{"id":"https://openalex.org/W2698505134","doi":"https://doi.org/10.1109/tthz.2017.2710632","title":"850 GHz Receiver and Transmitter Front-Ends Using InP HEMT","display_name":"850 GHz Receiver and Transmitter Front-Ends Using InP HEMT","publication_year":2017,"publication_date":"2017-06-19","ids":{"openalex":"https://openalex.org/W2698505134","doi":"https://doi.org/10.1109/tthz.2017.2710632","mag":"2698505134"},"language":"en","primary_location":{"id":"doi:10.1109/tthz.2017.2710632","doi":"https://doi.org/10.1109/tthz.2017.2710632","is_oa":false,"landing_page_url":"https://doi.org/10.1109/tthz.2017.2710632","pdf_url":null,"source":{"id":"https://openalex.org/S202289667","display_name":"IEEE Transactions on Terahertz Science and Technology","issn_l":"2156-342X","issn":["2156-342X","2156-3446"],"is_oa":false,"is_in_doaj":false,"is_core":true,"listed_in":["cwts-core","dongbi-b","jufo-2","norway-1","poland-100","russia-white-list-1"],"host_organization":"https://openalex.org/P4310320754","host_organization_name":"IEEE Microwave Theory and Techniques Society","host_organization_lineage":["https://openalex.org/P4310320754"],"host_organization_lineage_names":["IEEE Microwave Theory and Techniques Society"],"type":"journal"},"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"IEEE Transactions on Terahertz Science and Technology","raw_type":"journal-article"},"volume":null,"type":"article","is_traditional":true,"indexed_in":["crossref"],"open_access":{"is_oa":false,"oa_status":"closed","oa_url":null,"any_repository_has_fulltext":false},"authorships":[{"author_position":"first","author":{"id":"https://openalex.org/A5102722010","display_name":"Kevin M. K. H. Leong","orcid":"https://orcid.org/0000-0002-5968-4342","observed_orcids":["https://orcid.org/0000-0002-5968-4342"]},"institutions":[{"id":"https://openalex.org/I2948394018","display_name":"Northrop Grumman (United States)","ror":"https://ror.org/05kewds18","country_code":"US","type":"company","lineage":["https://openalex.org/I2948394018"]}],"countries":["US"],"is_corresponding":false,"raw_author_name":"Kevin M. K. H. Leong","raw_affiliation_strings":["Northrop Grumman Corporation, Redondo Beach, CA, USA"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Northrop Grumman Corporation, Redondo Beach, CA, USA","institution_ids":["https://openalex.org/I2948394018"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5110193881","display_name":"X. B. Mei","orcid":null,"observed_orcids":[]},"institutions":[{"id":"https://openalex.org/I2948394018","display_name":"Northrop Grumman (United States)","ror":"https://ror.org/05kewds18","country_code":"US","type":"company","lineage":["https://openalex.org/I2948394018"]}],"countries":["US"],"is_corresponding":false,"raw_author_name":"Xiaobing Mei","raw_affiliation_strings":["Northrop Grumman Corporation, Redondo Beach, CA, USA"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Northrop Grumman Corporation, Redondo Beach, CA, USA","institution_ids":["https://openalex.org/I2948394018"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5078048109","display_name":"Wayne Yoshida","orcid":null,"observed_orcids":[]},"institutions":[{"id":"https://openalex.org/I2948394018","display_name":"Northrop Grumman (United States)","ror":"https://ror.org/05kewds18","country_code":"US","type":"company","lineage":["https://openalex.org/I2948394018"]}],"countries":["US"],"is_corresponding":false,"raw_author_name":"Wayne H. Yoshida","raw_affiliation_strings":["Northrop Grumman Corporation, Redondo Beach, CA, USA"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Northrop Grumman Corporation, Redondo Beach, CA, USA","institution_ids":["https://openalex.org/I2948394018"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5114249718","display_name":"Alexis Zamora","orcid":null,"observed_orcids":[]},"institutions":[{"id":"https://openalex.org/I2948394018","display_name":"Northrop Grumman (United States)","ror":"https://ror.org/05kewds18","country_code":"US","type":"company","lineage":["https://openalex.org/I2948394018"]}],"countries":["US"],"is_corresponding":false,"raw_author_name":"Alexis Zamora","raw_affiliation_strings":["Northrop Grumman Corporation, Redondo