{"id":"https://openalex.org/W2256239689","doi":"https://doi.org/10.7567/ssdm.2011.p-3-3","title":"Investigation of Temperature Dependence on DC and Low-Frequency Noise Characteristics in Uniaxial Tensile Strained nMOSFETs","display_name":"Investigation of Temperature Dependence on DC and Low-Frequency Noise Characteristics in Uniaxial Tensile Strained nMOSFETs","publication_year":2011,"publication_date":"2011-09-29","ids":{"openalex":"https://openalex.org/W2256239689","doi":"https://doi.org/10.7567/ssdm.2011.p-3-3","mag":"2256239689"},"language":"en","primary_location":{"id":"doi:10.7567/ssdm.2011.p-3-3","doi":"https://doi.org/10.7567/ssdm.2011.p-3-3","is_oa":false,"landing_page_url":"https://doi.org/10.7567/ssdm.2011.p-3-3","pdf_url":null,"source":{"id":"https://openalex.org/S4306510274","display_name":"International Conference on Solid State Devices and Materials (SSDM)","issn_l":null,"issn":null,"is_oa":false,"is_in_doaj":false,"is_core":false,"listed_in":[],"host_organization":null,"host_organization_name":null,"host_organization_lineage":[],"host_organization_lineage_names":[],"type":"conference"},"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"Extended Abstracts of the 2011 International Conference on Solid State Devices and Materials","raw_type":"proceedings-article"},"volume":null,"type":"conference-paper","is_traditional":true,"indexed_in":["crossref"],"open_access":{"is_oa":false,"oa_status":"closed","oa_url":null,"any_repository_has_fulltext":false},"authorships":[{"author_position":"first","author":{"id":null,"display_name":"S. C. Tsai","orcid":null,"observed_orcids":[]},"institutions":[],"countries":[],"is_corresponding":false,"raw_author_name":"S. C. Tsai","raw_affiliation_strings":[],"raw_orcid":null,"affiliations":[]},{"author_position":"middle","author":{"id":null,"display_name":"S. L. Wu","orcid":null,"observed_orcids":[]},"institutions":[],"countries":[],"is_corresponding":false,"raw_author_name":"S. L. Wu","raw_affiliation_strings":[],"raw_orcid":null,"affiliations":[]},{"author_position":"middle","author":{"id":"https://openalex.org/A5069591757","display_name":"J. F. Chen","orcid":null,"observed_orcids":[]},"institutions":[],"countries":[],"is_corresponding":false,"raw_author_name":"J. F. Chen","raw_affiliation_strings":[],"raw_orcid":null,"affiliations":[]},{"author_position":"middle","author":{"id":"https://openalex.org/A5101481570","display_name":"Sheng\u2010Yung Chang","orcid":"https://orcid.org/0000-0003-4369-9766","observed_orcids":["https://orcid.org/0000-0003-4369-9766"]},"institutions":[],"countries":[],"is_corresponding":false,"raw_author_name":"S. J. Chang","raw_affiliation_strings":[],"raw_orcid":null,"affiliations":[]},{"author_position":"middle","author":{"id":"https://openalex.org/A5078342472","display_name":"Chun-Fu Chang","orcid":"https://orcid.org/0000-0001-7750-220X","observed_orcids":["https://orcid.org/0000-0001-7750-220X"]},"institutions":[],"countries":[],"is_corresponding":false,"raw_author_name":"C. Y. Chang","raw_affiliation_strings":[],"raw_orcid":null,"affiliations":[]},{"author_position":"middle","author":{"id":"https://openalex.org/A5102838234","display_name":"Po-Chia