{"id":"https://openalex.org/W2380046073","doi":null,"title":"Establishment and simulation of Pspice static model for IGBT","display_name":"Establishment and simulation of Pspice static model for IGBT","publication_year":2010,"publication_date":"2010-01-01","ids":{"openalex":"https://openalex.org/W2380046073","mag":"2380046073"},"language":"en","primary_location":{"id":"mag:2380046073","doi":null,"is_oa":false,"landing_page_url":"https://en.cnki.com.cn/Article_en/CJFDTOTAL-BJWX201002018.htm","pdf_url":null,"source":{"id":"https://openalex.org/S2764968046","display_name":"Journal of Baoji University of Arts and Sciences","issn_l":null,"issn":null,"is_oa":false,"is_in_doaj":false,"is_core":false,"listed_in":[],"host_organization":"https://openalex.org/P4360969207","host_organization_name":"Baoji University of Arts and Sciences","host_organization_lineage":["https://openalex.org/P4360969207"],"host_organization_lineage_names":["Baoji University of Arts and Sciences"],"type":"journal"},"license":null,"license_id":null,"version":null,"is_accepted":false,"is_published":false,"raw_source_name":"Journal of Baoji University of Arts and Sciences","raw_type":null},"volume":null,"type":"article","is_traditional":true,"indexed_in":[],"open_access":{"is_oa":false,"oa_status":"closed","oa_url":null,"any_repository_has_fulltext":false},"authorships":[{"author_position":"first","author":{"id":"https://openalex.org/A5026768823","display_name":"Zhao Ya-hui","orcid":null,"observed_orcids":[]},"institutions":[],"countries":[],"is_corresponding":true,"raw_author_name":"Zhao Ya-hui","raw_affiliation_strings":["Dept"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Dept","institution_ids":[]}]}],"institutions":[],"countries_distinct_count":0,"institutions_distinct_count":0,"corresponding_author_ids":["https://openalex.org/A5026768823"],"corresponding_institution_ids":[],"apc_list":null,"apc_paid":null,"fwci":0.0,"has_fulltext":false,"cited_by_count":0,"citation_normalized_percentile":{"value":0.37454037,"is_in_top_1_percent":false,"is_in_top_10_percent":false},"cited_by_percentile_year":null,"biblio":{"volume":null,"issue":null,"first_page":null,"last_page":null},"is_retracted":false,"is_paratext":false,"is_xpac":false,"primary_topic":{"id":"https://openalex.org/T10361","display_name":"Silicon Carbide Semiconductor Technologies","score":0.9897000193595886,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},"topics":[{"id":"https://openalex.org/T10361","display_name":"Silicon Carbide Semiconductor Technologies","score":0.9897000193595886,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T13093","display_name":"Electric Power Systems and Control","score":0.004000000189989805,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T10228","display_name":"Multilevel Inverters and Converters","score":0.0010999999940395355,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}}],"keywords":[{"id":"https://openalex.org/keywords/igbt","display_name":"IGBT","score":0.9670000076293945},{"id":"https://openalex.org/keywords/pspice","display_name":"PSpice","score":0.7609999775886536},{"id":"https://openalex.org/keywords/power-semiconductor-devices","display_name":"power semiconductor devices","score":0.6909999847412109},{"id":"https://openalex.org/keywords/transfer-characteristics","display_name":"transfer characteristics","score":0.7850000262260437},{"id":"https://openalex.org/keywords/output-characteristics","display_name":"output characteristics","score":0.9950000047683716}],"concepts":[{"id":"https://openalex.org/C28285623","wikidata":"https://www.wikidata.org/wiki/Q176110","display_name":"Insulated-gate bipolar transistor","level":3,"score":0.9833050966262817},{"id":"https://openalex.org/C163258240","wikidata":"https://www.wikidata.org/wiki/Q25342","display_name":"Power (physics)","level":2,"score":0.5580699443817139},{"id":"https://openalex.org/C2780077345","wikidata":"https://www.wikidata.org/wiki/Q16891888","display_name":"Spice","level":2,"score":0.5557312369346619},{"id":"https://openalex.org/C129014197","wikidata":"https://www.wikidata.org/wiki/Q906544","display_name":"Power semiconductor device","level":3,"score":0.4814452528953552},{"id":"https://openalex.org/C41008148","wikidata":"https://www.wikidata.org/wiki/Q21198","display_name":"Computer