{"id":"https://openalex.org/W2315241069","doi":"https://doi.org/10.1109/tnano.2014.2331706","title":"Growth and Characterization of Self-Assembled InAs Quantum Dots on Si (100) for Monolithic Integration by MBE","display_name":"Growth and Characterization of Self-Assembled InAs Quantum Dots on Si (100) for Monolithic Integration by MBE","publication_year":2014,"publication_date":"2014-06-19","ids":{"openalex":"https://openalex.org/W2315241069","doi":"https://doi.org/10.1109/tnano.2014.2331706","mag":"2315241069"},"language":"en","primary_location":{"id":"doi:10.1109/tnano.2014.2331706","doi":"https://doi.org/10.1109/tnano.2014.2331706","is_oa":false,"landing_page_url":"https://doi.org/10.1109/tnano.2014.2331706","pdf_url":null,"source":{"id":"https://openalex.org/S142331907","display_name":"IEEE Transactions on Nanotechnology","issn_l":"1536-125X","issn":["1536-125X","1941-0085"],"is_oa":false,"is_in_doaj":false,"is_core":true,"listed_in":["cwts-core","dongbi-c","jufo-1","norway-1","poland-100","russia-white-list-1"],"host_organization":"https://openalex.org/P4310319808","host_organization_name":"Institute of Electrical and Electronics Engineers","host_organization_lineage":["https://openalex.org/P4310319808"],"host_organization_lineage_names":["Institute of Electrical and Electronics Engineers"],"type":"journal"},"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"IEEE Transactions on Nanotechnology","raw_type":"journal-article"},"volume":null,"type":"article","indexed_in":["crossref"],"open_access":{"is_oa":false,"oa_status":"closed","oa_url":null,"any_repository_has_fulltext":false},"authorships":[{"author_position":"first","author":{"id":"https://openalex.org/A5065528859","display_name":"Sanjay Kumar Jana","orcid":"https://orcid.org/0000-0001-5143-8000","observed_orcids":["https://orcid.org/0000-0001-5143-8000"]},"institutions":[{"id":"https://openalex.org/I145894827","display_name":"Indian Institute of Technology Kharagpur","ror":"https://ror.org/03w5sq511","country_code":"IN","type":"education","lineage":["https://openalex.org/I145894827"]}],"countries":["IN"],"is_corresponding":false,"raw_author_name":"Sanjay Kumar Jana","raw_affiliation_strings":["Advanced Technology Development Center, Indian Institute of Technology Kharagpur, Kharagpur, India"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Advanced Technology Development Center, Indian Institute of Technology Kharagpur, Kharagpur, India","institution_ids":["https://openalex.org/I145894827"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5000145267","display_name":"Partha Mukhopadhyay","orcid":"https://orcid.org/0000-0002-5838-8007","observed_orcids":["https://orcid.org/0000-0002-5838-8007"]},"institutions":[{"id":"https://openalex.org/I145894827","display_name":"Indian Institute of Technology Kharagpur","ror":"https://ror.org/03w5sq511","country_code":"IN","type":"education","lineage":["https://openalex.org/I145894827"]}],"countries":["IN"],"is_corresponding":false,"raw_author_name":"Partha Mukhopadhyay","raw_affiliation_strings":["Advanced Technology Development Center, Indian Institute of Technology Kharagpur, Kharagpur, India"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Advanced Technology Development Center, Indian Institute of Technology Kharagpur, Kharagpur, India","institution_ids":["https://openalex.org/I145894827"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5064712403","display_name":"Sanjib Kabi","orcid":"https://orcid.org/0000-0003-3681-0438","observed_orcids":["https://orcid.org/0000-0003-3681-0438"]},"institutions":[{"id":"https://openalex.org/I145894827","display_name":"Indian Institute of Technology Kharagpur","ror":"https://ror.org/03w5sq511","country_code":"IN","type":"education","lineage":["https://openalex.org/I145894827"]}],"countries":["IN"],"is_corresponding":false,"raw_author_name":"Sanjib Kabi","raw_affiliation_strings":["Advanced Technology Development Center, Indian Institute of Technology Kharagpur, Kharagpur, India"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Advanced Technology Development Center, Indian Institute of Technology Kharagpur, Kharagpur, India","institution_ids":["https://openalex.org/I145894827"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5067161305","display_name":"Nripendra