{"id":"https://openalex.org/W2525593036","doi":"https://doi.org/10.1063/1.4963881","title":"Photosensitivity of InZnO thin-film transistors using a solution process","display_name":"Photosensitivity of InZnO thin-film transistors using a solution process","publication_year":2016,"publication_date":"2016-09-26","ids":{"openalex":"https://openalex.org/W2525593036","doi":"https://doi.org/10.1063/1.4963881","mag":"2525593036"},"language":"en","primary_location":{"id":"doi:10.1063/1.4963881","doi":"https://doi.org/10.1063/1.4963881","is_oa":false,"landing_page_url":"https://doi.org/10.1063/1.4963881","pdf_url":null,"source":{"id":"https://openalex.org/S105243760","display_name":"Applied Physics Letters","issn_l":"0003-6951","issn":["0003-6951","1077-3118","1520-8842"],"is_oa":false,"is_in_doaj":false,"is_core":true,"listed_in":["anvur-scientific","cwts-core","dongbi-a","jufo-3","ki-jl-1","norway-2","poland-100","russia-white-list-1","vabb-shw"],"host_organization":"https://openalex.org/P4310320257","host_organization_name":"American Institute of Physics","host_organization_lineage":["https://openalex.org/P4310320257"],"host_organization_lineage_names":["American Institute of Physics"],"type":"journal"},"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"Applied Physics Letters","raw_type":"journal-article"},"volume":null,"type":"article","is_traditional":true,"indexed_in":["crossref"],"open_access":{"is_oa":false,"oa_status":"closed","oa_url":null,"any_repository_has_fulltext":false},"authorships":[{"author_position":"first","author":{"id":"https://openalex.org/A5100958769","display_name":"Jong-Won Choi","orcid":null,"observed_orcids":[]},"institutions":[{"id":"https://openalex.org/I139264467","display_name":"Seoul National University","ror":"https://ror.org/04h9pn542","country_code":"KR","type":"education","lineage":["https://openalex.org/I139264467"]}],"countries":["KR"],"is_corresponding":false,"raw_author_name":"Jongwon Choi","raw_affiliation_strings":["Seoul National University 1 Program in Nano Science and Technology, Graduate School of Convergence Science and Technology, , Seoul 151-742, South Korea"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Seoul National University 1 Program in Nano Science and Technology, Graduate School of Convergence Science and Technology, , Seoul 151-742, South Korea","institution_ids":["https://openalex.org/I139264467"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5056526741","display_name":"Junghak Park","orcid":null,"observed_orcids":[]},"institutions":[{"id":"https://openalex.org/I197347611","display_name":"Korea University","ror":"https://ror.org/047dqcg40","country_code":"KR","type":"education","lineage":["https://openalex.org/I197347611"]}],"countries":["KR"],"is_corresponding":false,"raw_author_name":"Junghak Park","raw_affiliation_strings":["Korea University 2 Department of Applied Physics, , Sejongro 2511, Sejong 339-700, South Korea"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Korea University 2 Department of Applied Physics, , Sejongro 2511, Sejong 339-700, South Korea","institution_ids":["https://openalex.org/I197347611"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5110447400","display_name":"Keon\u2010Hee Lim","orcid":null,"observed_orcids":[]},"institutions":[{"id":"https://openalex.org/I139264467","display_name":"Seoul National University","ror":"https://ror.org/04h9pn542","country_code":"KR","type":"education","lineage":["https://openalex.org/I139264467"]}],"countries":["KR"],"is_corresponding":false,"raw_author_name":"Keon-Hee Lim","raw_affiliation_strings":["Seoul National University 1 Program in Nano Science and Technology, Graduate School of Convergence Science and Technology, , Seoul 151-742, South Korea"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Seoul National University 1 Program in Nano Science and Technology, Graduate School of Convergence Science and Technology, , Seoul 151-742, South