{"id":"https://openalex.org/W2371613304","doi":null,"title":"Performance characterization and mechanism analysis of InSb wafer material","display_name":"Performance characterization and mechanism analysis of InSb wafer material","publication_year":2013,"publication_date":"2013-01-01","ids":{"openalex":"https://openalex.org/W2371613304","mag":"2371613304"},"language":"en","primary_location":{"id":"mag:2371613304","doi":null,"is_oa":false,"landing_page_url":"http://en.cnki.com.cn/Article_en/CJFDTOTAL-JGHW201310014.htm","pdf_url":null,"source":{"id":"https://openalex.org/S2764574568","display_name":"Laser & Infrared","issn_l":null,"issn":null,"is_oa":false,"is_in_doaj":false,"is_core":false,"listed_in":[],"host_organization":"https://openalex.org/P4361729682","host_organization_name":"North China Research Institute of Electro-optics","host_organization_lineage":["https://openalex.org/P4361729682"],"host_organization_lineage_names":["North China Research Institute of Electro-optics"],"type":"journal"},"license":null,"license_id":null,"version":null,"is_accepted":false,"is_published":false,"raw_source_name":"Laser & Infrared","raw_type":null},"volume":null,"type":"article","is_traditional":true,"indexed_in":[],"open_access":{"is_oa":false,"oa_status":"closed","oa_url":null,"any_repository_has_fulltext":false},"authorships":[{"author_position":"first","author":{"id":null,"display_name":"Gong Fen","orcid":null,"observed_orcids":[]},"institutions":[{"id":"https://openalex.org/I4210157275","display_name":"North China Research Institute of Electro-optics","ror":"https://ror.org/04sbk5k46","country_code":"CN","type":"facility","lineage":["https://openalex.org/I4210157275"]}],"countries":["CN"],"is_corresponding":true,"raw_author_name":"Gong Fen","raw_affiliation_strings":["North China Research Institute of Electro-optics"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"North China Research Institute of Electro-optics","institution_ids":["https://openalex.org/I4210157275"]}]}],"institutions":[],"countries_distinct_count":1,"institutions_distinct_count":1,"corresponding_author_ids":[],"corresponding_institution_ids":["https://openalex.org/I4210157275"],"apc_list":null,"apc_paid":null,"fwci":0.0,"has_fulltext":false,"cited_by_count":0,"citation_normalized_percentile":{"value":0.21592573,"is_in_top_1_percent":false,"is_in_top_10_percent":false},"cited_by_percentile_year":null,"biblio":{"volume":null,"issue":null,"first_page":null,"last_page":null},"is_retracted":false,"is_paratext":false,"is_xpac":false,"primary_topic":{"id":"https://openalex.org/T11853","display_name":"Semiconductor materials and interfaces","score":0.5654000043869019,"subfield":{"id":"https://openalex.org/subfields/2504","display_name":"Electronic, Optical and Magnetic Materials"},"field":{"id":"https://openalex.org/fields/25","display_name":"Materials Science"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},"topics":[{"id":"https://openalex.org/T11853","display_name":"Semiconductor materials and interfaces","score":0.5654000043869019,"subfield":{"id":"https://openalex.org/subfields/2504","display_name":"Electronic, Optical and Magnetic Materials"},"field":{"id":"https://openalex.org/fields/25","display_name":"Materials Science"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T11637","display_name":"Advanced Semiconductor Detectors and Materials","score":0.2281000018119812,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T11087","display_name":"Solidification and crystal growth phenomena","score":0.04050000011920929,"subfield":{"id":"https://openalex.org/subfields/2505","display_name":"Materials Chemistry"},"field":{"id":"https://openalex.org/fields/25","display_name":"Materials Science"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}}],"keywords":[{"id":"https://openalex.org/keywords/indium-antimonide","display_name":"indium antimonide","score":0.9150000214576721},{"id":"https://openalex.org/keywords/dislocation-density","display_name":"dislocation density","score":0.9520000219345093},{"id":"https://openalex.org/keywords/x-ray-diffraction-linewidth","display_name":"X-ray diffraction linewidth","score":0.6600000262260437},{"id":"https://openalex.org/keywords/doping-concentration","display_name":"doping concentration","score":0.7009999752044678},{"id":"https://openalex.org/keywords/crystal-uniformity","display_name":"crystal uniformity","score":0.7149999737739563},{"id":"https://openalex.org/keywords/growth-mechanism","display_name":"growth