{"id":"https://openalex.org/W2755259986","doi":"https://doi.org/10.1021/acs.chemmater.7b01236","title":"Atomic Layer Deposition of GeTe and Ge\u2013Sb\u2013Te Films Using HGeCl3, Sb(OC2H5)3, and {(CH3)3Si}2Te and Their Reaction Mechanisms","display_name":"Atomic Layer Deposition of GeTe and Ge\u2013Sb\u2013Te Films Using HGeCl3, Sb(OC2H5)3, and {(CH3)3Si}2Te and Their Reaction Mechanisms","publication_year":2017,"publication_date":"2017-09-20","ids":{"openalex":"https://openalex.org/W2755259986","doi":"https://doi.org/10.1021/acs.chemmater.7b01236","mag":"2755259986"},"language":"en","primary_location":{"id":"doi:10.1021/acs.chemmater.7b01236","doi":"https://doi.org/10.1021/acs.chemmater.7b01236","is_oa":false,"landing_page_url":"https://doi.org/10.1021/acs.chemmater.7b01236","pdf_url":null,"source":{"id":"https://openalex.org/S66104727","display_name":"Chemistry of Materials","issn_l":"0897-4756","issn":["0897-4756","1520-5002"],"is_oa":false,"is_in_doaj":false,"is_core":true,"listed_in":["anvur-scientific","cwts-core","dongbi-a","jufo-3","ki-jl-1","norway-2","poland-200","russia-white-list-1","vabb-shw"],"host_organization":"https://openalex.org/P4310320006","host_organization_name":"American Chemical Society","host_organization_lineage":["https://openalex.org/P4310320006"],"host_organization_lineage_names":["American Chemical Society"],"type":"journal"},"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"Chemistry of Materials","raw_type":"journal-article"},"volume":null,"type":"article","is_traditional":true,"indexed_in":["crossref"],"open_access":{"is_oa":false,"oa_status":"closed","oa_url":null,"any_repository_has_fulltext":false},"authorships":[{"author_position":"first","author":{"id":"https://openalex.org/A5020694263","display_name":"Taehong Gwon","orcid":null,"observed_orcids":[]},"institutions":[{"id":"https://openalex.org/I139264467","display_name":"Seoul National University","ror":"https://ror.org/04h9pn542","country_code":"KR","type":"education","lineage":["https://openalex.org/I139264467"]}],"countries":["KR"],"is_corresponding":false,"raw_author_name":"Taehong Gwon","raw_affiliation_strings":["Department\rof Materials Science and Engineering and Inter-University Semiconductor\rResearch Center, Seoul National University, Seoul 151-744, Republic of Korea"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Department\rof Materials Science and Engineering and Inter-University Semiconductor\rResearch Center, Seoul National University, Seoul 151-744, Republic of Korea","institution_ids":["https://openalex.org/I139264467"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5052793863","display_name":"Taeyong Eom","orcid":"https://orcid.org/0000-0002-9646-9553","observed_orcids":["https://orcid.org/0000-0002-9646-9553"]},"institutions":[{"id":"https://openalex.org/I139264467","display_name":"Seoul National University","ror":"https://ror.org/04h9pn542","country_code":"KR","type":"education","lineage":["https://openalex.org/I139264467"]}],"countries":["KR"],"is_corresponding":false,"raw_author_name":"Taeyong Eom","raw_affiliation_strings":["Department\rof Materials Science and Engineering and Inter-University Semiconductor\rResearch Center, Seoul National University, Seoul 151-744, Republic of Korea"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Department\rof Materials Science and Engineering and Inter-University Semiconductor\rResearch Center, Seoul National University, Seoul 151-744, Republic of Korea","institution_ids":["https://openalex.org/I139264467"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5103167097","display_name":"Sijung