{"id":"https://openalex.org/W2564558741","doi":null,"title":"INFLUENCE OF THE TWO-DIMENSIONAL ANALYSIS ON THE MESFET TRANSISTOR CHARACTERISTICS","display_name":"INFLUENCE OF THE TWO-DIMENSIONAL ANALYSIS ON THE MESFET TRANSISTOR CHARACTERISTICS","publication_year":2015,"publication_date":"2015-10-29","ids":{"openalex":"https://openalex.org/W2564558741","mag":"2564558741"},"language":"en","primary_location":{"id":"pmh:oai:CiteSeerX.psu:10.1.1.665.9960","doi":null,"is_oa":false,"landing_page_url":"http://citeseerx.ist.psu.edu/viewdoc/summary?doi=10.1.1.665.9960","pdf_url":null,"source":null,"license":null,"license_id":null,"version":"submittedVersion","is_accepted":false,"is_published":false,"raw_source_name":"http://www.jeldev.org/20_Mella+Saida.pdf","raw_type":"text"},"volume":null,"type":"article","indexed_in":[],"open_access":{"is_oa":false,"oa_status":"closed","oa_url":null,"any_repository_has_fulltext":false},"authorships":[{"author_position":"first","author":{"id":"https://openalex.org/A5024574199","display_name":"Saida Mellal","orcid":null,"observed_orcids":[]},"institutions":[],"countries":[],"is_corresponding":false,"raw_author_name":"Saida Mellal","raw_affiliation_strings":[],"raw_orcid":null,"affiliations":[]},{"author_position":"middle","author":{"id":"https://openalex.org/A5000328806","display_name":"Ch\u00e9rifa Azizi","orcid":null,"observed_orcids":[]},"institutions":[],"countries":[],"is_corresponding":false,"raw_author_name":"Cherifa Azizi","raw_affiliation_strings":[],"raw_orcid":null,"affiliations":[]},{"author_position":"middle","author":{"id":"https://openalex.org/A5070034865","display_name":"Mourad Zaabat","orcid":"https://orcid.org/0000-0003-1983-6927","observed_orcids":["https://orcid.org/0000-0003-1983-6927"]},"institutions":[],"countries":[],"is_corresponding":false,"raw_author_name":"Mourad Zaabat","raw_affiliation_strings":[],"raw_orcid":null,"affiliations":[]},{"author_position":"middle","author":{"id":"https://openalex.org/A5057188614","display_name":"Toufik Ziar","orcid":"https://orcid.org/0000-0002-6476-2288","observed_orcids":["https://orcid.org/0000-0002-6476-2288"]},"institutions":[],"countries":[],"is_corresponding":false,"raw_author_name":"Toufik Ziar","raw_affiliation_strings":[],"raw_orcid":null,"affiliations":[]},{"author_position":"middle","author":{"id":null,"display_name":"Larbi Ben M\u2019hidi University","orcid":null,"observed_orcids":[]},"institutions":[],"countries":[],"is_corresponding":false,"raw_author_name":"Larbi Ben M\u2019hidi University","raw_affiliation_strings":[],"raw_orcid":null,"affiliations":[]},{"author_position":"last","author":{"id":null,"display_name":"Oum El Bouaghi \u2013alg\u00e9ria","orcid":null,"observed_orcids":[]},"institutions":[],"countries":[],"is_corresponding":false,"raw_author_name":"Oum El Bouaghi \u2013alg\u00e9ria","raw_affiliation_strings":[],"raw_orcid":null,"affiliations":[]}],"institutions":[],"countries_distinct_count":0,"institutions_distinct_count":0,"corresponding_author_ids":[],"corresponding_institution_ids":[],"apc_list":null,"apc_paid":null,"fwci":0.1607,"has_fulltext":false,"cited_by_count":1,"citation_normalized_percentile":{"value":0.62587394,"is_in_top_1_percent":false,"is_in_top_10_percent":false},"cited_by_percentile_year":{"min":89,"max":94},"biblio":{"volume":null,"issue":null,"first_page":null,"last_page":null},"is_retracted":false,"is_paratext":false,"is_xpac":false,"primary_topic":{"id":"https://openalex.org/T10558","display_name":"Advancements in Semiconductor Devices and Circuit Design","score":0.9932000041007996,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},"topics":[{"id":"https://openalex.org/T10558","display_name":"Advancements in Semiconductor Devices and Circuit Design","score":0.9932000041007996,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T10472","display_name":"Semiconductor materials and devices","score":0.0017999999690800905,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T11853","display_name":"Semiconductor materials and interfaces","score":0.0010000000474974513,"subfield":{"id":"https://openalex.org/subfields/3107","display_name":"Atomic and Molecular Physics, and Optics"},"field":{"id":"https://openalex.org/fields/31","display_name":"Physics and Astronomy"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}}],"keywords":[{"id":"https://openalex.org/keywords/metal-semiconductor-field-effect-transistors","display_name":"MESFET","score":0.8709999918937683},{"id":"https://openalex.org/keywords/gaas-field-effect-transistors","display_name":"GaAs field-effect transistors","score":0.75},{"id":"https://openalex.org/keywords/two-dimensional-device-simulation","display_name":"two-dimensional device simulation","score":0.7450000047683716},{"id":"https://openalex.org/keywords/short-gate-length","display_name":"short gate