{"id":"https://openalex.org/W2463061662","doi":"https://doi.org/10.7567/ssdm.2009.k-7-6","title":"The Performance of Magnetic Tunnel Junction Integrated on the Back-end Metal Line of CMOS Circuits","display_name":"The Performance of Magnetic Tunnel Junction Integrated on the Back-end Metal Line of CMOS Circuits","publication_year":2009,"publication_date":"2009-10-09","ids":{"openalex":"https://openalex.org/W2463061662","doi":"https://doi.org/10.7567/ssdm.2009.k-7-6","mag":"2463061662"},"language":"en","primary_location":{"id":"doi:10.7567/ssdm.2009.k-7-6","doi":"https://doi.org/10.7567/ssdm.2009.k-7-6","is_oa":false,"landing_page_url":"https://doi.org/10.7567/ssdm.2009.k-7-6","pdf_url":null,"source":{"id":"https://openalex.org/S4306510274","display_name":"International Conference on Solid State Devices and Materials (SSDM)","issn_l":null,"issn":null,"is_oa":false,"is_in_doaj":false,"is_core":false,"listed_in":[],"host_organization":null,"host_organization_name":null,"host_organization_lineage":[],"host_organization_lineage_names":[],"type":"conference"},"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"Extended Abstracts of the 2009 International Conference on Solid State Devices and Materials","raw_type":"proceedings-article"},"volume":null,"type":"conference-paper","indexed_in":["crossref"],"open_access":{"is_oa":false,"oa_status":"closed","oa_url":null,"any_repository_has_fulltext":false},"authorships":[{"author_position":"first","author":{"id":"https://openalex.org/A5083722186","display_name":"Tetsuo Endoh","orcid":"https://orcid.org/0000-0002-5583-3283","observed_orcids":["https://orcid.org/0000-0002-5583-3283"]},"institutions":[],"countries":[],"is_corresponding":false,"raw_author_name":"T. Endoh","raw_affiliation_strings":[],"raw_orcid":null,"affiliations":[]},{"author_position":"middle","author":{"id":"https://openalex.org/A5080408011","display_name":"Fumitaka IGA","orcid":null,"observed_orcids":[]},"institutions":[],"countries":[],"is_corresponding":false,"raw_author_name":"F. Iga","raw_affiliation_strings":[],"raw_orcid":null,"affiliations":[]},{"author_position":"middle","author":{"id":"https://openalex.org/A5012267283","display_name":"Shoji Ikeda","orcid":"https://orcid.org/0000-0002-3925-4089","observed_orcids":["https://orcid.org/0000-0002-3925-4089"]},"institutions":[],"countries":[],"is_corresponding":false,"raw_author_name":"S. Ikeda","raw_affiliation_strings":[],"raw_orcid":null,"affiliations":[]},{"author_position":"middle","author":{"id":null,"display_name":"K. Miura","orcid":null,"observed_orcids":[]},"institutions":[],"countries":[],"is_corresponding":false,"raw_author_name":"K. Miura","raw_affiliation_strings":[],"raw_orcid":null,"affiliations":[]},{"author_position":"middle","author":{"id":null,"display_name":"J. Hayakawa","orcid":null,"observed_orcids":[]},"institutions":[],"countries":[],"is_corresponding":false,"raw_author_name":"J. Hayakawa","raw_affiliation_strings":[],"raw_orcid":null,"affiliations":[]},{"author_position":"middle","author":{"id":"https://openalex.org/A5041948891","display_name":"Masashi Kamiyanagi","orcid":null,"observed_orcids":[]},"institutions":[],"countries":[],"is_corresponding":false,"raw_author_name":"M. Kamiyanagi","raw_affiliation_strings":[],"raw_orcid":null,"affiliations":[]},{"author_position":"middle","author":{"id":null,"display_name":"H. Hasegawa","orcid":null,"observed_orcids":[]},"institutions":[],"countries":[],"is_corresponding":false,"raw_author_name":"H. Hasegawa","raw_affiliation_strings":[],"raw_orcid":null,"affiliations":[]},{"author_position":"middle","author":{"id":"https://openalex.org/A5062434040","display_name":"Takahiro Hanyu","orcid":"https://orcid.org/0000-0002-4397-8290","observed_orcids":["https://orcid.org/0000-0002-4397-8290"]},"institutions":[],"countries":[],"is_corresponding":false,"raw_author_name":"T. Hanyu","raw_affiliation_strings":[],"raw_orcid":null,"affiliations":[]},{"author_position":"last","author":{"id":"https://openalex.org/A5081983682","display_name":"Hideo Ohno","orcid":"https://orcid.org/0000-0001-9688-8259","observed_orcids":["https://orcid.org/0000-0001-9688-8259"]},"institutions":[],"countries":[],"is_corresponding":false,"raw_author_name":"H. Ohno","raw_affiliation_strings":[],"raw_orcid":null,"affiliations":[]}],"institutions":[],"countries_distinct_count":0,"institutions_distinct_count":0,"corresponding_author_ids":[],"corresponding_institution_ids":[],"apc_list":null,"apc_paid":null,"fwci":0.0,"has_fulltext":false,"cited_by_count":0,"citation_normalized_percentile":{"value":0.49264096,"is_in_top_1_percent":false,"is_in_top_10_percent":false},"cited_by_percentile_year":null,"biblio":{"volume":null,"issue":null,"first_page":null,"last_page":null},"is_retracted":false,"is_paratext":false,"is_xpac":false,"primary_topic":{"id":"https://openalex.org/T10049","display_name":"Magnetic properties of thin films","score":0.9223999977111816,"subfield":{"id":"https://openalex.org/subfields/3107","display_name":"Atomic and Molecular Physics, and Optics"},"field":{"id":"https://openalex.org/fields/31","display_name":"Physics and Astronomy"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},"topics":[{"id":"https://openalex.org/T10049","display_name":"Magnetic properties of thin