{"id":"https://openalex.org/W2801426334","doi":"https://doi.org/10.1063/1.5018737","title":"Atomistic modeling trap-assisted tunneling in hole tunnel field effect transistors","display_name":"Atomistic modeling trap-assisted tunneling in hole tunnel field effect transistors","publication_year":2018,"publication_date":"2018-05-04","ids":{"openalex":"https://openalex.org/W2801426334","doi":"https://doi.org/10.1063/1.5018737","mag":"2801426334"},"language":"en","primary_location":{"id":"doi:10.1063/1.5018737","doi":"https://doi.org/10.1063/1.5018737","is_oa":false,"landing_page_url":"https://doi.org/10.1063/1.5018737","pdf_url":null,"source":{"id":"https://openalex.org/S187991544","display_name":"Journal of Applied Physics","issn_l":"0021-8979","issn":["0021-8979","1089-7550","1520-8850"],"is_oa":false,"is_in_doaj":false,"is_core":true,"listed_in":["anvur-scientific","cwts-core","dongbi-d","jufo-1","norway-1","poland-100","russia-white-list-1","vabb-shw"],"host_organization":"https://openalex.org/P4310320257","host_organization_name":"American Institute of Physics","host_organization_lineage":["https://openalex.org/P4310320257"],"host_organization_lineage_names":["American Institute of Physics"],"type":"journal"},"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"Journal of Applied Physics","raw_type":"journal-article"},"volume":null,"type":"article","is_traditional":true,"indexed_in":["crossref"],"open_access":{"is_oa":false,"oa_status":"closed","oa_url":null,"any_repository_has_fulltext":false},"authorships":[{"author_position":"first","author":{"id":"https://openalex.org/A5089134792","display_name":"Pengyu Long","orcid":"https://orcid.org/0000-0001-5986-9809","observed_orcids":["https://orcid.org/0000-0001-5986-9809"]},"institutions":[{"id":"https://openalex.org/I219193219","display_name":"Purdue University West Lafayette","ror":"https://ror.org/02dqehb95","country_code":"US","type":"education","lineage":["https://openalex.org/I219193219"]}],"countries":["US"],"is_corresponding":false,"raw_author_name":"Pengyu Long","raw_affiliation_strings":["School of Electrical and Computer Engineering, Network for Computational Nanotechnology, Purdue University 1 , West Lafayette, Indiana 47907, USA"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"School of Electrical and Computer Engineering, Network for Computational Nanotechnology, Purdue University 1 , West Lafayette, Indiana 47907, USA","institution_ids":["https://openalex.org/I219193219"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5036410947","display_name":"Jun Zh. Huang","orcid":"https://orcid.org/0000-0002-6536-7669","observed_orcids":["https://orcid.org/0000-0002-6536-7669"]},"institutions":[{"id":"https://openalex.org/I219193219","display_name":"Purdue University West Lafayette","ror":"https://ror.org/02dqehb95","country_code":"US","type":"education","lineage":["https://openalex.org/I219193219"]}],"countries":["US"],"is_corresponding":false,"raw_author_name":"Jun Z. Huang","raw_affiliation_strings":["School of Electrical and Computer Engineering, Network for Computational Nanotechnology, Purdue University 1 , West Lafayette, Indiana 47907, USA"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"School of Electrical and Computer Engineering, Network for Computational Nanotechnology, Purdue University 1 , West Lafayette, Indiana 47907, USA","institution_ids":["https://openalex.org/I219193219"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5054359103","display_name":"Michael Povolotskyi","orcid":"https://orcid.org/0000-0002-1868-9534","observed_orcids":["https://orcid.org/0000-0002-1868-9534"]},"institutions":[{"id":"https://openalex.org/I219193219","display_name":"Purdue University West Lafayette","ror":"https://ror.org/02dqehb95","country_code":"US","type":"education","lineage":["https://openalex.org/I219193219"]}],"countries":["US"],"is_corresponding":false,"raw_author_name":"Michael Povolotskyi","raw_affiliation_strings":["Birck Nanotechnology Center, Purdue University 