{"id":"https://openalex.org/W2276199846","doi":"https://doi.org/10.1134/s1063782615090201","title":"Laser interferometric method for determining the carrier diffusion length in semiconductors","display_name":"Laser interferometric method for determining the carrier diffusion length in semiconductors","publication_year":2015,"publication_date":"2015-09-01","ids":{"openalex":"https://openalex.org/W2276199846","doi":"https://doi.org/10.1134/s1063782615090201","mag":"2276199846"},"language":"en","primary_location":{"id":"doi:10.1134/s1063782615090201","doi":"https://doi.org/10.1134/s1063782615090201","is_oa":false,"landing_page_url":"https://doi.org/10.1134/s1063782615090201","pdf_url":null,"source":{"id":"https://openalex.org/S66392791","display_name":"Semiconductors","issn_l":"1063-7826","issn":["1063-7826","1090-6479"],"is_oa":false,"is_in_doaj":false,"is_core":false,"listed_in":["dongbi-d","jufo-1","norway-1","poland-70"],"host_organization":"https://openalex.org/P4310320267","host_organization_name":"Pleiades Publishing","host_organization_lineage":["https://openalex.org/P4310320267","https://openalex.org/P4310319965"],"host_organization_lineage_names":["Pleiades Publishing","Springer Nature"],"type":"journal"},"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"Semiconductors","raw_type":"journal-article"},"volume":null,"type":"article","is_traditional":true,"indexed_in":["crossref"],"open_access":{"is_oa":false,"oa_status":"closed","oa_url":null,"any_repository_has_fulltext":false},"authorships":[{"author_position":"first","author":{"id":"https://openalex.org/A5072955067","display_name":"V. V. Manukhov","orcid":null,"observed_orcids":[]},"institutions":[{"id":"https://openalex.org/I172901346","display_name":"St Petersburg University","ror":"https://ror.org/023znxa73","country_code":"RU","type":"education","lineage":["https://openalex.org/I172901346"]}],"countries":["RU"],"is_corresponding":false,"raw_author_name":"V. V. Manukhov","raw_affiliation_strings":["Saint Petersburg State University, Universitetskaya nab. 7/9, St. Petersburg, 199034, Russia"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Saint Petersburg State University, Universitetskaya nab. 7/9, St. Petersburg, 199034, Russia","institution_ids":["https://openalex.org/I172901346"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5000915947","display_name":"\u0424\u0435\u0434\u043e\u0440\u0446\u043e\u0432 \u0410\u043b\u0435\u043a\u0441\u0430\u043d\u0434\u0440 \u0411\u043e\u0440\u0438\u0441\u043e\u0432\u0438\u0447","orcid":"https://orcid.org/0000-0002-4900-3478","observed_orcids":["https://orcid.org/0000-0002-4900-3478"]},"institutions":[{"id":"https://openalex.org/I3018660459","display_name":"Saint Petersburg Mining University","ror":"https://ror.org/01ma17032","country_code":"RU","type":"education","lineage":["https://openalex.org/I3018660459"]}],"countries":["RU"],"is_corresponding":false,"raw_author_name":"A. B. Fedortsov","raw_affiliation_strings":["Saint Petersburg Mining University, Vasil\u2019evskii Ostrov, 21-ya liniya 2, St. Petersburg, 199106, Russia"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Saint Petersburg Mining University, Vasil\u2019evskii Ostrov, 21-ya liniya 2, St. Petersburg, 199106, Russia","institution_ids":["https://openalex.org/I3018660459"]}]},{"author_position":"last","author":{"id":"https://openalex.org/A5002440131","display_name":"A. S. Ivanov","orcid":"https://orcid.org/0000-0001-6627-4889","observed_orcids":["https://orcid.org/0000-0001-6627-4889"]},"institutions":[{"id":"https://openalex.org/I3018660459","display_name":"Saint Petersburg Mining University","ror":"https://ror.org/01ma17032","country_code":"RU","type":"education","lineage":["https://openalex.org/I3018660459"]}],"countries":["RU"],"is_corresponding":true,"raw_author_name":"A. S. Ivanov","raw_affiliation_strings":["Saint Petersburg Mining University, Vasil\u2019evskii Ostrov, 21-ya liniya 2, St. Petersburg, 199106, Russia"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Saint Petersburg Mining University, Vasil\u2019evskii Ostrov, 21-ya liniya 2, St. Petersburg, 