{"id":"https://openalex.org/W2304495689","doi":"https://doi.org/10.1109/ted.2016.2603468","title":"Trap Assisted Tunneling and Its Effect on Subthreshold Swing of Tunnel FETs","display_name":"Trap Assisted Tunneling and Its Effect on Subthreshold Swing of Tunnel FETs","publication_year":2016,"publication_date":"2016-09-07","ids":{"openalex":"https://openalex.org/W2304495689","doi":"https://doi.org/10.1109/ted.2016.2603468","mag":"2304495689"},"language":"en","primary_location":{"id":"doi:10.1109/ted.2016.2603468","doi":"https://doi.org/10.1109/ted.2016.2603468","is_oa":false,"landing_page_url":"https://doi.org/10.1109/ted.2016.2603468","pdf_url":null,"source":{"id":"https://openalex.org/S162355128","display_name":"IEEE Transactions on Electron Devices","issn_l":"0018-9383","issn":["0018-9383","1557-9646"],"is_oa":false,"is_in_doaj":false,"is_core":true,"listed_in":["cwts-core","dongbi-b","jufo-3","norway-2","poland-100","russia-white-list-1"],"host_organization":"https://openalex.org/P4310319808","host_organization_name":"Institute of Electrical and Electronics Engineers","host_organization_lineage":["https://openalex.org/P4310319808"],"host_organization_lineage_names":["Institute of Electrical and Electronics Engineers"],"type":"journal"},"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"IEEE Transactions on Electron Devices","raw_type":"journal-article"},"volume":null,"type":"article","is_traditional":true,"indexed_in":["arxiv","crossref","datacite"],"open_access":{"is_oa":true,"oa_status":"green","oa_url":"https://arxiv.org/pdf/1603.06654","any_repository_has_fulltext":true},"authorships":[{"author_position":"first","author":{"id":"https://openalex.org/A5016469888","display_name":"Redwan N. Sajjad","orcid":"https://orcid.org/0000-0001-8385-0438","observed_orcids":["https://orcid.org/0000-0001-8385-0438"]},"institutions":[{"id":"https://openalex.org/I63966007","display_name":"Massachusetts Institute of Technology","ror":"https://ror.org/042nb2s44","country_code":"US","type":"education","lineage":["https://openalex.org/I63966007"]}],"countries":["US"],"is_corresponding":false,"raw_author_name":"Redwan N. Sajjad","raw_affiliation_strings":["Microsystems Technology Laboratories, Massachusetts Institute of Technology, Cambridge, MA, USA"],"raw_orcid":"https://orcid.org/0000-0001-8385-0438","affiliations":[{"raw_affiliation_string":"Microsystems Technology Laboratories, Massachusetts Institute of Technology, Cambridge, MA, USA","institution_ids":["https://openalex.org/I63966007"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5111888752","display_name":"Winston Chern","orcid":"https://orcid.org/0000-0002-5452-8009","observed_orcids":["https://orcid.org/0000-0002-5452-8009"]},"institutions":[{"id":"https://openalex.org/I63966007","display_name":"Massachusetts Institute of Technology","ror":"https://ror.org/042nb2s44","country_code":"US","type":"education","lineage":["https://openalex.org/I63966007"]}],"countries":["US"],"is_corresponding":false,"raw_author_name":"Winston Chern","raw_affiliation_strings":["Microsystems Technology Laboratories, Massachusetts Institute of Technology, Cambridge, MA, USA"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Microsystems Technology Laboratories, Massachusetts Institute of Technology, Cambridge, MA, USA","institution_ids":["https://openalex.org/I63966007"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5109040722","display_name":"Judy L. Hoyt","orcid":null,"observed_orcids":[]},"institutions":[{"id":"https://openalex.org/I63966007","display_name":"Massachusetts Institute of Technology","ror":"https://ror.org/042nb2s44","country_code":"US","type":"education","lineage":["https://openalex.org/I63966007"]}],"countries":["US"],"is_corresponding":false,"raw_author_name":"Judy L. Hoyt","raw_affiliation_strings":["Microsystems Technology Laboratories, Massachusetts Institute of Technology, Cambridge, MA, USA"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Microsystems Technology Laboratories, Massachusetts Institute of