{"id":"https://openalex.org/W2524499232","doi":"https://doi.org/10.1109/irps.2016.7574559","title":"Latchup holding voltages and trigger currents in an SOI technology","display_name":"Latchup holding voltages and trigger currents in an SOI technology","publication_year":2016,"publication_date":"2016-04-01","ids":{"openalex":"https://openalex.org/W2524499232","doi":"https://doi.org/10.1109/irps.2016.7574559","mag":"2524499232"},"language":"en","primary_location":{"id":"doi:10.1109/irps.2016.7574559","doi":"https://doi.org/10.1109/irps.2016.7574559","is_oa":false,"landing_page_url":"https://doi.org/10.1109/irps.2016.7574559","pdf_url":null,"source":{"id":"https://openalex.org/S4210238090","display_name":"IEEE International Reliability Physics Symposium proceedings","issn_l":"0735-0791","issn":["0735-0791","1541-7026","1938-1891"],"is_oa":false,"is_in_doaj":false,"is_core":false,"listed_in":[],"host_organization":"https://openalex.org/P4310319808","host_organization_name":"Institute of Electrical and Electronics Engineers","host_organization_lineage":["https://openalex.org/P4310319808"],"host_organization_lineage_names":["Institute of Electrical and Electronics Engineers"],"type":"conference"},"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"2016 IEEE International Reliability Physics Symposium (IRPS)","raw_type":"proceedings-article"},"volume":null,"type":"conference-paper","is_traditional":true,"indexed_in":["crossref"],"open_access":{"is_oa":false,"oa_status":"closed","oa_url":null,"any_repository_has_fulltext":false},"authorships":[{"author_position":"first","author":{"id":"https://openalex.org/A5021633145","display_name":"Guido Quax","orcid":null,"observed_orcids":[]},"institutions":[],"countries":[],"is_corresponding":false,"raw_author_name":"Guido Quax","raw_affiliation_strings":["NXP Semiconductors, Nijmegen, The Netherlands"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"NXP Semiconductors, Nijmegen, The Netherlands","institution_ids":[]}]},{"author_position":"last","author":{"id":"https://openalex.org/A5061506486","display_name":"Theo Smedes","orcid":"https://orcid.org/0000-0002-4829-2431","observed_orcids":["https://orcid.org/0000-0002-4829-2431"]},"institutions":[],"countries":[],"is_corresponding":false,"raw_author_name":"Theo Smedes","raw_affiliation_strings":["NXP Semiconductors, Nijmegen, The Netherlands"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"NXP Semiconductors, Nijmegen, The Netherlands","institution_ids":[]}]}],"institutions":[],"countries_distinct_count":0,"institutions_distinct_count":0,"corresponding_author_ids":[],"corresponding_institution_ids":[],"apc_list":null,"apc_paid":null,"fwci":0.93,"has_fulltext":false,"cited_by_count":4,"citation_normalized_percentile":{"value":0.68690964,"is_in_top_1_percent":false,"is_in_top_10_percent":false},"cited_by_percentile_year":{"min":88,"max":93},"biblio":{"volume":null,"issue":null,"first_page":"6A","last_page":"5"},"is_retracted":false,"is_paratext":false,"is_xpac":false,"primary_topic":{"id":"https://openalex.org/T12495","display_name":"Electrostatic Discharge in Electronics","score":0.9907000064849854,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},"topics":[{"id":"https://openalex.org/T12495","display_name":"Electrostatic Discharge in Electronics","score":0.9907000064849854,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T10361","display_name":"Silicon Carbide Semiconductor Technologies","score":0.0027000000700354576,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T14117","display_name":"Integrated Circuits and Semiconductor Failure Analysis","score":0.0013000000035390258,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}}],"keywords":[{"id":"https://openalex.org/keywords/latch-up","display_name":"latch-up","score":0.9909999966621399},{"id":"https://openalex.org/keywords/holding-voltage","display_name":"holding