{"id":"https://openalex.org/W2477661997","doi":"https://doi.org/10.1116/1.4959028","title":"Effects of proton irradiation and thermal annealing on off-state step-stressed AlGaN/GaN high electron mobility transistors","display_name":"Effects of proton irradiation and thermal annealing on off-state step-stressed AlGaN/GaN high electron mobility transistors","publication_year":2016,"publication_date":"2016-07-01","ids":{"openalex":"https://openalex.org/W2477661997","doi":"https://doi.org/10.1116/1.4959028","mag":"2477661997"},"language":"en","primary_location":{"id":"doi:10.1116/1.4959028","doi":"https://doi.org/10.1116/1.4959028","is_oa":false,"landing_page_url":"https://doi.org/10.1116/1.4959028","pdf_url":null,"source":{"id":"https://openalex.org/S4210235835","display_name":"Journal of Vacuum Science & Technology B Nanotechnology and Microelectronics Materials Processing Measurement and Phenomena","issn_l":"2166-2746","issn":["2166-2746","2166-2754"],"is_oa":false,"is_in_doaj":false,"is_core":true,"listed_in":["cwts-core","dongbi-c","jufo-1","norway-1","poland-70","russia-white-list-2"],"host_organization":null,"host_organization_name":null,"host_organization_lineage":[],"host_organization_lineage_names":[],"type":"journal"},"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"Journal of Vacuum Science & Technology B, Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phenomena","raw_type":"journal-article"},"volume":null,"type":"article","is_traditional":true,"indexed_in":["crossref"],"open_access":{"is_oa":false,"oa_status":"closed","oa_url":null,"any_repository_has_fulltext":false},"authorships":[{"author_position":"first","author":{"id":"https://openalex.org/A5110057343","display_name":"Byung-Jae Kim","orcid":null,"observed_orcids":[]},"institutions":[{"id":"https://openalex.org/I33213144","display_name":"University of Florida","ror":"https://ror.org/02y3ad647","country_code":"US","type":"education","lineage":["https://openalex.org/I33213144"]}],"countries":["US"],"is_corresponding":false,"raw_author_name":"Byung-Jae Kim","raw_affiliation_strings":["University of Florida Department of Chemical Engineering, , Gainesville, Florida 32611"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"University of Florida Department of Chemical Engineering, , Gainesville, Florida 32611","institution_ids":["https://openalex.org/I33213144"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5102278136","display_name":"Shihyun Ahn","orcid":null,"observed_orcids":[]},"institutions":[{"id":"https://openalex.org/I33213144","display_name":"University of Florida","ror":"https://ror.org/02y3ad647","country_code":"US","type":"education","lineage":["https://openalex.org/I33213144"]}],"countries":["US"],"is_corresponding":false,"raw_author_name":"Shihyun Ahn","raw_affiliation_strings":["University of Florida Department of Chemical Engineering, , Gainesville, Florida 32611"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"University of Florida Department of Chemical Engineering, , Gainesville, Florida 32611","institution_ids":["https://openalex.org/I33213144"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5100641969","display_name":"Fan Ren","orcid":"https://orcid.org/0000-0001-9234-019X","observed_orcids":["https://orcid.org/0000-0001-9234-019X"]},"institutions":[{"id":"https://openalex.org/I33213144","display_name":"University of Florida","ror":"https://ror.org/02y3ad647","country_code":"US","type":"education","lineage":["https://openalex.org/I33213144"]}],"countries":["US"],"is_corresponding":false,"raw_author_name":"Fan Ren","raw_affiliation_strings":["University of Florida Department of Chemical Engineering, , Gainesville, Florida 