N. Halder","orcid":"https://orcid.org/0000-0002-8062-6665","observed_orcids":["https://orcid.org/0000-0002-8062-6665"]},"institutions":[{"id":"https://openalex.org/I145894827","display_name":"Indian Institute of Technology Kharagpur","ror":"https://ror.org/03w5sq511","country_code":"IN","type":"education","lineage":["https://openalex.org/I145894827"]}],"countries":["IN"],"is_corresponding":false,"raw_author_name":"Nripendra N. Halder","raw_affiliation_strings":["Advanced Technology Development Center, Indian Institute of Technology Kharagpur, Kharagpur, India"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Advanced Technology Development Center, Indian Institute of Technology Kharagpur, Kharagpur, India","institution_ids":["https://openalex.org/I145894827"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5072576794","display_name":"Ankush Bag","orcid":"https://orcid.org/0000-0003-4038-3037","observed_orcids":["https://orcid.org/0000-0003-4038-3037"]},"institutions":[{"id":"https://openalex.org/I145894827","display_name":"Indian Institute of Technology Kharagpur","ror":"https://ror.org/03w5sq511","country_code":"IN","type":"education","lineage":["https://openalex.org/I145894827"]}],"countries":["IN"],"is_corresponding":false,"raw_author_name":"Ankush Bag","raw_affiliation_strings":["Advanced Technology Development Center, Indian Institute of Technology Kharagpur, Kharagpur, India"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Advanced Technology Development Center, Indian Institute of Technology Kharagpur, Kharagpur, India","institution_ids":["https://openalex.org/I145894827"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5102808804","display_name":"Saptarsi Ghosh","orcid":"https://orcid.org/0000-0001-8223-115X","observed_orcids":["https://orcid.org/0000-0001-8223-115X"]},"institutions":[{"id":"https://openalex.org/I145894827","display_name":"Indian Institute of Technology Kharagpur","ror":"https://ror.org/03w5sq511","country_code":"IN","type":"education","lineage":["https://openalex.org/I145894827"]}],"countries":["IN"],"is_corresponding":false,"raw_author_name":"Saptarsi Ghosh","raw_affiliation_strings":["Advanced Technology Development Center, Indian Institute of Technology Kharagpur, Kharagpur, India"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Advanced Technology Development Center, Indian Institute of Technology Kharagpur, Kharagpur, India","institution_ids":["https://openalex.org/I145894827"]}]},{"author_position":"last","author":{"id":"https://openalex.org/A5012071784","display_name":"Debdut Biswas","orcid":"https://orcid.org/0000-0002-1825-5082","observed_orcids":["https://orcid.org/0000-0002-1825-5082"]},"institutions":[{"id":"https://openalex.org/I145894827","display_name":"Indian Institute of Technology Kharagpur","ror":"https://ror.org/03w5sq511","country_code":"IN","type":"education","lineage":["https://openalex.org/I145894827"]}],"countries":["IN"],"is_corresponding":false,"raw_author_name":"D. Biswas","raw_affiliation_strings":["Advanced Technology Development Center, Indian Institute of Technology Kharagpur, Kharagpur, India"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Advanced Technology Development Center, Indian Institute of Technology Kharagpur, Kharagpur, India","institution_ids":["https://openalex.org/I145894827"]}]}],"institutions":[],"countries_distinct_count":1,"institutions_distinct_count":1,"corresponding_author_ids":[],"corresponding_institution_ids":["https://openalex.org/I145894827"],"apc_list":{"value":2645,"currency":"USD","value_usd":2645},"apc_paid":null,"fwci":0.4739,"has_fulltext":false,"cited_by_count":6,"citation_normalized_percentile":{"value":0.62487515,"is_in_top_1_percent":false,"is_in_top_10_percent":false},"cited_by_percentile_year":{"min":88,"max":96},"biblio":{"volume":"13","issue":"5","first_page":"917","last_page":"925"},"is_retracted":false,"is_paratext":false,"is_xpac":false,"primary_topic":{"id":"https://openalex.org/T10022","display_name":"Semiconductor Quantum Structures and Devices","score":0.9970999956130981,"subfield":{"id":"https://openalex.org/subfields/3107","display_name":"Atomic and Molecular Physics, and Optics"},"field":{"id":"https://openalex.org/fields/31","display_name":"Physics and