Huang","orcid":"https://orcid.org/0000-0002-7007-5206","observed_orcids":["https://orcid.org/0000-0002-7007-5206"]},"institutions":[],"countries":[],"is_corresponding":false,"raw_author_name":"P. C. Huang","raw_affiliation_strings":[],"raw_orcid":null,"affiliations":[]},{"author_position":"middle","author":{"id":"https://openalex.org/A5102549655","display_name":"C. Y. Wu","orcid":null,"observed_orcids":[]},"institutions":[],"countries":[],"is_corresponding":false,"raw_author_name":"C. Y. Wu","raw_affiliation_strings":[],"raw_orcid":null,"affiliations":[]},{"author_position":"middle","author":{"id":null,"display_name":"M. S. Chen","orcid":null,"observed_orcids":[]},"institutions":[],"countries":[],"is_corresponding":false,"raw_author_name":"M. S. Chen","raw_affiliation_strings":[],"raw_orcid":null,"affiliations":[]},{"author_position":"middle","author":{"id":"https://openalex.org/A5101652869","display_name":"Y. C. Cheng","orcid":"https://orcid.org/0009-0006-8009-5602","observed_orcids":["https://orcid.org/0009-0006-8009-5602"]},"institutions":[],"countries":[],"is_corresponding":false,"raw_author_name":"Y. C. Cheng","raw_affiliation_strings":[],"raw_orcid":null,"affiliations":[]},{"author_position":"last","author":{"id":"https://openalex.org/A5062780103","display_name":"Osbert Cheng","orcid":"https://orcid.org/0000-0002-2610-5877","observed_orcids":["https://orcid.org/0000-0002-2610-5877"]},"institutions":[],"countries":[],"is_corresponding":false,"raw_author_name":"O. Cheng","raw_affiliation_strings":[],"raw_orcid":null,"affiliations":[]}],"institutions":[],"countries_distinct_count":0,"institutions_distinct_count":0,"corresponding_author_ids":[],"corresponding_institution_ids":[],"apc_list":null,"apc_paid":null,"fwci":0.0,"has_fulltext":false,"cited_by_count":0,"citation_normalized_percentile":{"value":0.0,"is_in_top_1_percent":false,"is_in_top_10_percent":false},"cited_by_percentile_year":null,"biblio":{"volume":null,"issue":null,"first_page":null,"last_page":null},"is_retracted":false,"is_paratext":false,"is_xpac":false,"primary_topic":{"id":"https://openalex.org/T10558","display_name":"Advancements in Semiconductor Devices and Circuit Design","score":0.7124000191688538,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},"topics":[{"id":"https://openalex.org/T10558","display_name":"Advancements in Semiconductor Devices and Circuit Design","score":0.7124000191688538,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T10472","display_name":"Semiconductor materials and devices","score":0.26249998807907104,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T11853","display_name":"Semiconductor materials and interfaces","score":0.0024999999441206455,"subfield":{"id":"https://openalex.org/subfields/2504","display_name":"Electronic, Optical and Magnetic Materials"},"field":{"id":"https://openalex.org/fields/25","display_name":"Materials Science"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}}],"keywords":[{"id":"https://openalex.org/keywords/n-mosfet","display_name":"nMOSFET","score":0.7919999957084656},{"id":"https://openalex.org/keywords/uniaxial-tensile-strain","display_name":"uniaxial tensile strain","score":0.8960000276565552},{"id":"https://openalex.org/keywords/temperature-dependence","display_name":"temperature dependence","score":0.843999981880188},{"id":"https://openalex.org/keywords/dc-noise","display_name":"DC noise","score":0.8019999861717224},{"id":"https://openalex.org/keywords/low-frequency-noise","display_name":"low-frequency noise","score":0.9959999918937683},{"id":"https://openalex.org/keywords/1-f-noise","display_name":"1/f noise","score":0.7850000262260437},{"id":"https://openalex.org/keywords/strained-silicon","display_name":"strained silicon","score":0.3630000054836273}],"concepts":[{"id":"https://openalex.org/C192562407","wikidata":"https://www.wikidata.org/wiki/Q228736","display_name":"Materials science","level":0,"score":0.9376587867736816},{"id":"https://openalex.org/C49040817","wikidata":"https://www.wikidata.org/wiki/Q193091","display_name":"Optoelectronics","level":1,"score":0.5678883790969849},{"id":"https://openalex.org/C207240575","wikidata":"https://www.wikidata.org/wiki/Q212082","display_name":"Infrasound","level":2,"score":0.5516539216041565},{"id":"https://openalex.org/C99498987","wikidata":"https://www.wikidata.org/wiki/Q2210247","display_name":"Noise (video)","level":3,"score":0.4794955849647522},{"id":"https://openalex.org/C2992207750","wikidata":"https://www.wikidata.org/wiki/Q908584","display_name":"Uniaxial tension","level":3,"score":0.4646197557449341},{"id":"https://openalex.org/C2778413303","wikidata":"https://www.wikidata.org/wiki/Q210793","display_name":"MOSFET","level":4,"score":0.45265358686447144},{"id":"https://openalex.org/C112950240","wikidata":"https://www.wikidata.org/wiki/Q76005","display_name":"Ultimate tensile strength","level":2,"score":0.41903769969940186},{"id":"https://openalex.org/C159985019","wikidata":"https://www.wikidata.org/wiki/Q181790","display_name":"Composite material","level":1,"score":0.32210665941238403},{"id":"https://openalex.org/C119599485","wikidata":"https://www.wikidata.org/wiki/Q43035","display_name":"Electrical engineering","level":1,"score":0.2920992970466614},{"id":"https://openalex.org/C24890656","wikidata":"https://www.wikidata.org/wiki/Q82811","display_name":"Acoustics","level":1,"score":0.1678914725780487},{"id":"https://openalex.org/C172385210","wikidata":"https://www.wikidata.org/wiki/Q5339","display_name":"Transistor","level":3,"score":0.15104198455810547},{"id":"https://openalex.org/C165801399","wikidata":"https://www.wikidata.org/wiki/Q25428","display_name":"Voltage","level":2,"score":0.064856618642807},{"id":"https://openalex.org/C41008148","wikidata":"https://www.wikidata.org/wiki/Q21198","display_name":"Computer science","level":0,"score":0.05568927526473999},{"id":"https://openalex.org/C154945302","wikidata":"https://www.wikidata.org/wiki/Q11660","display_name":"Artificial intelligence","level":1,"score":0.0},{"id":"https://openalex.org/C127413603","wikidata":"https://www.wikidata.org/wiki/Q11023","display_name":"Engineering","level":0,"score":0.0},{"id":"https://openalex.org/C121332964","wikidata":"https://www.wikidata.org/wiki/Q413","display_name":"Physics","level":0,"score":0.0},{"id":"https://openalex.org/C115961682","wikidata":"https://www.wikidata.org/wiki/Q860623","display_name":"Image (mathematics)","level":2,"score":0.0}],"mesh":[],"locations_count":1,"locations":[{"id":"doi:10.7567/ssdm.2011.p-3-3","doi":"https://doi.org/10.7567/ssdm.2011.p-3-3","is_oa":false,"landing_page_url":"https://doi.org/10.7567/ssdm.2011.p-3-3","pdf_url":null,"source":{"id":"https://openalex.org/S4306510274","display_name":"International Conference on Solid State Devices and Materials (SSDM)","issn_l":null,"issn":null,"is_oa":false,"is_in_doaj":false,"is_core":false,"listed_in":[],"host_organization":null,"host_organization_name":null,"host_organization_lineage":[],"host_organization_lineage_names":[],"type":"conference"},"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"Extended Abstracts of the 2011 International Conference on Solid State Devices and Materials","raw_type":"proceedings-article"}],"best_oa_location":null,"sustainable_development_goals":[],"study_designs":[],"awards":[],"funders":[],"has_content":{"pdf":false,"grobid_xml":false},"content_urls":null,"referenced_works_count":0,"referenced_works":[],"related_works":["https://openalex.org/W2118227432","https://openalex.org/W3147025852","https://openalex.org/W2146470733","https://openalex.org/W2312549043","https://openalex.org/W2461811751","https://openalex.org/W3145843252","https://openalex.org/W2467913755","https://openalex.org/W2792453851","https://openalex.org/W2519887799","https://openalex.org/W4390767309"],"abstract_inverted_index":null,"counts_by_year":[],"updated_date":"2026-10-14T16:39:01.820549","created_date":"2016-06-24T00:00:00"}