2 , West Lafayette, Indiana 47907, USA"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Birck Nanotechnology Center, Purdue University 2 , West Lafayette, Indiana 47907, USA","institution_ids":["https://openalex.org/I219193219"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5019826553","display_name":"Prasad S. Sarangapani","orcid":"https://orcid.org/0000-0002-5025-9155","observed_orcids":["https://orcid.org/0000-0002-5025-9155"]},"institutions":[{"id":"https://openalex.org/I219193219","display_name":"Purdue University West Lafayette","ror":"https://ror.org/02dqehb95","country_code":"US","type":"education","lineage":["https://openalex.org/I219193219"]}],"countries":["US"],"is_corresponding":false,"raw_author_name":"Prasad Sarangapani","raw_affiliation_strings":["School of Electrical and Computer Engineering, Network for Computational Nanotechnology, Purdue University 1 , West Lafayette, Indiana 47907, USA"],"raw_orcid":"https://orcid.org/0000-0002-5025-9155","affiliations":[{"raw_affiliation_string":"School of Electrical and Computer Engineering, Network for Computational Nanotechnology, Purdue University 1 , West Lafayette, Indiana 47907, USA","institution_ids":["https://openalex.org/I219193219"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5010256018","display_name":"Gustavo A. Valencia-Zapata","orcid":"https://orcid.org/0000-0002-3155-2129","observed_orcids":["https://orcid.org/0000-0002-3155-2129"]},"institutions":[{"id":"https://openalex.org/I219193219","display_name":"Purdue University West Lafayette","ror":"https://ror.org/02dqehb95","country_code":"US","type":"education","lineage":["https://openalex.org/I219193219"]}],"countries":["US"],"is_corresponding":false,"raw_author_name":"Gustavo A. Valencia-Zapata","raw_affiliation_strings":["School of Electrical and Computer Engineering, Network for Computational Nanotechnology, Purdue University 1 , West Lafayette, Indiana 47907, USA"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"School of Electrical and Computer Engineering, Network for Computational Nanotechnology, Purdue University 1 , West Lafayette, Indiana 47907, USA","institution_ids":["https://openalex.org/I219193219"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5047754095","display_name":"Tillmann Kubis","orcid":"https://orcid.org/0000-0001-8188-6162","observed_orcids":["https://orcid.org/0000-0001-8188-6162"]},"institutions":[{"id":"https://openalex.org/I219193219","display_name":"Purdue University West Lafayette","ror":"https://ror.org/02dqehb95","country_code":"US","type":"education","lineage":["https://openalex.org/I219193219"]}],"countries":["US"],"is_corresponding":false,"raw_author_name":"Tillmann Kubis","raw_affiliation_strings":["School of Electrical and Computer Engineering, Network for Computational Nanotechnology, Purdue University 1 , West Lafayette, Indiana 47907, USA"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"School of Electrical and Computer Engineering, Network for Computational Nanotechnology, Purdue University 1 , West Lafayette, Indiana 47907, USA","institution_ids":["https://openalex.org/I219193219"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5103254043","display_name":"Mark J. W. Rodwell","orcid":"https://orcid.org/0000-0002-5989-1616","observed_orcids":["https://orcid.org/0000-0002-5989-1616"]},"institutions":[{"id":"https://openalex.org/I154570441","display_name":"University of California, Santa Barbara","ror":"https://ror.org/02t274463","country_code":"US","type":"education","lineage":["https://openalex.org/I154570441"]}],"countries":["US"],"is_corresponding":false,"raw_author_name":"Mark J. W. Rodwell","raw_affiliation_strings":["Department of Electrical and Computer Engineering, University of California 3 , Santa Barbara, California 93106, USA"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Department of Electrical and Computer Engineering, University of California 3 , Santa Barbara, California 