Technology, Cambridge, MA, USA","institution_ids":["https://openalex.org/I63966007"]}]},{"author_position":"last","author":{"id":"https://openalex.org/A5056314310","display_name":"D.A. Antoniadis","orcid":"https://orcid.org/0000-0002-4836-6525","observed_orcids":["https://orcid.org/0000-0002-4836-6525"]},"institutions":[{"id":"https://openalex.org/I63966007","display_name":"Massachusetts Institute of Technology","ror":"https://ror.org/042nb2s44","country_code":"US","type":"education","lineage":["https://openalex.org/I63966007"]}],"countries":["US"],"is_corresponding":false,"raw_author_name":"Dimitri A. Antoniadis","raw_affiliation_strings":["Microsystems Technology Laboratories, Massachusetts Institute of Technology, Cambridge, MA, USA"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Microsystems Technology Laboratories, Massachusetts Institute of Technology, Cambridge, MA, USA","institution_ids":["https://openalex.org/I63966007"]}]}],"institutions":[],"countries_distinct_count":1,"institutions_distinct_count":1,"corresponding_author_ids":[],"corresponding_institution_ids":["https://openalex.org/I63966007"],"apc_list":{"value":2645,"currency":"USD","value_usd":2645},"apc_paid":null,"fwci":5.1468,"has_fulltext":true,"cited_by_count":147,"citation_normalized_percentile":{"value":0.95781816,"is_in_top_1_percent":false,"is_in_top_10_percent":true},"cited_by_percentile_year":{"min":88,"max":100},"biblio":{"volume":"63","issue":"11","first_page":"4380","last_page":"4387"},"is_retracted":false,"is_paratext":false,"is_xpac":false,"primary_topic":{"id":"https://openalex.org/T10558","display_name":"Advancements in Semiconductor Devices and Circuit Design","score":0.9761000275611877,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},"topics":[{"id":"https://openalex.org/T10558","display_name":"Advancements in Semiconductor Devices and Circuit Design","score":0.9761000275611877,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T10472","display_name":"Semiconductor materials and devices","score":0.01979999989271164,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T10275","display_name":"2D Materials and Applications","score":0.0005000000237487257,"subfield":{"id":"https://openalex.org/subfields/2505","display_name":"Materials Chemistry"},"field":{"id":"https://openalex.org/fields/25","display_name":"Materials Science"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}}],"keywords":[{"id":"https://openalex.org/keywords/trap-assisted-tunneling","display_name":"trap-assisted tunneling","score":0.9160000085830688},{"id":"https://openalex.org/keywords/tunnel-field-effect-transistor","display_name":"tunnel field-effect transistor","score":0.9449999928474426},{"id":"https://openalex.org/keywords/subthreshold-swing","display_name":"subthreshold swing","score":0.890999972820282},{"id":"https://openalex.org/keywords/band-to-band-tunneling","display_name":"band-to-band tunneling","score":0.9509999752044678},{"id":"https://openalex.org/keywords/shockley-read-hall-recombination","display_name":"Shockley-Read-Hall recombination","score":0.7820000052452087},{"id":"https://openalex.org/keywords/phonon-assisted-tunneling","display_name":"phonon-assisted tunneling","score":0.8050000071525574},{"id":"https://openalex.org/keywords/leakage-current","display_name":"leakage current","score":0.796999990940094},{"id":"https://openalex.org/keywords/urbach-tail","display_name":"Urbach tail","score":0.777999997138977},{"id":"https://openalex.org/keywords/surface-trap-density","display_name":"surface trap density","score":0.972000002861023},{"id":"https://openalex.org/keywords/gate-all-around-transistors","display_name":"gate-all-around transistors","score":0.7889999747276306},{"id":"https://openalex.org/keywords/double-gate-transistors","display_name":"double-gate transistors","score":0.9039999842643738},{"id":"https://openalex.org/keywords/iii-v-materials","display_name":"III-V materials","score":0.5960000157356262}],"concepts":[{"id":"https://openalex.org/C120398109","wikidata":"https://www.wikidata.org/wiki/Q175751","display_name":"Quantum