Beach, CA, USA"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Northrop Grumman Corporation, Redondo Beach, CA, USA","institution_ids":["https://openalex.org/I2948394018"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5003845225","display_name":"Jose G. Padilla","orcid":null,"observed_orcids":[]},"institutions":[{"id":"https://openalex.org/I2948394018","display_name":"Northrop Grumman (United States)","ror":"https://ror.org/05kewds18","country_code":"US","type":"company","lineage":["https://openalex.org/I2948394018"]}],"countries":["US"],"is_corresponding":false,"raw_author_name":"Jose G. Padilla","raw_affiliation_strings":["Northrop Grumman Corporation, Redondo Beach, CA, USA"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Northrop Grumman Corporation, Redondo Beach, CA, USA","institution_ids":["https://openalex.org/I2948394018"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5010229885","display_name":"Ben S. Gorospe","orcid":null,"observed_orcids":[]},"institutions":[{"id":"https://openalex.org/I2948394018","display_name":"Northrop Grumman (United States)","ror":"https://ror.org/05kewds18","country_code":"US","type":"company","lineage":["https://openalex.org/I2948394018"]}],"countries":["US"],"is_corresponding":false,"raw_author_name":"Ben S. Gorospe","raw_affiliation_strings":["Northrop Grumman Corporation, Redondo Beach, CA, USA"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Northrop Grumman Corporation, Redondo Beach, CA, USA","institution_ids":["https://openalex.org/I2948394018"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5101487484","display_name":"Khanh T. Nguyen","orcid":"https://orcid.org/0000-0002-0603-9382","observed_orcids":["https://orcid.org/0000-0002-0603-9382"]},"institutions":[{"id":"https://openalex.org/I2948394018","display_name":"Northrop Grumman (United States)","ror":"https://ror.org/05kewds18","country_code":"US","type":"company","lineage":["https://openalex.org/I2948394018"]}],"countries":["US"],"is_corresponding":false,"raw_author_name":"Khanh Nguyen","raw_affiliation_strings":["Northrop Grumman Corporation, Redondo Beach, CA, USA"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Northrop Grumman Corporation, Redondo Beach, CA, USA","institution_ids":["https://openalex.org/I2948394018"]}]},{"author_position":"last","author":{"id":"https://openalex.org/A5078379335","display_name":"William R. Deal","orcid":"https://orcid.org/0000-0002-6343-9489","observed_orcids":["https://orcid.org/0000-0002-6343-9489"]},"institutions":[{"id":"https://openalex.org/I2948394018","display_name":"Northrop Grumman (United States)","ror":"https://ror.org/05kewds18","country_code":"US","type":"company","lineage":["https://openalex.org/I2948394018"]}],"countries":["US"],"is_corresponding":false,"raw_author_name":"William R. Deal","raw_affiliation_strings":["Northrop Grumman Corporation, Redondo Beach, CA, USA"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Northrop Grumman Corporation, Redondo Beach, CA, USA","institution_ids":["https://openalex.org/I2948394018"]}]}],"institutions":[],"countries_distinct_count":1,"institutions_distinct_count":1,"corresponding_author_ids":[],"corresponding_institution_ids":["https://openalex.org/I2948394018"],"apc_list":{"value":2645,"currency":"USD","value_usd":2645},"apc_paid":null,"fwci":2.2308,"has_fulltext":false,"cited_by_count":78,"citation_normalized_percentile":{"value":0.88012281,"is_in_top_1_percent":false,"is_in_top_10_percent":false},"cited_by_percentile_year":{"min":89,"max":99},"biblio":{"volume":"7","issue":"4","first_page":"466","last_page":"475"},"is_retracted":false,"is_paratext":false,"is_xpac":false,"primary_topic":{"id":"https://openalex.org/T10187","display_name":"Radio Frequency Integrated Circuit Design","score":0.975600004196167,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},"topics":[{"id":"https://openalex.org/T10187","display_name":"Radio Frequency Integrated Circuit Design","score":0.975600004196167,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T11803","display_name":"Superconducting and THz Device Technology","score":0.008999999612569809,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T10752","display_name":"Terahertz technology and