{"id":"https://openalex.org/W2575235354","doi":"https://doi.org/10.1109/iedm.1987.191357","title":"Waveform measurements in high speed silicon bipolar circuits using a picosecond photoelectron scanning electron microscope","display_name":"Waveform measurements in high speed silicon bipolar circuits using a picosecond photoelectron scanning electron microscope","publication_year":1987,"publication_date":"1987-01-01","ids":{"openalex":"https://openalex.org/W2575235354","doi":"https://doi.org/10.1109/iedm.1987.191357","mag":"2575235354"},"language":"en","primary_location":{"id":"doi:10.1109/iedm.1987.191357","doi":"https://doi.org/10.1109/iedm.1987.191357","is_oa":false,"landing_page_url":"https://doi.org/10.1109/iedm.1987.191357","pdf_url":null,"source":{"id":"https://openalex.org/S4210168112","display_name":"Technical digest - International Electron Devices Meeting/Technical digest","issn_l":"0163-1918","issn":["0163-1918","2156-017X"],"is_oa":false,"is_in_doaj":false,"is_core":false,"listed_in":[],"host_organization":"https://openalex.org/P4310319808","host_organization_name":"Institute of Electrical and Electronics Engineers","host_organization_lineage":["https://openalex.org/P4310319808"],"host_organization_lineage_names":["Institute of Electrical and Electronics Engineers"],"type":"conference"},"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"1987 International Electron Devices Meeting","raw_type":"proceedings-article"},"volume":null,"type":"conference-paper","is_traditional":true,"indexed_in":["crossref"],"open_access":{"is_oa":false,"oa_status":"closed","oa_url":null,"any_repository_has_fulltext":false},"authorships":[{"author_position":"first","author":{"id":"https://openalex.org/A5054878274","display_name":"Paul G. May","orcid":null,"observed_orcids":[]},"institutions":[{"id":"https://openalex.org/I4210114115","display_name":"IBM Research - Thomas J. Watson Research Center","ror":"https://ror.org/0265w5591","country_code":"US","type":"facility","lineage":["https://openalex.org/I1341412227","https://openalex.org/I4210114115"]}],"countries":["US"],"is_corresponding":false,"raw_author_name":"P. May","raw_affiliation_strings":["IBM Thomas J. Watson Research Center, Yorktown Heights, NY, USA"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"IBM Thomas J. Watson Research Center, Yorktown Heights, NY, USA","institution_ids":["https://openalex.org/I4210114115"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5111610897","display_name":"J.-M. Halbout","orcid":null,"observed_orcids":[]},"institutions":[{"id":"https://openalex.org/I4210114115","display_name":"IBM Research - Thomas J. Watson Research Center","ror":"https://ror.org/0265w5591","country_code":"US","type":"facility","lineage":["https://openalex.org/I1341412227","https://openalex.org/I4210114115"]}],"countries":["US"],"is_corresponding":false,"raw_author_name":"J.-M. Halbout","raw_affiliation_strings":["IBM Thomas J. Watson Research Center, Yorktown Heights, NY, USA"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"IBM Thomas J. Watson Research Center, Yorktown Heights, NY, USA","institution_ids":["https://openalex.org/I4210114115"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5112180178","display_name":"C.T. Chuang","orcid":"https://orcid.org/0000-0001-8795-2394","observed_orcids":["https://orcid.org/0000-0001-8795-2394"]},"institutions":[{"id":"https://openalex.org/I4210114115","display_name":"IBM Research - Thomas J. Watson Research Center","ror":"https://ror.org/0265w5591","country_code":"US","type":"facility","lineage":["https://openalex.org/I1341412227","https://openalex.org/I4210114115"]}],"countries":["US"],"is_corresponding":false,"raw_author_name":"C.T. Chuang","raw_affiliation_strings":["IBM Thomas J. Watson Research Center, Yorktown Heights, NY, USA"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"IBM Thomas J. Watson Research Center, Yorktown Heights, NY, USA","institution_ids":["https://openalex.org/I4210114115"]}]},{"author_position":"last","author":{"id":"https://openalex.org/A5050002872","display_name":"G.P. Li","orcid":null,"observed_orcids":[]},"institutions":[{"id":"https://openalex.org/I4210114115","display_name":"IBM Research - Thomas J. Watson Research Center","ror":"https://ror.org/0265w5591","country_code":"US","type":"facility","lineage":["https://openalex.org/I1341412227","https://openalex.org/I4210114115"]}],"countries":["US"],"is_corresponding":false,"raw_author_name":"G.P. Li","raw_affiliation_strings":["IBM