{"id":"https://openalex.org/W2587501906","doi":"https://doi.org/10.1557/s1092578300001873","title":"PEMBE-Growth of Gallium Nitride on (0001) Sapphire: A comparison to MOCVD grown GaN","display_name":"PEMBE-Growth of Gallium Nitride on (0001) Sapphire: A comparison to MOCVD grown GaN","publication_year":1996,"publication_date":"1996-01-01","ids":{"openalex":"https://openalex.org/W2587501906","doi":"https://doi.org/10.1557/s1092578300001873","mag":"2587501906"},"language":"en","primary_location":{"id":"doi:10.1557/s1092578300001873","doi":"https://doi.org/10.1557/s1092578300001873","is_oa":true,"landing_page_url":"https://doi.org/10.1557/s1092578300001873","pdf_url":"https://link.springer.com/content/pdf/10.1557/S1092578300001873.pdf","source":{"id":"https://openalex.org/S186240106","display_name":"MRS Internet Journal of Nitride Semiconductor Research","issn_l":"1092-5783","issn":["1092-5783"],"is_oa":false,"is_in_doaj":false,"is_core":true,"listed_in":["cwts-core","jufo-1"],"host_organization":"https://openalex.org/P4310311721","host_organization_name":"Cambridge University Press","host_organization_lineage":["https://openalex.org/P4310311721","https://openalex.org/P4310311702"],"host_organization_lineage_names":["Cambridge University Press","University of Cambridge"],"type":"journal"},"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"MRS Internet Journal of Nitride Semiconductor Research","raw_type":"journal-article"},"volume":null,"type":"article","is_traditional":true,"indexed_in":["crossref"],"open_access":{"is_oa":true,"oa_status":"bronze","oa_url":"https://link.springer.com/content/pdf/10.1557/S1092578300001873.pdf","any_repository_has_fulltext":false},"authorships":[{"author_position":"first","author":{"id":"https://openalex.org/A5072177913","display_name":"Helmut Angerer","orcid":null,"observed_orcids":[]},"institutions":[{"id":"https://openalex.org/I62916508","display_name":"Technical University of Munich","ror":"https://ror.org/02kkvpp62","country_code":"DE","type":"education","lineage":["https://openalex.org/I62916508"]}],"countries":["DE"],"is_corresponding":false,"raw_author_name":"H. Angerer","raw_affiliation_strings":["Walter Schottky Institut, Technische Universit\u00e4t M\u00fcnchen, Germany"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Walter Schottky Institut, Technische Universit\u00e4t M\u00fcnchen, Germany","institution_ids":["https://openalex.org/I62916508"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5031355089","display_name":"O. Ambacher","orcid":"https://orcid.org/0000-0001-5193-9016","observed_orcids":["https://orcid.org/0000-0001-5193-9016"]},"institutions":[{"id":"https://openalex.org/I62916508","display_name":"Technical University of Munich","ror":"https://ror.org/02kkvpp62","country_code":"DE","type":"education","lineage":["https://openalex.org/I62916508"]}],"countries":["DE"],"is_corresponding":false,"raw_author_name":"O. Ambacher","raw_affiliation_strings":["Walter Schottky Institut, Technische Universit\u00e4t M\u00fcnchen, Germany"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Walter Schottky Institut, Technische Universit\u00e4t M\u00fcnchen, Germany","institution_ids":["https://openalex.org/I62916508"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5032823976","display_name":"Roman Dimitrov","orcid":null,"observed_orcids":[]},"institutions":[{"id":"https://openalex.org/I62916508","display_name":"Technical University of Munich","ror":"https://ror.org/02kkvpp62","country_code":"DE","type":"education","lineage":["https://openalex.org/I62916508"]}],"countries":["DE"],"is_corresponding":false,"raw_author_name":"R. Dimitrov","raw_affiliation_strings":["Walter Schottky Institut, Technische Universit\u00e4t M\u00fcnchen, Germany"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Walter Schottky Institut, Technische Universit\u00e4t