applications","score":0.007799999788403511,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}}],"keywords":[{"id":"https://openalex.org/keywords/indium-phosphide","display_name":"indium phosphide","score":0.8270000219345093},{"id":"https://openalex.org/keywords/inp-hemt","display_name":"InP HEMT","score":0.8399999737739563},{"id":"https://openalex.org/keywords/low-noise-amplifier","display_name":"low noise amplifier","score":0.6690000295639038},{"id":"https://openalex.org/keywords/power-amplifier","display_name":"power amplifier","score":0.9070000052452087},{"id":"https://openalex.org/keywords/frequency-conversion","display_name":"frequency conversion","score":0.968999981880188},{"id":"https://openalex.org/keywords/integrated-circuit-design","display_name":"integrated circuit design","score":0.7009999752044678},{"id":"https://openalex.org/keywords/integrated-circuit-packaging","display_name":"integrated circuit packaging","score":0.6330000162124634},{"id":"https://openalex.org/keywords/process-capability","display_name":"process capability","score":0.6809999942779541},{"id":"https://openalex.org/keywords/maximum-frequency-of-oscillation","display_name":"maximum oscillation frequency","score":0.7720000147819519},{"id":"https://openalex.org/keywords/cutoff-frequency","display_name":"cutoff frequency","score":0.9750000238418579}],"concepts":[{"id":"https://openalex.org/C47798520","wikidata":"https://www.wikidata.org/wiki/Q190157","display_name":"Transmitter","level":3,"score":0.9020843505859375},{"id":"https://openalex.org/C162057924","wikidata":"https://www.wikidata.org/wiki/Q1617706","display_name":"High-electron-mobility transistor","level":4,"score":0.7400012016296387},{"id":"https://openalex.org/C119599485","wikidata":"https://www.wikidata.org/wiki/Q43035","display_name":"Electrical engineering","level":1,"score":0.6049677133560181},{"id":"https://openalex.org/C2776152967","wikidata":"https://www.wikidata.org/wiki/Q416291","display_name":"Indium phosphide","level":3,"score":0.5938515067100525},{"id":"https://openalex.org/C81774821","wikidata":"https://www.wikidata.org/wiki/Q1227176","display_name":"Diplexer","level":2,"score":0.4838665723800659},{"id":"https://openalex.org/C194257627","wikidata":"https://www.wikidata.org/wiki/Q211554","display_name":"Amplifier","level":3,"score":0.4831749498844147},{"id":"https://openalex.org/C128450285","wikidata":"https://www.wikidata.org/wiki/Q1945036","display_name":"Monolithic microwave integrated circuit","level":4,"score":0.48213884234428406},{"id":"https://openalex.org/C53071545","wikidata":"https://www.wikidata.org/wiki/Q7276615","display_name":"RF front end","level":3,"score":0.4775455892086029},{"id":"https://openalex.org/C49040817","wikidata":"https://www.wikidata.org/wiki/Q193091","display_name":"Optoelectronics","level":1,"score":0.462492972612381},{"id":"https://openalex.org/C530198007","wikidata":"https://www.wikidata.org/wiki/Q80831","display_name":"Integrated circuit","level":2,"score":0.4619140625},{"id":"https://openalex.org/C172385210","wikidata":"https://www.wikidata.org/wiki/Q5339","display_name":"Transistor","level":3,"score":0.4336111545562744},{"id":"https://openalex.org/C24326235","wikidata":"https://www.wikidata.org/wiki/Q126095","display_name":"Electronic engineering","level":1,"score":0.3594752550125122},{"id":"https://openalex.org/C192562407","wikidata":"https://www.wikidata.org/wiki/Q228736","display_name":"Materials science","level":0,"score":0.341727077960968},{"id":"https://openalex.org/C121332964","wikidata":"https://www.wikidata.org/wiki/Q413","display_name":"Physics","level":0,"score":0.33781278133392334},{"id":"https://openalex.org/C74064498","wikidata":"https://www.wikidata.org/wiki/Q3396184","display_name":"Radio frequency","level":2,"score":0.3219611346721649},{"id":"https://openalex.org/C127413603","wikidata":"https://www.wikidata.org/wiki/Q11023","display_name":"Engineering","level":0,"score":0.2863112688064575},{"id":"https://openalex.org/C510052550","wikidata":"https://www.wikidata.org/wiki/Q422819","display_name":"Gallium