{"id":"https://openalex.org/W2256807311","doi":"https://doi.org/10.1088/1674-4926/33/11/113004","title":"Preparation of rare-earth element doped Mg2Si by FAPAS","display_name":"Preparation of rare-earth element doped Mg2Si by FAPAS","publication_year":2012,"publication_date":"2012-11-01","ids":{"openalex":"https://openalex.org/W2256807311","doi":"https://doi.org/10.1088/1674-4926/33/11/113004","mag":"2256807311"},"language":"en","primary_location":{"id":"doi:10.1088/1674-4926/33/11/113004","doi":"https://doi.org/10.1088/1674-4926/33/11/113004","is_oa":true,"landing_page_url":"https://doi.org/10.1088/1674-4926/33/11/113004","pdf_url":"https://iopscience.iop.org/article/10.1088/1674-4926/33/11/113004/pdf","source":{"id":"https://openalex.org/S52834336","display_name":"Journal of Semiconductors","issn_l":"1674-4926","issn":["1674-4926","2058-6140"],"is_oa":false,"is_in_doaj":false,"is_core":true,"listed_in":["cwts-core","dongbi-b","jufo-1","poland-40","russia-white-list-2"],"host_organization":"https://openalex.org/P4310320083","host_organization_name":"IOP Publishing","host_organization_lineage":["https://openalex.org/P4310320083","https://openalex.org/P4310311669"],"host_organization_lineage_names":["IOP Publishing","Institute of Physics"],"type":"journal"},"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"Journal of Semiconductors","raw_type":"journal-article"},"volume":null,"type":"article","is_traditional":true,"indexed_in":["crossref"],"open_access":{"is_oa":true,"oa_status":"bronze","oa_url":"https://iopscience.iop.org/article/10.1088/1674-4926/33/11/113004/pdf","any_repository_has_fulltext":false},"authorships":[{"author_position":"first","author":{"id":"https://openalex.org/A5000336475","display_name":"Liqi Wang","orcid":"https://orcid.org/0000-0002-6663-735X","observed_orcids":["https://orcid.org/0000-0002-6663-735X"]},"institutions":[{"id":"https://openalex.org/I4405281897","display_name":"Anhui Vocational College of Defense Technology","ror":"https://ror.org/051p7rz95","country_code":"CN","type":"education","lineage":["https://openalex.org/I4405281897"]}],"countries":["CN"],"is_corresponding":false,"raw_author_name":"Liqi Wang","raw_affiliation_strings":["Department of Mechanical Engineering, Anhui Vocational College of Defense Technology, Lu'an 237011, China"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Department of Mechanical Engineering, Anhui Vocational College of Defense Technology, Lu'an 237011, China","institution_ids":["https://openalex.org/I4405281897"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5100827928","display_name":"Qingsen Meng","orcid":null,"observed_orcids":[]},"institutions":[{"id":"https://openalex.org/I9086337","display_name":"Taiyuan University of Technology","ror":"https://ror.org/03kv08d37","country_code":"CN","type":"education","lineage":["https://openalex.org/I9086337"]}],"countries":["CN"],"is_corresponding":false,"raw_author_name":"Qingsen Meng","raw_affiliation_strings":["Department of Material Science and Engineering , Taiyuan University of Technology , Taiyuan 030024 , China"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Department of Material Science and Engineering , Taiyuan University of Technology , Taiyuan 030024 , China","institution_ids":["https://openalex.org/I9086337"]}]},{"author_position":"last","author":{"id":"https://openalex.org/A5024639628","display_name":"Wenhao Fan","orcid":"https://orcid.org/0000-0003-1960-0842","observed_orcids":["https://orcid.org/0000-0003-1960-0842"]},"institutions":[{"id":"https://openalex.org/I9086337","display_name":"Taiyuan University of Technology","ror":"https://ror.org/03kv08d37","country_code":"CN","type":"education","lineage":["https://openalex.org/I9086337"]}],"countries":["CN"],"is_corresponding":false,"raw_author_name":"Wenhao Fan","raw_affiliation_strings":["Department of Material Science and Engineering , Taiyuan