M\u00fcnchen, Germany","institution_ids":["https://openalex.org/I62916508"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5103444872","display_name":"T. H. Metzger","orcid":null,"observed_orcids":[]},"institutions":[{"id":"https://openalex.org/I62916508","display_name":"Technical University of Munich","ror":"https://ror.org/02kkvpp62","country_code":"DE","type":"education","lineage":["https://openalex.org/I62916508"]}],"countries":["DE"],"is_corresponding":false,"raw_author_name":"Th. Metzger","raw_affiliation_strings":["Walter Schottky Institut, Technische Universit\u00e4t M\u00fcnchen, Germany"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Walter Schottky Institut, Technische Universit\u00e4t M\u00fcnchen, Germany","institution_ids":["https://openalex.org/I62916508"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5049302923","display_name":"Walter Rieger","orcid":null,"observed_orcids":[]},"institutions":[{"id":"https://openalex.org/I62916508","display_name":"Technical University of Munich","ror":"https://ror.org/02kkvpp62","country_code":"DE","type":"education","lineage":["https://openalex.org/I62916508"]}],"countries":["DE"],"is_corresponding":false,"raw_author_name":"W. Rieger","raw_affiliation_strings":["Walter Schottky Institut, Technische Universit\u00e4t M\u00fcnchen, Germany"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Walter Schottky Institut, Technische Universit\u00e4t M\u00fcnchen, Germany","institution_ids":["https://openalex.org/I62916508"]}]},{"author_position":"last","author":{"id":"https://openalex.org/A5004139860","display_name":"M. Stutzmann","orcid":"https://orcid.org/0000-0002-0068-3505","observed_orcids":["https://orcid.org/0000-0002-0068-3505"]},"institutions":[{"id":"https://openalex.org/I62916508","display_name":"Technical University of Munich","ror":"https://ror.org/02kkvpp62","country_code":"DE","type":"education","lineage":["https://openalex.org/I62916508"]}],"countries":["DE"],"is_corresponding":false,"raw_author_name":"M. Stutzmann","raw_affiliation_strings":["Walter Schottky Institut, Technische Universit\u00e4t M\u00fcnchen, Germany"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Walter Schottky Institut, Technische Universit\u00e4t M\u00fcnchen, Germany","institution_ids":["https://openalex.org/I62916508"]}]}],"institutions":[],"countries_distinct_count":1,"institutions_distinct_count":1,"corresponding_author_ids":[],"corresponding_institution_ids":["https://openalex.org/I62916508"],"apc_list":null,"apc_paid":null,"fwci":2.4231,"has_fulltext":true,"cited_by_count":24,"citation_normalized_percentile":{"value":0.8937642,"is_in_top_1_percent":false,"is_in_top_10_percent":false},"cited_by_percentile_year":{"min":88,"max":93},"biblio":{"volume":"1","issue":null,"first_page":null,"last_page":null},"is_retracted":false,"is_paratext":false,"is_xpac":false,"primary_topic":{"id":"https://openalex.org/T10099","display_name":"GaN-based semiconductor devices and materials","score":1.0,"subfield":{"id":"https://openalex.org/subfields/3104","display_name":"Condensed Matter Physics"},"field":{"id":"https://openalex.org/fields/31","display_name":"Physics and Astronomy"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},"topics":[{"id":"https://openalex.org/T10099","display_name":"GaN-based semiconductor devices and materials","score":1.0,"subfield":{"id":"https://openalex.org/subfields/3104","display_name":"Condensed Matter Physics"},"field":{"id":"https://openalex.org/fields/31","display_name":"Physics and Astronomy"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T10361","display_name":"Silicon Carbide Semiconductor Technologies","score":0.0,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T11160","display_name":"Acoustic Wave Resonator Technologies","score":0.0,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}}],"keywords":[{"id":"https://openalex.org/keywords/gallium-nitride","display_name":"gallium