{"id":"https://openalex.org/W2774542542","doi":null,"title":"Analytical Characterization of unipolar diode based on Transistor Channels model","display_name":"Analytical Characterization of unipolar diode based on Transistor Channels model","publication_year":2017,"publication_date":"2017-01-01","ids":{"openalex":"https://openalex.org/W2774542542","mag":"2774542542"},"language":"en","primary_location":{"id":"pmh:oai:HAL:hal-02055194v1","doi":null,"is_oa":false,"landing_page_url":"https://hal.science/hal-02055194","pdf_url":null,"source":{"id":"https://openalex.org/S4306402512","display_name":"HAL","issn_l":null,"issn":null,"is_oa":false,"is_in_doaj":false,"is_core":false,"listed_in":[],"host_organization":"https://openalex.org/I4405252976","host_organization_name":"Centre pour la Communication Scientifique Directe","host_organization_lineage":["https://openalex.org/I4405252976"],"host_organization_lineage_names":[],"type":"repository"},"license":null,"license_id":null,"version":"submittedVersion","is_accepted":false,"is_published":false,"raw_source_name":"WSEAS Transactions on circuits and systems, 2017, 16, pp.1-7","raw_type":"info:eu-repo/semantics/article"},"volume":null,"type":"article","is_traditional":true,"indexed_in":[],"open_access":{"is_oa":false,"oa_status":"closed","oa_url":null,"any_repository_has_fulltext":false},"authorships":[{"author_position":"first","author":{"id":"https://openalex.org/A5030199141","display_name":"Fatima Zohra Mahi","orcid":"https://orcid.org/0000-0003-4238-8181","observed_orcids":["https://orcid.org/0000-0003-4238-8181"]},"institutions":[{"id":"https://openalex.org/I143936627","display_name":"University of Bechar","ror":"https://ror.org/035145p50","country_code":"DZ","type":"education","lineage":["https://openalex.org/I143936627"]}],"countries":["DZ"],"is_corresponding":false,"raw_author_name":"Mahi, Fatima, Zohra","raw_affiliation_strings":["Institute of Science and Technology, University of Bechar"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Institute of Science and Technology, University of Bechar","institution_ids":["https://openalex.org/I143936627"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5018845854","display_name":"Abdel Majid Mammeri","orcid":null,"observed_orcids":[]},"institutions":[{"id":"https://openalex.org/I143936627","display_name":"University of Bechar","ror":"https://ror.org/035145p50","country_code":"DZ","type":"education","lineage":["https://openalex.org/I143936627"]}],"countries":["DZ"],"is_corresponding":false,"raw_author_name":"Mammeri, A. Majid","raw_affiliation_strings":["Institute of Science and Technology, University of Bechar"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Institute of Science and Technology, University of Bechar","institution_ids":["https://openalex.org/I143936627"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5023276792","display_name":"Hugues Marinchio","orcid":null,"observed_orcids":[]},"institutions":[{"id":"https://openalex.org/I4210134800","display_name":"Institut d'\u00c9lectronique et des Syst\u00e8mes","ror":"https://ror.org/0431hh004","country_code":"FR","type":"facility","lineage":["https://openalex.org/I1294671590","https://openalex.org/I19894307","https://openalex.org/I4210095849","https://openalex.org/I4210134800"]}],"countries":["FR"],"is_corresponding":false,"raw_author_name":"Marinchio, H.","raw_affiliation_strings":["Institut d\u2019Electronique et des Syst\u00e8mes"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Institut d\u2019Electronique et des Syst\u00e8mes","institution_ids":["https://openalex.org/I4210134800"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5109370647","display_name":"C. Palermo","orcid":null,"observed_orcids":[]},"institutions":[{"id":"https://openalex.org/I4210134800","display_name":"Institut d'\u00c9lectronique et des Syst\u00e8mes","ror":"https://ror.org/0431hh004","country_code":"FR","type":"facility","lineage":["https://openalex.org/I1294671590","https://openalex.org/I19894307","https://openalex.org/I4210095849","https://openalex.org/I4210134800"]}],"countries":["FR"],"is_corresponding":false,"raw_author_name":"Palermo, C.","raw_affiliation_strings":["Institut d\u2019Electronique et des Syst\u00e8mes"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Institut d\u2019Electronique et des Syst\u00e8mes","institution_ids":["https://openalex.org/I4210134800"]}]},{"author_position":"last","author":{"id":"https://openalex.org/A5089544144","display_name":"Luca