Yoo","orcid":"https://orcid.org/0000-0002-5013-8564","observed_orcids":["https://orcid.org/0000-0002-5013-8564"]},"institutions":[{"id":"https://openalex.org/I139264467","display_name":"Seoul National University","ror":"https://ror.org/04h9pn542","country_code":"KR","type":"education","lineage":["https://openalex.org/I139264467"]}],"countries":["KR"],"is_corresponding":false,"raw_author_name":"Sijung Yoo","raw_affiliation_strings":["Department\rof Materials Science and Engineering and Inter-University Semiconductor\rResearch Center, Seoul National University, Seoul 151-744, Republic of Korea"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Department\rof Materials Science and Engineering and Inter-University Semiconductor\rResearch Center, Seoul National University, Seoul 151-744, Republic of Korea","institution_ids":["https://openalex.org/I139264467"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5008117265","display_name":"Chanyoung Yoo","orcid":"https://orcid.org/0000-0002-6357-4103","observed_orcids":["https://orcid.org/0000-0002-6357-4103"]},"institutions":[{"id":"https://openalex.org/I139264467","display_name":"Seoul National University","ror":"https://ror.org/04h9pn542","country_code":"KR","type":"education","lineage":["https://openalex.org/I139264467"]}],"countries":["KR"],"is_corresponding":false,"raw_author_name":"Chanyoung Yoo","raw_affiliation_strings":["Department\rof Materials Science and Engineering and Inter-University Semiconductor\rResearch Center, Seoul National University, Seoul 151-744, Republic of Korea"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Department\rof Materials Science and Engineering and Inter-University Semiconductor\rResearch Center, Seoul National University, Seoul 151-744, Republic of Korea","institution_ids":["https://openalex.org/I139264467"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5015595819","display_name":"Eui-Sang Park","orcid":null,"observed_orcids":[]},"institutions":[{"id":"https://openalex.org/I139264467","display_name":"Seoul National University","ror":"https://ror.org/04h9pn542","country_code":"KR","type":"education","lineage":["https://openalex.org/I139264467"]}],"countries":["KR"],"is_corresponding":false,"raw_author_name":"Eui-sang Park","raw_affiliation_strings":["Department\rof Materials Science and Engineering and Inter-University Semiconductor\rResearch Center, Seoul National University, Seoul 151-744, Republic of Korea"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Department\rof Materials Science and Engineering and Inter-University Semiconductor\rResearch Center, Seoul National University, Seoul 151-744, Republic of Korea","institution_ids":["https://openalex.org/I139264467"]}]},{"author_position":"middle","author":{"id":null,"display_name":"Sanggyun Kim","orcid":null,"observed_orcids":[]},"institutions":[{"id":"https://openalex.org/I139264467","display_name":"Seoul National University","ror":"https://ror.org/04h9pn542","country_code":"KR","type":"education","lineage":["https://openalex.org/I139264467"]}],"countries":["KR"],"is_corresponding":false,"raw_author_name":"Sanggyun Kim","raw_affiliation_strings":["Department\rof Materials Science and Engineering and Inter-University Semiconductor\rResearch Center, Seoul National University, Seoul 151-744, Republic of Korea"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Department\rof Materials Science and Engineering and Inter-University Semiconductor\rResearch Center, Seoul National University, Seoul 151-744, Republic of Korea","institution_ids":["https://openalex.org/I139264467"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5000097180","display_name":"Moo\u2010Sung Kim","orcid":null,"observed_orcids":[]},"institutions":[],"countries":[],"is_corresponding":false,"raw_author_name":"Moo-Sung