{"id":"https://openalex.org/W2531994522","doi":"https://doi.org/10.1109/iedm.1998.746432","title":"Ultra thin high quality Ta/sub 2/O/sub 5/ gate dielectric prepared by in-situ rapid thermal processing","display_name":"Ultra thin high quality Ta/sub 2/O/sub 5/ gate dielectric prepared by in-situ rapid thermal processing","publication_year":2002,"publication_date":"2002-11-27","ids":{"openalex":"https://openalex.org/W2531994522","doi":"https://doi.org/10.1109/iedm.1998.746432","mag":"2531994522"},"language":"en","primary_location":{"id":"doi:10.1109/iedm.1998.746432","doi":"https://doi.org/10.1109/iedm.1998.746432","is_oa":false,"landing_page_url":"https://doi.org/10.1109/iedm.1998.746432","pdf_url":null,"source":{"id":"https://openalex.org/S4210168112","display_name":"Technical digest - International Electron Devices Meeting/Technical digest","issn_l":"0163-1918","issn":["0163-1918","2156-017X"],"is_oa":false,"is_in_doaj":false,"is_core":false,"listed_in":[],"host_organization":"https://openalex.org/P4310319808","host_organization_name":"Institute of Electrical and Electronics Engineers","host_organization_lineage":["https://openalex.org/P4310319808"],"host_organization_lineage_names":["Institute of Electrical and Electronics Engineers"],"type":"conference"},"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"International Electron Devices Meeting 1998. Technical Digest (Cat. No.98CH36217)","raw_type":"proceedings-article"},"volume":null,"type":"conference-paper","is_traditional":true,"indexed_in":["crossref"],"open_access":{"is_oa":false,"oa_status":"closed","oa_url":null,"any_repository_has_fulltext":false},"authorships":[{"author_position":"first","author":{"id":"https://openalex.org/A5073256732","display_name":"H.F. Luan","orcid":"https://orcid.org/0009-0008-7250-4685","observed_orcids":["https://orcid.org/0009-0008-7250-4685"]},"institutions":[{"id":"https://openalex.org/I86519309","display_name":"The University of Texas at Austin","ror":"https://ror.org/00hj54h04","country_code":"US","type":"education","lineage":["https://openalex.org/I86519309"]}],"countries":["US"],"is_corresponding":false,"raw_author_name":"H.F. Luan","raw_affiliation_strings":["Microelectronics Research Center, Department of Electrical and Computer Engineering, University of Technology, Austin, TX, USA"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Microelectronics Research Center, Department of Electrical and Computer Engineering, University of Technology, Austin, TX, USA","institution_ids":["https://openalex.org/I86519309"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5071986300","display_name":"Bone-Fong Wu","orcid":null,"observed_orcids":[]},"institutions":[{"id":"https://openalex.org/I86519309","display_name":"The University of Texas at Austin","ror":"https://ror.org/00hj54h04","country_code":"US","type":"education","lineage":["https://openalex.org/I86519309"]}],"countries":["US"],"is_corresponding":false,"raw_author_name":"B.Z. Wu","raw_affiliation_strings":["Microelectronics Research Center, Department of Electrical and Computer Engineering, University of Technology, Austin, TX, USA"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Microelectronics Research Center, Department of Electrical and Computer Engineering, University of Technology, Austin, TX, USA","institution_ids":["https://openalex.org/I86519309"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5111610522","display_name":"Laegu Kang","orcid":null,"observed_orcids":[]},"institutions":[{"id":"https://openalex.org/I86519309","display_name":"The University of Texas at Austin","ror":"https://ror.org/00hj54h04","country_code":"US","type":"education","lineage":["https://openalex.org/I86519309"]}],"countries":["US"],"is_corresponding":false,"raw_author_name":"L.G. Kang","raw_affiliation_strings":["Microelectronics Research Center, Department of