Varani","orcid":"https://orcid.org/0000-0002-3085-9997","observed_orcids":["https://orcid.org/0000-0002-3085-9997"]},"institutions":[{"id":"https://openalex.org/I4210134800","display_name":"Institut d'\u00c9lectronique et des Syst\u00e8mes","ror":"https://ror.org/0431hh004","country_code":"FR","type":"facility","lineage":["https://openalex.org/I1294671590","https://openalex.org/I19894307","https://openalex.org/I4210095849","https://openalex.org/I4210134800"]}],"countries":["FR"],"is_corresponding":false,"raw_author_name":"Varani, L.","raw_affiliation_strings":["Institut d\u2019Electronique et des Syst\u00e8mes"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Institut d\u2019Electronique et des Syst\u00e8mes","institution_ids":["https://openalex.org/I4210134800"]}]}],"institutions":[],"countries_distinct_count":2,"institutions_distinct_count":2,"corresponding_author_ids":[],"corresponding_institution_ids":[],"apc_list":null,"apc_paid":null,"fwci":0.0,"has_fulltext":false,"cited_by_count":0,"citation_normalized_percentile":{"value":0.0,"is_in_top_1_percent":false,"is_in_top_10_percent":false},"cited_by_percentile_year":null,"biblio":{"volume":"16","issue":null,"first_page":"1","last_page":"7"},"is_retracted":false,"is_paratext":false,"is_xpac":false,"primary_topic":{"id":"https://openalex.org/T10752","display_name":"Terahertz technology and applications","score":0.4787999987602234,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},"topics":[{"id":"https://openalex.org/T10752","display_name":"Terahertz technology and applications","score":0.4787999987602234,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T10558","display_name":"Advancements in Semiconductor Devices and Circuit Design","score":0.19900000095367432,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T11803","display_name":"Superconducting and THz Device Technology","score":0.14560000598430634,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}}],"keywords":[{"id":"https://openalex.org/keywords/ingaas","display_name":"InGaAs","score":0.7310000061988831},{"id":"https://openalex.org/keywords/small-signal-admittance","display_name":"small-signal admittance","score":0.9660000205039978},{"id":"https://openalex.org/keywords/plasma-waves","display_name":"plasma waves","score":0.6890000104904175},{"id":"https://openalex.org/keywords/resonance-peaks","display_name":"resonance peaks","score":0.7329999804496765},{"id":"https://openalex.org/keywords/terahertz-detection","display_name":"terahertz detection","score":0.7839999794960022},{"id":"https://openalex.org/keywords/device-geometry","display_name":"device geometry","score":0.4909999966621399},{"id":"https://openalex.org/keywords/operating-temperature","display_name":"operating temperature","score":0.6629999876022339}],"concepts":[{"id":"https://openalex.org/C172385210","wikidata":"https://www.wikidata.org/wiki/Q5339","display_name":"Transistor","level":3,"score":0.6783533692359924},{"id":"https://openalex.org/C133833761","wikidata":"https://www.wikidata.org/wiki/Q16001847","display_name":"Admittance parameters","level":3,"score":0.6434133052825928},{"id":"https://openalex.org/C108811297","wikidata":"https://www.wikidata.org/wiki/Q214518","display_name":"Admittance","level":3,"score":0.5491771697998047},{"id":"https://openalex.org/C78434282","wikidata":"https://www.wikidata.org/wiki/Q11656","display_name":"Diode","level":2,"score":0.49904656410217285},{"id":"https://openalex.org/C102380595","wikidata":"https://www.wikidata.org/wiki/Q509598","display_name":"Susceptance","level":3,"score":0.47109636664390564},{"id":"https://openalex.org/C23572009","wikidata":"https://www.wikidata.org/wiki/Q964981","display_name":"Equivalent circuit","level":3,"score":0.4396977722644806},{"id":"https://openalex.org/C121332964","wikidata":"https://www.wikidata.org/wiki/Q413","display_name":"Physics","level":0,"score":0.43832919001579285},{"id":"https://openalex.org/C2779843651","wikidata":"https://www.wikidata.org/wiki/Q7390335","display_name":"SIGNAL (programming language)","level":2,"score":0.43555986881256104},{"id":"https://openalex.org/C49040817","wikidata":"https://www.wikidata.org/wiki/Q193091","display_name":"Optoelectronics","level":1,"score":0.39254263043403625},{"id":"https://openalex.org/C192562407","wikidata":"https://www.wikidata.org/wiki/Q228736","display_name":"Materials