Kim","raw_affiliation_strings":["Versum Materials Korea, 3 Nongseo-Ro, 46 Beon-Gil,\rGiheung-Gu, Yongin City 17113, Republic of Korea"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Versum Materials Korea, 3 Nongseo-Ro, 46 Beon-Gil,\rGiheung-Gu, Yongin City 17113, Republic of Korea","institution_ids":[]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5109283471","display_name":"Iain Buchanan","orcid":null,"observed_orcids":[]},"institutions":[],"countries":[],"is_corresponding":false,"raw_author_name":"Iain Buchanan","raw_affiliation_strings":["Versum Materials, Inc., 1969\rPalomar Oaks Way, Carlsbad, California 92011, United States"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Versum Materials, Inc., 1969\rPalomar Oaks Way, Carlsbad, California 92011, United States","institution_ids":[]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5111703198","display_name":"Manchao Xiao","orcid":null,"observed_orcids":[]},"institutions":[],"countries":[],"is_corresponding":false,"raw_author_name":"Manchao Xiao","raw_affiliation_strings":["Versum Materials, Inc., 1969\rPalomar Oaks Way, Carlsbad, California 92011, United States"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Versum Materials, Inc., 1969\rPalomar Oaks Way, Carlsbad, California 92011, United States","institution_ids":[]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5053316348","display_name":"Sergei A. Ivanov","orcid":"https://orcid.org/0000-0001-6790-5187","observed_orcids":["https://orcid.org/0000-0001-6790-5187"]},"institutions":[],"countries":[],"is_corresponding":false,"raw_author_name":"Sergei Ivanov","raw_affiliation_strings":["Versum Materials, Inc., 1969\rPalomar Oaks Way, Carlsbad, California 92011, United States"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Versum Materials, Inc., 1969\rPalomar Oaks Way, Carlsbad, California 92011, United States","institution_ids":[]}]},{"author_position":"last","author":{"id":"https://openalex.org/A5027075775","display_name":"Cheol Seong Hwang","orcid":"https://orcid.org/0000-0002-6254-9758","observed_orcids":["https://orcid.org/0000-0002-6254-9758"]},"institutions":[{"id":"https://openalex.org/I139264467","display_name":"Seoul National University","ror":"https://ror.org/04h9pn542","country_code":"KR","type":"education","lineage":["https://openalex.org/I139264467"]}],"countries":["KR"],"is_corresponding":true,"raw_author_name":"Cheol Seong Hwang","raw_affiliation_strings":["Department\rof Materials Science and Engineering and Inter-University Semiconductor\rResearch Center, Seoul National University, Seoul 151-744, Republic of Korea"],"raw_orcid":"https://orcid.org/0000-0002-6254-9758","affiliations":[{"raw_affiliation_string":"Department\rof Materials Science and Engineering and Inter-University Semiconductor\rResearch Center, Seoul National University, Seoul 151-744, Republic of Korea","institution_ids":["https://openalex.org/I139264467"]}]}],"institutions":[],"countries_distinct_count":1,"institutions_distinct_count":1,"corresponding_author_ids":["https://openalex.org/A5027075775"],"corresponding_institution_ids":["https://openalex.org/I139264467"],"apc_list":{"value":4500,"currency":"USD","value_usd":4500},"apc_paid":null,"fwci":1.3788,"has_fulltext":false,"cited_by_count":37,"citation_normalized_percentile":{"value":0.79288966,"is_in_top_1_percent":false,"is_in_top_10_percent":false},"cited_by_percentile_year":{"min":88,"max":98},"biblio":{"volume":"29","issue":"19","first_page":"8065","last_page":"8072"},"is_retracted":false,"is_paratext":false,"is_xpac":false,"primary_topic":{"id":"https://openalex.org/T11315","display_name":"Phase-change materials and