{"id":"https://openalex.org/W2561246903","doi":null,"title":"COMPARATIVE ANALYSIS OF LEAKAGE POWER WITH 10 NM CHANNEL LENGTH IN MOSFET/CNTFET DEVICES","display_name":"COMPARATIVE ANALYSIS OF LEAKAGE POWER WITH 10 NM CHANNEL LENGTH IN MOSFET/CNTFET DEVICES","publication_year":2015,"publication_date":"2015-10-29","ids":{"openalex":"https://openalex.org/W2561246903","mag":"2561246903"},"language":"en","primary_location":{"id":"pmh:oai:CiteSeerX.psu:10.1.1.666.9512","doi":null,"is_oa":false,"landing_page_url":"http://citeseerx.ist.psu.edu/viewdoc/summary?doi=10.1.1.666.9512","pdf_url":null,"source":null,"license":null,"license_id":null,"version":"submittedVersion","is_accepted":false,"is_published":false,"raw_source_name":"http://www.jeldev.org/20_Sanjeet.pdf","raw_type":"text"},"volume":null,"type":"article","is_traditional":true,"indexed_in":[],"open_access":{"is_oa":false,"oa_status":"closed","oa_url":null,"any_repository_has_fulltext":false},"authorships":[{"author_position":"first","author":{"id":"https://openalex.org/A5023621988","display_name":"Sanjeet Kumar Sinha","orcid":"https://orcid.org/0000-0002-7581-4645","observed_orcids":["https://orcid.org/0000-0002-7581-4645"]},"institutions":[],"countries":[],"is_corresponding":false,"raw_author_name":"Sanjeet Kumar Sinha","raw_affiliation_strings":[],"raw_orcid":null,"affiliations":[]},{"author_position":"last","author":{"id":"https://openalex.org/A5047103341","display_name":"Saurabh Chaudhury","orcid":"https://orcid.org/0000-0001-8116-1903","observed_orcids":["https://orcid.org/0000-0001-8116-1903"]},"institutions":[],"countries":[],"is_corresponding":false,"raw_author_name":"Saurabh Chaudhury","raw_affiliation_strings":[],"raw_orcid":null,"affiliations":[]}],"institutions":[],"countries_distinct_count":0,"institutions_distinct_count":0,"corresponding_author_ids":[],"corresponding_institution_ids":[],"apc_list":null,"apc_paid":null,"fwci":0.1554,"has_fulltext":false,"cited_by_count":1,"citation_normalized_percentile":{"value":0.55111633,"is_in_top_1_percent":false,"is_in_top_10_percent":false},"cited_by_percentile_year":{"min":88,"max":93},"biblio":{"volume":null,"issue":null,"first_page":null,"last_page":null},"is_retracted":false,"is_paratext":false,"is_xpac":false,"primary_topic":{"id":"https://openalex.org/T10558","display_name":"Advancements in Semiconductor Devices and Circuit Design","score":0.9980000257492065,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},"topics":[{"id":"https://openalex.org/T10558","display_name":"Advancements in Semiconductor Devices and Circuit Design","score":0.9980000257492065,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T10363","display_name":"Low-power high-performance VLSI design","score":0.00039999998989515007,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T10083","display_name":"Graphene research and applications","score":0.00019999999494757503,"subfield":{"id":"https://openalex.org/subfields/2505","display_name":"Materials Chemistry"},"field":{"id":"https://openalex.org/fields/25","display_name":"Materials Science"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}}],"keywords":[{"id":"https://openalex.org/keywords/leakage-power","display_name":"leakage power","score":0.9869999885559082},{"id":"https://openalex.org/keywords/carbon-nanotube-field-effect-transistors","display_name":"carbon nanotube field-effect transistors","score":0.8870000243186951},{"id":"https://openalex.org/keywords/mosfet","display_name":"MOSFET","score":0.9070000052452087},{"id":"https://openalex.org/keywords/channel-length-scaling","display_name":"channel length