{"id":"https://openalex.org/W2269833249","doi":"https://doi.org/10.1111/jace.14138","title":"Properties of Phosphorus\u2010Doped Silicon\u2010Rich Amorphous Silicon Carbide Film Prepared by a Solution Process","display_name":"Properties of Phosphorus\u2010Doped Silicon\u2010Rich Amorphous Silicon Carbide Film Prepared by a Solution Process","publication_year":2016,"publication_date":"2016-02-10","ids":{"openalex":"https://openalex.org/W2269833249","doi":"https://doi.org/10.1111/jace.14138","mag":"2269833249"},"language":"en","primary_location":{"id":"doi:10.1111/jace.14138","doi":"https://doi.org/10.1111/jace.14138","is_oa":false,"landing_page_url":"https://doi.org/10.1111/jace.14138","pdf_url":null,"source":{"id":"https://openalex.org/S53162366","display_name":"Journal of the American Ceramic Society","issn_l":"0002-7820","issn":["0002-7820","1551-2916"],"is_oa":false,"is_in_doaj":false,"is_core":true,"listed_in":["cwts-core","dongbi-b","jufo-2","norway-2","poland-100","russia-white-list-1","vabb-shw"],"host_organization":"https://openalex.org/P4310320595","host_organization_name":"Wiley","host_organization_lineage":["https://openalex.org/P4310320595"],"host_organization_lineage_names":["Wiley"],"type":"journal"},"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"Journal of the American Ceramic Society","raw_type":"journal-article"},"volume":null,"type":"article","is_traditional":true,"indexed_in":["crossref"],"open_access":{"is_oa":false,"oa_status":"closed","oa_url":null,"any_repository_has_fulltext":false},"authorships":[{"author_position":"first","author":{"id":"https://openalex.org/A5042762412","display_name":"Takashi Masuda","orcid":"https://orcid.org/0000-0002-4128-0024","observed_orcids":["https://orcid.org/0000-0002-4128-0024"]},"institutions":[{"id":"https://openalex.org/I177738480","display_name":"Japan Advanced Institute of Science and Technology","ror":"https://ror.org/03frj4r98","country_code":"JP","type":"education","lineage":["https://openalex.org/I177738480"]}],"countries":["JP"],"is_corresponding":true,"raw_author_name":"Takashi Masuda","raw_affiliation_strings":["School of Material and Science, Japan Advanced Institute of Science and Technology, 1-1 Asahidai, Nomi, Ishikawa, 923-1292 Japan"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"School of Material and Science, Japan Advanced Institute of Science and Technology, 1-1 Asahidai, Nomi, Ishikawa, 923-1292 Japan","institution_ids":["https://openalex.org/I177738480"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5059720366","display_name":"Akira Iwasaka","orcid":null,"observed_orcids":[]},"institutions":[{"id":"https://openalex.org/I177738480","display_name":"Japan Advanced Institute of Science and Technology","ror":"https://ror.org/03frj4r98","country_code":"JP","type":"education","lineage":["https://openalex.org/I177738480"]}],"countries":["JP"],"is_corresponding":false,"raw_author_name":"Akira Iwasaka","raw_affiliation_strings":["School of Material and Science, Japan Advanced Institute of Science and Technology, 1-1 Asahidai, Nomi, Ishikawa, 923-1292 Japan"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"School of Material and Science, Japan Advanced Institute of Science and Technology, 1-1 Asahidai, Nomi, Ishikawa, 923-1292 Japan","institution_ids":["https://openalex.org/I177738480"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5084680347","display_name":"Hideyuki Takagishi","orcid":"https://orcid.org/0000-0003-2609-5549","observed_orcids":["https://orcid.org/0000-0003-2609-5549"]},"institutions":[{"id":"https://openalex.org/I58089638","display_name":"Fukushima University","ror":"https://ror.org/03zjb7z20","country_code":"JP","type":"education","lineage":["https://openalex.org/I58089638"]}],"countries":["JP"],"is_corresponding":false,"raw_author_name":"Hideyuki Takagishi","raw_affiliation_strings":["Faculty of Symbiotic System Science, Fukushima University, 1 Kanayagawa, Fukushima-shi, Fukushima, 960-1296 Japan"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Faculty of Symbiotic System Science, Fukushima University, 1 Kanayagawa, Fukushima-shi, Fukushima, 960-1296 