chalcogenides","score":0.8500999808311462,"subfield":{"id":"https://openalex.org/subfields/2505","display_name":"Materials Chemistry"},"field":{"id":"https://openalex.org/fields/25","display_name":"Materials Science"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},"topics":[{"id":"https://openalex.org/T11315","display_name":"Phase-change materials and chalcogenides","score":0.8500999808311462,"subfield":{"id":"https://openalex.org/subfields/2505","display_name":"Materials Chemistry"},"field":{"id":"https://openalex.org/fields/25","display_name":"Materials Science"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T10472","display_name":"Semiconductor materials and devices","score":0.14259999990463257,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T10590","display_name":"Chalcogenide Semiconductor Thin Films","score":0.0017000000225380063,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}}],"keywords":[{"id":"https://openalex.org/keywords/atomic-layer-deposition","display_name":"atomic layer deposition","score":0.996999979019165},{"id":"https://openalex.org/keywords/gete-thin-films","display_name":"GeTe thin films","score":0.9660000205039978},{"id":"https://openalex.org/keywords/reaction-mechanism","display_name":"reaction mechanism","score":0.7379999756813049},{"id":"https://openalex.org/keywords/phase-change-memory","display_name":"phase-change memory","score":0.722000002861023},{"id":"https://openalex.org/keywords/sb2te3","display_name":"Sb2Te3","score":0.8679999709129333},{"id":"https://openalex.org/keywords/low-temperature-deposition","display_name":"low-temperature deposition","score":0.6880000233650208},{"id":"https://openalex.org/keywords/stoichiometric-composition","display_name":"stoichiometric composition","score":0.6510000228881836}],"concepts":[{"id":"https://openalex.org/C144082473","wikidata":"https://www.wikidata.org/wiki/Q213185","display_name":"Stoichiometry","level":2,"score":0.8301676511764526},{"id":"https://openalex.org/C64452783","wikidata":"https://www.wikidata.org/wiki/Q1524945","display_name":"Ternary operation","level":2,"score":0.7993127703666687},{"id":"https://openalex.org/C69544855","wikidata":"https://www.wikidata.org/wiki/Q757625","display_name":"Atomic layer deposition","level":3,"score":0.7722560167312622},{"id":"https://openalex.org/C2779227376","wikidata":"https://www.wikidata.org/wiki/Q6505497","display_name":"Layer (electronics)","level":2,"score":0.6663455963134766},{"id":"https://openalex.org/C2777289219","wikidata":"https://www.wikidata.org/wiki/Q7632154","display_name":"Substrate (aquarium)","level":2,"score":0.6164225339889526},{"id":"https://openalex.org/C19067145","wikidata":"https://www.wikidata.org/wiki/Q1137203","display_name":"Thin film","level":2,"score":0.5804588794708252},{"id":"https://openalex.org/C192562407","wikidata":"https://www.wikidata.org/wiki/Q228736","display_name":"Materials science","level":0,"score":0.5775007009506226},{"id":"https://openalex.org/C64297162","wikidata":"https://www.wikidata.org/wiki/Q1987070","display_name":"Deposition (geology)","level":3,"score":0.5649797916412354},{"id":"https://openalex.org/C64142963","wikidata":"https://www.wikidata.org/wiki/Q1153902","display_name":"Phase-change memory","level":3,"score":0.4700680375099182},{"id":"https://openalex.org/C8010536","wikidata":"https://www.wikidata.org/wiki/Q160398","display_name":"Crystallography","level":1,"score":0.45514044165611267},{"id":"https://openalex.org/C44280652","wikidata":"https://www.wikidata.org/wiki/Q104837","display_name":"Phase (matter)","level":2,"score":0.44922369718551636},{"id":"https://openalex.org/C113196181","wikidata":"https://www.wikidata.org/wiki/Q485223","display_name":"Analytical