{"id":"https://openalex.org/W2589085259","doi":null,"title":"GaN-HEMT Technology for High Gain and High Efficiency Power Amplifiers","display_name":"GaN-HEMT Technology for High Gain and High Efficiency Power Amplifiers","publication_year":2007,"publication_date":"2007-11-30","ids":{"openalex":"https://openalex.org/W2589085259","mag":"2589085259"},"language":"en","primary_location":{"id":"mag:2589085259","doi":null,"is_oa":false,"landing_page_url":"http://ci.nii.ac.jp/naid/10019976101","pdf_url":null,"source":null,"license":null,"license_id":null,"version":null,"is_accepted":false,"is_published":false,"raw_source_name":null,"raw_type":null},"volume":null,"type":"article","is_traditional":true,"indexed_in":[],"open_access":{"is_oa":false,"oa_status":"closed","oa_url":null,"any_repository_has_fulltext":false},"authorships":[{"author_position":"first","author":{"id":"https://openalex.org/A5028309762","display_name":"Shinichi Hoshi","orcid":"https://orcid.org/0000-0001-8935-1533","observed_orcids":["https://orcid.org/0000-0001-8935-1533"]},"institutions":[],"countries":[],"is_corresponding":false,"raw_author_name":"Shinichi Hoshi","raw_affiliation_strings":[],"raw_orcid":"https://orcid.org/0000-0001-8935-1533","affiliations":[]},{"author_position":"middle","author":{"id":"https://openalex.org/A5036800735","display_name":"Hideyuki Okita","orcid":"https://orcid.org/0000-0002-0205-5166","observed_orcids":["https://orcid.org/0000-0002-0205-5166"]},"institutions":[],"countries":[],"is_corresponding":false,"raw_author_name":"Hideyuki Okita","raw_affiliation_strings":[],"raw_orcid":"https://orcid.org/0000-0002-0205-5166","affiliations":[]},{"author_position":"middle","author":{"id":null,"display_name":"Morino Yoshiaki","orcid":null,"observed_orcids":[]},"institutions":[],"countries":[],"is_corresponding":false,"raw_author_name":"Morino Yoshiaki","raw_affiliation_strings":[],"raw_orcid":null,"affiliations":[]},{"author_position":"middle","author":{"id":"https://openalex.org/A5101003081","display_name":"Masanori Itoh","orcid":"https://orcid.org/0009-0003-0716-9837","observed_orcids":["https://orcid.org/0009-0003-0716-9837"]},"institutions":[],"countries":[],"is_corresponding":false,"raw_author_name":"Masanori Itoh","raw_affiliation_strings":[],"raw_orcid":null,"affiliations":[]},{"author_position":"last","author":{"id":"https://openalex.org/A5108538148","display_name":"Shouhei Seki","orcid":null,"observed_orcids":[]},"institutions":[],"countries":[],"is_corresponding":false,"raw_author_name":"Shouhei Seki","raw_affiliation_strings":[],"raw_orcid":null,"affiliations":[]}],"institutions":[],"countries_distinct_count":0,"institutions_distinct_count":0,"corresponding_author_ids":[],"corresponding_institution_ids":[],"apc_list":null,"apc_paid":null,"fwci":0.0,"has_fulltext":false,"cited_by_count":1,"citation_normalized_percentile":{"value":0.0,"is_in_top_1_percent":false,"is_in_top_10_percent":false},"cited_by_percentile_year":{"min":88,"max":93},"biblio":{"volume":"2007","issue":"15","first_page":"25","last_page":"29"},"is_retracted":false,"is_paratext":false,"is_xpac":false,"primary_topic":{"id":"https://openalex.org/T11248","display_name":"Advanced Power Amplifier Design","score":0.9824000000953674,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},"topics":[{"id":"https://openalex.org/T11248","display_name":"Advanced Power Amplifier Design","score":0.9824000000953674,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T10099","display_name":"GaN-based semiconductor devices and materials","score":0.017000000923871994,"subfield":{"id":"https://openalex.org/subfields/3104","display_name":"Condensed Matter Physics"},"field":{"id":"https://openalex.org/fields/31","display_name":"Physics and