Japan","institution_ids":["https://openalex.org/I58089638"]}]},{"author_position":"last","author":{"id":"https://openalex.org/A5108742071","display_name":"Tatsuya Shimoda","orcid":null,"observed_orcids":[]},"institutions":[{"id":"https://openalex.org/I177738480","display_name":"Japan Advanced Institute of Science and Technology","ror":"https://ror.org/03frj4r98","country_code":"JP","type":"education","lineage":["https://openalex.org/I177738480"]}],"countries":["JP"],"is_corresponding":false,"raw_author_name":"Tatsuya Shimoda","raw_affiliation_strings":["School of Material and Science, Japan Advanced Institute of Science and Technology, 1-1 Asahidai, Nomi, Ishikawa, 923-1292 Japan"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"School of Material and Science, Japan Advanced Institute of Science and Technology, 1-1 Asahidai, Nomi, Ishikawa, 923-1292 Japan","institution_ids":["https://openalex.org/I177738480"]}]}],"institutions":[],"countries_distinct_count":1,"institutions_distinct_count":2,"corresponding_author_ids":["https://openalex.org/A5042762412"],"corresponding_institution_ids":["https://openalex.org/I177738480"],"apc_list":{"value":4070,"currency":"USD","value_usd":4070},"apc_paid":null,"fwci":0.7848,"has_fulltext":false,"cited_by_count":7,"citation_normalized_percentile":{"value":0.71714082,"is_in_top_1_percent":false,"is_in_top_10_percent":false},"cited_by_percentile_year":{"min":87,"max":97},"biblio":{"volume":"99","issue":"5","first_page":"1651","last_page":"1656"},"is_retracted":false,"is_paratext":false,"is_xpac":false,"primary_topic":{"id":"https://openalex.org/T10361","display_name":"Silicon Carbide Semiconductor Technologies","score":0.6298999786376953,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},"topics":[{"id":"https://openalex.org/T10361","display_name":"Silicon Carbide Semiconductor Technologies","score":0.6298999786376953,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T10623","display_name":"Thin-Film Transistor Technologies","score":0.21619999408721924,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T11169","display_name":"Silicon Nanostructures and Photoluminescence","score":0.04769999906420708,"subfield":{"id":"https://openalex.org/subfields/2505","display_name":"Materials Chemistry"},"field":{"id":"https://openalex.org/fields/25","display_name":"Materials Science"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}}],"keywords":[{"id":"https://openalex.org/keywords/amorphous-silicon-carbide","display_name":"amorphous silicon carbide","score":0.9079999923706055},{"id":"https://openalex.org/keywords/phosphorus-doping","display_name":"phosphorus doping","score":0.9850000143051147},{"id":"https://openalex.org/keywords/white-phosphorus","display_name":"white phosphorus","score":0.8849999904632568},{"id":"https://openalex.org/keywords/polymer-precursors","display_name":"polymer precursors","score":0.6919999718666077},{"id":"https://openalex.org/keywords/cyclopentasilane","display_name":"cyclopentasilane","score":0.9240000247955322},{"id":"https://openalex.org/keywords/1-hexyne","display_name":"1-hexyne","score":0.9890000224113464},{"id":"https://openalex.org/keywords/chemical-solution-deposition","display_name":"chemical solution deposition","score":0.7279999852180481},{"id":"https://openalex.org/keywords/compensation-effect","display_name":"compensation effect","score":0.875},{"id":"https://openalex.org/keywords/thermally-activated-conduction","display_name":"thermally activated conduction","score":0.7950000166893005},{"id":"https://openalex.org/keywords/optical-band-gap","display_name":"optical band gap","score":0.8989999890327454},{"id":"https://openalex.org/keywords/dark-conductivity","display_name":"dark conductivity","score":0.8259999752044678},{"id":"https://openalex.org/keywords/carbon-content","display_name":"carbon content","score":0.5120000243186951},{"id":"https://openalex.org/keywords/electrical-properties","display_name":"electrical properties","score":0.4699999988079071},{"id":"https://openalex.org/keywords/optical-properties","display_name":"optical properties","score":0.6899999976158142}],"concepts":[{"id":"https://openalex.org/C192562407","wikidata":"https://www.wikidata.org/wiki/Q228736","display_name":"Materials