University of Technology , Taiyuan 030024 , China"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Department of Material Science and Engineering , Taiyuan University of Technology , Taiyuan 030024 , China","institution_ids":["https://openalex.org/I9086337"]}]}],"institutions":[],"countries_distinct_count":1,"institutions_distinct_count":2,"corresponding_author_ids":[],"corresponding_institution_ids":[],"apc_list":{"value":2450,"currency":"USD","value_usd":2450},"apc_paid":null,"fwci":0.1304,"has_fulltext":true,"cited_by_count":3,"citation_normalized_percentile":{"value":0.38363891,"is_in_top_1_percent":false,"is_in_top_10_percent":false},"cited_by_percentile_year":{"min":87,"max":93},"biblio":{"volume":"33","issue":"11","first_page":"113004","last_page":"113004"},"is_retracted":false,"is_paratext":false,"is_xpac":false,"primary_topic":{"id":"https://openalex.org/T10440","display_name":"Advanced Thermoelectric Materials and Devices","score":1.0,"subfield":{"id":"https://openalex.org/subfields/2505","display_name":"Materials Chemistry"},"field":{"id":"https://openalex.org/fields/25","display_name":"Materials Science"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},"topics":[{"id":"https://openalex.org/T10440","display_name":"Advanced Thermoelectric Materials and Devices","score":1.0,"subfield":{"id":"https://openalex.org/subfields/2505","display_name":"Materials Chemistry"},"field":{"id":"https://openalex.org/fields/25","display_name":"Materials Science"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T13251","display_name":"Electrical and Thermal Properties of Materials","score":0.0,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T11277","display_name":"Thermal properties of materials","score":0.0,"subfield":{"id":"https://openalex.org/subfields/2505","display_name":"Materials Chemistry"},"field":{"id":"https://openalex.org/fields/25","display_name":"Materials Science"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}}],"keywords":[{"id":"https://openalex.org/keywords/mg2si","display_name":"Mg2Si","score":0.925000011920929},{"id":"https://openalex.org/keywords/rare-earth-doping","display_name":"rare-earth doping","score":0.7710000276565552},{"id":"https://openalex.org/keywords/scandium-doping","display_name":"scandium doping","score":0.9589999914169312},{"id":"https://openalex.org/keywords/yttrium-doping","display_name":"yttrium doping","score":0.9990000128746033},{"id":"https://openalex.org/keywords/thermoelectric-materials","display_name":"thermoelectric materials","score":0.8740000128746033},{"id":"https://openalex.org/keywords/seebeck-coefficient","display_name":"Seebeck coefficient","score":0.9490000009536743},{"id":"https://openalex.org/keywords/electrical-conductivity","display_name":"electrical conductivity","score":0.9459999799728394},{"id":"https://openalex.org/keywords/thermal-conductivity","display_name":"thermal conductivity","score":0.9879999756813049},{"id":"https://openalex.org/keywords/figure-of-merit","display_name":"figure of merit","score":0.8730000257492065},{"id":"https://openalex.org/keywords/thermoelectric-figure-of-merit","display_name":"figure of merit ZT","score":0.6980000138282776}],"concepts":[{"id":"https://openalex.org/C2777615417","wikidata":"https://www.wikidata.org/wiki/Q190444","display_name":"Rare-earth element","level":3,"score":0.7620557546615601},{"id":"https://openalex.org/C2983155866","wikidata":"https://www.wikidata.org/wiki/Q7294540","display_name":"Rare earth","level":2,"score":0.7253325581550598},{"id":"https://openalex.org/C57863236","wikidata":"https://www.wikidata.org/wiki/Q1130571","display_name":"Doping","level":2,"score":0.6525448560714722},{"id":"https://openalex.org/C192562407","wikidata":"https://www.wikidata.org/wiki/Q228736","display_name":"Materials science","level":0,"score":0.5099018812179565},{"id":"https://openalex.org/C200288055","wikidata":"https://www.wikidata.org/wiki/Q2621792","display_name":"Element (criminal law)","level":2,"score":0.4245613217353821},{"id":"https://openalex.org/C191897082","wikidata":"https://www.wikidata.org/wiki/Q11467","display_name":"Metallurgy","level":1,"score":0.22786962985992432},{"id":"https://openalex.org/C17744445","wikidata":"https://www.wikidata.org/wiki/Q36442","display_name":"Political science","level":0,"score":0.13733991980552673},{"id":"https://openalex.org/C49040817","wikidata":"https://www.wikidata.org/wiki/Q193091","display_name":"Optoelectronics","level":1,"score":0.11850050091743469},{"id":"https://openalex.org/C199539241","wikidata":"https://www.wikidata.org/wiki/Q7748","display_name":"Law","level":1,"score":0.0}],"mesh":[],"locations_count":2,"locations":[{"id":"doi:10.1088/1674-4926/33/11/113004","doi":"https://doi.org/10.1088/1674-4926/33/11/113004","is_oa":true,"landing_page_url":"https://doi.org/10.1088/1674-4926/33/11/113004","pdf_url":"https://iopscience.iop.org/article/10.1088/1674-4926/33/11/113004/pdf","source":{"id":"https://openalex.org/S52834336","display_name":"Journal of Semiconductors","issn_l":"1674-4926","issn":["1674-4926","2058-6140"],"is_oa":false,"is_in_doaj":false,"is_core":true,"listed_in":["cwts-core","dongbi-b","jufo-1","poland-40","russia-white-list-2"],"host_organization":"https://openalex.org/P4310320083","host_organization_name":"IOP Publishing","host_organization_lineage":["https://openalex.org/P4310320083","https://openalex.org/P4310311669"],"host_organization_lineage_names":["IOP Publishing","Institute of Physics"],"type":"journal"},"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"Journal of Semiconductors","raw_type":"journal-article"},{"id":"mag:2341713170","doi":null,"is_oa":false,"landing_page_url":"http://www.cqvip.com/QK/94689X/201211/44016272.html","pdf_url":null,"source":{"id":"https://openalex.org/S52834336","display_name":"Journal of Semiconductors","issn_l":"1674-4926","issn":["1674-4926","2058-6140"],"is_oa":false,"is_in_doaj":false,"is_core":true,"listed_in":["cwts-core","dongbi-b","jufo-1","poland-40","russia-white-list-2"],"host_organization":"https://openalex.org/P4310320083","host_organization_name":"IOP Publishing","host_organization_lineage":["https://openalex.org/P4310320083","https://openalex.org/P4310311669"],"host_organization_lineage_names":["IOP Publishing","Institute of Physics"],"type":"journal"},"license":null,"license_id":null,"version":null,"is_accepted":false,"is_published":false,"raw_source_name":"\u534a\u5bfc\u4f53\u5b66\u62a5","raw_type":null}],"best_oa_location":{"id":"doi:10.1088/1674-4926/33/11/113004","doi":"https://doi.org/10.1088/1674-4926/33/11/113004","is_oa":true,"landing_page_url":"https://doi.org/10.1088/1674-4926/33/11/113004","pdf_url":"https://iopscience.iop.org/article/10.1088/1674-4926/33/11/113004/pdf","source":{"id":"https://openalex.org/S52834336","display_name":"Journal of Semiconductors","issn_l":"1674-4926","issn":["1674-4926","2058-6140"],"is_oa":false,"is_in_doaj":false,"is_core":true,"listed_in":["cwts-core","dongbi-b","jufo-1","poland-40","russia-white-list-2"],"host_organization":"https://openalex.org/P4310320083","host_organization_name":"IOP Publishing","host_organization_lineage":["https://openalex.org/P4310320083","https://openalex.org/P4310311669"],"host_organization_lineage_names":["IOP Publishing","Institute of Physics"],"type":"journal"},"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"Journal of Semiconductors","raw_type":"journal-article"},"sustainable_development_goals":[],"study_designs":[],"awards":[{"id":"https://openalex.org/G936320291","display_name":null,"funder_award_id":"50975190","funder_id":"https://openalex.org/F4320321001","funder_display_name":"National Natural Science Foundation of China"}],"funders":[{"id":"https://openalex.org/F4320321001","display_name":"National Natural Science Foundation of