Chemistry (journal)","level":2,"score":0.41461506485939026},{"id":"https://openalex.org/C185592680","wikidata":"https://www.wikidata.org/wiki/Q2329","display_name":"Chemistry","level":0,"score":0.27950748801231384},{"id":"https://openalex.org/C171250308","wikidata":"https://www.wikidata.org/wiki/Q11468","display_name":"Nanotechnology","level":1,"score":0.23286131024360657},{"id":"https://openalex.org/C147789679","wikidata":"https://www.wikidata.org/wiki/Q11372","display_name":"Physical chemistry","level":1,"score":0.17476043105125427},{"id":"https://openalex.org/C178790620","wikidata":"https://www.wikidata.org/wiki/Q11351","display_name":"Organic chemistry","level":1,"score":0.0692054033279419},{"id":"https://openalex.org/C199360897","wikidata":"https://www.wikidata.org/wiki/Q9143","display_name":"Programming language","level":1,"score":0.0},{"id":"https://openalex.org/C2816523","wikidata":"https://www.wikidata.org/wiki/Q180184","display_name":"Sediment","level":2,"score":0.0},{"id":"https://openalex.org/C41008148","wikidata":"https://www.wikidata.org/wiki/Q21198","display_name":"Computer science","level":0,"score":0.0},{"id":"https://openalex.org/C111368507","wikidata":"https://www.wikidata.org/wiki/Q43518","display_name":"Oceanography","level":1,"score":0.0},{"id":"https://openalex.org/C127313418","wikidata":"https://www.wikidata.org/wiki/Q1069","display_name":"Geology","level":0,"score":0.0},{"id":"https://openalex.org/C151730666","wikidata":"https://www.wikidata.org/wiki/Q7205","display_name":"Paleontology","level":1,"score":0.0},{"id":"https://openalex.org/C86803240","wikidata":"https://www.wikidata.org/wiki/Q420","display_name":"Biology","level":0,"score":0.0}],"mesh":[],"locations_count":1,"locations":[{"id":"doi:10.1021/acs.chemmater.7b01236","doi":"https://doi.org/10.1021/acs.chemmater.7b01236","is_oa":false,"landing_page_url":"https://doi.org/10.1021/acs.chemmater.7b01236","pdf_url":null,"source":{"id":"https://openalex.org/S66104727","display_name":"Chemistry of Materials","issn_l":"0897-4756","issn":["0897-4756","1520-5002"],"is_oa":false,"is_in_doaj":false,"is_core":true,"listed_in":["anvur-scientific","cwts-core","dongbi-a","jufo-3","ki-jl-1","norway-2","poland-200","russia-white-list-1","vabb-shw"],"host_organization":"https://openalex.org/P4310320006","host_organization_name":"American Chemical Society","host_organization_lineage":["https://openalex.org/P4310320006"],"host_organization_lineage_names":["American Chemical Society"],"type":"journal"},"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"Chemistry of Materials","raw_type":"journal-article"}],"best_oa_location":null,"sustainable_development_goals":[],"study_designs":[],"awards":[{"id":"https://openalex.org/G1016333064","display_name":null,"funder_award_id":"2012K1A1A2040157","funder_id":"https://openalex.org/F4320322120","funder_display_name":"National Research Foundation of Korea"},{"id":"https://openalex.org/G6630784056","display_name":null,"funder_award_id":"NRF- 2014R1A2A1A10052979","funder_id":"https://openalex.org/F4320322120","funder_display_name":"National Research Foundation of Korea"}],"funders":[{"id":"https://openalex.org/F4320322120","display_name":"National Research Foundation of