{"id":"https://openalex.org/W2777048608","doi":"https://doi.org/10.1109/icsj.2017.8240105","title":"Enhanced breakdown voltage for all-SiC modules","display_name":"Enhanced breakdown voltage for all-SiC modules","publication_year":2017,"publication_date":"2017-11-01","ids":{"openalex":"https://openalex.org/W2777048608","doi":"https://doi.org/10.1109/icsj.2017.8240105","mag":"2777048608"},"language":"en","primary_location":{"id":"doi:10.1109/icsj.2017.8240105","doi":"https://doi.org/10.1109/icsj.2017.8240105","is_oa":false,"landing_page_url":"https://doi.org/10.1109/icsj.2017.8240105","pdf_url":null,"source":{"id":"https://openalex.org/S7407086767","display_name":"IEEE CPMT Symposium Japan (ICSJ)","issn_l":null,"issn":null,"is_oa":false,"is_in_doaj":false,"is_core":false,"listed_in":[],"host_organization":null,"host_organization_name":null,"host_organization_lineage":[],"host_organization_lineage_names":[],"type":"conference"},"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"2017 IEEE CPMT Symposium Japan (ICSJ)","raw_type":"proceedings-article"},"volume":null,"type":"conference-paper","is_traditional":true,"indexed_in":["crossref"],"open_access":{"is_oa":false,"oa_status":"closed","oa_url":null,"any_repository_has_fulltext":false},"authorships":[{"author_position":"first","author":{"id":"https://openalex.org/A5110539049","display_name":"Motohito Hori","orcid":null,"observed_orcids":[]},"institutions":[{"id":"https://openalex.org/I2799635668","display_name":"Fuji Electric (Japan)","ror":"https://ror.org/056701b75","country_code":"JP","type":"company","lineage":["https://openalex.org/I2799635668"]}],"countries":["JP"],"is_corresponding":false,"raw_author_name":"Motohito Hori","raw_affiliation_strings":["Fuji Electric Co., Ltd, Matsumoto, Nagano, Japan"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Fuji Electric Co., Ltd, Matsumoto, Nagano, Japan","institution_ids":["https://openalex.org/I2799635668"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5054863392","display_name":"Yuichiro Hinata","orcid":null,"observed_orcids":[]},"institutions":[{"id":"https://openalex.org/I2799635668","display_name":"Fuji Electric (Japan)","ror":"https://ror.org/056701b75","country_code":"JP","type":"company","lineage":["https://openalex.org/I2799635668"]}],"countries":["JP"],"is_corresponding":false,"raw_author_name":"Yuichiro Hinata","raw_affiliation_strings":["Fuji Electric Co., Ltd, Matsumoto, Nagano, Japan"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Fuji Electric Co., Ltd, Matsumoto, Nagano, Japan","institution_ids":["https://openalex.org/I2799635668"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5110515407","display_name":"Katsumi Taniguchi","orcid":null,"observed_orcids":[]},"institutions":[{"id":"https://openalex.org/I2799635668","display_name":"Fuji Electric (Japan)","ror":"https://ror.org/056701b75","country_code":"JP","type":"company","lineage":["https://openalex.org/I2799635668"]}],"countries":["JP"],"is_corresponding":false,"raw_author_name":"Katsumi Taniguchi","raw_affiliation_strings":["Fuji Electric Co., Ltd, Matsumoto, Nagano, Japan"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Fuji Electric Co., Ltd, Matsumoto, Nagano, Japan","institution_ids":["https://openalex.org/I2799635668"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5079290368","display_name":"Yoshinari Ikeda","orcid":"https://orcid.org/0009-0003-9995-6095","observed_orcids":["https://orcid.org/0009-0003-9995-6095"]},"institutions":[{"id":"https://openalex.org/I2799635668","display_name":"Fuji Electric (Japan)","ror":"https://ror.org/056701b75","country_code":"JP","type":"company","lineage":["https://openalex.org/I2799635668"]}],"countries":["JP"],"is_corresponding":false,"raw_author_name":"Yoshinari Ikeda","raw_affiliation_strings":["Fuji Electric Co., Ltd, Matsumoto, Nagano, Japan"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Fuji Electric Co., Ltd, Matsumoto, Nagano, Japan","institution_ids":["https://openalex.org/I2799635668"]}]},{"author_position":"last","author":{"id":"https://openalex.org/A5101772261","display_name":"Yoshikazu