Astronomy"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},"topics":[{"id":"https://openalex.org/T10022","display_name":"Semiconductor Quantum Structures and Devices","score":0.9970999956130981,"subfield":{"id":"https://openalex.org/subfields/3107","display_name":"Atomic and Molecular Physics, and Optics"},"field":{"id":"https://openalex.org/fields/31","display_name":"Physics and Astronomy"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T11429","display_name":"Semiconductor Lasers and Optical Devices","score":0.0005000000237487257,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T11637","display_name":"Advanced Semiconductor Detectors and Materials","score":0.0003000000142492354,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}}],"keywords":[{"id":"https://openalex.org/keywords/inas-quantum-dots","display_name":"InAs quantum dots","score":0.9800000190734863},{"id":"https://openalex.org/keywords/self-assembled-quantum-dots","display_name":"self-assembled quantum dots","score":0.8619999885559082},{"id":"https://openalex.org/keywords/si-100-substrate","display_name":"Si(100) substrate","score":0.8569999933242798},{"id":"https://openalex.org/keywords/monolithic-integration","display_name":"monolithic integration","score":0.8489999771118164},{"id":"https://openalex.org/keywords/volmer-weber-growth","display_name":"Volmer-Weber growth","score":0.8949999809265137},{"id":"https://openalex.org/keywords/photoluminescence","display_name":"photoluminescence","score":0.8220000267028809},{"id":"https://openalex.org/keywords/carrier-confinement","display_name":"carrier confinement","score":0.8410000205039978},{"id":"https://openalex.org/keywords/temperature-dependence-of-band-gap","display_name":"temperature dependence of band gap","score":0.7360000014305115},{"id":"https://openalex.org/keywords/raman-phonon-modes","display_name":"Raman phonon modes","score":0.6119999885559082},{"id":"https://openalex.org/keywords/strain-analysis","display_name":"strain analysis","score":0.875},{"id":"https://openalex.org/keywords/size-distribution","display_name":"size distribution","score":0.4729999899864197},{"id":"https://openalex.org/keywords/buffer-free-growth","display_name":"buffer-free growth","score":0.41600000858306885}],"concepts":[{"id":"https://openalex.org/C124657808","wikidata":"https://www.wikidata.org/wiki/Q1133068","display_name":"Quantum dot","level":2,"score":0.8336622714996338},{"id":"https://openalex.org/C85080765","wikidata":"https://www.wikidata.org/wiki/Q614893","display_name":"Photoluminescence","level":2,"score":0.789353609085083},{"id":"https://openalex.org/C3792809","wikidata":"https://www.wikidata.org/wiki/Q898542","display_name":"Molecular beam epitaxy","level":4,"score":0.6764596104621887},{"id":"https://openalex.org/C200096950","wikidata":"https://www.wikidata.org/wiki/Q455003","display_name":"Reflection high-energy electron diffraction","level":4,"score":0.5934567451477051},{"id":"https://openalex.org/C183152904","wikidata":"https://www.wikidata.org/wiki/Q76250","display_name":"Blueshift","level":3,"score":0.582409143447876},{"id":"https://openalex.org/C181966813","wikidata":"https://www.wikidata.org/wiki/Q806352","display_name":"Band gap","level":2,"score":0.527073085308075},{"id":"https://openalex.org/C192562407","wikidata":"https://www.wikidata.org/wiki/Q228736","display_name":"Materials science","level":0,"score":0.5056214332580566},{"id":"https://openalex.org/C113196181","wikidata":"https://www.wikidata.org/wiki/Q485223","display_name":"Analytical Chemistry (journal)","level":2,"score":0.5001282691955566},{"id":"https://openalex.org/C26771246","wikidata":"https://www.wikidata.org/wiki/Q321095","display_name":"Scanning electron microscope","level":2,"score":0.46590739488601685},{"id":"https://openalex.org/C181500209","wikidata":"https://www.wikidata.org/wiki/Q215328","display_name":"Excited state","level":2,"score":0.4571409821510315},{"id":"https://openalex.org/C77557913","wikidata":"https://www.wikidata.org/wiki/Q864822","display_name":"Electron