arsenide","level":2,"score":0.25536036491394043},{"id":"https://openalex.org/C46362747","wikidata":"https://www.wikidata.org/wiki/Q173431","display_name":"CMOS","level":2,"score":0.11552208662033081},{"id":"https://openalex.org/C165801399","wikidata":"https://www.wikidata.org/wiki/Q25428","display_name":"Voltage","level":2,"score":0.09922227263450623},{"id":"https://openalex.org/C127162648","wikidata":"https://www.wikidata.org/wiki/Q16858953","display_name":"Channel (broadcasting)","level":2,"score":0.0}],"mesh":[],"locations_count":1,"locations":[{"id":"doi:10.1109/tthz.2017.2710632","doi":"https://doi.org/10.1109/tthz.2017.2710632","is_oa":false,"landing_page_url":"https://doi.org/10.1109/tthz.2017.2710632","pdf_url":null,"source":{"id":"https://openalex.org/S202289667","display_name":"IEEE Transactions on Terahertz Science and Technology","issn_l":"2156-342X","issn":["2156-342X","2156-3446"],"is_oa":false,"is_in_doaj":false,"is_core":true,"listed_in":["cwts-core","dongbi-b","jufo-2","norway-1","poland-100","russia-white-list-1"],"host_organization":"https://openalex.org/P4310320754","host_organization_name":"IEEE Microwave Theory and Techniques Society","host_organization_lineage":["https://openalex.org/P4310320754"],"host_organization_lineage_names":["IEEE Microwave Theory and Techniques Society"],"type":"journal"},"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"IEEE Transactions on Terahertz Science and Technology","raw_type":"journal-article"}],"best_oa_location":null,"sustainable_development_goals":[{"display_name":"Industry, innovation and infrastructure","id":"https://metadata.un.org/sdg/9","score":0.5378999710083008}],"study_designs":[],"awards":[],"funders":[{"id":"https://openalex.org/F4320308204","display_name":"Northrop Grumman","ror":"https://ror.org/05kewds18"},{"id":"https://openalex.org/F4320332180","display_name":"Defense Advanced Research Projects Agency","ror":"https://ror.org/02caytj08"}],"has_content":{"grobid_xml":false,"pdf":false},"content_urls":null,"referenced_works_count":15,"referenced_works":["https://openalex.org/W1554889294","https://openalex.org/W1578592071","https://openalex.org/W1644191375","https://openalex.org/W1990104550","https://openalex.org/W1998340256","https://openalex.org/W2015355974","https://openalex.org/W2023575859","https://openalex.org/W2103405668","https://openalex.org/W2144056948","https://openalex.org/W2155807160","https://openalex.org/W2162329841","https://openalex.org/W2170418490","https://openalex.org/W2203137131","https://openalex.org/W2543129925","https://openalex.org/W4246105043"],"related_works":["https://openalex.org/W2023288356","https://openalex.org/W2030121121","https://openalex.org/W2584026119","https://openalex.org/W4402569431","https://openalex.org/W3043281468","https://openalex.org/W2087837496","https://openalex.org/W2038175112","https://openalex.org/W1989959162","https://openalex.org/W1511822402","https://openalex.org/W2054377345"],"abstract_inverted_index":{"This":[0,68],"paper":[1,69],"reports":[2],"on":[3],"development":[4],"of":[5,17,31,74,85],"850":[6,61],"GHz":[7],"band":[8],"receiver":[9,48,87],"and":[10,35,49,56,80,82,88],"transmitter":[11,50,89],"front-ends":[12],"using":[13],"a":[14,71],"new":[15],"generation":[16],"25":[18],"nm":[19],"indium":[20],"phosphide":[21],"high":[22,28],"electron":[23],"mobility":[24],"transistor":[25],"engineered":[26],"for":[27,46],"maximum":[29],"frequency":[30,37,66],"oscillation":[32],"f":[33],"MAX":[34],"cut-off":[36],"fT.":[38],"Integrated":[39],"circuits":[40],"in":[41],"this":[42],"technology":[43],"are":[44],"used":[45],"all":[47],"functions,":[51],"including":[52],"low":[53],"noise":[54],"amplification":[55,58],"power":[57],"directly":[59],"at":[60],"GHz,":[62],"as":[63,65],"well":[64],"conversion.":[67],"provides":[70],"detailed":[72],"summary":[73],"process":[75],"capability,":[76],"integrated":[77],"circuit":[78],"design":[79],"packaging,":[81],"an":[83],"overview":[84],"the":[86],"front-ends.":[90]},"counts_by_year":[{"year":2026,"cited_by_count":3},{"year":2025,"cited_by_count":6},{"year":2024,"cited_by_count":9},{"year":2023,"cited_by_count":12},{"year":2022,"cited_by_count":11},{"year":2021,"cited_by_count":17},{"year":2020,"cited_by_count":8},{"year":2019,"cited_by_count":5},{"year":2018,"cited_by_count":6},{"year":2017,"cited_by_count":1}],"updated_date":"2026-11-07T11:25:07.637180","created_date":"2017-06-30T00:00:00"}