32611"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"University of Florida Department of Chemical Engineering, , Gainesville, Florida 32611","institution_ids":["https://openalex.org/I33213144"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5085381025","display_name":"S. J. Pearton","orcid":"https://orcid.org/0000-0001-6498-1256","observed_orcids":["https://orcid.org/0000-0001-6498-1256"]},"institutions":[{"id":"https://openalex.org/I33213144","display_name":"University of Florida","ror":"https://ror.org/02y3ad647","country_code":"US","type":"education","lineage":["https://openalex.org/I33213144"]}],"countries":["US"],"is_corresponding":false,"raw_author_name":"Stephen J. Pearton","raw_affiliation_strings":["University of Florida Department of Materials Science and Engineering, , Gainesville, Florida 32611"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"University of Florida Department of Materials Science and Engineering, , Gainesville, Florida 32611","institution_ids":["https://openalex.org/I33213144"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5050586684","display_name":"Gwangseok Yang","orcid":null,"observed_orcids":[]},"institutions":[{"id":"https://openalex.org/I197347611","display_name":"Korea University","ror":"https://ror.org/047dqcg40","country_code":"KR","type":"education","lineage":["https://openalex.org/I197347611"]}],"countries":["KR"],"is_corresponding":false,"raw_author_name":"Gwangseok Yang","raw_affiliation_strings":["Korea University Department of Chemical and Biological Engineering, , Seoul 136-713, South Korea"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Korea University Department of Chemical and Biological Engineering, , Seoul 136-713, South Korea","institution_ids":["https://openalex.org/I197347611"]}]},{"author_position":"last","author":{"id":"https://openalex.org/A5100462779","display_name":"Jihyun Kim","orcid":"https://orcid.org/0000-0002-5634-8394","observed_orcids":["https://orcid.org/0000-0002-5634-8394","https://orcid.org/0000-0002-5119-6627"]},"institutions":[{"id":"https://openalex.org/I197347611","display_name":"Korea University","ror":"https://ror.org/047dqcg40","country_code":"KR","type":"education","lineage":["https://openalex.org/I197347611"]}],"countries":["KR"],"is_corresponding":false,"raw_author_name":"Jihyun Kim","raw_affiliation_strings":["Korea University Department of Chemical and Biological Engineering, , Seoul 136-713, South Korea"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Korea University Department of Chemical and Biological Engineering, , Seoul 136-713, South Korea","institution_ids":["https://openalex.org/I197347611"]}]}],"institutions":[],"countries_distinct_count":2,"institutions_distinct_count":2,"corresponding_author_ids":[],"corresponding_institution_ids":[],"apc_list":null,"apc_paid":null,"fwci":0.4006,"has_fulltext":false,"cited_by_count":16,"citation_normalized_percentile":{"value":0.56360679,"is_in_top_1_percent":false,"is_in_top_10_percent":false},"cited_by_percentile_year":{"min":88,"max":97},"biblio":{"volume":"34","issue":"4","first_page":null,"last_page":null},"is_retracted":false,"is_paratext":false,"is_xpac":false,"primary_topic":{"id":"https://openalex.org/T10099","display_name":"GaN-based semiconductor devices and materials","score":0.9326000213623047,"subfield":{"id":"https://openalex.org/subfields/3104","display_name":"Condensed Matter Physics"},"field":{"id":"https://openalex.org/fields/31","display_name":"Physics and Astronomy"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},"topics":[{"id":"https://openalex.org/T10099","display_name":"GaN-based semiconductor devices and materials","score":0.9326000213623047,"subfield":{"id":"https://openalex.org/subfields/3104","display_name":"Condensed