93106, USA","institution_ids":["https://openalex.org/I154570441"]}]},{"author_position":"last","author":{"id":"https://openalex.org/A5002176646","display_name":"Gerhard Klimeck","orcid":"https://orcid.org/0000-0001-7128-773X","observed_orcids":["https://orcid.org/0000-0001-7128-773X"]},"institutions":[{"id":"https://openalex.org/I219193219","display_name":"Purdue University West Lafayette","ror":"https://ror.org/02dqehb95","country_code":"US","type":"education","lineage":["https://openalex.org/I219193219"]}],"countries":["US"],"is_corresponding":false,"raw_author_name":"Gerhard Klimeck","raw_affiliation_strings":["School of Electrical and Computer Engineering, Network for Computational Nanotechnology, Purdue University 1 , West Lafayette, Indiana 47907, USA"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"School of Electrical and Computer Engineering, Network for Computational Nanotechnology, Purdue University 1 , West Lafayette, Indiana 47907, USA","institution_ids":["https://openalex.org/I219193219"]}]}],"institutions":[],"countries_distinct_count":1,"institutions_distinct_count":2,"corresponding_author_ids":[],"corresponding_institution_ids":[],"apc_list":{"value":3500,"currency":"USD","value_usd":3500},"apc_paid":null,"fwci":0.4755,"has_fulltext":false,"cited_by_count":8,"citation_normalized_percentile":{"value":0.59297847,"is_in_top_1_percent":false,"is_in_top_10_percent":false},"cited_by_percentile_year":{"min":88,"max":96},"biblio":{"volume":"123","issue":"17","first_page":null,"last_page":null},"is_retracted":false,"is_paratext":false,"is_xpac":false,"primary_topic":{"id":"https://openalex.org/T10558","display_name":"Advancements in Semiconductor Devices and Circuit Design","score":0.9911999702453613,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},"topics":[{"id":"https://openalex.org/T10558","display_name":"Advancements in Semiconductor Devices and Circuit Design","score":0.9911999702453613,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T10472","display_name":"Semiconductor materials and devices","score":0.006899999920278788,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T10275","display_name":"2D Materials and Applications","score":0.00019999999494757503,"subfield":{"id":"https://openalex.org/subfields/2505","display_name":"Materials Chemistry"},"field":{"id":"https://openalex.org/fields/25","display_name":"Materials Science"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}}],"keywords":[{"id":"https://openalex.org/keywords/trap-assisted-tunneling","display_name":"trap-assisted tunneling","score":0.9359999895095825},{"id":"https://openalex.org/keywords/interface-states","display_name":"interface states","score":0.8389999866485596},{"id":"https://openalex.org/keywords/off-state-leakage-current","display_name":"off-state leakage current","score":0.6150000095367432},{"id":"https://openalex.org/keywords/subthreshold-swing","display_name":"subthreshold swing","score":0.753000020980835},{"id":"https://openalex.org/keywords/quantum-transport-simulation","display_name":"quantum transport simulation","score":0.8709999918937683},{"id":"https://openalex.org/keywords/on-off-ratio","display_name":"on/off current ratio","score":0.7450000047683716},{"id":"https://openalex.org/keywords/trap-density","display_name":"trap density","score":0.3709999918937683},{"id":"https://openalex.org/keywords/leakage-current","display_name":"leakage current","score":0.5690000057220459}],"concepts":[{"id":"https://openalex.org/C120398109","wikidata":"https://www.wikidata.org/wiki/Q175751","display_name":"Quantum tunnelling","level":2,"score":0.743061900138855},{"id":"https://openalex.org/C2775945429","wikidata":"https://www.wikidata.org/wiki/Q17139821","display_name":"Tunnel field-effect transistor","level":5,"score":0.7300326228141785},{"id":"https://openalex.org/C2982823382","wikidata":"https://www.wikidata.org/wiki/Q7632226","display_name":"Subthreshold