Korea","institution_ids":["https://openalex.org/I139264467"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5086889049","display_name":"Nam-Kwang Cho","orcid":"https://orcid.org/0000-0002-9712-192X","observed_orcids":["https://orcid.org/0000-0002-9712-192X"]},"institutions":[{"id":"https://openalex.org/I139264467","display_name":"Seoul National University","ror":"https://ror.org/04h9pn542","country_code":"KR","type":"education","lineage":["https://openalex.org/I139264467"]}],"countries":["KR"],"is_corresponding":false,"raw_author_name":"Nam-kwang Cho","raw_affiliation_strings":["Seoul National University 1 Program in Nano Science and Technology, Graduate School of Convergence Science and Technology, , Seoul 151-742, South Korea"],"raw_orcid":"https://orcid.org/0000-0002-9712-192X","affiliations":[{"raw_affiliation_string":"Seoul National University 1 Program in Nano Science and Technology, Graduate School of Convergence Science and Technology, , Seoul 151-742, South Korea","institution_ids":["https://openalex.org/I139264467"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5100750640","display_name":"Jin\u2010Won Lee","orcid":"https://orcid.org/0000-0001-8672-519X","observed_orcids":["https://orcid.org/0000-0001-8672-519X"]},"institutions":[{"id":"https://openalex.org/I139264467","display_name":"Seoul National University","ror":"https://ror.org/04h9pn542","country_code":"KR","type":"education","lineage":["https://openalex.org/I139264467"]}],"countries":["KR"],"is_corresponding":false,"raw_author_name":"Jinwon Lee","raw_affiliation_strings":["Seoul National University 1 Program in Nano Science and Technology, Graduate School of Convergence Science and Technology, , Seoul 151-742, South Korea"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Seoul National University 1 Program in Nano Science and Technology, Graduate School of Convergence Science and Technology, , Seoul 151-742, South Korea","institution_ids":["https://openalex.org/I139264467"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5029046108","display_name":"Sanghun Jeon","orcid":"https://orcid.org/0000-0002-4222-1587","observed_orcids":["https://orcid.org/0000-0002-4222-1587"]},"institutions":[{"id":"https://openalex.org/I197347611","display_name":"Korea University","ror":"https://ror.org/047dqcg40","country_code":"KR","type":"education","lineage":["https://openalex.org/I197347611"]}],"countries":["KR"],"is_corresponding":false,"raw_author_name":"Sanghun Jeon","raw_affiliation_strings":["Korea University 2 Department of Applied Physics, , Sejongro 2511, Sejong 339-700, South Korea"],"raw_orcid":"https://orcid.org/0000-0002-4222-1587","affiliations":[{"raw_affiliation_string":"Korea University 2 Department of Applied Physics, , Sejongro 2511, Sejong 339-700, South Korea","institution_ids":["https://openalex.org/I197347611"]}]},{"author_position":"last","author":{"id":"https://openalex.org/A5072235115","display_name":"Youn Sang Kim","orcid":"https://orcid.org/0000-0002-4580-2037","observed_orcids":["https://orcid.org/0000-0002-4580-2037"]},"institutions":[{"id":"https://openalex.org/I139264467","display_name":"Seoul National University","ror":"https://ror.org/04h9pn542","country_code":"KR","type":"education","lineage":["https://openalex.org/I139264467"]},{"id":"https://openalex.org/I4210120602","display_name":"Advanced Institute of Convergence Technology","ror":"https://ror.org/01w62yz22","country_code":"KR","type":"facility","lineage":["https://openalex.org/I139264467","https://openalex.org/I4210120602"]}],"countries":["KR"],"is_corresponding":false,"raw_author_name":"Youn Sang Kim","raw_affiliation_strings":["Advanced Institute of Convergence Technology 3 , Gyeonggi-do 443-270, South Korea","Seoul National University 1 Program in Nano Science and Technology, Graduate School of Convergence Science and Technology, , Seoul 151-742, South Korea"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Advanced Institute of Convergence