tunnelling","level":2,"score":0.8137000203132629},{"id":"https://openalex.org/C60799052","wikidata":"https://www.wikidata.org/wiki/Q46221","display_name":"Electric field","level":2,"score":0.5583999752998352},{"id":"https://openalex.org/C156465305","wikidata":"https://www.wikidata.org/wiki/Q1658601","display_name":"Subthreshold conduction","level":4,"score":0.5288000106811523},{"id":"https://openalex.org/C2777042071","wikidata":"https://www.wikidata.org/wiki/Q6509304","display_name":"Leakage (economics)","level":2,"score":0.5120000243186951},{"id":"https://openalex.org/C2982823382","wikidata":"https://www.wikidata.org/wiki/Q7632226","display_name":"Subthreshold swing","level":5,"score":0.5009999871253967},{"id":"https://openalex.org/C49040817","wikidata":"https://www.wikidata.org/wiki/Q193091","display_name":"Optoelectronics","level":1,"score":0.48919999599456787},{"id":"https://openalex.org/C26873012","wikidata":"https://www.wikidata.org/wiki/Q214781","display_name":"Condensed matter physics","level":1,"score":0.4860000014305115},{"id":"https://openalex.org/C192562407","wikidata":"https://www.wikidata.org/wiki/Q228736","display_name":"Materials science","level":0,"score":0.48429998755455017},{"id":"https://openalex.org/C172385210","wikidata":"https://www.wikidata.org/wiki/Q5339","display_name":"Transistor","level":3,"score":0.45989999175071716},{"id":"https://openalex.org/C121099081","wikidata":"https://www.wikidata.org/wiki/Q665580","display_name":"Trap (plumbing)","level":2,"score":0.43790000677108765},{"id":"https://openalex.org/C207740977","wikidata":"https://www.wikidata.org/wiki/Q234072","display_name":"Current density","level":2,"score":0.41659998893737793},{"id":"https://openalex.org/C108225325","wikidata":"https://www.wikidata.org/wiki/Q11456","display_name":"Semiconductor","level":2,"score":0.4147000014781952},{"id":"https://openalex.org/C148043351","wikidata":"https://www.wikidata.org/wiki/Q4456944","display_name":"Current (fluid)","level":2,"score":0.414000004529953},{"id":"https://openalex.org/C116984233","wikidata":"https://www.wikidata.org/wiki/Q7853307","display_name":"Tunnel effect","level":3,"score":0.4041000008583069},{"id":"https://openalex.org/C145598152","wikidata":"https://www.wikidata.org/wiki/Q176097","display_name":"Field-effect transistor","level":4,"score":0.32989999651908875},{"id":"https://openalex.org/C201966971","wikidata":"https://www.wikidata.org/wiki/Q844922","display_name":"Rectangular potential barrier","level":2,"score":0.3000999987125397},{"id":"https://openalex.org/C103566474","wikidata":"https://www.wikidata.org/wiki/Q7632226","display_name":"Subthreshold slope","level":5,"score":0.28049999475479126},{"id":"https://openalex.org/C121332964","wikidata":"https://www.wikidata.org/wiki/Q413","display_name":"Physics","level":0,"score":0.2766000032424927},{"id":"https://openalex.org/C58570533","wikidata":"https://www.wikidata.org/wiki/Q55451","display_name":"Electric potential","level":3,"score":0.27219998836517334},{"id":"https://openalex.org/C2778413303","wikidata":"https://www.wikidata.org/wiki/Q210793","display_name":"MOSFET","level":4,"score":0.26840001344680786}],"mesh":[],"locations_count":3,"locations":[{"id":"doi:10.1109/ted.2016.2603468","doi":"https://doi.org/10.1109/ted.2016.2603468","is_oa":false,"landing_page_url":"https://doi.org/10.1109/ted.2016.2603468","pdf_url":null,"source":{"id":"https://openalex.org/S162355128","display_name":"IEEE Transactions on Electron Devices","issn_l":"0018-9383","issn":["0018-9383","1557-9646"],"is_oa":false,"is_in_doaj":false,"is_core":true,"listed_in":["cwts-core","dongbi-b","jufo-3","norway-2","poland-100","russia-white-list-1"],"host_organization":"https://openalex.org/P4310319808","host_organization_name":"Institute of Electrical and Electronics Engineers","host_organization_lineage":["https://openalex.org/P4310319808"],"host_organization_lineage_names":["Institute of Electrical and Electronics Engineers"],"type":"journal"},"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"IEEE