swing","level":5,"score":0.595231294631958},{"id":"https://openalex.org/C145148216","wikidata":"https://www.wikidata.org/wiki/Q36496","display_name":"Ion","level":2,"score":0.5706150531768799},{"id":"https://openalex.org/C172385210","wikidata":"https://www.wikidata.org/wiki/Q5339","display_name":"Transistor","level":3,"score":0.538817822933197},{"id":"https://openalex.org/C192562407","wikidata":"https://www.wikidata.org/wiki/Q228736","display_name":"Materials science","level":0,"score":0.5380403995513916},{"id":"https://openalex.org/C145598152","wikidata":"https://www.wikidata.org/wiki/Q176097","display_name":"Field-effect transistor","level":4,"score":0.4960828721523285},{"id":"https://openalex.org/C2777042071","wikidata":"https://www.wikidata.org/wiki/Q6509304","display_name":"Leakage (economics)","level":2,"score":0.4568099081516266},{"id":"https://openalex.org/C49040817","wikidata":"https://www.wikidata.org/wiki/Q193091","display_name":"Optoelectronics","level":1,"score":0.38636747002601624},{"id":"https://openalex.org/C184779094","wikidata":"https://www.wikidata.org/wiki/Q26383","display_name":"Atomic physics","level":1,"score":0.35546261072158813},{"id":"https://openalex.org/C121332964","wikidata":"https://www.wikidata.org/wiki/Q413","display_name":"Physics","level":0,"score":0.25226134061813354},{"id":"https://openalex.org/C165801399","wikidata":"https://www.wikidata.org/wiki/Q25428","display_name":"Voltage","level":2,"score":0.12920120358467102},{"id":"https://openalex.org/C62520636","wikidata":"https://www.wikidata.org/wiki/Q944","display_name":"Quantum mechanics","level":1,"score":0.07911834120750427},{"id":"https://openalex.org/C162324750","wikidata":"https://www.wikidata.org/wiki/Q8134","display_name":"Economics","level":0,"score":0.0},{"id":"https://openalex.org/C139719470","wikidata":"https://www.wikidata.org/wiki/Q39680","display_name":"Macroeconomics","level":1,"score":0.0}],"mesh":[],"locations_count":1,"locations":[{"id":"doi:10.1063/1.5018737","doi":"https://doi.org/10.1063/1.5018737","is_oa":false,"landing_page_url":"https://doi.org/10.1063/1.5018737","pdf_url":null,"source":{"id":"https://openalex.org/S187991544","display_name":"Journal of Applied Physics","issn_l":"0021-8979","issn":["0021-8979","1089-7550","1520-8850"],"is_oa":false,"is_in_doaj":false,"is_core":true,"listed_in":["anvur-scientific","cwts-core","dongbi-d","jufo-1","norway-1","poland-100","russia-white-list-1","vabb-shw"],"host_organization":"https://openalex.org/P4310320257","host_organization_name":"American Institute of Physics","host_organization_lineage":["https://openalex.org/P4310320257"],"host_organization_lineage_names":["American Institute of Physics"],"type":"journal"},"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"Journal of Applied Physics","raw_type":"journal-article"}],"best_oa_location":null,"sustainable_development_goals":[],"study_designs":[],"awards":[{"id":"https://openalex.org/G1057098149","display_name":null,"funder_award_id":"2016-EP-2694-C","funder_id":"https://openalex.org/F4320306087","funder_display_name":"Semiconductor Research Corporation"},{"id":"https://openalex.org/G3126368429","display_name":"Accelerating Nano-scale Transistor Innovation though Petascale Simulation","funder_award_id":"0749140","funder_id":"https://openalex.org/F4320306076","funder_display_name":"National Science Foundation"},{"id":"https://openalex.org/G4812656996","display_name":"E2CDA: Type I: Collaborative Research: A Fast 70mV Transistor Technology for Ultra-Low-Energy Computing","funder_award_id":"1639958","funder_id":"https://openalex.org/F4320306076","funder_display_name":"National Science Foundation"},{"id":"https://openalex.org/G7408659667","display_name":"Collaborative Research: nm Electron Wave Devices for Low-Power VLSI Electronics","funder_award_id":"1509394","funder_id":"https://openalex.org/F4320306076","funder_display_name":"National Science Foundation"}],"funders":[{"id":"https://openalex.org/F4320306076","display_name":"National Science Foundation","ror":"https://ror.org/021nxhr62"},{"id":"https://openalex.org/F4320306087","display_name":"Semiconductor