Astronomy"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T10361","display_name":"Silicon Carbide Semiconductor Technologies","score":0.0003000000142492354,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}}],"keywords":[{"id":"https://openalex.org/keywords/gallium-nitride","display_name":"gallium nitride","score":0.8659999966621399},{"id":"https://openalex.org/keywords/high-electron-mobility-transistors","display_name":"high electron mobility transistors","score":0.9629999995231628},{"id":"https://openalex.org/keywords/power-amplifier","display_name":"power amplifier","score":0.9490000009536743},{"id":"https://openalex.org/keywords/high-gain","display_name":"high gain","score":0.8460000157356262},{"id":"https://openalex.org/keywords/high-efficiency","display_name":"high efficiency","score":0.6480000019073486}],"concepts":[{"id":"https://openalex.org/C194257627","wikidata":"https://www.wikidata.org/wiki/Q211554","display_name":"Amplifier","level":3,"score":0.6997635960578918},{"id":"https://openalex.org/C162057924","wikidata":"https://www.wikidata.org/wiki/Q1617706","display_name":"High-electron-mobility transistor","level":4,"score":0.6611434817314148},{"id":"https://openalex.org/C163258240","wikidata":"https://www.wikidata.org/wiki/Q25342","display_name":"Power (physics)","level":2,"score":0.5308742523193359},{"id":"https://openalex.org/C119599485","wikidata":"https://www.wikidata.org/wiki/Q43035","display_name":"Electrical engineering","level":1,"score":0.38987839221954346},{"id":"https://openalex.org/C192562407","wikidata":"https://www.wikidata.org/wiki/Q228736","display_name":"Materials science","level":0,"score":0.3774181008338928},{"id":"https://openalex.org/C49040817","wikidata":"https://www.wikidata.org/wiki/Q193091","display_name":"Optoelectronics","level":1,"score":0.34375232458114624},{"id":"https://openalex.org/C127413603","wikidata":"https://www.wikidata.org/wiki/Q11023","display_name":"Engineering","level":0,"score":0.20026013255119324},{"id":"https://openalex.org/C172385210","wikidata":"https://www.wikidata.org/wiki/Q5339","display_name":"Transistor","level":3,"score":0.171920508146286},{"id":"https://openalex.org/C121332964","wikidata":"https://www.wikidata.org/wiki/Q413","display_name":"Physics","level":0,"score":0.167420893907547},{"id":"https://openalex.org/C165801399","wikidata":"https://www.wikidata.org/wiki/Q25428","display_name":"Voltage","level":2,"score":0.11344161629676819},{"id":"https://openalex.org/C46362747","wikidata":"https://www.wikidata.org/wiki/Q173431","display_name":"CMOS","level":2,"score":0.09229224920272827},{"id":"https://openalex.org/C62520636","wikidata":"https://www.wikidata.org/wiki/Q944","display_name":"Quantum mechanics","level":1,"score":0.0}],"mesh":[],"locations_count":1,"locations":[{"id":"mag:2589085259","doi":null,"is_oa":false,"landing_page_url":"http://ci.nii.ac.jp/naid/10019976101","pdf_url":null,"source":null,"license":null,"license_id":null,"version":null,"is_accepted":false,"is_published":false,"raw_source_name":null,"raw_type":null}],"best_oa_location":null,"sustainable_development_goals":[],"study_designs":[],"awards":[],"funders":[],"has_content":{"pdf":false,"grobid_xml":false},"content_urls":null,"referenced_works_count":0,"referenced_works":[],"related_works":["https://openalex.org/W2519571787","https://openalex.org/W2921068646","https://openalex.org/W4390763221","https://openalex.org/W2958503940","https://openalex.org/W2922839590","https://openalex.org/W7172420540","https://openalex.org/W7144617648","https://openalex.org/W2896393436","https://openalex.org/W2426937611","https://openalex.org/W7145789457"],"abstract_inverted_index":null,"counts_by_year":[{"year":2015,"cited_by_count":1}],"updated_date":"2026-10-25T09:29:13.331239","created_date":"2017-02-24T00:00:00"}