Technology 3 , Gyeonggi-do 443-270, South Korea","institution_ids":["https://openalex.org/I4210120602"]},{"raw_affiliation_string":"Seoul National University 1 Program in Nano Science and Technology, Graduate School of Convergence Science and Technology, , Seoul 151-742, South Korea","institution_ids":["https://openalex.org/I139264467"]}]}],"institutions":[],"countries_distinct_count":1,"institutions_distinct_count":3,"corresponding_author_ids":[],"corresponding_institution_ids":[],"apc_list":null,"apc_paid":null,"fwci":2.2874,"has_fulltext":false,"cited_by_count":43,"citation_normalized_percentile":{"value":0.88424406,"is_in_top_1_percent":false,"is_in_top_10_percent":false},"cited_by_percentile_year":{"min":88,"max":98},"biblio":{"volume":"109","issue":"13","first_page":null,"last_page":null},"is_retracted":false,"is_paratext":false,"is_xpac":false,"primary_topic":{"id":"https://openalex.org/T10623","display_name":"Thin-Film Transistor Technologies","score":0.9984999895095825,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},"topics":[{"id":"https://openalex.org/T10623","display_name":"Thin-Film Transistor Technologies","score":0.9984999895095825,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T10090","display_name":"ZnO doping and properties","score":0.0005000000237487257,"subfield":{"id":"https://openalex.org/subfields/2505","display_name":"Materials Chemistry"},"field":{"id":"https://openalex.org/fields/25","display_name":"Materials Science"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T10045","display_name":"Organic Electronics and Photovoltaics","score":0.00019999999494757503,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}}],"keywords":[{"id":"https://openalex.org/keywords/indium-zinc-oxide","display_name":"indium zinc oxide","score":0.8759999871253967},{"id":"https://openalex.org/keywords/oxide-thin-film-transistors","display_name":"oxide thin-film transistors","score":0.9309999942779541},{"id":"https://openalex.org/keywords/photosensitivity","display_name":"photosensitivity","score":0.8299999833106995},{"id":"https://openalex.org/keywords/sol-gel-synthesis","display_name":"sol-gel synthesis","score":0.7799999713897705},{"id":"https://openalex.org/keywords/oxide-semiconductors","display_name":"oxide semiconductors","score":0.781000018119812},{"id":"https://openalex.org/keywords/photocurrent","display_name":"photocurrent","score":0.7459999918937683},{"id":"https://openalex.org/keywords/oxygen-vacancies","display_name":"oxygen vacancies","score":0.8220000267028809},{"id":"https://openalex.org/keywords/persistent-photoconductivity","display_name":"persistent photoconductivity","score":0.8119999766349792},{"id":"https://openalex.org/keywords/channel-thickness","display_name":"channel thickness","score":0.7680000066757202},{"id":"https://openalex.org/keywords/interactive-displays","display_name":"interactive displays","score":0.7250000238418579},{"id":"https://openalex.org/keywords/photodetectors","display_name":"photodetectors","score":0.6660000085830688}],"concepts":[{"id":"https://openalex.org/C186807665","wikidata":"https://www.wikidata.org/wiki/Q2014823","display_name":"Photosensitivity","level":2,"score":0.9295701384544373},{"id":"https://openalex.org/C87359718","wikidata":"https://www.wikidata.org/wiki/Q1271916","display_name":"Thin-film transistor","level":3,"score":0.8956459164619446},{"id":"https://openalex.org/C192562407","wikidata":"https://www.wikidata.org/wiki/Q228736","display_name":"Materials science","level":0,"score":0.7556616067886353},{"id":"https://openalex.org/C49040817","wikidata":"https://www.wikidata.org/wiki/Q193091","display_name":"Optoelectronics","level":1,"score":0.7428695559501648},{"id":"https://openalex.org/C172385210","wikidata":"https://www.wikidata.org/wiki/Q5339","display_name":"Transistor","level":3,"score":0.5962241888046265},{"id":"https://openalex.org/C201999631","wikidata":"https://www.wikidata.org/wiki/Q2601129","display_name":"Photoconductivity","level":2,"score":0.5748257637023926},{"id":"https://openalex.org/C2778357024","wikidata":"https://www.wikidata.org/wiki/Q15229906","display_name":"Solution