Takahashi","orcid":"https://orcid.org/0009-0005-2435-5142","observed_orcids":["https://orcid.org/0009-0005-2435-5142"]},"institutions":[{"id":"https://openalex.org/I2799635668","display_name":"Fuji Electric (Japan)","ror":"https://ror.org/056701b75","country_code":"JP","type":"company","lineage":["https://openalex.org/I2799635668"]}],"countries":["JP"],"is_corresponding":false,"raw_author_name":"Yoshikazu Takahashi","raw_affiliation_strings":["Fuji Electric Co., Ltd, Matsumoto, Nagano, Japan"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Fuji Electric Co., Ltd, Matsumoto, Nagano, Japan","institution_ids":["https://openalex.org/I2799635668"]}]}],"institutions":[],"countries_distinct_count":1,"institutions_distinct_count":1,"corresponding_author_ids":[],"corresponding_institution_ids":["https://openalex.org/I2799635668"],"apc_list":null,"apc_paid":null,"fwci":1.5495,"has_fulltext":false,"cited_by_count":5,"citation_normalized_percentile":{"value":0.77835136,"is_in_top_1_percent":false,"is_in_top_10_percent":false},"cited_by_percentile_year":{"min":88,"max":97},"biblio":{"volume":null,"issue":null,"first_page":"127","last_page":"130"},"is_retracted":false,"is_paratext":false,"is_xpac":false,"primary_topic":{"id":"https://openalex.org/T10361","display_name":"Silicon Carbide Semiconductor Technologies","score":1.0,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},"topics":[{"id":"https://openalex.org/T10361","display_name":"Silicon Carbide Semiconductor Technologies","score":1.0,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T10099","display_name":"GaN-based semiconductor devices and materials","score":0.0,"subfield":{"id":"https://openalex.org/subfields/3104","display_name":"Condensed Matter Physics"},"field":{"id":"https://openalex.org/fields/31","display_name":"Physics and Astronomy"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T10132","display_name":"Advanced ceramic materials synthesis","score":0.0,"subfield":{"id":"https://openalex.org/subfields/2503","display_name":"Ceramics and Composites"},"field":{"id":"https://openalex.org/fields/25","display_name":"Materials Science"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}}],"keywords":[{"id":"https://openalex.org/keywords/silicon-carbide","display_name":"silicon carbide","score":0.8399999737739563},{"id":"https://openalex.org/keywords/sic-power-modules","display_name":"SiC power modules","score":0.7680000066757202},{"id":"https://openalex.org/keywords/breakdown-voltage","display_name":"breakdown voltage","score":0.824999988079071},{"id":"https://openalex.org/keywords/power-module-packaging","display_name":"power module packaging","score":0.609000027179718},{"id":"https://openalex.org/keywords/high-voltage-power-electronics","display_name":"high-voltage power electronics","score":0.6510000228881836},{"id":"https://openalex.org/keywords/electric-vehicles","display_name":"electric vehicles","score":0.6970000267028809}],"concepts":[{"id":"https://openalex.org/C119321828","wikidata":"https://www.wikidata.org/wiki/Q1267190","display_name":"Breakdown voltage","level":3,"score":0.7038326263427734},{"id":"https://openalex.org/C43214815","wikidata":"https://www.wikidata.org/wiki/Q7310987","display_name":"Reliability (semiconductor)","level":3,"score":0.6889073848724365},{"id":"https://openalex.org/C165801399","wikidata":"https://www.wikidata.org/wiki/Q25428","display_name":"Voltage","level":2,"score":0.6558437347412109},{"id":"https://openalex.org/C526921623","wikidata":"https://www.wikidata.org/wiki/Q190117","display_name":"Automotive industry","level":2,"score":0.5871393084526062},{"id":"https://openalex.org/C88182573","wikidata":"https://www.wikidata.org/wiki/Q1139740","display_name":"High voltage","level":3,"score":0.5856615304946899},{"id":"https://openalex.org/C192562407","wikidata":"https://www.wikidata.org/wiki/Q228736","display_name":"Materials science","level":0,"score":0.558371901512146},{"id":"https://openalex.org/C2780722187","wikidata":"https://www.wikidata.org/wiki/Q412356","display_name":"Silicon carbide","level":2,"score":0.5553059577941895},{"id":"https://openalex.org/C119599485","wikidata":"https://www.wikidata.org/wiki/Q43035","display_name":"Electrical