Transactions on Electron Devices","raw_type":"journal-article"},{"id":"pmh:oai:arXiv.org:1603.06654","doi":null,"is_oa":true,"landing_page_url":"http://arxiv.org/abs/1603.06654","pdf_url":"https://arxiv.org/pdf/1603.06654","source":{"id":"https://openalex.org/S4306400194","display_name":"arXiv (Cornell University)","issn_l":"2331-8422","issn":["2331-8422"],"is_oa":true,"is_in_doaj":false,"is_core":false,"listed_in":[],"host_organization":"https://openalex.org/I205783295","host_organization_name":"Cornell University","host_organization_lineage":["https://openalex.org/I205783295"],"host_organization_lineage_names":[],"type":"repository"},"license":null,"license_id":null,"version":"submittedVersion","is_accepted":false,"is_published":false,"raw_source_name":null,"raw_type":"text"},{"id":"doi:10.48550/arxiv.1603.06654","doi":"https://doi.org/10.48550/arxiv.1603.06654","is_oa":true,"landing_page_url":"https://doi.org/10.48550/arxiv.1603.06654","pdf_url":null,"source":{"id":"https://openalex.org/S4306400194","display_name":"arXiv (Cornell University)","issn_l":"2331-8422","issn":["2331-8422"],"is_oa":true,"is_in_doaj":false,"is_core":false,"listed_in":[],"host_organization":"https://openalex.org/I205783295","host_organization_name":"Cornell University","host_organization_lineage":["https://openalex.org/I205783295"],"host_organization_lineage_names":[],"type":"repository"},"license":null,"license_id":null,"version":null,"is_accepted":false,"is_published":false,"raw_source_name":null,"raw_type":"article-journal"}],"best_oa_location":{"id":"pmh:oai:arXiv.org:1603.06654","doi":null,"is_oa":true,"landing_page_url":"http://arxiv.org/abs/1603.06654","pdf_url":"https://arxiv.org/pdf/1603.06654","source":{"id":"https://openalex.org/S4306400194","display_name":"arXiv (Cornell University)","issn_l":"2331-8422","issn":["2331-8422"],"is_oa":true,"is_in_doaj":false,"is_core":false,"listed_in":[],"host_organization":"https://openalex.org/I205783295","host_organization_name":"Cornell University","host_organization_lineage":["https://openalex.org/I205783295"],"host_organization_lineage_names":[],"type":"repository"},"license":null,"license_id":null,"version":"submittedVersion","is_accepted":false,"is_published":false,"raw_source_name":null,"raw_type":"text"},"sustainable_development_goals":[],"study_designs":[],"awards":[{"id":"https://openalex.org/G2116205080","display_name":null,"funder_award_id":"1227020-EEC","funder_id":"https://openalex.org/F4320306087","funder_display_name":"Semiconductor Research Corporation"},{"id":"https://openalex.org/G5008666615","display_name":"Network for Computational Nanotechnology - NEEDS Node","funder_award_id":"1227020","funder_id":"https://openalex.org/F4320306076","funder_display_name":"National Science Foundation"},{"id":"https://openalex.org/G7133450431","display_name":"Center for Energy Efficient Electronics Science (Center for E3S)","funder_award_id":"0939514","funder_id":"https://openalex.org/F4320306076","funder_display_name":"National Science Foundation"}],"funders":[{"id":"https://openalex.org/F4320306076","display_name":"National Science Foundation","ror":"https://ror.org/021nxhr62"},{"id":"https://openalex.org/F4320306087","display_name":"Semiconductor Research Corporation","ror":"https://ror.org/047z4n946"},{"id":"https://openalex.org/F4320310260","display_name":"University of Notre Dame","ror":"https://ror.org/00mkhxb43"},{"id":"https://openalex.org/F4320338291","display_name":"Sandia National