Electrical and Computer Engineering, University of Technology, Austin, TX, USA"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Microelectronics Research Center, Department of Electrical and Computer Engineering, University of Technology, Austin, TX, USA","institution_ids":["https://openalex.org/I86519309"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5040372632","display_name":"B.Y. Kim","orcid":null,"observed_orcids":[]},"institutions":[{"id":"https://openalex.org/I86519309","display_name":"The University of Texas at Austin","ror":"https://ror.org/00hj54h04","country_code":"US","type":"education","lineage":["https://openalex.org/I86519309"]}],"countries":["US"],"is_corresponding":false,"raw_author_name":"B.Y. Kim","raw_affiliation_strings":["Microelectronics Research Center, Department of Electrical and Computer Engineering, University of Technology, Austin, TX, USA"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Microelectronics Research Center, Department of Electrical and Computer Engineering, University of Technology, Austin, TX, USA","institution_ids":["https://openalex.org/I86519309"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5038542010","display_name":"Raymond N. Vrtis","orcid":null,"observed_orcids":[]},"institutions":[],"countries":[],"is_corresponding":false,"raw_author_name":"R. Vrtis","raw_affiliation_strings":[],"raw_orcid":null,"affiliations":[]},{"author_position":"middle","author":{"id":"https://openalex.org/A5047900988","display_name":"David A. Roberts","orcid":"https://orcid.org/0000-0003-0261-691X","observed_orcids":["https://orcid.org/0000-0003-0261-691X"]},"institutions":[],"countries":[],"is_corresponding":false,"raw_author_name":"D. Roberts","raw_affiliation_strings":[],"raw_orcid":null,"affiliations":[]},{"author_position":"last","author":{"id":"https://openalex.org/A5000722615","display_name":"D. L. Kwong","orcid":null,"observed_orcids":[]},"institutions":[{"id":"https://openalex.org/I86519309","display_name":"The University of Texas at Austin","ror":"https://ror.org/00hj54h04","country_code":"US","type":"education","lineage":["https://openalex.org/I86519309"]}],"countries":["US"],"is_corresponding":false,"raw_author_name":"D.L. Kwong","raw_affiliation_strings":["Microelectronics Research Center, Department of Electrical and Computer Engineering, University of Technology, Austin, TX, USA"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Microelectronics Research Center, Department of Electrical and Computer Engineering, University of Technology, Austin, TX, USA","institution_ids":["https://openalex.org/I86519309"]}]}],"institutions":[],"countries_distinct_count":1,"institutions_distinct_count":1,"corresponding_author_ids":[],"corresponding_institution_ids":[],"apc_list":null,"apc_paid":null,"fwci":1.8772,"has_fulltext":false,"cited_by_count":12,"citation_normalized_percentile":{"value":0.86869127,"is_in_top_1_percent":false,"is_in_top_10_percent":false},"cited_by_percentile_year":null,"biblio":{"volume":null,"issue":null,"first_page":"609","last_page":"612"},"is_retracted":false,"is_paratext":false,"is_xpac":false,"primary_topic":{"id":"https://openalex.org/T10472","display_name":"Semiconductor materials and devices","score":0.9955999851226807,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},"topics":[{"id":"https://openalex.org/T10472","display_name":"Semiconductor materials and devices","score":0.9955999851226807,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T11661","display_name":"Copper Interconnects and Reliability","score":0.003100000089034438,"subfield":{"id":"https://openalex.org/subfields/2504","display_name":"Electronic, Optical and Magnetic Materials"},"field":{"id":"https://openalex.org/fields/25","display_name":"Materials Science"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T12808","display_name":"Ferroelectric and Negative