202X/1","funder_id":"https://openalex.org/F4320334627","funder_display_name":"Engineering and Physical Sciences Research Council"}],"funders":[{"id":"https://openalex.org/F4320334627","display_name":"Engineering and Physical Sciences Research Council","ror":"https://ror.org/0439y7842"}],"has_content":{"grobid_xml":false,"pdf":false},"content_urls":null,"referenced_works_count":36,"referenced_works":["https://openalex.org/W1497509279","https://openalex.org/W1518186876","https://openalex.org/W1552942554","https://openalex.org/W1653926124","https://openalex.org/W1669917242","https://openalex.org/W1832660993","https://openalex.org/W1870791889","https://openalex.org/W1977513035","https://openalex.org/W1979842232","https://openalex.org/W1980061358","https://openalex.org/W1981421833","https://openalex.org/W1989716345","https://openalex.org/W1994987610","https://openalex.org/W2007213563","https://openalex.org/W2009042116","https://openalex.org/W2013461555","https://openalex.org/W2025704411","https://openalex.org/W2041457113","https://openalex.org/W2041673907","https://openalex.org/W2047708973","https://openalex.org/W2048107954","https://openalex.org/W2048627443","https://openalex.org/W2060135545","https://openalex.org/W2065103822","https://openalex.org/W2075997516","https://openalex.org/W2078190444","https://openalex.org/W2085066220","https://openalex.org/W2086863632","https://openalex.org/W2092480864","https://openalex.org/W2094607903","https://openalex.org/W2101919038","https://openalex.org/W2311631879","https://openalex.org/W2344143403","https://openalex.org/W2525023663","https://openalex.org/W2562715087","https://openalex.org/W2775657143"],"related_works":["https://openalex.org/W3101116753","https://openalex.org/W2086929603","https://openalex.org/W2403118858","https://openalex.org/W2007213563","https://openalex.org/W2077572926","https://openalex.org/W3003238817","https://openalex.org/W2169137051","https://openalex.org/W2465095457","https://openalex.org/W2120465859","https://openalex.org/W4205701861"],"abstract_inverted_index":{"In":[0],"a":[1,29,74,82,108],"bid":[2],"to":[3,66],"understand":[4],"the":[5,10,46,87,97,101,112],"commonly":[6],"observed":[7,51],"hysteresis":[8],"in":[9,14,100],"threshold":[11],"voltage":[12],"(VTH)":[13],"AlGaN/GaN":[15],"metal-insulator-semiconductor":[16],"high":[17],"electron":[18],"mobility":[19],"transistors":[20],"during":[21],"forward":[22,58],"gate":[23],"bias":[24,59,68],"stress,":[25],"we":[26],"have":[27],"analyzed":[28],"series":[30],"of":[31],"measurements":[32],"on":[33],"devices":[34],"with":[35,40,81],"no":[36],"surface":[37],"treatment":[38],"and":[39,63],"two":[41],"different":[42],"plasma":[43],"treatments":[44],"before":[45],"in-situ":[47],"Al2O3":[48],"deposition.":[49],"The":[50],"changes":[52],"between":[53],"samples":[54],"were":[55],"quasi-equilibrium":[56],"VTH,":[57],"related":[60],"VTH":[61],"hysteresis,":[62],"electrical":[64],"response":[65],"reverse":[67],"stress.":[69],"To":[70],"explain":[71],"these":[72],"effects,":[73],"disorder":[75],"induced":[76],"gap":[77],"state":[78,103],"model,":[79],"combined":[80],"discrete":[83],"level":[84],"donor,":[85],"at":[86],"dielectric/semiconductor":[88],"interface":[89,102],"was":[90],"employed.":[91],"Technology":[92],"Computer-Aided":[93],"Design":[94],"modeling":[95],"demonstrated":[96],"possible":[98],"differences":[99],"distributions":[104],"that":[105],"could":[106],"give":[107],"consistent":[109],"explanation":[110],"for":[111],"observations.":[113]},"counts_by_year":[{"year":2026,"cited_by_count":2},{"year":2025,"cited_by_count":2},{"year":2024,"cited_by_count":1},{"year":2023,"cited_by_count":1},{"year":2022,"cited_by_count":1},{"year":2021,"cited_by_count":1},{"year":2020,"cited_by_count":1},{"year":2019,"cited_by_count":2}],"updated_date":"2026-11-03T10:50:19.383937","created_date":"2018-06-01T00:00:00"}