engineering","level":1,"score":0.5112400054931641},{"id":"https://openalex.org/C2984221369","wikidata":"https://www.wikidata.org/wiki/Q422584","display_name":"Electric breakdown","level":3,"score":0.49679115414619446},{"id":"https://openalex.org/C189278905","wikidata":"https://www.wikidata.org/wiki/Q2157708","display_name":"Wide-bandgap semiconductor","level":2,"score":0.43185582756996155},{"id":"https://openalex.org/C49040817","wikidata":"https://www.wikidata.org/wiki/Q193091","display_name":"Optoelectronics","level":1,"score":0.4153406620025635},{"id":"https://openalex.org/C171146098","wikidata":"https://www.wikidata.org/wiki/Q124192","display_name":"Automotive engineering","level":1,"score":0.3892554044723511},{"id":"https://openalex.org/C61696701","wikidata":"https://www.wikidata.org/wiki/Q770766","display_name":"Engineering physics","level":1,"score":0.342252254486084},{"id":"https://openalex.org/C127413603","wikidata":"https://www.wikidata.org/wiki/Q11023","display_name":"Engineering","level":0,"score":0.28712910413742065},{"id":"https://openalex.org/C163258240","wikidata":"https://www.wikidata.org/wiki/Q25342","display_name":"Power (physics)","level":2,"score":0.1183476448059082},{"id":"https://openalex.org/C159985019","wikidata":"https://www.wikidata.org/wiki/Q181790","display_name":"Composite material","level":1,"score":0.08957734704017639},{"id":"https://openalex.org/C121332964","wikidata":"https://www.wikidata.org/wiki/Q413","display_name":"Physics","level":0,"score":0.07523706555366516},{"id":"https://openalex.org/C62520636","wikidata":"https://www.wikidata.org/wiki/Q944","display_name":"Quantum mechanics","level":1,"score":0.0},{"id":"https://openalex.org/C146978453","wikidata":"https://www.wikidata.org/wiki/Q3798668","display_name":"Aerospace engineering","level":1,"score":0.0}],"mesh":[],"locations_count":1,"locations":[{"id":"doi:10.1109/icsj.2017.8240105","doi":"https://doi.org/10.1109/icsj.2017.8240105","is_oa":false,"landing_page_url":"https://doi.org/10.1109/icsj.2017.8240105","pdf_url":null,"source":{"id":"https://openalex.org/S7407086767","display_name":"IEEE CPMT Symposium Japan (ICSJ)","issn_l":null,"issn":null,"is_oa":false,"is_in_doaj":false,"is_core":false,"listed_in":[],"host_organization":null,"host_organization_name":null,"host_organization_lineage":[],"host_organization_lineage_names":[],"type":"conference"},"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"2017 IEEE CPMT Symposium Japan (ICSJ)","raw_type":"proceedings-article"}],"best_oa_location":null,"sustainable_development_goals":[{"id":"https://metadata.un.org/sdg/9","display_name":"Industry, innovation and infrastructure","score":1.0}],"study_designs":[],"awards":[],"funders":[],"has_content":{"pdf":false,"grobid_xml":false},"content_urls":null,"referenced_works_count":2,"referenced_works":["https://openalex.org/W2053389350","https://openalex.org/W2117186315"],"related_works":["https://openalex.org/W2811267924","https://openalex.org/W4226159039","https://openalex.org/W4293566086","https://openalex.org/W3192208602","https://openalex.org/W4378843008","https://openalex.org/W4408786851","https://openalex.org/W4223585602","https://openalex.org/W3046796098","https://openalex.org/W4417187126","https://openalex.org/W2021248929"],"abstract_inverted_index":{"SiC":[0],"devices":[1],"are":[2],"expected":[3],"to":[4,18],"be":[5],"used":[6],"in":[7],"high":[8,30],"voltage":[9,15,48],"fields":[10],"that":[11,28],"require":[12,29],"a":[13],"breakdown":[14,47],"from":[16],"3":[17],"10kV":[19],"such":[20,32],"as":[21,23,25,33],"railways,":[22],"well":[24],"the":[26,42],"automotive":[27],"reliability":[31],"hybrid":[34],"vehicles":[35],"and":[36],"electric":[37],"vehicles.":[38],"This":[39],"paper":[40],"presents":[41],"packaging":[43],"technologies":[44],"of":[45],"enhanced":[46],"for":[49],"All-SiC":[50],"modules.":[51]},"counts_by_year":[{"year":2023,"cited_by_count":1},{"year":2019,"cited_by_count":1},{"year":2018,"cited_by_count":3}],"updated_date":"2026-10-16T09:59:22.235173","created_date":"2018-01-05T00:00:00"}