mechanism","score":0.527999997138977},{"id":"https://openalex.org/keywords/electronic-properties","display_name":"electronic properties","score":0.6880000233650208}],"concepts":[{"id":"https://openalex.org/C160671074","wikidata":"https://www.wikidata.org/wiki/Q267131","display_name":"Wafer","level":2,"score":0.9447903633117676},{"id":"https://openalex.org/C159122135","wikidata":"https://www.wikidata.org/wiki/Q737571","display_name":"Dislocation","level":2,"score":0.8593603372573853},{"id":"https://openalex.org/C2780841128","wikidata":"https://www.wikidata.org/wiki/Q5073781","display_name":"Characterization (materials science)","level":2,"score":0.7170689105987549},{"id":"https://openalex.org/C192562407","wikidata":"https://www.wikidata.org/wiki/Q228736","display_name":"Materials science","level":0,"score":0.6959841251373291},{"id":"https://openalex.org/C57863236","wikidata":"https://www.wikidata.org/wiki/Q1130571","display_name":"Doping","level":2,"score":0.5952180027961731},{"id":"https://openalex.org/C89611455","wikidata":"https://www.wikidata.org/wiki/Q6804646","display_name":"Mechanism (biology)","level":2,"score":0.5832830667495728},{"id":"https://openalex.org/C49040817","wikidata":"https://www.wikidata.org/wiki/Q193091","display_name":"Optoelectronics","level":1,"score":0.5032054781913757},{"id":"https://openalex.org/C2781285689","wikidata":"https://www.wikidata.org/wiki/Q21921428","display_name":"Crystal (programming language)","level":2,"score":0.4535067081451416},{"id":"https://openalex.org/C159985019","wikidata":"https://www.wikidata.org/wiki/Q181790","display_name":"Composite material","level":1,"score":0.31245481967926025},{"id":"https://openalex.org/C171250308","wikidata":"https://www.wikidata.org/wiki/Q11468","display_name":"Nanotechnology","level":1,"score":0.284610778093338},{"id":"https://openalex.org/C41008148","wikidata":"https://www.wikidata.org/wiki/Q21198","display_name":"Computer science","level":0,"score":0.16180235147476196},{"id":"https://openalex.org/C121332964","wikidata":"https://www.wikidata.org/wiki/Q413","display_name":"Physics","level":0,"score":0.12074699997901917},{"id":"https://openalex.org/C62520636","wikidata":"https://www.wikidata.org/wiki/Q944","display_name":"Quantum mechanics","level":1,"score":0.0},{"id":"https://openalex.org/C199360897","wikidata":"https://www.wikidata.org/wiki/Q9143","display_name":"Programming language","level":1,"score":0.0}],"mesh":[],"locations_count":1,"locations":[{"id":"mag:2371613304","doi":null,"is_oa":false,"landing_page_url":"http://en.cnki.com.cn/Article_en/CJFDTOTAL-JGHW201310014.htm","pdf_url":null,"source":{"id":"https://openalex.org/S2764574568","display_name":"Laser & Infrared","issn_l":null,"issn":null,"is_oa":false,"is_in_doaj":false,"is_core":false,"listed_in":[],"host_organization":"https://openalex.org/P4361729682","host_organization_name":"North China Research Institute of Electro-optics","host_organization_lineage":["https://openalex.org/P4361729682"],"host_organization_lineage_names":["North China Research Institute of Electro-optics"],"type":"journal"},"license":null,"license_id":null,"version":null,"is_accepted":false,"is_published":false,"raw_source_name":"Laser & Infrared","raw_type":null}],"best_oa_location":null,"sustainable_development_goals":[],"study_designs":[],"awards":[],"funders":[],"has_content":{"pdf":false,"grobid_xml":false},"content_urls":null,"referenced_works_count":0,"referenced_works":[],"related_works":["https://openalex.org/W54889048","https://openalex.org/W7131667263","https://openalex.org/W2066271070","https://openalex.org/W2370990401","https://openalex.org/W4237550022","https://openalex.org/W2390135131","https://openalex.org/W2388891795","https://openalex.org/W2261566813","https://openalex.org/W2312591748","https://openalex.org/W3085539109"],"abstract_inverted_index":{"The":[0],"uniformity":[1],"of":[2,18,27],"2InSb":[3],"with":[4,30],"Dislocation":[5],"density,X-ray":[6],"morphology,FWHM":[7],"and":[8,33],"Electronic":[9],"parameter":[10],"wafer":[11,29],"are":[12,36],"characterized.":[13],"Results":[14],"indicate":[15],"the":[16,40],"property":[17],"InSb":[19,28],"crystal":[20],"material":[21],"is":[22],"excellent,and":[23],"area":[24],"distribution":[25],"mechanism":[26],"dislocation":[31],"density":[32],"doping":[34],"concentration":[35],"analyzed":[37],"according":[38],"to":[39],"growth":[41],"principle.":[42]},"counts_by_year":[],"updated_date":"2026-09-29T14:09:16.559479","created_date":"2016-06-24T00:00:00"}