scaling","score":0.8980000019073486},{"id":"https://openalex.org/keywords/threshold-voltage","display_name":"threshold voltage","score":0.8859999775886536},{"id":"https://openalex.org/keywords/nanoscale-transistors","display_name":"nanoscale transistors","score":0.7089999914169312},{"id":"https://openalex.org/keywords/power-consumption","display_name":"power consumption","score":0.5440000295639038}],"concepts":[{"id":"https://openalex.org/C171291426","wikidata":"https://www.wikidata.org/wiki/Q5072499","display_name":"Channel length modulation","level":5,"score":0.7997267246246338},{"id":"https://openalex.org/C2778413303","wikidata":"https://www.wikidata.org/wiki/Q210793","display_name":"MOSFET","level":4,"score":0.7714704275131226},{"id":"https://openalex.org/C195370968","wikidata":"https://www.wikidata.org/wiki/Q1754002","display_name":"Threshold voltage","level":4,"score":0.7287113666534424},{"id":"https://openalex.org/C11918236","wikidata":"https://www.wikidata.org/wiki/Q7501554","display_name":"Short-channel effect","level":5,"score":0.7197815775871277},{"id":"https://openalex.org/C58916441","wikidata":"https://www.wikidata.org/wiki/Q1778563","display_name":"Carbon nanotube field-effect transistor","level":5,"score":0.7171465158462524},{"id":"https://openalex.org/C2777042071","wikidata":"https://www.wikidata.org/wiki/Q6509304","display_name":"Leakage (economics)","level":2,"score":0.6729005575180054},{"id":"https://openalex.org/C73118932","wikidata":"https://www.wikidata.org/wiki/Q5305541","display_name":"Drain-induced barrier lowering","level":5,"score":0.6574026942253113},{"id":"https://openalex.org/C33556034","wikidata":"https://www.wikidata.org/wiki/Q7318266","display_name":"Reverse short-channel effect","level":5,"score":0.608992874622345},{"id":"https://openalex.org/C99844830","wikidata":"https://www.wikidata.org/wiki/Q102441924","display_name":"Scaling","level":2,"score":0.5014209747314453},{"id":"https://openalex.org/C165801399","wikidata":"https://www.wikidata.org/wiki/Q25428","display_name":"Voltage","level":2,"score":0.5000035762786865},{"id":"https://openalex.org/C119599485","wikidata":"https://www.wikidata.org/wiki/Q43035","display_name":"Electrical engineering","level":1,"score":0.4932681918144226},{"id":"https://openalex.org/C77066764","wikidata":"https://www.wikidata.org/wiki/Q178674","display_name":"Nanometre","level":2,"score":0.44770103693008423},{"id":"https://openalex.org/C127162648","wikidata":"https://www.wikidata.org/wiki/Q16858953","display_name":"Channel (broadcasting)","level":2,"score":0.42633652687072754},{"id":"https://openalex.org/C192562407","wikidata":"https://www.wikidata.org/wiki/Q228736","display_name":"Materials science","level":0,"score":0.41060370206832886},{"id":"https://openalex.org/C49040817","wikidata":"https://www.wikidata.org/wiki/Q193091","display_name":"Optoelectronics","level":1,"score":0.3922465741634369},{"id":"https://openalex.org/C145598152","wikidata":"https://www.wikidata.org/wiki/Q176097","display_name":"Field-effect transistor","level":4,"score":0.3355526328086853},{"id":"https://openalex.org/C172385210","wikidata":"https://www.wikidata.org/wiki/Q5339","display_name":"Transistor","level":3,"score":0.31229278445243835},{"id":"https://openalex.org/C127413603","wikidata":"https://www.wikidata.org/wiki/Q11023","display_name":"Engineering","level":0,"score":0.18094214797019958},{"id":"https://openalex.org/C33923547","wikidata":"https://www.wikidata.org/wiki/Q395","display_name":"Mathematics","level":0,"score":0.08712175488471985},{"id":"https://openalex.org/C162324750","wikidata":"https://www.wikidata.org/wiki/Q8134","display_name":"Economics","level":0,"score":0.0},{"id":"https://openalex.org/C159985019","wikidata":"https://www.wikidata.org/wiki/Q181790","display_name":"Composite