nitride","score":0.9850000143051147},{"id":"https://openalex.org/keywords/c-plane-sapphire","display_name":"c-plane sapphire","score":0.7860000133514404},{"id":"https://openalex.org/keywords/epitaxial-films","display_name":"epitaxial thin films","score":0.6710000038146973},{"id":"https://openalex.org/keywords/aln-buffer-layer","display_name":"AlN buffer layer","score":0.8920000195503235},{"id":"https://openalex.org/keywords/rocking-curves","display_name":"rocking curves","score":0.6349999904632568},{"id":"https://openalex.org/keywords/photoluminescence-linewidth","display_name":"photoluminescence linewidth","score":0.675000011920929},{"id":"https://openalex.org/keywords/hall-mobility","display_name":"Hall mobility","score":0.8679999709129333},{"id":"https://openalex.org/keywords/carrier-concentration","display_name":"carrier concentration","score":0.9039999842643738},{"id":"https://openalex.org/keywords/growth-mechanism","display_name":"growth mechanism","score":0.5550000071525574},{"id":"https://openalex.org/keywords/film-morphology","display_name":"film morphology","score":0.4569999873638153}],"concepts":[{"id":"https://openalex.org/C108649604","wikidata":"https://www.wikidata.org/wiki/Q1065170","display_name":"Full width at half maximum","level":2,"score":0.8875352740287781},{"id":"https://openalex.org/C175665537","wikidata":"https://www.wikidata.org/wiki/Q1924991","display_name":"Metalorganic vapour phase epitaxy","level":4,"score":0.8203723430633545},{"id":"https://openalex.org/C2780064504","wikidata":"https://www.wikidata.org/wiki/Q127583","display_name":"Sapphire","level":3,"score":0.8168209791183472},{"id":"https://openalex.org/C192562407","wikidata":"https://www.wikidata.org/wiki/Q228736","display_name":"Materials science","level":0,"score":0.7967929244041443},{"id":"https://openalex.org/C110738630","wikidata":"https://www.wikidata.org/wiki/Q1135540","display_name":"Epitaxy","level":3,"score":0.6350516080856323},{"id":"https://openalex.org/C3792809","wikidata":"https://www.wikidata.org/wiki/Q898542","display_name":"Molecular beam epitaxy","level":4,"score":0.5432930588722229},{"id":"https://openalex.org/C113196181","wikidata":"https://www.wikidata.org/wiki/Q485223","display_name":"Analytical Chemistry (journal)","level":2,"score":0.5147316455841064},{"id":"https://openalex.org/C19067145","wikidata":"https://www.wikidata.org/wiki/Q1137203","display_name":"Thin film","level":2,"score":0.5048242211341858},{"id":"https://openalex.org/C57410435","wikidata":"https://www.wikidata.org/wiki/Q505668","display_name":"Chemical vapor deposition","level":2,"score":0.49811506271362305},{"id":"https://openalex.org/C2779227376","wikidata":"https://www.wikidata.org/wiki/Q6505497","display_name":"Layer (electronics)","level":2,"score":0.45721885561943054},{"id":"https://openalex.org/C207114421","wikidata":"https://www.wikidata.org/wiki/Q133900","display_name":"Diffraction","level":2,"score":0.4439876675605774},{"id":"https://openalex.org/C2778871202","wikidata":"https://www.wikidata.org/wiki/Q411713","display_name":"Gallium nitride","level":3,"score":0.44262567162513733},{"id":"https://openalex.org/C550372918","wikidata":"https://www.wikidata.org/wiki/Q861","display_name":"Gallium","level":2,"score":0.4243437349796295},{"id":"https://openalex.org/C49040817","wikidata":"https://www.wikidata.org/wiki/Q193091","display_name":"Optoelectronics","level":1,"score":0.39558762311935425},{"id":"https://openalex.org/C120665830","wikidata":"https://www.wikidata.org/wiki/Q14620","display_name":"Optics","level":1,"score":0.2930574417114258},{"id":"https://openalex.org/C171250308","wikidata":"https://www.wikidata.org/wiki/Q11468","display_name":"Nanotechnology","level":1,"score":0.16395315527915955},{"id":"https://openalex.org/C520434653","wikidata":"https://www.wikidata.org/wiki/Q38867","display_name":"Laser","level":2,"score":0.12216001749038696},{"id":"https://openalex.org/C185592680","wikidata":"https://www.wikidata.org/wiki/Q2329","