science","level":0,"score":0.356120765209198},{"id":"https://openalex.org/C165801399","wikidata":"https://www.wikidata.org/wiki/Q25428","display_name":"Voltage","level":2,"score":0.1847400665283203},{"id":"https://openalex.org/C41008148","wikidata":"https://www.wikidata.org/wiki/Q21198","display_name":"Computer science","level":0,"score":0.1663188636302948},{"id":"https://openalex.org/C17829176","wikidata":"https://www.wikidata.org/wiki/Q179043","display_name":"Electrical impedance","level":2,"score":0.14301460981369019},{"id":"https://openalex.org/C62520636","wikidata":"https://www.wikidata.org/wiki/Q944","display_name":"Quantum mechanics","level":1,"score":0.09028944373130798},{"id":"https://openalex.org/C199360897","wikidata":"https://www.wikidata.org/wiki/Q9143","display_name":"Programming language","level":1,"score":0.0}],"mesh":[],"locations_count":1,"locations":[{"id":"pmh:oai:HAL:hal-02055194v1","doi":null,"is_oa":false,"landing_page_url":"https://hal.science/hal-02055194","pdf_url":null,"source":{"id":"https://openalex.org/S4306402512","display_name":"HAL","issn_l":null,"issn":null,"is_oa":false,"is_in_doaj":false,"is_core":false,"listed_in":[],"host_organization":"https://openalex.org/I4405252976","host_organization_name":"Centre pour la Communication Scientifique Directe","host_organization_lineage":["https://openalex.org/I4405252976"],"host_organization_lineage_names":[],"type":"repository"},"license":null,"license_id":null,"version":"submittedVersion","is_accepted":false,"is_published":false,"raw_source_name":"WSEAS Transactions on circuits and systems, 2017, 16, pp.1-7","raw_type":"info:eu-repo/semantics/article"}],"best_oa_location":null,"sustainable_development_goals":[],"study_designs":[],"awards":[],"funders":[],"has_content":{"grobid_xml":false,"pdf":false},"content_urls":null,"referenced_works_count":1,"referenced_works":["https://openalex.org/W1513146084"],"related_works":["https://openalex.org/W2765137995","https://openalex.org/W4299291900","https://openalex.org/W2768845023","https://openalex.org/W2055509662","https://openalex.org/W1613558190","https://openalex.org/W2167463828","https://openalex.org/W749995747","https://openalex.org/W1636270933","https://openalex.org/W7100540473","https://openalex.org/W2033898739"],"abstract_inverted_index":{"In":[0],"this":[1],"paper,":[2],"we":[3],"propose":[4],"an":[5],"analytical":[6,62],"approach":[7],"for":[8,192],"the":[9,20,27,35,42,50,54,58,67,70,80,84,86,92,95,99,102,111,115,126,137,145,152,158,171,174,183,187,193],"small-signal":[10,36,103,120],"response":[11],"of":[12,34,53,79,101,114,132,139,144,151,173,186],"nanometric":[13],"InGaAs":[14,188],"diode":[15,191],"which":[16],"is":[17,29,147],"extracted":[18],"to":[19,136,169,181],"transistor":[21,189],"model":[22,63,162],"in":[23],"ref":[24],"[1]":[25],"when":[26],"gate":[28,93],"taking":[30],"away.":[31],"The":[32,61,106,122,142,161],"exploitation":[33],"equivalent":[37],"circuit":[38],"elements":[39],"such":[40],"as":[41,149],"admittance":[43,104,117,127],"parameters":[44],"can":[45,163],"give":[46],"significant":[47],"information":[48],"about":[49],"noise":[51,107,184],"level":[52,185],"devices":[55],"by":[56,109],"using":[57,110],"Nyquist":[59],"relation.":[60],"takes":[64],"into":[65],"account":[66],"longitudinal":[68],"and":[69,94,157,177,190],"transverse":[71],"electric":[72],"fields":[73],"through":[74],"a":[75,119,130],"pseudo":[76],"two-dimensional":[77],"approximation":[78],"Poisson":[81],"equation.":[82],"For":[83],"transistor,":[85],"total":[87],"currents-potentials":[88],"matrix":[89],"relation":[90],"between":[91],"drain":[96],"terminals":[97],"determine":[98,182],"frequency-dependent":[100],"response.":[105],"calculated":[108],"real":[112],"part":[113],"transistor/diode":[116],"under":[118],"perturbation.":[121],"results":[123],"show":[124],"that":[125],"spectrum":[128],"exhibits":[129],"series":[131],"resonant":[133],"peaks":[134],"corresponding":[135],"excitation":[138],"plasma":[140,175],"waves.":[141],"appearance":[143,172],"resonance":[146],"discussed":[148],"functions":[150],"device":[153],"geometry":[154],"(devices":[155],"length)":[156],"operating":[159],"temperature.":[160],"be":[164],"used,":[165],"on":[166,178],"one":[167],"hand;":[168,180],"control":[170],"resonances,":[176],"other":[179],"terahertz":[194],"detection.":[195]},"counts_by_year":[],"updated_date":"2026-11-08T12:12:28.789561","created_date":"2017-12-22T00:00:00"}