material","level":1,"score":0.0},{"id":"https://openalex.org/C139719470","wikidata":"https://www.wikidata.org/wiki/Q39680","display_name":"Macroeconomics","level":1,"score":0.0},{"id":"https://openalex.org/C2524010","wikidata":"https://www.wikidata.org/wiki/Q8087","display_name":"Geometry","level":1,"score":0.0}],"mesh":[],"locations_count":1,"locations":[{"id":"pmh:oai:CiteSeerX.psu:10.1.1.666.9512","doi":null,"is_oa":false,"landing_page_url":"http://citeseerx.ist.psu.edu/viewdoc/summary?doi=10.1.1.666.9512","pdf_url":null,"source":null,"license":null,"license_id":null,"version":"submittedVersion","is_accepted":false,"is_published":false,"raw_source_name":"http://www.jeldev.org/20_Sanjeet.pdf","raw_type":"text"}],"best_oa_location":null,"sustainable_development_goals":[],"study_designs":[],"awards":[],"funders":[],"has_content":{"pdf":false,"grobid_xml":false},"content_urls":null,"referenced_works_count":18,"referenced_works":["https://openalex.org/W1513321573","https://openalex.org/W1965020427","https://openalex.org/W1966325235","https://openalex.org/W1966943929","https://openalex.org/W1993896794","https://openalex.org/W2002738781","https://openalex.org/W2003498195","https://openalex.org/W2021788585","https://openalex.org/W2045245306","https://openalex.org/W2067316052","https://openalex.org/W2090734667","https://openalex.org/W2100977303","https://openalex.org/W2113490397","https://openalex.org/W2147516461","https://openalex.org/W2148873990","https://openalex.org/W2156694126","https://openalex.org/W2172161464","https://openalex.org/W2464904768"],"related_works":["https://openalex.org/W1991749407","https://openalex.org/W2075215083","https://openalex.org/W2071746742","https://openalex.org/W4401018151","https://openalex.org/W2588806935","https://openalex.org/W2548866678","https://openalex.org/W2891202521","https://openalex.org/W2016581333","https://openalex.org/W2493040365","https://openalex.org/W4247553696"],"abstract_inverted_index":{"The":[0,125],"exponential":[1],"increase":[2,126],"of":[3,14,77,83,92,111],"leakage":[4,41,137],"currents":[5],"in":[6,30,114,122,127,130],"a":[7,22,108,145],"scaled":[8,28],"device":[9],"is":[10,36,117],"an":[11,90],"inevitable":[12],"consequence":[13],"MOSFET":[15,87,123],"physics.":[16],"Unfortunately":[17],"constant":[18],"field":[19],"scaling":[20],"reaches":[21],"performance":[23],"limit.":[24],"As":[25],"the":[26,33,40,45,51,55,59,64,75,84,99,136,141],"devices":[27],"down":[29],"nanometer":[31,131],"regime":[32,132],"threshold":[34,81,100,128],"voltage":[35,82,101,129],"also":[37],"scaled,":[38],"consequently":[39],"power":[42,138,146],"increases.":[43],"If":[44],"channel":[46,78,105,112],"length":[47,79,106,113],"becomes":[48],"too":[49],"short,":[50],"depletion":[52],"region":[53],"from":[54],"drain":[56],"can":[57],"reach":[58],"source":[60],"side":[61],"and":[62,86,139],"reduces":[63],"barrier":[65],"for":[66],"electron":[67],"injection.":[68],"In":[69],"this":[70],"paper":[71],"we":[72,96],"have":[73],"analyzed":[74],"impact":[76],"over":[80,107],"CNTFET":[85,115,142],"devices.":[88,124,148],"With":[89],"analysis":[91],"HSPICE":[93],"simulation":[94],"results":[95],"found":[97],"that":[98,116],"increases":[102],"with":[103],"decreasing":[104],"wide":[109],"range":[110],"not":[118],"possible":[119],"to":[120,134],"get":[121],"leads":[133],"reduce":[135],"hence":[140],"emerges":[143],"as":[144],"saving":[147]},"counts_by_year":[{"year":2015,"cited_by_count":1}],"updated_date":"2026-11-04T10:54:05.112534","created_date":"2025-10-27T00:00:00"}