diffraction","level":3,"score":0.4450673758983612},{"id":"https://openalex.org/C32891209","wikidata":"https://www.wikidata.org/wiki/Q483666","display_name":"Spectroscopy","level":2,"score":0.4289613962173462},{"id":"https://openalex.org/C8010536","wikidata":"https://www.wikidata.org/wiki/Q160398","display_name":"Crystallography","level":1,"score":0.3266843557357788},{"id":"https://openalex.org/C110738630","wikidata":"https://www.wikidata.org/wiki/Q1135540","display_name":"Epitaxy","level":3,"score":0.3247678875923157},{"id":"https://openalex.org/C207114421","wikidata":"https://www.wikidata.org/wiki/Q133900","display_name":"Diffraction","level":2,"score":0.3158789873123169},{"id":"https://openalex.org/C49040817","wikidata":"https://www.wikidata.org/wiki/Q193091","display_name":"Optoelectronics","level":1,"score":0.3081625998020172},{"id":"https://openalex.org/C185592680","wikidata":"https://www.wikidata.org/wiki/Q2329","display_name":"Chemistry","level":0,"score":0.2899095416069031},{"id":"https://openalex.org/C171250308","wikidata":"https://www.wikidata.org/wiki/Q11468","display_name":"Nanotechnology","level":1,"score":0.2871144413948059},{"id":"https://openalex.org/C2779227376","wikidata":"https://www.wikidata.org/wiki/Q6505497","display_name":"Layer (electronics)","level":2,"score":0.2143191397190094},{"id":"https://openalex.org/C121332964","wikidata":"https://www.wikidata.org/wiki/Q413","display_name":"Physics","level":0,"score":0.21360620856285095},{"id":"https://openalex.org/C184779094","wikidata":"https://www.wikidata.org/wiki/Q26383","display_name":"Atomic physics","level":1,"score":0.19930997490882874},{"id":"https://openalex.org/C120665830","wikidata":"https://www.wikidata.org/wiki/Q14620","display_name":"Optics","level":1,"score":0.19268348813056946},{"id":"https://openalex.org/C62520636","wikidata":"https://www.wikidata.org/wiki/Q944","display_name":"Quantum mechanics","level":1,"score":0.0},{"id":"https://openalex.org/C159985019","wikidata":"https://www.wikidata.org/wiki/Q181790","display_name":"Composite material","level":1,"score":0.0},{"id":"https://openalex.org/C43617362","wikidata":"https://www.wikidata.org/wiki/Q170050","display_name":"Chromatography","level":1,"score":0.0}],"mesh":[],"locations_count":1,"locations":[{"id":"doi:10.1109/tnano.2014.2331706","doi":"https://doi.org/10.1109/tnano.2014.2331706","is_oa":false,"landing_page_url":"https://doi.org/10.1109/tnano.2014.2331706","pdf_url":null,"source":{"id":"https://openalex.org/S142331907","display_name":"IEEE Transactions on Nanotechnology","issn_l":"1536-125X","issn":["1536-125X","1941-0085"],"is_oa":false,"is_in_doaj":false,"is_core":true,"listed_in":["cwts-core","dongbi-c","jufo-1","norway-1","poland-100","russia-white-list-1"],"host_organization":"https://openalex.org/P4310319808","host_organization_name":"Institute of Electrical and Electronics Engineers","host_organization_lineage":["https://openalex.org/P4310319808"],"host_organization_lineage_names":["Institute of Electrical and Electronics Engineers"],"type":"journal"},"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"IEEE Transactions on Nanotechnology","raw_type":"journal-article"}],"best_oa_location":null,"sustainable_development_goals":[],"study_designs":[],"awards":[],"funders":[{"id":"https://openalex.org/F4320320719","display_name":"Department of Science and Technology, Ministry of Science and Technology, India","ror":"https://ror.org/0101xrq71"}],"has_content":{"pdf":false,"grobid_xml":false},"content_urls":null,"referenced_works_count":40,"referenced_works":["https://openalex.org/W233111916","https://openalex.org/W428100474","https://openalex.org/W1964394642","https://openalex.org/W1972663914","https://openalex.org/W1979487987","https://openalex.org/W1983758764","https://openalex.org/W1987570683","https://openalex.org/W1988351361","https://openalex.org/W1991834481","https://openalex.org/W1991876866","https://openalex.org/W1991988744","https://openalex.org/W1994099932","https://openalex.org/W1997419288","https://openalex.org/W2006168202","https://openalex.org/W2006271366","https://openalex.org/W2012471521","https://openalex.org/W2019160358","https://openalex.org/W2024470517","https://openalex.org/W2025027810","https://openalex.org/W2027903272","https://openalex.org/W2037366627","https://openalex.org/W2040977052","https://openalex.org/W2049568793","https://openalex.org/W2050704515","https://openalex.org/W2053293089","https://openalex.org/W2053773818","https://openalex.org/W2062697376","https://openalex.org/W2069256472","https://openalex.org/W2070432007","https://openalex.org/W2070609332","https://openalex.org/W2072055023","https://openalex.org/W2083027307","https://openalex.org/W2087434957","https://openalex.org/W2097101350","https://openalex.org/W2097625518","https://openalex.org/W2108545049","https://openalex.org/W2121761828","https://openalex.org/W2166685210","https://openalex.org/W3098393631","https://openalex.org/W4254436656"],"related_works":["https://openalex.org/W2061186289","https://openalex.org/W2077411922","https://openalex.org/W1971787365","https://openalex.org/W2064271948","https://openalex.org/W4250341011","https://openalex.org/W2810417146","https://openalex.org/W2060938103","https://openalex.org/W2039513791","https://openalex.org/W7038395175","https://openalex.org/W2044876085"],"abstract_inverted_index":{"High-density,":[0],"self-assembled":[1],"InAs":[2,103,229],"quantum":[3,104,230],"dots":[4,59,105,172,182,231],"were":[5,40,60,81,106,183],"grown":[6,91],"on":[7],"Si":[8,29],"(100)":[9],"substrates":[10],"without":[11],"any":[12],"buffer":[13],"layer":[14],"by":[15,42,108,175,232,260],"solidsource":[16],"molecular":[17],"beam":[18],"epitaxy,":[19],"following":[20],"Volmer-Weber":[21],"growth":[22,32],"mode.":[23],"The":[24,78,146,167,190,201,254],"reconstructed":[25],"(2":[26],"\u00d7":[27,86],"1)":[28],"surface":[30],"and":[31,54,71,115,129,141,217,239,247,284],"transition":[33],"from":[34,136,271],"two-dimensional":[35],"(2-D)":[36],"to":[37,83,156,185,242],"three-dimensional":[38],"(3-D)":[39],"observed":[41,107,123,197,203,270],"in":[43,188,211,227,276],"situ":[44],"reflection":[45],"high":[46],"energy":[47,72],"electron":[48,64],"diffraction":[49],"(RHEED).":[50],"Surface":[51],"morphology,":[52],"shape,":[53],"chemical":[55],"composition":[56],"of":[57,98,102,164,171,205],"these":[58],"investigated":[61,259],"through":[62],"scanning":[63],"microscopy":[65,69],"(SEM),":[66],"atomic":[67],"force":[68],"(AFM),":[70],"dispersive":[73],"X-ray":[74,262],"(EDX)":[75],"analysis,":[76],"respectively.":[77,145,253],"dot":[79],"densities":[80],"found":[82,155],"be":[84,186],"4":[85],"1014":[87],"m-2for":[88],"the":[89,137,152,158,181,206,224,228,233,243,266,272],"samples":[90],"at":[92,113,124,198,237,288],"380\u00b0C":[93],"with":[94,208,214],"a":[95],"V/III":[96],"ratio":[97],"13.":[99],"Optical":[100],"properties":[101],"photoluminescence":[109],"(PL)":[110],"spectroscopy":[111],"both":[112,215],"room":[114],"low":[116],"temperatures.":[117],"Room-temperature":[118],"PL":[119,169,192],"(RTPL)":[120],"peak":[121,194],"was":[122,173,196,210,258,269],"1.016":[125],"eV":[126,131],"(~1220":[127],"nm)":[128,133],"1.05":[130],"(~1180.95":[132],"presumably":[134],"originating":[135],"ground":[138],"state":[139,143,268],"(GS)":[140],"excited":[142],"(ES),":[144],"3-D":[147],"carrier":[148,225],"confinement":[149,226],"rather":[150],"than":[151],"strain":[153,256,267],"is":[154],"have":[157],"dominating":[159],"role,":[160],"which":[161],"causes":[162],"blueshift":[163],"0.662":[165],"eV.":[166,200],"theoretical":[168],"spectrum":[170],"obtained":[174],"using":[176],"Gaussian":[177],"size":[178],"distribution":[179],"where":[180,265],"assumed":[184],"cubic":[187],"shape.":[189],"low-temperature":[191],"(LTPL)":[193],"position":[195],"1.16":[199],"experimentally":[202],"variation":[204],"bandgap":[207],"temperature":[209],"close":[212],"proximity":[213],"Varshini":[216],"Vina":[218],"model.":[219],"Raman":[220],"spectroscopic":[221],"analysis":[222,257],"confirms":[223],"downward":[234],"frequency":[235],"shift":[236],"216.57":[238],"237.96":[240],"cm-1corresponding":[241],"transverse":[244],"optical":[245,249],"(TO)":[246],"longitudinal":[248],"(LO)":[250],"phonon":[251],"modes,":[252],"qualitative":[255],"high-resolution":[261],"diffractions":[263],"(HRXRD)":[264],"reciprocal":[273],"space":[274],"mapping":[275],"symmetric":[277],"(004),":[278],"as":[279,281],"well":[280],"grazing":[282,285],"exit":[283],"incidence":[286],"mode":[287],"(224)":[289],"plane.":[290]},"counts_by_year":[{"year":2023,"cited_by_count":2},{"year":2021,"cited_by_count":1},{"year":2017,"cited_by_count":2},{"year":2015,"cited_by_count":1}],"updated_date":"2026-11-04T10:54:05.112534","created_date":"2016-06-24T00:00:00"}