display_name":"Chemistry","level":0,"score":0.11100327968597412},{"id":"https://openalex.org/C191897082","wikidata":"https://www.wikidata.org/wiki/Q11467","display_name":"Metallurgy","level":1,"score":0.058073192834854126},{"id":"https://openalex.org/C121332964","wikidata":"https://www.wikidata.org/wiki/Q413","display_name":"Physics","level":0,"score":0.05269181728363037},{"id":"https://openalex.org/C43617362","wikidata":"https://www.wikidata.org/wiki/Q170050","display_name":"Chromatography","level":1,"score":0.0}],"mesh":[],"locations_count":1,"locations":[{"id":"doi:10.1557/s1092578300001873","doi":"https://doi.org/10.1557/s1092578300001873","is_oa":true,"landing_page_url":"https://doi.org/10.1557/s1092578300001873","pdf_url":"https://link.springer.com/content/pdf/10.1557/S1092578300001873.pdf","source":{"id":"https://openalex.org/S186240106","display_name":"MRS Internet Journal of Nitride Semiconductor Research","issn_l":"1092-5783","issn":["1092-5783"],"is_oa":false,"is_in_doaj":false,"is_core":true,"listed_in":["cwts-core","jufo-1"],"host_organization":"https://openalex.org/P4310311721","host_organization_name":"Cambridge University Press","host_organization_lineage":["https://openalex.org/P4310311721","https://openalex.org/P4310311702"],"host_organization_lineage_names":["Cambridge University Press","University of Cambridge"],"type":"journal"},"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"MRS Internet Journal of Nitride Semiconductor Research","raw_type":"journal-article"}],"best_oa_location":{"id":"doi:10.1557/s1092578300001873","doi":"https://doi.org/10.1557/s1092578300001873","is_oa":true,"landing_page_url":"https://doi.org/10.1557/s1092578300001873","pdf_url":"https://link.springer.com/content/pdf/10.1557/S1092578300001873.pdf","source":{"id":"https://openalex.org/S186240106","display_name":"MRS Internet Journal of Nitride Semiconductor Research","issn_l":"1092-5783","issn":["1092-5783"],"is_oa":false,"is_in_doaj":false,"is_core":true,"listed_in":["cwts-core","jufo-1"],"host_organization":"https://openalex.org/P4310311721","host_organization_name":"Cambridge University Press","host_organization_lineage":["https://openalex.org/P4310311721","https://openalex.org/P4310311702"],"host_organization_lineage_names":["Cambridge University Press","University of Cambridge"],"type":"journal"},"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"MRS Internet Journal of Nitride Semiconductor Research","raw_type":"journal-article"},"sustainable_development_goals":[],"study_designs":[],"awards":[],"funders":[{"id":"https://openalex.org/F4320320879","display_name":"Deutsche Forschungsgemeinschaft","ror":"https://ror.org/018mejw64"},{"id":"https://openalex.org/F4320321450","display_name":"Bayerische Forschungsstiftung","ror":"https://ror.org/00emnts94"}],"has_content":{"pdf":true,"grobid_xml":true},"content_urls":{"pdf":"https://content.openalex.org/works/W2587501906.pdf","grobid_xml":"https://content.openalex.org/works/W2587501906.grobid-xml"},"referenced_works_count":7,"referenced_works":["https://openalex.org/W1978776927","https://openalex.org/W1994731712","https://openalex.org/W2003081477","https://openalex.org/W2037054209","https://openalex.org/W2088147660","https://openalex.org/W2125190467","https://openalex.org/W2157778377"],"related_works":["https://openalex.org/W4214672671","https://openalex.org/W1964056054","https://openalex.org/W2024049268","https://openalex.org/W1980121058","https://openalex.org/W2101104836","https://openalex.org/W1978859094","https://openalex.org/W2052945284","https://openalex.org/W2896674423","https://openalex.org/W2159784401","https://openalex.org/W2004400850"],"abstract_inverted_index":null,"counts_by_year":[{"year":2025,"cited_by_count":1},{"year":2023,"cited_by_count":1},{"year":2022,"cited_by_count":1},{"year":2018,"cited_by_count":1}],"updated_date":"2026-09-23T05:00:35.095934","created_date":"2017-02-17T00:00:00"}