science","level":0,"score":0.45669299364089966},{"id":"https://openalex.org/C172385210","wikidata":"https://www.wikidata.org/wiki/Q5339","display_name":"Transistor","level":3,"score":0.4428715705871582},{"id":"https://openalex.org/C91757755","wikidata":"https://www.wikidata.org/wiki/Q11121294","display_name":"Simulation software","level":3,"score":0.4378058910369873},{"id":"https://openalex.org/C25230419","wikidata":"https://www.wikidata.org/wiki/Q5195101","display_name":"Current injection technique","level":5,"score":0.425638347864151},{"id":"https://openalex.org/C24326235","wikidata":"https://www.wikidata.org/wiki/Q126095","display_name":"Electronic engineering","level":1,"score":0.4194828271865845},{"id":"https://openalex.org/C23061349","wikidata":"https://www.wikidata.org/wiki/Q188946","display_name":"Bipolar junction transistor","level":4,"score":0.39041000604629517},{"id":"https://openalex.org/C119599485","wikidata":"https://www.wikidata.org/wiki/Q43035","display_name":"Electrical engineering","level":1,"score":0.3860064446926117},{"id":"https://openalex.org/C2777904410","wikidata":"https://www.wikidata.org/wiki/Q7397","display_name":"Software","level":2,"score":0.3305038809776306},{"id":"https://openalex.org/C127413603","wikidata":"https://www.wikidata.org/wiki/Q11023","display_name":"Engineering","level":0,"score":0.3032286763191223},{"id":"https://openalex.org/C165801399","wikidata":"https://www.wikidata.org/wiki/Q25428","display_name":"Voltage","level":2,"score":0.21451333165168762},{"id":"https://openalex.org/C121332964","wikidata":"https://www.wikidata.org/wiki/Q413","display_name":"Physics","level":0,"score":0.06392931938171387},{"id":"https://openalex.org/C199360897","wikidata":"https://www.wikidata.org/wiki/Q9143","display_name":"Programming language","level":1,"score":0.0},{"id":"https://openalex.org/C62520636","wikidata":"https://www.wikidata.org/wiki/Q944","display_name":"Quantum mechanics","level":1,"score":0.0}],"mesh":[],"locations_count":1,"locations":[{"id":"mag:2380046073","doi":null,"is_oa":false,"landing_page_url":"https://en.cnki.com.cn/Article_en/CJFDTOTAL-BJWX201002018.htm","pdf_url":null,"source":{"id":"https://openalex.org/S2764968046","display_name":"Journal of Baoji University of Arts and Sciences","issn_l":null,"issn":null,"is_oa":false,"is_in_doaj":false,"is_core":false,"listed_in":[],"host_organization":"https://openalex.org/P4360969207","host_organization_name":"Baoji University of Arts and Sciences","host_organization_lineage":["https://openalex.org/P4360969207"],"host_organization_lineage_names":["Baoji University of Arts and Sciences"],"type":"journal"},"license":null,"license_id":null,"version":null,"is_accepted":false,"is_published":false,"raw_source_name":"Journal of Baoji University of Arts and Sciences","raw_type":null}],"best_oa_location":null,"sustainable_development_goals":[{"display_name":"Industry, innovation and infrastructure","score":0.5378999710083008,"id":"https://metadata.un.org/sdg/9"}],"study_designs":[],"awards":[],"funders":[],"has_content":{"pdf":false,"grobid_xml":false},"content_urls":null,"referenced_works_count":0,"referenced_works":[],"related_works":["https://openalex.org/W2385832380","https://openalex.org/W2384998553","https://openalex.org/W1568383716","https://openalex.org/W2371811300","https://openalex.org/W2373531991","https://openalex.org/W2124465666","https://openalex.org/W2536168045","https://openalex.org/W4231652937","https://openalex.org/W1834549782","https://openalex.org/W2352790642"],"abstract_inverted_index":{"Aim":[0],"To":[1],"research":[2],"a":[3,9,74],"new":[4],"power":[5],"device":[6,54,80],"that":[7],"is":[8,25,67],"static":[10,20,63],"simulation":[11,21],"model":[12,22,49,64],"of":[13,23,39,47,65],"insulated":[14],"gate":[15],"bipolar":[16],"transistor(IGBT).":[17],"Methods":[18],"A":[19],"IGBT":[24,66,79],"built":[26,62],"and":[27,36,44],"designed":[28],"based":[29],"on":[30],"PSpice":[31],"software.Besides":[32],"analyzing":[33],"the":[34,48,58],"structure":[35],"parameter":[37],"configurations":[38],"this":[40],"model,the":[41],"simulated":[42],"transfer":[43],"output":[45],"characteristics":[46],"are":[50],"compared":[51],"with":[52],"actual":[53],"IRGB30B60K":[55],"after":[56],"simulating":[57],"model.":[59],"Results/Conclusion":[60],"The":[61],"not":[68],"only":[69],"accurate":[70],"but":[71],"also":[72],"has":[73],"higher":[75],"use":[76],"value":[77],"in":[78],"or":[81],"system":[82],"simulation.":[83]},"counts_by_year":[],"updated_date":"2025-10-10T17:16:08.811792","created_date":"2016-06-24T00:00:00"}