process","level":2,"score":0.5344198346138},{"id":"https://openalex.org/C136525101","wikidata":"https://www.wikidata.org/wiki/Q5428139","display_name":"Fabrication","level":3,"score":0.5237897634506226},{"id":"https://openalex.org/C2779845233","wikidata":"https://www.wikidata.org/wiki/Q3381567","display_name":"Photocurrent","level":2,"score":0.49887537956237793},{"id":"https://openalex.org/C195370968","wikidata":"https://www.wikidata.org/wiki/Q1754002","display_name":"Threshold voltage","level":4,"score":0.4869428873062134},{"id":"https://openalex.org/C2779851234","wikidata":"https://www.wikidata.org/wiki/Q50690","display_name":"Oxide","level":2,"score":0.48377272486686707},{"id":"https://openalex.org/C108225325","wikidata":"https://www.wikidata.org/wiki/Q11456","display_name":"Semiconductor","level":2,"score":0.453235387802124},{"id":"https://openalex.org/C162743726","wikidata":"https://www.wikidata.org/wiki/Q7115642","display_name":"Oxide thin-film transistor","level":4,"score":0.4252907633781433},{"id":"https://openalex.org/C165801399","wikidata":"https://www.wikidata.org/wiki/Q25428","display_name":"Voltage","level":2,"score":0.3393908739089966},{"id":"https://openalex.org/C171250308","wikidata":"https://www.wikidata.org/wiki/Q11468","display_name":"Nanotechnology","level":1,"score":0.18523570895195007},{"id":"https://openalex.org/C119599485","wikidata":"https://www.wikidata.org/wiki/Q43035","display_name":"Electrical engineering","level":1,"score":0.13042739033699036},{"id":"https://openalex.org/C2779227376","wikidata":"https://www.wikidata.org/wiki/Q6505497","display_name":"Layer (electronics)","level":2,"score":0.08149904012680054},{"id":"https://openalex.org/C142724271","wikidata":"https://www.wikidata.org/wiki/Q7208","display_name":"Pathology","level":1,"score":0.0},{"id":"https://openalex.org/C71924100","wikidata":"https://www.wikidata.org/wiki/Q11190","display_name":"Medicine","level":0,"score":0.0},{"id":"https://openalex.org/C127413603","wikidata":"https://www.wikidata.org/wiki/Q11023","display_name":"Engineering","level":0,"score":0.0},{"id":"https://openalex.org/C191897082","wikidata":"https://www.wikidata.org/wiki/Q11467","display_name":"Metallurgy","level":1,"score":0.0},{"id":"https://openalex.org/C204787440","wikidata":"https://www.wikidata.org/wiki/Q188504","display_name":"Alternative medicine","level":2,"score":0.0}],"mesh":[],"locations_count":1,"locations":[{"id":"doi:10.1063/1.4963881","doi":"https://doi.org/10.1063/1.4963881","is_oa":false,"landing_page_url":"https://doi.org/10.1063/1.4963881","pdf_url":null,"source":{"id":"https://openalex.org/S105243760","display_name":"Applied Physics Letters","issn_l":"0003-6951","issn":["0003-6951","1077-3118","1520-8842"],"is_oa":false,"is_in_doaj":false,"is_core":true,"listed_in":["anvur-scientific","cwts-core","dongbi-a","jufo-3","ki-jl-1","norway-2","poland-100","russia-white-list-1","vabb-shw"],"host_organization":"https://openalex.org/P4310320257","host_organization_name":"American Institute of Physics","host_organization_lineage":["https://openalex.org/P4310320257"],"host_organization_lineage_names":["American Institute of Physics"],"type":"journal"},"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"Applied Physics Letters","raw_type":"journal-article"}],"best_oa_location":null,"sustainable_development_goals":[],"study_designs":[],"awards":[{"id":"https://openalex.org/G373821238","display_name":null,"funder_award_id":"2014R1A2A2A01006541","funder_id":"https://openalex.org/F4320322120","funder_display_name":"National Research Foundation of Korea"}],"funders":[{"id":"https://openalex.org/F4320322120","display_name":"National Research Foundation of