Research Corporation","ror":"https://ror.org/047z4n946"}],"has_content":{"pdf":false,"grobid_xml":false},"content_urls":null,"referenced_works_count":33,"referenced_works":["https://openalex.org/W1722904894","https://openalex.org/W1966518304","https://openalex.org/W1978179394","https://openalex.org/W1978392299","https://openalex.org/W1994722085","https://openalex.org/W2004475047","https://openalex.org/W2014542950","https://openalex.org/W2039610626","https://openalex.org/W2047404464","https://openalex.org/W2047700605","https://openalex.org/W2049544172","https://openalex.org/W2057247890","https://openalex.org/W2062559899","https://openalex.org/W2063351241","https://openalex.org/W2076250333","https://openalex.org/W2078066929","https://openalex.org/W2085155025","https://openalex.org/W2094436837","https://openalex.org/W2109471502","https://openalex.org/W2114847300","https://openalex.org/W2127053724","https://openalex.org/W2129688999","https://openalex.org/W2132641757","https://openalex.org/W2155572196","https://openalex.org/W2164154771","https://openalex.org/W2304495689","https://openalex.org/W2525006079","https://openalex.org/W2527669825","https://openalex.org/W2560044636","https://openalex.org/W2571023931","https://openalex.org/W2607128557","https://openalex.org/W2763869278","https://openalex.org/W3101010189"],"related_works":["https://openalex.org/W3101010189","https://openalex.org/W2174522777","https://openalex.org/W2509835254","https://openalex.org/W2510106732","https://openalex.org/W2515720775","https://openalex.org/W2780238683","https://openalex.org/W6986728217","https://openalex.org/W2810038870","https://openalex.org/W3016176239","https://openalex.org/W1966227433"],"abstract_inverted_index":{"Tunnel":[0],"Field":[1],"Effect":[2],"Transistors":[3],"(FETs)":[4],"have":[5,161],"the":[6,34,70,77,81,86,94,110,124,130,155,168],"potential":[7,112],"to":[8,28,66,123,160,176],"achieve":[9],"steep":[10],"Subthreshold":[11],"Swing":[12],"(S.S.)":[13],"below":[14],"60":[15],"mV/dec,":[16],"but":[17],"their":[18],"S.S.":[19],"could":[20],"be":[21,174],"limited":[22],"by":[23],"trap-assisted":[24],"tunneling":[25],"(TAT)":[26],"due":[27],"interface":[29],"traps.":[30],"In":[31,158],"this":[32,118],"paper,":[33],"effect":[35],"of":[36,44,88,127,154],"trap":[37,53],"energy":[38,63],"and":[39,103],"location":[40],"on":[41],"OFF-current":[42],"(IOFF)":[43],"tunnel":[45,133,156],"FETs":[46],"is":[47,146],"evaluated":[48],"systematically":[49],"using":[50],"an":[51,162],"atomistic":[52],"level":[54],"representation":[55],"in":[56,129,132],"a":[57,105,150],"full":[58],"quantum":[59],"transport":[60],"simulation.":[61],"Trap":[62],"levels":[64],"close":[65],"band":[67],"edges":[68],"cause":[69],"highest":[71],"leakage.":[72],"Wave":[73],"function":[74],"penetration":[75],"into":[76],"surrounding":[78],"oxide":[79],"increases":[80],"TAT":[82,128],"current.":[83],"To":[84],"estimate":[85],"effects":[87],"multiple":[89],"traps,":[90],"we":[91],"assume":[92],"that":[93,115,138],"traps":[95],"themselves":[96],"do":[97,107],"not":[98,108],"interact":[99],"with":[100,149],"each":[101],"other":[102],"as":[104],"whole":[106],"modify":[109],"electrostatic":[111],"dramatically.":[113],"Within":[114],"model":[116,136],"limitation,":[117],"numerical":[119],"metrology":[120],"study":[121],"points":[122],"critical":[125],"importance":[126],"IOFF":[131,145],"FETs.":[134],"The":[135],"shows":[137],"for":[139],"Dit":[140,170],"higher":[141,165],"than":[142,166,179],"1012/(cm2":[143,180],"eV)":[144],"critically":[147],"increased":[148],"degraded":[151],"ION/IOFF":[152,163],"ratio":[153,164],"FET.":[157],"order":[159],"104,":[167],"acceptable":[169],"near":[171],"Ev":[172],"should":[173],"controlled":[175],"no":[177],"larger":[178],"eV).":[181]},"counts_by_year":[{"year":2022,"cited_by_count":3},{"year":2021,"cited_by_count":2},{"year":2020,"cited_by_count":2},{"year":2018,"cited_by_count":1}],"updated_date":"2026-11-07T11:25:07.637180","created_date":"2018-05-17T00:00:00"}