Thomas J. Watson Research Center, Yorktown Heights, NY, USA"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"IBM Thomas J. Watson Research Center, Yorktown Heights, NY, USA","institution_ids":["https://openalex.org/I4210114115"]}]}],"institutions":[],"countries_distinct_count":1,"institutions_distinct_count":1,"corresponding_author_ids":[],"corresponding_institution_ids":["https://openalex.org/I4210114115"],"apc_list":null,"apc_paid":null,"fwci":2.415,"has_fulltext":false,"cited_by_count":2,"citation_normalized_percentile":{"value":0.89311783,"is_in_top_1_percent":false,"is_in_top_10_percent":false},"cited_by_percentile_year":null,"biblio":{"volume":null,"issue":null,"first_page":"92","last_page":"95"},"is_retracted":false,"is_paratext":false,"is_xpac":false,"primary_topic":{"id":"https://openalex.org/T14117","display_name":"Integrated Circuits and Semiconductor Failure Analysis","score":0.9848999977111816,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},"topics":[{"id":"https://openalex.org/T14117","display_name":"Integrated Circuits and Semiconductor Failure Analysis","score":0.9848999977111816,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T12039","display_name":"Electron and X-Ray Spectroscopy Techniques","score":0.0026000000070780516,"subfield":{"id":"https://openalex.org/subfields/2508","display_name":"Surfaces, Coatings and Films"},"field":{"id":"https://openalex.org/fields/25","display_name":"Materials Science"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T11044","display_name":"Particle Detector Development and Performance","score":0.00139999995008111,"subfield":{"id":"https://openalex.org/subfields/3106","display_name":"Nuclear and High Energy Physics"},"field":{"id":"https://openalex.org/fields/31","display_name":"Physics and Astronomy"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}}],"keywords":[{"id":"https://openalex.org/keywords/waveform-measurement","display_name":"waveform measurement","score":0.8130000233650208},{"id":"https://openalex.org/keywords/ecl-circuits","display_name":"ECL circuits","score":0.7799999713897705},{"id":"https://openalex.org/keywords/high-speed-lsi","display_name":"high-speed LSI","score":0.6359999775886536},{"id":"https://openalex.org/keywords/non-contact-measurement","display_name":"non-contact measurement","score":0.796999990940094},{"id":"https://openalex.org/keywords/delay-resolution","display_name":"delay resolution","score":0.6520000100135803},{"id":"https://openalex.org/keywords/picosecond-temporal-resolution","display_name":"picosecond temporal resolution","score":0.593999981880188}],"concepts":[{"id":"https://openalex.org/C197424946","wikidata":"https://www.wikidata.org/wiki/Q1165717","display_name":"Waveform","level":3,"score":0.8141796588897705},{"id":"https://openalex.org/C55005982","wikidata":"https://www.wikidata.org/wiki/Q3902709","display_name":"Picosecond","level":3,"score":0.768379807472229},{"id":"https://openalex.org/C134146338","wikidata":"https://www.wikidata.org/wiki/Q1815901","display_name":"Electronic circuit","level":2,"score":0.6026792526245117},{"id":"https://openalex.org/C192562407","wikidata":"https://www.wikidata.org/wiki/Q228736","display_name":"Materials science","level":0,"score":0.5507647395133972},{"id":"https://openalex.org/C138268822","wikidata":"https://www.wikidata.org/wiki/Q1051925","display_name":"Resolution (logic)","level":2,"score":0.5461704134941101},{"id":"https://openalex.org/C26771246","wikidata":"https://www.wikidata.org/wiki/Q321095","display_name":"Scanning electron microscope","level":2,"score":0.5227582454681396},{"id":"https://openalex.org/C544956773","wikidata":"https://www.wikidata.org/wiki/Q670","display_name":"Silicon","level":2,"score":0.4884897470474243},{"id":"https://openalex.org/C205372480","wikidata":"https://www.wikidata.org/wiki/Q210521","display_name":"Image resolution","level":2,"score":0.4788651168346405},{"id":"https://openalex.org/C119666444","wikidata":"https://www.wikidata.org/wiki/Q5977280","display_name":"Temporal resolution","level":2,"score":0.47023457288742065},{"id":"https://openalex.org/C67649825","wikidata":"https://www.wikidata.org/wiki/Q196538","display_name":"Microscope","level":2,"score":0.4691029489040375},{"id":"https://openalex.org/C14580979","wikidata":"https://www.wikidata.org/wiki/Q876049","display_name":"Very-large-scale