Korea","ror":"https://ror.org/013aysd81"}],"has_content":{"grobid_xml":false,"pdf":false},"content_urls":null,"referenced_works_count":23,"referenced_works":["https://openalex.org/W1858480979","https://openalex.org/W1965142452","https://openalex.org/W1974692377","https://openalex.org/W1976013186","https://openalex.org/W1976088289","https://openalex.org/W1977957977","https://openalex.org/W1979254829","https://openalex.org/W1982739165","https://openalex.org/W1985936082","https://openalex.org/W1994277498","https://openalex.org/W1999589524","https://openalex.org/W2024991754","https://openalex.org/W2037842004","https://openalex.org/W2049817780","https://openalex.org/W2069321041","https://openalex.org/W2080762898","https://openalex.org/W2083415511","https://openalex.org/W2083557759","https://openalex.org/W2092426063","https://openalex.org/W2093334606","https://openalex.org/W2156933657","https://openalex.org/W2169865981","https://openalex.org/W2296900925"],"related_works":["https://openalex.org/W2172096683","https://openalex.org/W2079036073","https://openalex.org/W4390230435","https://openalex.org/W1970713352","https://openalex.org/W2947517278","https://openalex.org/W3045490454","https://openalex.org/W2068910815","https://openalex.org/W4402834604","https://openalex.org/W1979449187","https://openalex.org/W2517547609"],"abstract_inverted_index":{"Oxide":[0],"semiconductor":[1,19,32],"devices":[2],"play":[3],"a":[4,85,105,139,149],"role":[5],"in":[6,11,75,172],"both":[7],"switches":[8],"and":[9,39,97,112,148],"photo-sensors":[10],"interactive":[12,196],"displays.":[13,197],"During":[14],"the":[15,21,52,64,76,99,109,116,122,133,157,161,182,187],"fabrication":[16],"of":[17,55,108,125,144,152,160],"oxide":[18,31,57,136,162],"devices,":[20],"sol-gel":[22,67,188],"solution":[23],"process":[24,189],"that":[25,181],"is":[26,81,92],"used":[27],"to":[28,71,121,195],"form":[29],"an":[30,56],"has":[33],"various":[34],"merits,":[35],"including":[36],"its":[37,45],"simplicity":[38],"low":[40],"cost":[41],"as":[42,44],"well":[43],"good":[46,140,173],"composition":[47,114],"controllability.":[48],"Here,":[49],"we":[50],"present":[51],"photosensitivity":[53,91,142],"characteristics":[54],"photo":[58],"thin-film":[59],"transistor":[60],"(TFT)":[61],"created":[62],"using":[63],"InZnO":[65],"(IZO)":[66],"process.":[68],"Upon":[69],"exposure":[70],"light,":[72],"photocurrent":[73],"(Iphoto)":[74],"negative":[77],"gate":[78,169],"bias":[79],"regime":[80],"significantly":[82],"increased":[83],"with":[84],"negligible":[86],"threshold":[87],"voltage":[88],"shift.":[89],"The":[90],"modulated":[93],"by":[94,98,166,186],"geometrical":[95],"factors":[96],"IZO":[100,113,183],"material":[101],"composition.":[102],"We":[103],"observed":[104],"significant":[106],"effect":[107,124],"channel":[110],"thickness":[111],"on":[115],"photosensitivity,":[117],"which":[118],"was":[119,164],"attributed":[120],"screening":[123],"optically":[126],"ionized":[127],"oxygen":[128],"vacancies":[129],"(Vo++).":[130],"In":[131,155],"particular,":[132],"optimized":[134],"bi-layered":[135],"photo-TFT":[137,163,184],"presents":[138],"Iphoto/Idark":[141],"value":[143],"3":[145],"\u00d7":[146],"104":[147],"subthreshold":[150],"slope":[151],"0.96":[153],"V/decade.":[154],"addition,":[156],"persistent":[158],"photoconductivity":[159],"removed":[165],"applying":[167],"positive":[168],"voltage,":[170],"resulting":[171],"high-speed":[174],"operation.":[175],"These":[176],"results":[177],"taken":[178],"together":[179],"demonstrate":[180],"produced":[185],"can":[190],"be":[191],"workable":[192],"when":[193],"applied":[194]},"counts_by_year":[{"year":2026,"cited_by_count":4},{"year":2025,"cited_by_count":5},{"year":2024,"cited_by_count":5},{"year":2023,"cited_by_count":1},{"year":2022,"cited_by_count":5},{"year":2021,"cited_by_count":4},{"year":2020,"cited_by_count":3},{"year":2019,"cited_by_count":6},{"year":2018,"cited_by_count":6},{"year":2017,"cited_by_count":4}],"updated_date":"2026-11-04T10:54:05.112534","created_date":"2016-10-07T00:00:00"}