199106, Russia","institution_ids":["https://openalex.org/I3018660459"]}]}],"institutions":[],"countries_distinct_count":1,"institutions_distinct_count":2,"corresponding_author_ids":["https://openalex.org/A5002440131"],"corresponding_institution_ids":["https://openalex.org/I3018660459"],"apc_list":null,"apc_paid":null,"fwci":0.0,"has_fulltext":false,"cited_by_count":1,"citation_normalized_percentile":{"value":0.09902839,"is_in_top_1_percent":false,"is_in_top_10_percent":false},"cited_by_percentile_year":{"min":88,"max":93},"biblio":{"volume":"49","issue":"9","first_page":"1119","last_page":"1124"},"is_retracted":false,"is_paratext":false,"is_xpac":false,"primary_topic":{"id":"https://openalex.org/T11853","display_name":"Semiconductor materials and interfaces","score":0.29760000109672546,"subfield":{"id":"https://openalex.org/subfields/2504","display_name":"Electronic, Optical and Magnetic Materials"},"field":{"id":"https://openalex.org/fields/25","display_name":"Materials Science"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},"topics":[{"id":"https://openalex.org/T11853","display_name":"Semiconductor materials and interfaces","score":0.29760000109672546,"subfield":{"id":"https://openalex.org/subfields/2504","display_name":"Electronic, Optical and Magnetic Materials"},"field":{"id":"https://openalex.org/fields/25","display_name":"Materials Science"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T11429","display_name":"Semiconductor Lasers and Optical Devices","score":0.23499999940395355,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T11050","display_name":"Photorefractive and Nonlinear Optics","score":0.052799999713897705,"subfield":{"id":"https://openalex.org/subfields/3107","display_name":"Atomic and Molecular Physics, and Optics"},"field":{"id":"https://openalex.org/fields/31","display_name":"Physics and Astronomy"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}}],"keywords":[{"id":"https://openalex.org/keywords/charge-carrier-diffusion-length","display_name":"carrier diffusion length","score":0.9980000257492065},{"id":"https://openalex.org/keywords/laser-interferometry","display_name":"laser interferometry","score":0.847000002861023},{"id":"https://openalex.org/keywords/charge-carrier-generation","display_name":"carrier generation","score":0.6639999747276306},{"id":"https://openalex.org/keywords/optical-constants","display_name":"optical constants","score":0.7929999828338623},{"id":"https://openalex.org/keywords/carrier-concentration","display_name":"carrier concentration","score":0.6110000014305115},{"id":"https://openalex.org/keywords/beam-divergence","display_name":"beam divergence","score":0.6769999861717224},{"id":"https://openalex.org/keywords/surface-states","display_name":"surface states","score":0.8320000171661377}],"concepts":[{"id":"https://openalex.org/C108225325","wikidata":"https://www.wikidata.org/wiki/Q11456","display_name":"Semiconductor","level":2,"score":0.7923941612243652},{"id":"https://openalex.org/C520434653","wikidata":"https://www.wikidata.org/wiki/Q38867","display_name":"Laser","level":2,"score":0.7039197087287903},{"id":"https://openalex.org/C69357855","wikidata":"https://www.wikidata.org/wiki/Q163214","display_name":"Diffusion","level":2,"score":0.6874351501464844},{"id":"https://openalex.org/C120665830","wikidata":"https://www.wikidata.org/wiki/Q14620","display_name":"Optics","level":1,"score":0.588927686214447},{"id":"https://openalex.org/C192562407","wikidata":"https://www.wikidata.org/wiki/Q228736","display_name":"Materials science","level":0,"score":0.5822678804397583},{"id":"https://openalex.org/C166689943","wikidata":"https://www.wikidata.org/wiki/Q850283","display_name":"Interferometry","level":2,"score":0.5573943257331848},{"id":"https://openalex.org/C121477167","wikidata":"https://www.wikidata.org/wiki/Q17154002","display_name":"Semiconductor laser theory","level":3,"score":0.5362239480018616},{"id":"https://openalex.org/C198865614","wikidata":"https://www.wikidata.org/wiki/Q5046374","display_name":"Carrier lifetime","level":3,"score":0.5075629949569702},{"id":"https://openalex.org/C32022120","wikidata":"https://www.wikidata.org/wiki/Q797225","display_name":"Interference (communication)","level":3,"score":0.5021371841430664},{"id":"https://openalex.org/C153385146","wikidata":"https://www.wikidata.org/wiki/Q18335","display_name":"Radiation","level":2,"score":0.4851883053779602},{"id":"https://openalex.org/C49040817","wikidata":"https://www.wikidata.org/wiki/Q193091","display_name":"Optoelectronics","level":1,"score":0.480338454246521},{"id":"https://openalex.org/C125287762","wikidata":"https://www.wikidata.org/wiki/Q1758948","display_name":"Absorption (acoustics)","level":2,"score":0.41373759508132935},{"id":"https://openalex.org/C121332964","wikidata":"https://www.wikidata.org/wiki/Q413","display_name":"Physics","level":0,"score":0.21468192338943481},{"id":"https://openalex.org/C544956773","wikidata":"https://www.wikidata.org/wiki/Q670","display_name":"Silicon","level":2,"score":0.08250725269317627},{"id":"https://openalex.org/C127162648","wikidata":"https://www.wikidata.org/wiki/Q16858953","display_name":"Channel (broadcasting)","level":2,"score":0.0},{"id":"https://openalex.org/C127413603","wikidata":"https://www.wikidata.org/wiki/Q11023","display_name":"Engineering","level":0,"score":0.0},{"id":"https://openalex.org/C119599485","wikidata":"https://www.wikidata.org/wiki/Q43035","display_name":"Electrical engineering","level":1,"score":0.0},{"id":"https://openalex.org/C97355855","wikidata":"https://www.wikidata.org/wiki/Q11473","display_name":"Thermodynamics","level":1,"score":0.0}],"mesh":[],"locations_count":1,"locations":[{"id":"doi:10.1134/s1063782615090201","doi":"https://doi.org/10.1134/s1063782615090201","is_oa":false,"landing_page_url":"https://doi.org/10.1134/s1063782615090201","pdf_url":null,"source":{"id":"https://openalex.org/S66392791","display_name":"Semiconductors","issn_l":"1063-7826","issn":["1063-7826","1090-6479"],"is_oa":false,"is_in_doaj":false,"is_core":false,"listed_in":["dongbi-d","jufo-1","norway-1","poland-70"],"host_organization":"https://openalex.org/P4310320267","host_organization_name":"Pleiades Publishing","host_organization_lineage":["https://openalex.org/P4310320267","https://openalex.org/P4310319965"],"host_organization_lineage_names":["Pleiades Publishing","Springer Nature"],"type":"journal"},"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"Semiconductors","raw_type":"journal-article"}],"best_oa_location":null,"sustainable_development_goals":[],"study_designs":[],"awards":[],"funders":[],"has_content":{"pdf":false,"grobid_xml":false},"content_urls":null,"referenced_works_count":3,"referenced_works":["https://openalex.org/W2042913909","https://openalex.org/W2097370400","https://openalex.org/W2318167107"],"related_works":["https://openalex.org/W2606357921","https://openalex.org/W1996893258","https://openalex.org/W1986825680","https://openalex.org/W2908575580","https://openalex.org/W2020994331","https://openalex.org/W1994283972","https://openalex.org/W2013538246","https://openalex.org/W2068317935","https://openalex.org/W1974521140","https://openalex.org/W2466410874"],"abstract_inverted_index":{"A":[0],"new":[1],"laser":[2,25],"interferometric":[3],"method":[4,16,107],"for":[5],"measuring":[6],"the":[7,20,43,50,55,59,70,76,88,94,98,101,128],"carrier":[8,62,71],"diffusion":[9,77,82],"length":[10,83],"in":[11,27,35,42,69,124],"semiconductors":[12],"is":[13,17,79,84,108],"proposed.":[14],"The":[15,81,106],"based":[18],"on":[19,75,97,111],"interference\u2013absorption":[21],"interaction":[22],"of":[23,49,93,100],"two":[24],"radiations":[26],"a":[28,36,40,67],"semiconductor.":[29],"Injected":[30],"radiation":[31,52],"generates":[32],"additional":[33],"carriers":[34],"semiconductor,":[37],"which":[38,73],"causes":[39],"change":[41],"material\u2019s":[44],"optical":[45],"constants":[46],"and":[47,64,90,103,117,120,127],"modulation":[48],"probing":[51,65],"passed":[53],"through":[54],"sample.":[56],"When":[57],"changing":[58],"distance":[60],"between":[61],"generation":[63],"points,":[66],"decrease":[68],"concentration,":[72],"depends":[74],"length,":[78],"recorded.":[80],"determined":[85],"by":[86],"comparing":[87],"experimental":[89],"theoretical":[91],"dependences":[92],"probe":[95,104],"signal":[96],"divergence":[99],"injector":[102],"beams.":[105],"successfully":[109],"tested":[110],"semiconductor":[112],"samples":[113],"with":[114],"different":[115],"thicknesses":[116],"surface":[118],"states":[119],"can":[121],"be":[122],"used":[123],"scientific":[125],"research":[126],"electronics":[129],"industry.":[130]},"counts_by_year":[{"year":2019,"cited_by_count":1}],"updated_date":"2026-10-14T16:39:01.820549","created_date":"2016-06-24T00:00:00"}