films","score":0.9223999977111816,"subfield":{"id":"https://openalex.org/subfields/3107","display_name":"Atomic and Molecular Physics, and Optics"},"field":{"id":"https://openalex.org/fields/31","display_name":"Physics and Astronomy"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T10558","display_name":"Advancements in Semiconductor Devices and Circuit Design","score":0.012400000356137753,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T11853","display_name":"Semiconductor materials and interfaces","score":0.007600000128149986,"subfield":{"id":"https://openalex.org/subfields/3107","display_name":"Atomic and Molecular Physics, and Optics"},"field":{"id":"https://openalex.org/fields/31","display_name":"Physics and Astronomy"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}}],"keywords":[{"id":"https://openalex.org/keywords/magnetic-tunnel-junctions","display_name":"magnetic tunnel junctions","score":0.906000018119812},{"id":"https://openalex.org/keywords/cmos-circuits","display_name":"CMOS circuits","score":0.9100000262260437},{"id":"https://openalex.org/keywords/spintronic-devices","display_name":"spintronic devices","score":0.6869999766349792},{"id":"https://openalex.org/keywords/device-performance","display_name":"device performance","score":0.49399998784065247}],"concepts":[{"id":"https://openalex.org/C192562407","wikidata":"https://www.wikidata.org/wiki/Q228736","display_name":"Materials science","level":0,"score":0.8520548939704895},{"id":"https://openalex.org/C46362747","wikidata":"https://www.wikidata.org/wiki/Q173431","display_name":"CMOS","level":2,"score":0.7377938628196716},{"id":"https://openalex.org/C2776628375","wikidata":"https://www.wikidata.org/wiki/Q4839229","display_name":"Back end of line","level":3,"score":0.658856213092804},{"id":"https://openalex.org/C134146338","wikidata":"https://www.wikidata.org/wiki/Q1815901","display_name":"Electronic circuit","level":2,"score":0.6578293442726135},{"id":"https://openalex.org/C49040817","wikidata":"https://www.wikidata.org/wiki/Q193091","display_name":"Optoelectronics","level":1,"score":0.5595356822013855},{"id":"https://openalex.org/C198352243","wikidata":"https://www.wikidata.org/wiki/Q37105","display_name":"Line (geometry)","level":2,"score":0.5487051606178284},{"id":"https://openalex.org/C56202322","wikidata":"https://www.wikidata.org/wiki/Q1884383","display_name":"Tunnel magnetoresistance","level":3,"score":0.5246363282203674},{"id":"https://openalex.org/C119599485","wikidata":"https://www.wikidata.org/wiki/Q43035","display_name":"Electrical engineering","level":1,"score":0.46554386615753174},{"id":"https://openalex.org/C544153396","wikidata":"https://www.wikidata.org/wiki/Q11426","display_name":"Metal","level":2,"score":0.42015135288238525},{"id":"https://openalex.org/C171250308","wikidata":"https://www.wikidata.org/wiki/Q11468","display_name":"Nanotechnology","level":1,"score":0.27333301305770874},{"id":"https://openalex.org/C127413603","wikidata":"https://www.wikidata.org/wiki/Q11023","display_name":"Engineering","level":0,"score":0.16437509655952454},{"id":"https://openalex.org/C191897082","wikidata":"https://www.wikidata.org/wiki/Q11467","display_name":"Metallurgy","level":1,"score":0.10164853930473328},{"id":"https://openalex.org/C2524010","wikidata":"https://www.wikidata.org/wiki/Q8087","display_name":"Geometry","level":1,"score":0.0},{"id":"https://openalex.org/C133386390","wikidata":"https://www.wikidata.org/wiki/Q184996","display_name":"Dielectric","level":2,"score":0.0},{"id":"https://openalex.org/C33923547","wikidata":"https://www.wikidata.org/wiki/Q395","display_name":"Mathematics","level":0,"score":0.0},{"id":"https://openalex.org/C2779227376","wikidata":"https://www.wikidata.org/wiki/Q6505497","display_name":"Layer (electronics)","level":2,"score":0.0}],"mesh":[],"locations_count":1,"locations":[{"id":"doi:10.7567/ssdm.2009.k-7-6","doi":"https://doi.org/10.7567/ssdm.2009.k-7-6","is_oa":false,"landing_page_url":"https://doi.org/10.7567/ssdm.2009.k-7-6","pdf_url":null,"source":{"id":"https://openalex.org/S4306510274","display_name":"International Conference on Solid State Devices and Materials (SSDM)","issn_l":null,"issn":null,"is_oa":false,"is_in_doaj":false,"is_core":false,"listed_in":[],"host_organization":null,"host_organization_name":null,"host_organization_lineage":[],"host_organization_lineage_names":[],"type":"conference"},"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"Extended Abstracts of the 2009 International Conference on Solid State Devices and Materials","raw_type":"proceedings-article"}],"best_oa_location":null,"sustainable_development_goals":[],"study_designs":[],"awards":[],"funders":[],"has_content":{"pdf":false,"grobid_xml":false},"content_urls":null,"referenced_works_count":0,"referenced_works":[],"related_works":["https://openalex.org/W2518612449","https://openalex.org/W2472075187","https://openalex.org/W1585379713","https://openalex.org/W2174341908","https://openalex.org/W2953369556","https://openalex.org/W573687820","https://openalex.org/W1989352007","https://openalex.org/W2581713055","https://openalex.org/W3146022231","https://openalex.org/W2462321548"],"abstract_inverted_index":null,"counts_by_year":[],"updated_date":"2026-10-05T09:50:58.205359","created_date":"2016-07-22T00:00:00"}