voltage","score":0.8539999723434448},{"id":"https://openalex.org/keywords/trigger-current","display_name":"trigger current","score":0.984000027179718},{"id":"https://openalex.org/keywords/silicon-on-insulator","display_name":"silicon-on-insulator","score":0.9819999933242798},{"id":"https://openalex.org/keywords/thyristors","display_name":"thyristors","score":0.7680000066757202}],"concepts":[{"id":"https://openalex.org/C165801399","wikidata":"https://www.wikidata.org/wiki/Q25428","display_name":"Voltage","level":2,"score":0.6254751682281494},{"id":"https://openalex.org/C138230450","wikidata":"https://www.wikidata.org/wiki/Q2016597","display_name":"Ohmic contact","level":3,"score":0.6114125847816467},{"id":"https://openalex.org/C53143962","wikidata":"https://www.wikidata.org/wiki/Q1478788","display_name":"Silicon on insulator","level":3,"score":0.600088357925415},{"id":"https://openalex.org/C46918542","wikidata":"https://www.wikidata.org/wiki/Q1648344","display_name":"Common emitter","level":2,"score":0.5941272377967834},{"id":"https://openalex.org/C121922863","wikidata":"https://www.wikidata.org/wiki/Q180805","display_name":"Thyristor","level":3,"score":0.5642961263656616},{"id":"https://openalex.org/C119599485","wikidata":"https://www.wikidata.org/wiki/Q43035","display_name":"Electrical engineering","level":1,"score":0.5568192005157471},{"id":"https://openalex.org/C62611344","wikidata":"https://www.wikidata.org/wiki/Q1062658","display_name":"Node (physics)","level":2,"score":0.5126720666885376},{"id":"https://openalex.org/C31672976","wikidata":"https://www.wikidata.org/wiki/Q4042432","display_name":"LDMOS","level":4,"score":0.4469010829925537},{"id":"https://openalex.org/C205483674","wikidata":"https://www.wikidata.org/wiki/Q3574961","display_name":"Electrostatic discharge","level":3,"score":0.44022318720817566},{"id":"https://openalex.org/C148043351","wikidata":"https://www.wikidata.org/wiki/Q4456944","display_name":"Current (fluid)","level":2,"score":0.4257959723472595},{"id":"https://openalex.org/C192562407","wikidata":"https://www.wikidata.org/wiki/Q228736","display_name":"Materials science","level":0,"score":0.41694480180740356},{"id":"https://openalex.org/C24326235","wikidata":"https://www.wikidata.org/wiki/Q126095","display_name":"Electronic engineering","level":1,"score":0.4040524661540985},{"id":"https://openalex.org/C119321828","wikidata":"https://www.wikidata.org/wiki/Q1267190","display_name":"Breakdown voltage","level":3,"score":0.37805044651031494},{"id":"https://openalex.org/C41008148","wikidata":"https://www.wikidata.org/wiki/Q21198","display_name":"Computer science","level":0,"score":0.3742404580116272},{"id":"https://openalex.org/C544956773","wikidata":"https://www.wikidata.org/wiki/Q670","display_name":"Silicon","level":2,"score":0.36299943923950195},{"id":"https://openalex.org/C127413603","wikidata":"https://www.wikidata.org/wiki/Q11023","display_name":"Engineering","level":0,"score":0.3422820568084717},{"id":"https://openalex.org/C49040817","wikidata":"https://www.wikidata.org/wiki/Q193091","display_name":"Optoelectronics","level":1,"score":0.31176522374153137},{"id":"https://openalex.org/C171250308","wikidata":"https://www.wikidata.org/wiki/Q11468","display_name":"Nanotechnology","level":1,"score":0.09084281325340271},{"id":"https://openalex.org/C66938386","wikidata":"https://www.wikidata.org/wiki/Q633538","display_name":"Structural engineering","level":1,"score":0.0},{"id":"https://openalex.org/C2779227376","wikidata":"https://www.wikidata.org/wiki/Q6505497","display_name":"Layer (electronics)","level":2,"score":0.0}],"mesh":[],"locations_count":1,"locations":[{"id":"doi:10.1109/irps.2016.7574559","doi":"https://doi.org/10.1109/irps.2016.7574559","is_oa":false,"landing_page_url":"https://doi.org/10.1109/irps.2016.7574559","pdf_url":null,"source":{"id":"https://openalex.org/S4210238090","display_name":"IEEE International Reliability Physics Symposium proceedings","issn_l":"0735-0791","issn":["0735-0791","1541-7026","1938-1891"],"is_oa":false,"is_in_doaj":false,"is_core":false,"listed_in":[],"host_organization":"https://openalex.org/P4310319808","host_organization_name":"Institute of Electrical and Electronics Engineers","host_organization_lineage":["https://openalex.org/P4310319808"],"host_organization_lineage_names":["Institute of Electrical and Electronics Engineers"],"type":"conference"},"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"2016 IEEE International Reliability Physics Symposium (IRPS)","raw_type":"proceedings-article"}],"best_oa_location":null,"sustainable_development_goals":[],"study_designs":[],"awards":[],"funders":[],"has_content":{"pdf":false,"grobid_xml":false},"content_urls":null,"referenced_works_count":21,"referenced_works":["https://openalex.org/W1483168736","https://openalex.org/W1964153648","https://openalex.org/W1973257824","https://openalex.org/W1983324571","https://openalex.org/W1991430328","https://openalex.org/W2021769911","https://openalex.org/W2034957337","https://openalex.org/W2055652473","https://openalex.org/W2078333430","https://openalex.org/W2083932987","https://openalex.org/W2084236827","https://openalex.org/W2096720663","https://openalex.org/W2103493752","https://openalex.org/W2118270073","https://openalex.org/W2125511902","https://openalex.org/W2128494675","https://openalex.org/W2134065086","https://openalex.org/W2143655922","https://openalex.org/W2162701336","https://openalex.org/W2170438066","https://openalex.org/W6628787717"],"related_works":["https://openalex.org/W2128259329","https://openalex.org/W1545419809","https://openalex.org/W1981815858","https://openalex.org/W2938821639","https://openalex.org/W2025393660","https://openalex.org/W4246362165","https://openalex.org/W1520680883","https://openalex.org/W1996019991","https://openalex.org/W2083932987","https://openalex.org/W1982387473"],"abstract_inverted_index":{"This":[0],"paper":[1],"investigates":[2],"holding":[3,65],"voltages":[4,66],"and":[5,53,72,120],"trigger":[6],"currents":[7,81],"in":[8,17],"a":[9,22,46,54,70,83,86],"Silicon-on-Insulator":[10],"technology.":[11],"These":[12],"parameters":[13],"can":[14],"be":[15],"used":[16],"automated":[18],"layout":[19,84],"checks.":[20],"Via":[21],"new":[23],"measurement":[24],"method,":[25],"where":[26],"the":[27,30,38,41,44,50,58,76,96,102,111,118],"well-bias":[28],"of":[29,40,43,75,82,117],"test":[31],"structures":[32],"is":[33,62,99],"varied":[34],"with":[35,85],"regard":[36],"to":[37,69],"bias":[39],"emitters":[42],"thyristor,":[45],"strong":[47],"dependency":[48,56],"on":[49,57],"emitter":[51],"distance,":[52],"weak":[55],"well":[59,88],"tap":[60,89],"distance":[61],"observed.":[63],"The":[64,115],"are":[67,91,123],"compared":[68],"low-Ohmic":[71],"high-Ohmic":[73],"variant":[74],"same":[77],"technology":[78],"node.":[79],"Trigger":[80],"variable":[87],"length":[90],"investigated.":[92],"A":[93],"model":[94,119],"for":[95,105],"effective":[97],"resistance":[98,104],"developed,":[100],"incorporating":[101],"increased":[103],"longer":[106],"current":[107,112],"paths":[108],"by":[109],"segmenting":[110],"flow":[113],"area.":[114],"performance":[116],"possible":[121],"applications":[122],"discussed.":[124]},"counts_by_year":[{"year":2025,"cited_by_count":1},{"year":2022,"cited_by_count":1},{"year":2018,"cited_by_count":1},{"year":2016,"cited_by_count":1}],"updated_date":"2026-10-06T10:28:23.643775","created_date":"2016-10-07T00:00:00"}