{"id":"https://openalex.org/W2467572017","doi":"https://doi.org/10.7567/ssdm.2002.b-3-3","title":"Improvement of electrical properties for high-\u03ba dielectrics grown by MOCVD via cyclic remote plasma oxidation","display_name":"Improvement of electrical properties for high-\u03ba dielectrics grown by MOCVD via cyclic remote plasma oxidation","publication_year":2002,"publication_date":"2002-09-18","ids":{"openalex":"https://openalex.org/W2467572017","doi":"https://doi.org/10.7567/ssdm.2002.b-3-3","mag":"2467572017"},"language":"en","primary_location":{"id":"doi:10.7567/ssdm.2002.b-3-3","doi":"https://doi.org/10.7567/ssdm.2002.b-3-3","is_oa":false,"landing_page_url":"https://doi.org/10.7567/ssdm.2002.b-3-3","pdf_url":null,"source":{"id":"https://openalex.org/S4306510274","display_name":"International Conference on Solid State Devices and Materials (SSDM)","issn_l":null,"issn":null,"is_oa":false,"is_in_doaj":false,"is_core":false,"listed_in":[],"host_organization":null,"host_organization_name":null,"host_organization_lineage":[],"host_organization_lineage_names":[],"type":"conference"},"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"Extended Abstracts of the 2002 International Conference on Solid State Devices and Materials","raw_type":"proceedings-article"},"volume":null,"type":"conference-paper","indexed_in":["crossref"],"open_access":{"is_oa":false,"oa_status":"closed","oa_url":null,"any_repository_has_fulltext":false},"authorships":[{"author_position":"first","author":{"id":"https://openalex.org/A5111965050","display_name":"Sadayoshi Horii","orcid":null,"observed_orcids":[]},"institutions":[],"countries":[],"is_corresponding":false,"raw_author_name":"Sadayoshi Horii","raw_affiliation_strings":[],"raw_orcid":null,"affiliations":[]},{"author_position":"middle","author":{"id":"https://openalex.org/A5110253972","display_name":"M. Asai","orcid":null,"observed_orcids":[]},"institutions":[],"countries":[],"is_corresponding":false,"raw_author_name":"Masayuki Asai","raw_affiliation_strings":[],"raw_orcid":null,"affiliations":[]},{"author_position":"middle","author":{"id":"https://openalex.org/A5031054811","display_name":"Miya Hironobu","orcid":null,"observed_orcids":[]},"institutions":[],"countries":[],"is_corresponding":false,"raw_author_name":"Hironobu Miya Kazuhiko Yamamoto","raw_affiliation_strings":[],"raw_orcid":null,"affiliations":[]},{"author_position":"last","author":{"id":"https://openalex.org/A5052532747","display_name":"M. Niwa","orcid":"https://orcid.org/0000-0002-4859-7016","observed_orcids":["https://orcid.org/0000-0002-4859-7016"]},"institutions":[],"countries":[],"is_corresponding":false,"raw_author_name":"Masaaki Niwa","raw_affiliation_strings":[],"raw_orcid":null,"affiliations":[]}],"institutions":[],"countries_distinct_count":0,"institutions_distinct_count":0,"corresponding_author_ids":[],"corresponding_institution_ids":[],"apc_list":null,"apc_paid":null,"fwci":0.3556,"has_fulltext":false,"cited_by_count":2,"citation_normalized_percentile":{"value":0.59939822,"is_in_top_1_percent":false,"is_in_top_10_percent":false},"cited_by_percentile_year":null,"biblio":{"volume":null,"issue":null,"first_page":null,"last_page":null},"is_retracted":false,"is_paratext":false,"is_xpac":false,"primary_topic":{"id":"https://openalex.org/T10472","display_name":"Semiconductor materials and devices","score":0.9794999957084656,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},"topics":[{"id":"https://openalex.org/T10472","display_name":"Semiconductor materials and devices","score":0.9794999957084656,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T11661","display_name":"Copper Interconnects and Reliability","score":0.01679999940097332,"subfield":{"id":"https://openalex.org/subfields/2504","display_name":"Electronic, Optical and Magnetic Materials"},"field":{"id":"https://openalex.org/fields/25","display_name":"Materials Science"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T12808","display_name":"Ferroelectric and Negative Capacitance Devices","score":0.00039999998989515007,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}}],"keywords":[{"id":"https://openalex.org/keywords/high-k-dielectrics","display_name":"high-k