{"id":"https://openalex.org/W2600564282","doi":"https://doi.org/10.7567/ssdm.2016.d-5-02","title":"Low Temperature (250\u2103) Crystallization of Amorphous Ge Thin Film on Insulator through Ag-induced Layer Exchange","display_name":"Low Temperature (250\u2103) Crystallization of Amorphous Ge Thin Film on Insulator through Ag-induced Layer Exchange","publication_year":2016,"publication_date":"2016-09-29","ids":{"openalex":"https://openalex.org/W2600564282","doi":"https://doi.org/10.7567/ssdm.2016.d-5-02","mag":"2600564282"},"language":"en","primary_location":{"id":"doi:10.7567/ssdm.2016.d-5-02","doi":"https://doi.org/10.7567/ssdm.2016.d-5-02","is_oa":false,"landing_page_url":"https://doi.org/10.7567/ssdm.2016.d-5-02","pdf_url":null,"source":{"id":"https://openalex.org/S4306510274","display_name":"International Conference on Solid State Devices and Materials (SSDM)","issn_l":null,"issn":null,"is_oa":false,"is_in_doaj":false,"is_core":false,"listed_in":[],"host_organization":null,"host_organization_name":null,"host_organization_lineage":[],"host_organization_lineage_names":[],"type":"conference"},"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"Extended Abstracts of the 2016 International Conference on Solid State Devices and Materials","raw_type":"proceedings-article"},"volume":null,"type":"conference-paper","indexed_in":["crossref"],"open_access":{"is_oa":false,"oa_status":"closed","oa_url":null,"any_repository_has_fulltext":false},"authorships":[{"author_position":"first","author":{"id":"https://openalex.org/A5013606232","display_name":"Ryota Yoshimine","orcid":null,"observed_orcids":[]},"institutions":[],"countries":[],"is_corresponding":false,"raw_author_name":"R. Yoshimine","raw_affiliation_strings":[],"raw_orcid":null,"affiliations":[]},{"author_position":"middle","author":{"id":"https://openalex.org/A5000655688","display_name":"Kaoru Toko","orcid":"https://orcid.org/0000-0002-3936-0519","observed_orcids":["https://orcid.org/0000-0002-3936-0519"]},"institutions":[],"countries":[],"is_corresponding":false,"raw_author_name":"K. Toko","raw_affiliation_strings":[],"raw_orcid":null,"affiliations":[]},{"author_position":"last","author":{"id":"https://openalex.org/A5041208999","display_name":"Takeshi Suemasu","orcid":null,"observed_orcids":[]},"institutions":[],"countries":[],"is_corresponding":false,"raw_author_name":"T. Suemasu","raw_affiliation_strings":[],"raw_orcid":null,"affiliations":[]}],"institutions":[],"countries_distinct_count":0,"institutions_distinct_count":0,"corresponding_author_ids":[],"corresponding_institution_ids":[],"apc_list":null,"apc_paid":null,"fwci":0.0,"has_fulltext":false,"cited_by_count":0,"citation_normalized_percentile":{"value":0.2239677,"is_in_top_1_percent":false,"is_in_top_10_percent":false},"cited_by_percentile_year":null,"biblio":{"volume":null,"issue":null,"first_page":null,"last_page":null},"is_retracted":false,"is_paratext":false,"is_xpac":false,"primary_topic":{"id":"https://openalex.org/T10472","display_name":"Semiconductor materials and devices","score":0.47510001063346863,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},"topics":[{"id":"https://openalex.org/T10472","display_name":"Semiconductor materials and devices","score":0.47510001063346863,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T10623","display_name":"Thin-Film Transistor Technologies","score":0.28049999475479126,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T11853","display_name":"Semiconductor materials and interfaces","score":0.15559999644756317,"subfield":{"id":"https://openalex.org/subfields/3107","display_name":"Atomic and Molecular Physics, and Optics"},"field":{"id":"https://openalex.org/fields/31","display_name":"Physics and Astronomy"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}}],"keywords":[{"id":"https://openalex.org/keywords/amorphous-germanium","display_name":"amorphous germanium","score":0.8840000033378601},{"id":"https://openalex.org/keywords/thin-films","display_name":"thin