Laboratories","ror":"https://ror.org/01apwpt12"}],"has_content":{"grobid_xml":true,"pdf":true},"content_urls":{"pdf":"https://content.openalex.org/works/W2304495689.pdf","grobid_xml":"https://content.openalex.org/works/W2304495689.grobid-xml"},"referenced_works_count":41,"referenced_works":["https://openalex.org/W1489206931","https://openalex.org/W1722904894","https://openalex.org/W1778822350","https://openalex.org/W1876422086","https://openalex.org/W1966518304","https://openalex.org/W1982017801","https://openalex.org/W1982556831","https://openalex.org/W1986727435","https://openalex.org/W2004475047","https://openalex.org/W2009624223","https://openalex.org/W2018191826","https://openalex.org/W2020292457","https://openalex.org/W2027207617","https://openalex.org/W2037701916","https://openalex.org/W2056422400","https://openalex.org/W2058145070","https://openalex.org/W2059631927","https://openalex.org/W2064990487","https://openalex.org/W2066471473","https://openalex.org/W2075134976","https://openalex.org/W2076070369","https://openalex.org/W2088888288","https://openalex.org/W2089087993","https://openalex.org/W2090972533","https://openalex.org/W2093950219","https://openalex.org/W2110584581","https://openalex.org/W2111852168","https://openalex.org/W2112120447","https://openalex.org/W2129688999","https://openalex.org/W2133800303","https://openalex.org/W2134228065","https://openalex.org/W2135827787","https://openalex.org/W2144970115","https://openalex.org/W2147194092","https://openalex.org/W2192681950","https://openalex.org/W2289185262","https://openalex.org/W2290772857","https://openalex.org/W2297724148","https://openalex.org/W2490765418","https://openalex.org/W6647882734","https://openalex.org/W6696254656"],"related_works":["https://openalex.org/W2509835254","https://openalex.org/W2801426334","https://openalex.org/W1965944943","https://openalex.org/W2174522777","https://openalex.org/W4399850637","https://openalex.org/W3039707257","https://openalex.org/W2738570965","https://openalex.org/W2527996149","https://openalex.org/W2035219654","https://openalex.org/W1966227433"],"abstract_inverted_index":{"We":[0,162],"provide":[1],"a":[2,23,36],"detailed":[3],"study":[4],"of":[5,59,66,142,167,171],"the":[6,29,46,55,60,81,86,91,103,113,117,127,140,143,148,165,168,172,178,183],"oxide-":[7],"semiconductor":[8],"interface":[9],"trap":[10,128,180],"assisted":[11,48],"tunneling":[12,31,88],"(TAT)":[13],"mechanism":[14],"in":[15,145],"tunnel":[16],"FETs":[17],"to":[18,72,101,132,155],"show":[19,41,125],"how":[20],"it":[21],"contributes":[22],"major":[24],"leakage":[25,114],"current":[26,50,62,105,119],"path":[27],"before":[28],"band-to-band":[30],"(BTBT)":[32],"is":[33],"initiated.":[34],"With":[35],"modified":[37],"Shockley-Read-Hall":[38],"formalism,":[39],"we":[40],"that":[42,126,164],"at":[43,159],"room":[44,160],"temperature,":[45],"phonon":[47],"TAT":[49,92],"always":[51],"dominates":[52],"and":[53,77,177],"obscures":[54],"steep":[56,149],"turn":[57,150],"ON":[58,151],"BTBT":[61,104,118],"for":[63,147],"common":[64],"densities":[65],"traps.":[67],"Our":[68],"results":[69],"are":[70,83],"applicable":[71],"top":[73],"gate,":[74,76],"double":[75],"gate-all-around":[78],"structures,":[79],"where":[80],"traps":[82],"positioned":[84],"between":[85],"source-channel":[87],"regions.":[89],"Since":[90],"has":[93,131],"strong":[94],"dependence":[95],"on":[96],"electric":[97,109],"field,":[98],"any":[99],"effort":[100],"increase":[102],"by":[106,135],"enhancing":[107],"local":[108],"field":[110],"also":[111],"increases":[112],"current.":[115],"Unless":[116],"can":[120],"be":[121,133,156],"increased":[122],"separately,":[123],"calculations":[124],"density":[129,181],"Dit":[130],"decreased":[134],"40-100":[136],"times":[137],"compared":[138],"with":[139],"state":[141],"art":[144],"order":[146],"(for":[152],"III-V":[153],"materials)":[154],"clearly":[157],"observable":[158],"temperature.":[161],"find":[163],"combination":[166],"intrinsic":[169],"sharpness":[170],"band":[173],"edges":[174],"(Urbach":[175],"tail)":[176],"surface":[179],"determines":[182],"subthreshold":[184],"swing.":[185]},"counts_by_year":[{"year":2026,"cited_by_count":18},{"year":2025,"cited_by_count":16},{"year":2024,"cited_by_count":17},{"year":2023,"cited_by_count":11},{"year":2022,"cited_by_count":10},{"year":2021,"cited_by_count":14},{"year":2020,"cited_by_count":25},{"year":2019,"cited_by_count":12},{"year":2018,"cited_by_count":13},{"year":2017,"cited_by_count":10},{"year":2016,"cited_by_count":1}],"updated_date":"2026-11-10T11:39:43.021295","created_date":"2016-06-24T00:00:00"}