dielectrics","score":0.9480000138282776},{"id":"https://openalex.org/keywords/metal-organic-chemical-vapor-deposition","display_name":"metalorganic chemical vapor deposition","score":0.8349999785423279},{"id":"https://openalex.org/keywords/electrical-properties","display_name":"electrical properties","score":0.6510000228881836},{"id":"https://openalex.org/keywords/dielectric-films","display_name":"dielectric films","score":0.503000020980835},{"id":"https://openalex.org/keywords/plasma-oxidation","display_name":"plasma oxidation","score":0.4050000011920929}],"concepts":[{"id":"https://openalex.org/C192562407","wikidata":"https://www.wikidata.org/wiki/Q228736","display_name":"Materials science","level":0,"score":0.8952906727790833},{"id":"https://openalex.org/C175665537","wikidata":"https://www.wikidata.org/wiki/Q1924991","display_name":"Metalorganic vapour phase epitaxy","level":4,"score":0.7719218730926514},{"id":"https://openalex.org/C133386390","wikidata":"https://www.wikidata.org/wiki/Q184996","display_name":"Dielectric","level":2,"score":0.7672512531280518},{"id":"https://openalex.org/C82706917","wikidata":"https://www.wikidata.org/wiki/Q10251","display_name":"Plasma","level":2,"score":0.677457332611084},{"id":"https://openalex.org/C49040817","wikidata":"https://www.wikidata.org/wiki/Q193091","display_name":"Optoelectronics","level":1,"score":0.6263964772224426},{"id":"https://openalex.org/C2780740191","wikidata":"https://www.wikidata.org/wiki/Q18393999","display_name":"Remote plasma","level":3,"score":0.4563463628292084},{"id":"https://openalex.org/C61696701","wikidata":"https://www.wikidata.org/wiki/Q770766","display_name":"Engineering physics","level":1,"score":0.33371293544769287},{"id":"https://openalex.org/C171250308","wikidata":"https://www.wikidata.org/wiki/Q11468","display_name":"Nanotechnology","level":1,"score":0.3041197657585144},{"id":"https://openalex.org/C57410435","wikidata":"https://www.wikidata.org/wiki/Q505668","display_name":"Chemical vapor deposition","level":2,"score":0.2513023614883423},{"id":"https://openalex.org/C110738630","wikidata":"https://www.wikidata.org/wiki/Q1135540","display_name":"Epitaxy","level":3,"score":0.05402219295501709},{"id":"https://openalex.org/C62520636","wikidata":"https://www.wikidata.org/wiki/Q944","display_name":"Quantum mechanics","level":1,"score":0.0},{"id":"https://openalex.org/C2779227376","wikidata":"https://www.wikidata.org/wiki/Q6505497","display_name":"Layer (electronics)","level":2,"score":0.0},{"id":"https://openalex.org/C121332964","wikidata":"https://www.wikidata.org/wiki/Q413","display_name":"Physics","level":0,"score":0.0},{"id":"https://openalex.org/C127413603","wikidata":"https://www.wikidata.org/wiki/Q11023","display_name":"Engineering","level":0,"score":0.0}],"mesh":[],"locations_count":1,"locations":[{"id":"doi:10.7567/ssdm.2002.b-3-3","doi":"https://doi.org/10.7567/ssdm.2002.b-3-3","is_oa":false,"landing_page_url":"https://doi.org/10.7567/ssdm.2002.b-3-3","pdf_url":null,"source":{"id":"https://openalex.org/S4306510274","display_name":"International Conference on Solid State Devices and Materials (SSDM)","issn_l":null,"issn":null,"is_oa":false,"is_in_doaj":false,"is_core":false,"listed_in":[],"host_organization":null,"host_organization_name":null,"host_organization_lineage":[],"host_organization_lineage_names":[],"type":"conference"},"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"Extended Abstracts of the 2002 International Conference on Solid State Devices and Materials","raw_type":"proceedings-article"}],"best_oa_location":null,"sustainable_development_goals":[],"study_designs":[],"awards":[],"funders":[],"has_content":{"grobid_xml":false,"pdf":false},"content_urls":null,"referenced_works_count":0,"referenced_works":[],"related_works":["https://openalex.org/W2039827954","https://openalex.org/W2524526102","https://openalex.org/W2264862777","https://openalex.org/W2603299761","https://openalex.org/W4297198649","https://openalex.org/W2472678498","https://openalex.org/W397738703","https://openalex.org/W2198929008","https://openalex.org/W6981437741","https://openalex.org/W2581586993"],"abstract_inverted_index":null,"counts_by_year":[],"updated_date":"2026-10-12T09:40:04.860316","created_date":"2016-07-22T00:00:00"}