Matter Physics"},"field":{"id":"https://openalex.org/fields/31","display_name":"Physics and Astronomy"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T11005","display_name":"Radiation Effects in Electronics","score":0.053700000047683716,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T10361","display_name":"Silicon Carbide Semiconductor Technologies","score":0.006899999920278788,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}}],"keywords":[{"id":"https://openalex.org/keywords/algan-gan-high-electron-mobility-transistors","display_name":"AlGaN/GaN HEMT","score":0.8450000286102295},{"id":"https://openalex.org/keywords/proton-irradiation","display_name":"proton irradiation","score":0.9800000190734863},{"id":"https://openalex.org/keywords/annealing","display_name":"annealing","score":0.9750000238418579},{"id":"https://openalex.org/keywords/displacement-damage","display_name":"displacement damage","score":0.7409999966621399},{"id":"https://openalex.org/keywords/two-dimensional-electron-gas","display_name":"two-dimensional electron gas","score":0.8659999966621399},{"id":"https://openalex.org/keywords/interface-trap-density","display_name":"interface trap density","score":0.9470000267028809},{"id":"https://openalex.org/keywords/gate-leakage-current","display_name":"gate leakage current","score":0.8029999732971191},{"id":"https://openalex.org/keywords/transconductance-degradation","display_name":"transconductance degradation","score":0.8600000143051147},{"id":"https://openalex.org/keywords/radiation-damage","display_name":"radiation damage","score":0.5519999861717224},{"id":"https://openalex.org/keywords/device-reliability","display_name":"device reliability","score":0.4659999907016754}],"concepts":[{"id":"https://openalex.org/C192562407","wikidata":"https://www.wikidata.org/wiki/Q228736","display_name":"Materials science","level":0,"score":0.8658995032310486},{"id":"https://openalex.org/C2779283907","wikidata":"https://www.wikidata.org/wiki/Q1632964","display_name":"Transconductance","level":4,"score":0.8511816263198853},{"id":"https://openalex.org/C111337013","wikidata":"https://www.wikidata.org/wiki/Q2737837","display_name":"Irradiation","level":2,"score":0.7814508080482483},{"id":"https://openalex.org/C2777855556","wikidata":"https://www.wikidata.org/wiki/Q4339544","display_name":"Annealing (glass)","level":2,"score":0.7166074514389038},{"id":"https://openalex.org/C49040817","wikidata":"https://www.wikidata.org/wiki/Q193091","display_name":"Optoelectronics","level":1,"score":0.5817477703094482},{"id":"https://openalex.org/C172385210","wikidata":"https://www.wikidata.org/wiki/Q5339","display_name":"Transistor","level":3,"score":0.5266382694244385},{"id":"https://openalex.org/C155891486","wikidata":"https://www.wikidata.org/wiki/Q3694418","display_name":"Saturation current","level":3,"score":0.508228063583374},{"id":"https://openalex.org/C189278905","wikidata":"https://www.wikidata.org/wiki/Q2157708","display_name":"Wide-bandgap semiconductor","level":2,"score":0.4221903085708618},{"id":"https://openalex.org/C54516573","wikidata":"https://www.wikidata.org/wiki/Q2294","display_name":"Proton","level":2,"score":0.4216011166572571},{"id":"https://openalex.org/C113196181","wikidata":"https://www.wikidata.org/wiki/Q485223","display_name":"Analytical Chemistry (journal)","level":2,"score":0.32906970381736755},{"id":"https://openalex.org/C119599485","wikidata":"https://www.wikidata.org/wiki/Q43035","display_name":"Electrical engineering","level":1,"score":0.1647900938987732},{"id":"https://openalex.org/C159985019","wikidata":"https://www.wikidata.org/wiki/Q181790","display_name":"Composite