films","score":0.6830000281333923},{"id":"https://openalex.org/keywords/low-temperature-crystallization","display_name":"low-temperature crystallization","score":0.8050000071525574},{"id":"https://openalex.org/keywords/soi","display_name":"SOI","score":0.5120000243186951},{"id":"https://openalex.org/keywords/epitaxial-crystallization","display_name":"epitaxial crystallization","score":0.5830000042915344},{"id":"https://openalex.org/keywords/germanium-on-insulator","display_name":"germanium-on-insulator","score":0.6639999747276306}],"concepts":[{"id":"https://openalex.org/C192562407","wikidata":"https://www.wikidata.org/wiki/Q228736","display_name":"Materials science","level":0,"score":0.9262690544128418},{"id":"https://openalex.org/C203036418","wikidata":"https://www.wikidata.org/wiki/Q284256","display_name":"Crystallization","level":2,"score":0.7939614057540894},{"id":"https://openalex.org/C56052488","wikidata":"https://www.wikidata.org/wiki/Q103382","display_name":"Amorphous solid","level":2,"score":0.7222820520401001},{"id":"https://openalex.org/C2779227376","wikidata":"https://www.wikidata.org/wiki/Q6505497","display_name":"Layer (electronics)","level":2,"score":0.6036247611045837},{"id":"https://openalex.org/C212702","wikidata":"https://www.wikidata.org/wiki/Q178150","display_name":"Insulator (electricity)","level":2,"score":0.5382833480834961},{"id":"https://openalex.org/C19067145","wikidata":"https://www.wikidata.org/wiki/Q1137203","display_name":"Thin film","level":2,"score":0.4605748653411865},{"id":"https://openalex.org/C49040817","wikidata":"https://www.wikidata.org/wiki/Q193091","display_name":"Optoelectronics","level":1,"score":0.4512273371219635},{"id":"https://openalex.org/C159985019","wikidata":"https://www.wikidata.org/wiki/Q181790","display_name":"Composite material","level":1,"score":0.3725772202014923},{"id":"https://openalex.org/C42360764","wikidata":"https://www.wikidata.org/wiki/Q83588","display_name":"Chemical engineering","level":1,"score":0.2877141237258911},{"id":"https://openalex.org/C171250308","wikidata":"https://www.wikidata.org/wiki/Q11468","display_name":"Nanotechnology","level":1,"score":0.2732970118522644},{"id":"https://openalex.org/C8010536","wikidata":"https://www.wikidata.org/wiki/Q160398","display_name":"Crystallography","level":1,"score":0.158269464969635},{"id":"https://openalex.org/C185592680","wikidata":"https://www.wikidata.org/wiki/Q2329","display_name":"Chemistry","level":0,"score":0.0},{"id":"https://openalex.org/C127413603","wikidata":"https://www.wikidata.org/wiki/Q11023","display_name":"Engineering","level":0,"score":0.0}],"mesh":[],"locations_count":1,"locations":[{"id":"doi:10.7567/ssdm.2016.d-5-02","doi":"https://doi.org/10.7567/ssdm.2016.d-5-02","is_oa":false,"landing_page_url":"https://doi.org/10.7567/ssdm.2016.d-5-02","pdf_url":null,"source":{"id":"https://openalex.org/S4306510274","display_name":"International Conference on Solid State Devices and Materials (SSDM)","issn_l":null,"issn":null,"is_oa":false,"is_in_doaj":false,"is_core":false,"listed_in":[],"host_organization":null,"host_organization_name":null,"host_organization_lineage":[],"host_organization_lineage_names":[],"type":"conference"},"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"Extended Abstracts of the 2016 International Conference on Solid State Devices and Materials","raw_type":"proceedings-article"}],"best_oa_location":null,"sustainable_development_goals":[],"study_designs":[],"awards":[],"funders":[],"has_content":{"grobid_xml":false,"pdf":false},"content_urls":null,"referenced_works_count":0,"referenced_works":[],"related_works":["https://openalex.org/W4386492219","https://openalex.org/W2474462773","https://openalex.org/W2561138898","https://openalex.org/W3177046899","https://openalex.org/W3012659421","https://openalex.org/W3194164700","https://openalex.org/W2612876242","https://openalex.org/W2242774266","https://openalex.org/W2735756914","https://openalex.org/W1975152527"],"abstract_inverted_index":null,"counts_by_year":[],"updated_date":"2026-10-05T09:50:58.205359","created_date":"2017-04-07T00:00:00"}