science","level":0,"score":0.7681711912155151},{"id":"https://openalex.org/C57863236","wikidata":"https://www.wikidata.org/wiki/Q1130571","display_name":"Doping","level":2,"score":0.7023631930351257},{"id":"https://openalex.org/C2776390347","wikidata":"https://www.wikidata.org/wiki/Q474163","display_name":"Amorphous silicon","level":4,"score":0.6406584978103638},{"id":"https://openalex.org/C544956773","wikidata":"https://www.wikidata.org/wiki/Q670","display_name":"Silicon","level":2,"score":0.5991615653038025},{"id":"https://openalex.org/C56052488","wikidata":"https://www.wikidata.org/wiki/Q103382","display_name":"Amorphous solid","level":2,"score":0.5956829786300659},{"id":"https://openalex.org/C2780722187","wikidata":"https://www.wikidata.org/wiki/Q412356","display_name":"Silicon carbide","level":2,"score":0.5795958042144775},{"id":"https://openalex.org/C42360764","wikidata":"https://www.wikidata.org/wiki/Q83588","display_name":"Chemical engineering","level":1,"score":0.5784753561019897},{"id":"https://openalex.org/C510538283","wikidata":"https://www.wikidata.org/wiki/Q674","display_name":"Phosphorus","level":2,"score":0.5093570947647095},{"id":"https://openalex.org/C5335593","wikidata":"https://www.wikidata.org/wiki/Q241906","display_name":"Carbide","level":2,"score":0.4723461866378784},{"id":"https://openalex.org/C131540310","wikidata":"https://www.wikidata.org/wiki/Q907564","display_name":"Conductivity","level":2,"score":0.4474697411060333},{"id":"https://openalex.org/C2777716191","wikidata":"https://www.wikidata.org/wiki/Q207877","display_name":"Phosphine","level":3,"score":0.4258519113063812},{"id":"https://openalex.org/C179104552","wikidata":"https://www.wikidata.org/wiki/Q11165","display_name":"Inorganic chemistry","level":1,"score":0.35849320888519287},{"id":"https://openalex.org/C161790260","wikidata":"https://www.wikidata.org/wiki/Q82264","display_name":"Catalysis","level":2,"score":0.2994738221168518},{"id":"https://openalex.org/C159985019","wikidata":"https://www.wikidata.org/wiki/Q181790","display_name":"Composite material","level":1,"score":0.2168167531490326},{"id":"https://openalex.org/C49040817","wikidata":"https://www.wikidata.org/wiki/Q193091","display_name":"Optoelectronics","level":1,"score":0.21042954921722412},{"id":"https://openalex.org/C191897082","wikidata":"https://www.wikidata.org/wiki/Q11467","display_name":"Metallurgy","level":1,"score":0.19075936079025269},{"id":"https://openalex.org/C2779667780","wikidata":"https://www.wikidata.org/wiki/Q18206302","display_name":"Crystalline silicon","level":3,"score":0.17533499002456665},{"id":"https://openalex.org/C178790620","wikidata":"https://www.wikidata.org/wiki/Q11351","display_name":"Organic chemistry","level":1,"score":0.12227711081504822},{"id":"https://openalex.org/C147789679","wikidata":"https://www.wikidata.org/wiki/Q11372","display_name":"Physical chemistry","level":1,"score":0.12004917860031128},{"id":"https://openalex.org/C185592680","wikidata":"https://www.wikidata.org/wiki/Q2329","display_name":"Chemistry","level":0,"score":0.11243021488189697},{"id":"https://openalex.org/C127413603","wikidata":"https://www.wikidata.org/wiki/Q11023","display_name":"Engineering","level":0,"score":0.0}],"mesh":[],"locations_count":1,"locations":[{"id":"doi:10.1111/jace.14138","doi":"https://doi.org/10.1111/jace.14138","is_oa":false,"landing_page_url":"https://doi.org/10.1111/jace.14138","pdf_url":null,"source":{"id":"https://openalex.org/S53162366","display_name":"Journal of the American Ceramic Society","issn_l":"0002-7820","issn":["0002-7820","1551-2916"],"is_oa":false,"is_in_doaj":false,"is_core":true,"listed_in":["cwts-core","dongbi-b","jufo-2","norway-2","poland-100","russia-white-list-1","vabb-shw"],"host_organization":"https://openalex.org/P4310320595","host_organization_name":"Wiley","host_organization_lineage":["https://openalex.org/P4310320595"],"host_organization_lineage_names":["Wiley"],"type":"journal"},"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"Journal of the American Ceramic Society","raw_type":"journal-article"}],"best_oa_location":null,"sustainable_development_goals":[],"study_designs":[],"awards":[],"funders":[{"id":"https://openalex.org/F4320308824","display_name":"Izumi