length","score":0.8259999752044678},{"id":"https://openalex.org/keywords/static-characteristics","display_name":"static characteristics","score":0.7379999756813049},{"id":"https://openalex.org/keywords/transconductance","display_name":"transconductance","score":0.9929999709129333},{"id":"https://openalex.org/keywords/drain-conductance","display_name":"drain conductance","score":0.9869999885559082}],"concepts":[{"id":"https://openalex.org/C134123091","wikidata":"https://www.wikidata.org/wiki/Q1837339","display_name":"MESFET","level":5,"score":0.9054697751998901},{"id":"https://openalex.org/C2779283907","wikidata":"https://www.wikidata.org/wiki/Q1632964","display_name":"Transconductance","level":4,"score":0.7373702526092529},{"id":"https://openalex.org/C172385210","wikidata":"https://www.wikidata.org/wiki/Q5339","display_name":"Transistor","level":3,"score":0.6434824466705322},{"id":"https://openalex.org/C145598152","wikidata":"https://www.wikidata.org/wiki/Q176097","display_name":"Field-effect transistor","level":4,"score":0.5174258947372437},{"id":"https://openalex.org/C121932024","wikidata":"https://www.wikidata.org/wiki/Q5159376","display_name":"Conductance","level":2,"score":0.4877181947231293},{"id":"https://openalex.org/C192562407","wikidata":"https://www.wikidata.org/wiki/Q228736","display_name":"Materials science","level":0,"score":0.35508623719215393},{"id":"https://openalex.org/C49040817","wikidata":"https://www.wikidata.org/wiki/Q193091","display_name":"Optoelectronics","level":1,"score":0.33167994022369385},{"id":"https://openalex.org/C24326235","wikidata":"https://www.wikidata.org/wiki/Q126095","display_name":"Electronic engineering","level":1,"score":0.3283481299877167},{"id":"https://openalex.org/C121332964","wikidata":"https://www.wikidata.org/wiki/Q413","display_name":"Physics","level":0,"score":0.3122031092643738},{"id":"https://openalex.org/C127413603","wikidata":"https://www.wikidata.org/wiki/Q11023","display_name":"Engineering","level":0,"score":0.2778167128562927},{"id":"https://openalex.org/C26873012","wikidata":"https://www.wikidata.org/wiki/Q214781","display_name":"Condensed matter physics","level":1,"score":0.250223845243454},{"id":"https://openalex.org/C119599485","wikidata":"https://www.wikidata.org/wiki/Q43035","display_name":"Electrical engineering","level":1,"score":0.23250547051429749},{"id":"https://openalex.org/C165801399","wikidata":"https://www.wikidata.org/wiki/Q25428","display_name":"Voltage","level":2,"score":0.07069116830825806}],"mesh":[],"locations_count":1,"locations":[{"id":"pmh:oai:CiteSeerX.psu:10.1.1.665.9960","doi":null,"is_oa":false,"landing_page_url":"http://citeseerx.ist.psu.edu/viewdoc/summary?doi=10.1.1.665.9960","pdf_url":null,"source":null,"license":null,"license_id":null,"version":"submittedVersion","is_accepted":false,"is_published":false,"raw_source_name":"http://www.jeldev.org/20_Mella+Saida.pdf","raw_type":"text"}],"best_oa_location":null,"sustainable_development_goals":[],"study_designs":[],"awards":[],"funders":[],"has_content":{"pdf":false,"grobid_xml":false},"content_urls":null,"referenced_works_count":4,"referenced_works":["https://openalex.org/W2009852498","https://openalex.org/W2030790955","https://openalex.org/W2070289695","https://openalex.org/W2075334934"],"related_works":["https://openalex.org/W2345377767","https://openalex.org/W7097036272","https://openalex.org/W1534322570","https://openalex.org/W2042984087","https://openalex.org/W2296001388","https://openalex.org/W2344685899","https://openalex.org/W2089777696","https://openalex.org/W2982488103","https://openalex.org/W7100978071","https://openalex.org/W3197573357"],"abstract_inverted_index":{"A":[0],"two-dimensional":[1,58],"numerical":[2],"analysis":[3,59],"is":[4,16],"presented":[5],"to":[6,18,75],"investigate":[7],"the":[8,19,29,42,48,54,57,61],"field":[9],"effect":[10],"transistor":[11],"characteristics.":[12],"Our":[13],"main":[14],"aim":[15],"related":[17],"optimization":[20],"of":[21,32,47,56,63],"a":[22],"two":[23],"dimensional":[24],"(2D)":[25],"analytical":[26],"model":[27,38,73],"for":[28],"static":[30],"characteristics":[31],"short":[33],"gate-length":[34],"GaAs":[35],"MESFET\u2019s.":[36],"The":[37,71,81],"takes":[39],"into":[40],"account":[41],"different":[43],"physical":[44],"specific":[45],"phenomena":[46],"device":[49],"and":[50,68,77,87],"we":[51],"consider":[52],"also":[53],"influence":[55],"on":[60],"variation":[62],"some":[64],"intrinsic":[65],"elements":[66],"(transconductance":[67],"drain":[69],"conductance).":[70],"suggested":[72],"enables":[74],"calculate":[76],"trace":[78],"informative":[79],"curves.":[80],"results":[82],"obtained":[83],"are":[84],"well":[85],"represented":[86],"interpreted.":[88]},"counts_by_year":[{"year":2017,"cited_by_count":1}],"updated_date":"2026-09-22T06:50:58.402377","created_date":"2025-10-27T00:00:00"}