material","level":1,"score":0.12464693188667297},{"id":"https://openalex.org/C165801399","wikidata":"https://www.wikidata.org/wiki/Q25428","display_name":"Voltage","level":2,"score":0.10232150554656982},{"id":"https://openalex.org/C185592680","wikidata":"https://www.wikidata.org/wiki/Q2329","display_name":"Chemistry","level":0,"score":0.10047674179077148},{"id":"https://openalex.org/C62520636","wikidata":"https://www.wikidata.org/wiki/Q944","display_name":"Quantum mechanics","level":1,"score":0.0},{"id":"https://openalex.org/C121332964","wikidata":"https://www.wikidata.org/wiki/Q413","display_name":"Physics","level":0,"score":0.0},{"id":"https://openalex.org/C43617362","wikidata":"https://www.wikidata.org/wiki/Q170050","display_name":"Chromatography","level":1,"score":0.0},{"id":"https://openalex.org/C127413603","wikidata":"https://www.wikidata.org/wiki/Q11023","display_name":"Engineering","level":0,"score":0.0},{"id":"https://openalex.org/C185544564","wikidata":"https://www.wikidata.org/wiki/Q81197","display_name":"Nuclear physics","level":1,"score":0.0}],"mesh":[],"locations_count":1,"locations":[{"id":"doi:10.1116/1.4959028","doi":"https://doi.org/10.1116/1.4959028","is_oa":false,"landing_page_url":"https://doi.org/10.1116/1.4959028","pdf_url":null,"source":{"id":"https://openalex.org/S4210235835","display_name":"Journal of Vacuum Science & Technology B Nanotechnology and Microelectronics Materials Processing Measurement and Phenomena","issn_l":"2166-2746","issn":["2166-2746","2166-2754"],"is_oa":false,"is_in_doaj":false,"is_core":true,"listed_in":["cwts-core","dongbi-c","jufo-1","norway-1","poland-70","russia-white-list-2"],"host_organization":null,"host_organization_name":null,"host_organization_lineage":[],"host_organization_lineage_names":[],"type":"journal"},"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"Journal of Vacuum Science & Technology B, Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phenomena","raw_type":"journal-article"}],"best_oa_location":null,"sustainable_development_goals":[],"study_designs":[],"awards":[{"id":"https://openalex.org/G5756752099","display_name":null,"funder_award_id":"1-11-1-0020","funder_id":"https://openalex.org/F4320332186","funder_display_name":"Defense Threat Reduction Agency"}],"funders":[{"id":"https://openalex.org/F4320306078","display_name":"U.S. Department of Defense","ror":"https://ror.org/0447fe631"},{"id":"https://openalex.org/F4320332186","display_name":"Defense Threat Reduction Agency","ror":"https://ror.org/04tz64554"}],"has_content":{"pdf":false,"grobid_xml":false},"content_urls":null,"referenced_works_count":29,"referenced_works":["https://openalex.org/W1963946809","https://openalex.org/W1965745149","https://openalex.org/W1967264012","https://openalex.org/W1968007587","https://openalex.org/W1968646817","https://openalex.org/W1974463941","https://openalex.org/W1982316413","https://openalex.org/W1998267143","https://openalex.org/W1998437016","https://openalex.org/W1999934302","https://openalex.org/W2002158043","https://openalex.org/W2003300972","https://openalex.org/W2003961359","https://openalex.org/W2016869862","https://openalex.org/W2017635765","https://openalex.org/W2034112055","https://openalex.org/W2035213182","https://openalex.org/W2067407700","https://openalex.org/W2080549754","https://openalex.org/W2090309994","https://openalex.org/W2155143395","https://openalex.org/W2156255342","https://openalex.org/W2158476189","https://openalex.org/W2166850656","https://openalex.org/W2197042504","https://openalex.org/W2259768559","https://openalex.org/W2323050638","https://openalex.org/W2333874606","https://openalex.org/W2345188292"],"related_works":["https://openalex.org