Capacitance Devices","score":0.00039999998989515007,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}}],"keywords":[{"id":"https://openalex.org/keywords/ta2o5","display_name":"tantalum pentoxide","score":0.8619999885559082},{"id":"https://openalex.org/keywords/ultrathin-gate-dielectrics","display_name":"ultrathin gate dielectrics","score":0.8519999980926514},{"id":"https://openalex.org/keywords/chemical-vapor-deposition","display_name":"chemical vapor deposition","score":0.8029999732971191},{"id":"https://openalex.org/keywords/leakage-current","display_name":"leakage current","score":0.9229999780654907},{"id":"https://openalex.org/keywords/interface-properties","display_name":"interface properties","score":0.7620000243186951},{"id":"https://openalex.org/keywords/dielectric-reliability","display_name":"dielectric reliability","score":0.8949999809265137},{"id":"https://openalex.org/keywords/mosfet-gate","display_name":"MOSFET gate","score":0.5989999771118164}],"concepts":[{"id":"https://openalex.org/C192562407","wikidata":"https://www.wikidata.org/wiki/Q228736","display_name":"Materials science","level":0,"score":0.7614670991897583},{"id":"https://openalex.org/C133386390","wikidata":"https://www.wikidata.org/wiki/Q184996","display_name":"Dielectric","level":2,"score":0.7513991594314575},{"id":"https://openalex.org/C72832162","wikidata":"https://www.wikidata.org/wiki/Q2131545","display_name":"Rapid thermal processing","level":3,"score":0.7233497500419617},{"id":"https://openalex.org/C2777822432","wikidata":"https://www.wikidata.org/wiki/Q216681","display_name":"In situ","level":2,"score":0.6946126818656921},{"id":"https://openalex.org/C43214815","wikidata":"https://www.wikidata.org/wiki/Q7310987","display_name":"Reliability (semiconductor)","level":3,"score":0.5731847882270813},{"id":"https://openalex.org/C49040817","wikidata":"https://www.wikidata.org/wiki/Q193091","display_name":"Optoelectronics","level":1,"score":0.4847509562969208},{"id":"https://openalex.org/C166972891","wikidata":"https://www.wikidata.org/wiki/Q5527011","display_name":"Gate dielectric","level":4,"score":0.48242315649986267},{"id":"https://openalex.org/C19067145","wikidata":"https://www.wikidata.org/wiki/Q1137203","display_name":"Thin film","level":2,"score":0.4748946726322174},{"id":"https://openalex.org/C2777042071","wikidata":"https://www.wikidata.org/wiki/Q6509304","display_name":"Leakage (economics)","level":2,"score":0.47208520770072937},{"id":"https://openalex.org/C70401718","wikidata":"https://www.wikidata.org/wiki/Q343241","display_name":"Dielectric strength","level":3,"score":0.436404824256897},{"id":"https://openalex.org/C204530211","wikidata":"https://www.wikidata.org/wiki/Q752823","display_name":"Thermal","level":2,"score":0.43160033226013184},{"id":"https://openalex.org/C24326235","wikidata":"https://www.wikidata.org/wiki/Q126095","display_name":"Electronic engineering","level":1,"score":0.3624000549316406},{"id":"https://openalex.org/C113196181","wikidata":"https://www.wikidata.org/wiki/Q485223","display_name":"Analytical Chemistry (journal)","level":2,"score":0.3213329315185547},{"id":"https://openalex.org/C119599485","wikidata":"https://www.wikidata.org/wiki/Q43035","display_name":"Electrical engineering","level":1,"score":0.2988697290420532},{"id":"https://openalex.org/C544956773","wikidata":"https://www.wikidata.org/wiki/Q670","display_name":"Silicon","level":2,"score":0.2425040304660797},{"id":"https://openalex.org/C171250308","wikidata":"https://www.wikidata.org/wiki/Q11468","display_name":"Nanotechnology","level":1,"score":0.18673714995384216},{"id":"https://openalex.org/C185592680","wikidata":"https://www.wikidata.org/wiki/Q2329","display_name":"Chemistry","level":0,"score":0.08771216869354248},{"id":"https://openalex.org/C127413603","wikidata":"https://www.wikidata.org/wiki/Q11023","display_name":"Engineering","level":0,"score":0.0697699785232544},{"id":"https://openalex.org/C163258240","wikidata":"https://www.wikidata.org/wiki/Q25342","display_name":"Power (physics)","level":2,"score":0.06670662760734558},{"id":"https://openalex.org/C121332964","wikidata":"https://www.wikidata.org/wiki/Q413","display_name":"Physics","level":0,"score":0.06599867343902588},{"id":"https://openalex.org/C165801399","wikidata":"https://www.wikidata.org/wiki/Q25428","display_name":"Voltage","level":2,"score":0.05709680914878845},{"id":"https://openalex.org/C139719470","wikidata":"https://www.wikidata.org/wiki/Q39680","display_name":"Macroeconomics","level":1,"score":0.0},{"id":"https://openalex.org/C172385210","wikidata":"https://www.wikidata.org/wiki/Q5339","display_name":"Transistor","level":3,"score":0.0},{"id":"https://openalex.org/C162324750","wikidata":"https://www.wikidata.org/wiki/Q8134","display_name":"Economics","level":0,"score":0.0},{"id":"https://openalex.org/C62520636","wikidata":"https://www.wikidata.org/wiki/Q944","display_name":"Quantum mechanics","level":1,"score":0.0},{"id":"https://openalex.org/C153294291","wikidata":"https://www.wikidata.org/wiki/Q25261","display_name":"Meteorology","level":1,"score":0.0},{"id":"https://openalex.org/C178790620","wikidata":"https://www.wikidata.org/wiki/Q11351","display_name":"Organic chemistry","level":1,"score":0.0},{"id":"https://openalex.org/C43617362","wikidata":"https://www.wikidata.org/wiki/Q170050","display_name":"Chromatography","level":1,"score":0.0}],"mesh":[],"locations_count":1,"locations":[{"id":"doi:10.1109/iedm.1998.746432","doi":"https://doi.org/10.1109/iedm.1998.746432","is_oa":false,"landing_page_url":"https://doi.org/10.1109/iedm.1998.746432","pdf_url":null,"source":{"id":"https://openalex.org/S4210168112","display_name":"Technical digest - International Electron Devices Meeting/Technical digest","issn_l":"0163-1918","issn":["0163-1918","2156-017X"],"is_oa":false,"is_in_doaj":false,"is_core":false,"listed_in":[],"host_organization":"https://openalex.org/P4310319808","host_organization_name":"Institute of Electrical and Electronics Engineers","host_organization_lineage":["https://openalex.org/P4310319808"],"host_organization_lineage_names":["Institute of Electrical and Electronics Engineers"],"type":"conference"},"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"International Electron Devices Meeting 1998. Technical Digest (Cat. No.98CH36217)","raw_type":"proceedings-article"}],"best_oa_location":null,"sustainable_development_goals":[],"study_designs":[],"awards":[],"funders":[],"has_content":{"pdf":false,"grobid_xml":false},"content_urls":null,"referenced_works_count":4,"referenced_works":["https://openalex.org/W1506823599","https://openalex.org/W1531287602","https://openalex.org/W2018357689","https://openalex.org/W2542388118"],"related_works":["https://openalex.org/W2322185278","https://openalex.org/W2543336405","https://openalex.org/W2542388118","https://openalex.org/W2129753640","https://openalex.org/W2015340340","https://openalex.org/W2461107936","https://openalex.org/W2471794109","https://openalex.org/W2543553148","https://openalex.org/W745708263","https://openalex.org/W2117752277"],"abstract_inverted_index":{"In":[0],"this":[1],"paper,":[2],"ultra":[3],"thin":[4],"CVD":[5],"Ta/sub":[6],"2/O/sub":[7],"5/":[8],"gate":[9],"dielectrics":[10],"(Teq<15":[11],"/spl":[12],"Aring/)":[13],"with":[14],"significantly":[15],"lower":[16],"leakage":[17],"current":[18],"compared":[19],"to":[20],"SiO/sub":[21],"2/,":[22],"of":[23],"identical":[24],"thickness,":[25],"have":[26,38],"been":[27,39],"fabricated":[28],"by":[29],"in-situ":[30],"RTP":[31],"processing.":[32],"Superior":[33],"interface":[34],"properties":[35],"and":[36],"reliability":[37],"obtained.":[40]},"counts_by_year":[],"updated_date":"2026-10-06T10:28:23.643775","created_date":"2016-10-28T00:00:00"}