Foundation","ror":"https://ror.org/04n11b617"},{"id":"https://openalex.org/F4320326736","display_name":"Izumi Science and Technology Foundation","ror":"https://ror.org/05cjrrq55"}],"has_content":{"grobid_xml":false,"pdf":false},"content_urls":null,"referenced_works_count":40,"referenced_works":["https://openalex.org/W118837172","https://openalex.org/W1646785497","https://openalex.org/W1917355783","https://openalex.org/W1973801214","https://openalex.org/W1980075157","https://openalex.org/W1989756362","https://openalex.org/W2000823189","https://openalex.org/W2001809518","https://openalex.org/W2003038623","https://openalex.org/W2005442885","https://openalex.org/W2012057399","https://openalex.org/W2012115068","https://openalex.org/W2012138533","https://openalex.org/W2021306996","https://openalex.org/W2021852794","https://openalex.org/W2030444924","https://openalex.org/W2036384877","https://openalex.org/W2037190082","https://openalex.org/W2038590483","https://openalex.org/W2040875144","https://openalex.org/W2041695115","https://openalex.org/W2045087066","https://openalex.org/W2046212455","https://openalex.org/W2047960425","https://openalex.org/W2060703439","https://openalex.org/W2063646649","https://openalex.org/W2066760180","https://openalex.org/W2069541305","https://openalex.org/W2071697486","https://openalex.org/W2076924269","https://openalex.org/W2091681409","https://openalex.org/W2098512196","https://openalex.org/W2161960040","https://openalex.org/W2316335231","https://openalex.org/W2318242557","https://openalex.org/W2331201361","https://openalex.org/W2487700061","https://openalex.org/W2498398404","https://openalex.org/W3048513532","https://openalex.org/W4285719527"],"related_works":["https://openalex.org/W2417553199","https://openalex.org/W2396505757","https://openalex.org/W1995852954","https://openalex.org/W4398775384","https://openalex.org/W2320849302","https://openalex.org/W1917355783","https://openalex.org/W1998351181","https://openalex.org/W2411507692","https://openalex.org/W1984505747","https://openalex.org/W1990578119"],"abstract_inverted_index":{"Using":[0],"a":[1,6,24,63,101],"polymeric":[2,29,45],"precursor":[3,46],"synthesized":[4],"from":[5],"mixture":[7],"of":[8,62,66,69,81,104,129],"cyclopentasilane,":[9],"white":[10],"phosphorus,":[11],"and":[12,41,53,71,78,100,107],"1\u2010hexyne,":[13],"we":[14],"deposited":[15],"phosphorus\u2010doped":[16],"silicon\u2010rich":[17],"amorphous":[18],"silicon":[19],"carbide":[20],"(a\u2010SiC)":[21],"films":[22,90,115,133],"via":[23],"solution\u2010based":[25],"process.":[26],"Unlike":[27],"conventional":[28],"precursors,":[30],"this":[31],"polymer":[32],"requires":[33],"neither":[34],"catalysts":[35],"nor":[36],"oxidation":[37],"for":[38,50,88,120],"its":[39],"synthesis":[40],"cross\u2010linkage.":[42],"Therefore,":[43],"the":[44,60,67,75,117,135],"is":[47,91],"sufficiently":[48],"pure":[49],"effective":[51],"doping":[52,128],"fabricating":[54],"semiconducting":[55],"a\u2010SiC.":[56,141],"This":[57],"study":[58,65],"presents":[59],"results":[61],"detailed":[64],"effect":[68],"carbon":[70],"phosphorus":[72],"concentrations":[73],"on":[74],"structural,":[76],"optical,":[77],"electrical":[79],"properties":[80],"a\u2010SiC":[82,131],"films.":[83],"The":[84],"lowest":[85],"activation":[86],"energy":[87],"these":[89,114],"0.39":[92],"eV,":[93],"which":[94,124],"leads":[95],"to":[96],"an":[97],"optical":[98],"gap":[99],"dark":[102],"conductivity":[103],"2.1":[105],"eV":[106],"10":[108],"9":[109],"\u03a9":[110],"cm,":[111],"respectively.":[112],"Moreover,":[113],"satisfy":[116],"Meyer\u2013Neldel":[118],"rule":[119],"thermally":[121],"activated":[122],"conductivity,":[123],"indicates":[125],"that":[126],"white\u2010phosphorus":[127],"solution\u2010processed":[130],"produces":[132],"with":[134],"same":[136],"characteristics":[137],"as":[138],"phosphine\u2010doped":[139],"vacuum\u2010processed":[140]},"counts_by_year":[{"year":2021,"cited_by_count":1},{"year":2019,"cited_by_count":1},{"year":2017,"cited_by_count":3},{"year":2016,"cited_by_count":2}],"updated_date":"2026-10-30T12:39:25.321706","created_date":"2016-06-24T00:00:00"}