Korea","ror":"https://ror.org/013aysd81"}],"has_content":{"pdf":false,"grobid_xml":false},"content_urls":null,"referenced_works_count":30,"referenced_works":["https://openalex.org/W1544445790","https://openalex.org/W1658849193","https://openalex.org/W1661646169","https://openalex.org/W1859156506","https://openalex.org/W1979018333","https://openalex.org/W1989737392","https://openalex.org/W2000634138","https://openalex.org/W2020681192","https://openalex.org/W2026146621","https://openalex.org/W2042862454","https://openalex.org/W2049840926","https://openalex.org/W2053291562","https://openalex.org/W2059718353","https://openalex.org/W2062434090","https://openalex.org/W2074587672","https://openalex.org/W2089867010","https://openalex.org/W2096020809","https://openalex.org/W2106937322","https://openalex.org/W2126775462","https://openalex.org/W2156060063","https://openalex.org/W2171527111","https://openalex.org/W2316288570","https://openalex.org/W2321643997","https://openalex.org/W2323131607","https://openalex.org/W2325919434","https://openalex.org/W2327620849","https://openalex.org/W2331806265","https://openalex.org/W2335477282","https://openalex.org/W2517304432","https://openalex.org/W4231649355"],"related_works":["https://openalex.org/W2517304432","https://openalex.org/W1994888396","https://openalex.org/W2316288570","https://openalex.org/W2910258616","https://openalex.org/W4407640390","https://openalex.org/W2327620849","https://openalex.org/W2333655628","https://openalex.org/W2323131607","https://openalex.org/W3024217637","https://openalex.org/W4404415537"],"abstract_inverted_index":{"In":[0],"this":[1],"paper,":[2],"a":[3,49,113,169,202],"new":[4],"atomic":[5],"layer":[6,179,200,213],"deposition":[7],"(ALD)":[8],"process":[9,61,111,117],"for":[10,94,118],"depositing":[11],"binary":[12],"GeTe":[13,87,90,109],"and":[14,24,36,131,145,180,195],"ternary":[15,153],"Ge\u2013Sb\u2013Te":[16,102],"thin":[17],"films":[18,47,91,103,155],"is":[19,77],"reported,":[20],"where":[21,124],"HGeCl":[22],"3":[23,26,28,122,130,133,135,164,217],"((CH":[25,132],")":[27,129,134],"Si)":[29,136],"2":[30,120,126,137,162],"Te":[31,37,121,138,146,163],"were":[32,104,139],"used":[33],"as":[34,142,214],"Ge":[35,67,73,193],"precursors,":[38],"respectively.":[39],"The":[40,89],"precursors":[41],"reacted":[42],"together":[43],"to":[44,69,79,207],"form":[45,70],"the":[46,66,71,81,108,143,149,152,159,176,186,192,196,211],"at":[48],"low":[50],"substrate":[51],"temperature":[52],"of":[53,83,151,185,205],"50\u2013100":[54],"\u00b0C,":[55],"without":[56],"involving":[57],"any":[58],"additional":[59],"reactive":[60],"gas.":[62],"HCl":[63],"elimination":[64],"from":[65,158,210],"precursor":[68,182,194],"divalent":[72],"intermediate,":[74],"GeCl":[75],"2,":[76],"proposed":[78],"explain":[80],"formation":[82],"1:1":[84],"composition":[85,150,166],"stoichiometric":[86],"films.":[88],"are":[92],"promising":[93],"use":[95],"in":[96],"phase":[97],"change":[98],"memory":[99],"applications.":[100],"Ternary":[101],"deposited":[105,198],"by":[106],"combining":[107],"ALD":[110,116],"with":[112],"previously":[114,177,197],"developed":[115],"Sb":[119,144,206],"films,":[123],"Sb(OC":[125],"H":[127],"5":[128],"employed":[140],"respectively":[141],"precursors.":[147],"However,":[148],"GeSbTe":[154],"deviated":[156],"slightly":[157],"desired":[160],"GeTe\u2013Sb":[161],"pseudobinary":[165],"suggesting":[167],"that":[168,189],"certain":[170],"unwanted":[171],"reaction":[172,190],"was":[173],"involved":[174],"between":[175,191],"grown":[178],"incoming":[181],"molecules.":[183],"Study":[184],"mechanism":[187],"revealed":[188],"Sb\u2013Te":[199,212],"caused":[201],"substantial":[203],"portion":[204],"be":[208],"removed":[209],"volatile":[215],"SbCl":[216],".":[218]},"counts_by_year":[{"year":2026,"cited_by_count":3},{"year":2025,"cited_by_count":6},{"year":2024,"cited_by_count":4},{"year":2023,"cited_by_count":4},{"year":2022,"cited_by_count":1},{"year":2021,"cited_by_count":6},{"year":2020,"cited_by_count":3},{"year":2019,"cited_by_count":6},{"year":2018,"cited_by_count":4}],"updated_date":"2026-10-14T16:39:01.820549","created_date":"2017-09-25T00:00:00"}