/W1987571518","https://openalex.org/W2059125539","https://openalex.org/W2089339127","https://openalex.org/W2002158043","https://openalex.org/W3038357049","https://openalex.org/W1965745149","https://openalex.org/W2025334554","https://openalex.org/W2904128453","https://openalex.org/W2142856174","https://openalex.org/W3112391635"],"abstract_inverted_index":{"The":[0,26,81,134,180,216],"effects":[1],"of":[2,9,36,53,57,78,103,113,137,150,185,214,220,229,279],"proton":[3,86,98,141,177,224,274],"irradiation":[4,87,99,142,178,225,278,301],"doses":[5,40,66],"on":[6],"dc":[7,60,135],"characteristics":[8,61,136],"reference,":[10],"electrically":[11,82],"stressed":[12,83,114,221,281,297],"under":[13],"off-state":[14,164,261,280],"conditions":[15],"and":[16,39,94,110,120,126,131,183,242,276],"stressed/annealed":[17,95,132,138],"AlGaN/GaN":[18],"high":[19],"electron":[20,75],"mobility":[21],"transistors":[22],"(HEMTs)":[23],"were":[24,28,116,188,243],"investigated.":[25],"HEMTs":[27,84,115,139,174,187,222,309],"irradiated":[29,313],"with":[30,92,148,257,270,314],"protons":[31],"at":[32,100,195,226],"a":[33,101,227,267],"fixed":[34],"energy":[35],"5":[37],"MeV":[38],"ranging":[41],"from":[42,233],"1013":[43],"to":[44,68,124,237,245,284,300],"1015":[45,104,230],"cm\u22122.":[46],"As":[47],"expected,":[48],"in":[49,73,158,288],"all":[50],"three":[51],"types":[52],"HEMTs,":[54,152],"more":[55,89,210,285],"degradation":[56,90,145],"the":[58,69,79,106,163,169,176,258,296,305],"device":[59],"was":[62,208],"observed":[63],"for":[64,129,198],"higher":[65],"due":[67],"larger":[70],"displacement":[71],"damage":[72],"two-dimensional":[74],"gas":[76],"channel":[77],"HEMTs.":[80,96],"after":[85,140,175,191,206,223],"showed":[88,143],"compared":[91,123,147],"reference":[93,130,151],"After":[97],"dose":[102,228],"cm\u22122,":[105],"drain":[107,181],"saturation":[108],"current":[109,182,205],"maximum":[111],"transconductance":[112,184],"decreased":[117,209],"by":[118,162,273],"28.5%":[119],"15%,":[121],"respectively,":[122,128],"24%":[125],"11.5%\u201312%,":[127],"devices.":[133],"similar":[144],"trends":[146],"those":[149,271],"confirming":[153],"that":[154,260,265,291],"annealing":[155,194,207],"is":[156],"effective":[157],"removing":[159],"defects":[160,264,286],"created":[161,272],"stressing.":[165],"In":[166],"some":[167],"cases,":[168],"authors":[170],"also":[171],"annealed":[172],"stressed/irradiated":[173,186],"step.":[179],"slightly":[189],"increased":[190,232],"subsequent":[192],"thermal":[193,251],"450":[196],"\u00b0C":[197],"10":[199],"min,":[200],"while":[201],"reverse":[202],"gate":[203],"leakage":[204],"than":[211,287],"an":[212],"order":[213],"magnitude.":[215],"interface":[217],"trap":[218],"density":[219],"cm\u22122":[231],"3.05":[234],"\u00d7":[235,239,247],"1012":[236],"1.37":[238],"1013/cm2":[240],"V":[241,249],"reduced":[244],"6.01":[246],"1012/cm2":[248],"following":[250],"annealing.":[252],"Our":[253],"results":[254],"are":[255,292,312],"consistent":[256],"notion":[259],"stressing":[262],"creates":[263],"have":[266],"common":[268],"origin":[269],"irradiation,":[275],"thus,":[277],"devices":[282,290,298],"leads":[283],"unstressed":[289,308],"subsequently":[293],"irradiated.":[294],"Annealing":[295],"prior":[299],"makes":[302],"them":[303],"behave":[304],"same":[306],"as":[307],"when":[310],"both":[311],"protons.":[315]},"counts_by_year":[{"year":2025,"cited_by_count":3},{"year":2024,"cited_by_count":2},{"year":2023,"cited_by_count":1},{"year":2022,"cited_by_count":3},{"year":2021,"cited_by_count":4},{"year":2019,"cited_by_count":1},{"year":2018,"cited_by_count":2}],"updated_date":"2026-09-29T14:09:16.559479","created_date":"2016-08-23T00:00:00"}