integration","level":2,"score":0.45358115434646606},{"id":"https://openalex.org/C2780841128","wikidata":"https://www.wikidata.org/wiki/Q5073781","display_name":"Characterization (materials science)","level":2,"score":0.44420331716537476},{"id":"https://openalex.org/C49040817","wikidata":"https://www.wikidata.org/wiki/Q193091","display_name":"Optoelectronics","level":1,"score":0.3781183958053589},{"id":"https://openalex.org/C41008148","wikidata":"https://www.wikidata.org/wiki/Q21198","display_name":"Computer science","level":0,"score":0.33719033002853394},{"id":"https://openalex.org/C119599485","wikidata":"https://www.wikidata.org/wiki/Q43035","display_name":"Electrical engineering","level":1,"score":0.32705745100975037},{"id":"https://openalex.org/C120665830","wikidata":"https://www.wikidata.org/wiki/Q14620","display_name":"Optics","level":1,"score":0.3179889917373657},{"id":"https://openalex.org/C165801399","wikidata":"https://www.wikidata.org/wiki/Q25428","display_name":"Voltage","level":2,"score":0.30426937341690063},{"id":"https://openalex.org/C121332964","wikidata":"https://www.wikidata.org/wiki/Q413","display_name":"Physics","level":0,"score":0.23609787225723267},{"id":"https://openalex.org/C171250308","wikidata":"https://www.wikidata.org/wiki/Q11468","display_name":"Nanotechnology","level":1,"score":0.17865872383117676},{"id":"https://openalex.org/C127413603","wikidata":"https://www.wikidata.org/wiki/Q11023","display_name":"Engineering","level":0,"score":0.12443029880523682},{"id":"https://openalex.org/C154945302","wikidata":"https://www.wikidata.org/wiki/Q11660","display_name":"Artificial intelligence","level":1,"score":0.0702272355556488},{"id":"https://openalex.org/C520434653","wikidata":"https://www.wikidata.org/wiki/Q38867","display_name":"Laser","level":2,"score":0.0}],"mesh":[],"locations_count":1,"locations":[{"id":"doi:10.1109/iedm.1987.191357","doi":"https://doi.org/10.1109/iedm.1987.191357","is_oa":false,"landing_page_url":"https://doi.org/10.1109/iedm.1987.191357","pdf_url":null,"source":{"id":"https://openalex.org/S4210168112","display_name":"Technical digest - International Electron Devices Meeting/Technical digest","issn_l":"0163-1918","issn":["0163-1918","2156-017X"],"is_oa":false,"is_in_doaj":false,"is_core":false,"listed_in":[],"host_organization":"https://openalex.org/P4310319808","host_organization_name":"Institute of Electrical and Electronics Engineers","host_organization_lineage":["https://openalex.org/P4310319808"],"host_organization_lineage_names":["Institute of Electrical and Electronics Engineers"],"type":"conference"},"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"1987 International Electron Devices Meeting","raw_type":"proceedings-article"}],"best_oa_location":null,"sustainable_development_goals":[],"study_designs":[],"awards":[],"funders":[],"has_content":{"grobid_xml":false,"pdf":false},"content_urls":null,"referenced_works_count":1,"referenced_works":["https://openalex.org/W2079531543"],"related_works":["https://openalex.org/W1975774639","https://openalex.org/W2058283500","https://openalex.org/W7056425702","https://openalex.org/W2130997530","https://openalex.org/W2079531543","https://openalex.org/W2014590181","https://openalex.org/W4321641394","https://openalex.org/W2158008190","https://openalex.org/W2060121909","https://openalex.org/W4247703151"],"abstract_inverted_index":{"This":[0],"paper":[1],"describes":[2],"a":[3,19,35],"non-contact":[4],"waveform":[5],"measurement":[6],"technique":[7,44],"for":[8],"the":[9,43,49,55,59,62,74],"characterization":[10,76],"of":[11,38,42,58,77],"high":[12],"speed":[13],"LSI":[14],"and":[15,34,47,52],"VLSI":[16],"circuits":[17],"using":[18],"Picosecond":[20],"Photoelectron":[21],"Scanning":[22],"Electron":[23],"Microscope":[24],"with":[25],"5":[26],"ps":[27,79],"temporal":[28],"resolution,":[29],"0.1":[30],"\u00b5m":[31],"spatial":[32],"resolution":[33,37],"voltage":[36],"3mV/(Hz)1/2.":[39],"The":[40],"capability":[41],"to":[45,53,73],"measure":[46],"monitor":[48],"internal":[50],"waveforms":[51],"resolve":[54],"different":[56],"contributions":[57],"delay":[60],"in":[61],"circuit":[63],"without":[64],"any":[65],"loading":[66],"effect":[67],"is":[68],"demonstrated":[69],"by":[70],"its":[71],"application":[72],"full":[75],"sub-100":[78],"silicon":[80],"bipolar":[81],"ECL":[82],"circuits.":[83]},"counts_by_year":[],"updated_date":"2026-10-06T10:28:23.643775","created_date":"2017-01-26T00:00:00"}