China","ror":"https://ror.org/01h0zpd94"},{"id":"https://openalex.org/F4320321884","display_name":"Shanxi Scholarship Council of China","ror":"https://ror.org/04atp4p48"}],"has_content":{"grobid_xml":true,"pdf":true},"content_urls":{"pdf":"https://content.openalex.org/works/W2256807311.pdf","grobid_xml":"https://content.openalex.org/works/W2256807311.grobid-xml"},"referenced_works_count":24,"referenced_works":["https://openalex.org/W1489502353","https://openalex.org/W1536139293","https://openalex.org/W1629887502","https://openalex.org/W1991798121","https://openalex.org/W1993976581","https://openalex.org/W1996446888","https://openalex.org/W2000347280","https://openalex.org/W2003735995","https://openalex.org/W2004572868","https://openalex.org/W2015601653","https://openalex.org/W2023452791","https://openalex.org/W2029538435","https://openalex.org/W2037058145","https://openalex.org/W2043626974","https://openalex.org/W2045254420","https://openalex.org/W2048485853","https://openalex.org/W2062007429","https://openalex.org/W2070252337","https://openalex.org/W2070547140","https://openalex.org/W2083588756","https://openalex.org/W2086332668","https://openalex.org/W2088978855","https://openalex.org/W2090691830","https://openalex.org/W2283673436"],"related_works":["https://openalex.org/W2392236206","https://openalex.org/W2079761906","https://openalex.org/W2088978855","https://openalex.org/W2377458783","https://openalex.org/W2089702984","https://openalex.org/W2354756858","https://openalex.org/W2022222635","https://openalex.org/W2318028990","https://openalex.org/W4413015189","https://openalex.org/W2324261716"],"abstract_inverted_index":{"Rare-earth":[0],"elements":[1],"(Re)":[2],"Sc":[3,64,177,214],"and":[4,17,38,127,141,153,163,199,209],"Y":[5,97,195],"doped":[6,93,173,191,212],"Mg":[7,80,105,133,203],"2":[8,81,106,134,204],"Si":[9,82,107,205],"thermoelectric":[10,220],"materials":[11],"were":[12,147,151],"made":[13],"via":[14],"a":[15,115],"field-activated":[16],"pressure-assisted":[18],"synthesis":[19],"(FAPAS)":[20],"method":[21,35],"at":[22,83,108,160,182,196,206,222],"1023\u20131073":[23],"K,":[24,110,165,185,208],"50":[25],"MPa":[26],"for":[27],"15":[28],"min.":[29],"The":[30,41,59,87,167],"samples":[31,146,159,172,211],"created":[32],"using":[33],"this":[34],"have":[36],"uniform":[37],"compact":[39],"structures.":[40],"average":[42],"grain":[43],"size":[44],"was":[45,123],"about":[46,72,84,183],"1.5\u20132":[47],"\u03bcm,":[48],"the":[49,56,66,91,112,137,157,210,218],"micro-content":[50],"of":[51,75,90,101,103,129,131,139,143,156,189,201],"Re":[52],"did":[53],"not":[54],"change":[55],"matrix":[57],"morphology.":[58],"sample":[60,92,190],"with":[61,94,174,192,213],"2500":[62,175],"ppm":[63,96,176,194],"obtained":[65],"best":[67,219],"See-beck":[68],"coefficient":[69],"absolute":[70],"value,":[71],"1.93":[73],"times":[74,100,155],"that":[76,102,130],"belonging":[77,170],"to":[78,125,171,180,216],"non-doped":[79,132,158,202],"408":[85,161],"K.":[86],"electric":[88],"conductivity":[89,122],"2000":[95,193],"becomes":[98],"1.69":[99],"pure":[104],"468":[109,164],"while":[111],"former":[113],"had":[114],"better":[116],"comprehensive":[117],"electrical":[118],"performance.":[119],"Their":[120],"thermal":[121],"reduced":[124],"70%":[126],"84%":[128],"Si.":[135],"Thus,":[136],"figure":[138],"merit":[140],"ZT":[142,169],"these":[144],"two":[145],"enhanced":[148],"visibly,":[149],"which":[150],"3.3":[152],"2.4":[154],"K":[162,198],"respectively.":[166],"maximal":[168],"went":[178],"up":[179],"0.42":[181],"498":[184],"higher":[186],"than":[187],"0.40":[188],"528":[197],"0.25":[200],"678":[207],"seemed":[215],"get":[217],"performances":[221],"lower":[223],"temperature.":[224]},"counts_by_year":[{"year":2021,"cited_by_count":1},{"year":2019,"cited_by_count":1},{"year":2014,"cited_by_count":1}],"updated_date":"2026-11-04T10:54:05.112534","created_date":"2016-06-24T00:00:00"}