{"id":"https://openalex.org/W2252934741","doi":null,"title":"Experimental Investigation of the Electrostatic Discharge(ESD) Damage in Packaged Semiconductor Devices","display_name":"Experimental Investigation of the Electrostatic Discharge(ESD) Damage in Packaged Semiconductor Devices","publication_year":2002,"publication_date":"2002-01-01","ids":{"openalex":"https://openalex.org/W2252934741","mag":"2252934741"},"language":"en","primary_location":{"id":"mag:2252934741","doi":null,"is_oa":false,"landing_page_url":"http://dspace.kci.go.kr/handle/kci/1017761","pdf_url":null,"source":{"id":"https://openalex.org/S4306516308","display_name":"Journal of the Korean Society of Safety","issn_l":"1738-3803","issn":["1738-3803","2383-9953"],"is_oa":false,"is_in_doaj":false,"is_core":false,"listed_in":["kci-registered"],"host_organization":null,"host_organization_name":null,"host_organization_lineage":[],"host_organization_lineage_names":[],"type":"journal"},"license":null,"license_id":null,"version":null,"is_accepted":false,"is_published":false,"raw_source_name":"\ud55c\uad6d\uc548\uc804\ud559\ud68c\uc9c0(\uad6c \uc0b0\uc5c5\uc548\uc804\ud559\ud68c\uc9c0)","raw_type":null},"volume":null,"type":"article","is_traditional":true,"indexed_in":[],"open_access":{"is_oa":false,"oa_status":"closed","oa_url":null,"any_repository_has_fulltext":false},"authorships":[{"author_position":"first","author":{"id":"https://openalex.org/A5007994657","display_name":"\uae40\uc0c1\ub82c","orcid":null,"observed_orcids":[]},"institutions":[],"countries":[],"is_corresponding":false,"raw_author_name":"\uae40\uc0c1\ub82c","raw_affiliation_strings":[],"raw_orcid":null,"affiliations":[]},{"author_position":"middle","author":{"id":"https://openalex.org/A5053984814","display_name":"\uae40\ub450\ud604","orcid":null,"observed_orcids":[]},"institutions":[],"countries":[],"is_corresponding":false,"raw_author_name":"\uae40\ub450\ud604","raw_affiliation_strings":[],"raw_orcid":null,"affiliations":[]},{"author_position":"last","author":{"id":"https://openalex.org/A5035982437","display_name":"\uac15\ub3d9\uaddc","orcid":null,"observed_orcids":[]},"institutions":[],"countries":[],"is_corresponding":false,"raw_author_name":"\uac15\ub3d9\uaddc","raw_affiliation_strings":[],"raw_orcid":null,"affiliations":[]}],"institutions":[],"countries_distinct_count":0,"institutions_distinct_count":0,"corresponding_author_ids":[],"corresponding_institution_ids":[],"apc_list":null,"apc_paid":null,"fwci":0.0,"has_fulltext":false,"cited_by_count":0,"citation_normalized_percentile":{"value":0.28046553,"is_in_top_1_percent":false,"is_in_top_10_percent":false},"cited_by_percentile_year":null,"biblio":{"volume":"17","issue":"4","first_page":"94","last_page":"100"},"is_retracted":false,"is_paratext":false,"is_xpac":false,"primary_topic":{"id":"https://openalex.org/T12495","display_name":"Electrostatic Discharge in Electronics","score":1.0,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},"topics":[{"id":"https://openalex.org/T12495","display_name":"Electrostatic Discharge in Electronics","score":1.0,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T14117","display_name":"Integrated Circuits and Semiconductor Failure Analysis","score":0.0,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T10361","display_name":"Silicon Carbide Semiconductor Technologies","score":0.0,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}}],"keywords":[{"id":"https://openalex.org/keywords/electrostatic-discharge","display_name":"electrostatic discharge","score":0.8980000019073486},{"id":"https://openalex.org/keywords/esd-damage","display_name":"ESD damage","score":0.9419999718666077},{"id":"https://openalex.org/keywords/charged-device-model","display_name":"charged device model","score":0.8849999904632568},{"id":"https://openalex.org/keywords/failure-modes","display_name":"failure modes","score":0.8330000042915344}],"concepts":[{"id":"https://openalex.org/C205483674","wikidata":"https://www.wikidata.org/wiki/Q3574961","display_name":"Electrostatic discharge","level":3,"score":0.889968752861023},{"id":"https://openalex.org/C79635011","wikidata":"https://www.wikidata.org/wiki/Q175805","display_name":"Semiconductor device","level":3,"score":0.7326656579971313},{"id":"https://openalex.org/C108225325","wikidata":"https://www.wikidata.org/wiki/Q11456","display_name":"Semiconductor","level":2,"score":0.6382173895835876},{"id":"https://openalex.org/C165801399","wikidata":"https://www.wikidata.org/wiki/Q25428","display_name":"Voltage","level":2,"score":0.5323747992515564},{"id":"https://openalex.org/C76249512","wikidata":"https://www.wikidata.org/wiki/Q1206780","display_name":"Device under test","level":3,"score":0.48540863394737244},{"id":"https://openalex.org/C138331895","wikidata":"https://www.wikidata.org/wiki/Q11650","display_name":"Electronics","level":2,"score":0.47185584902763367},{"id":"https://openalex.org/C119599485","wikidata":"https://www.wikidata.org/wiki/Q43035","display_name":"Electrical engineering","level":1,"score":0.45432037115097046},{"id":"https://openalex.org/C9652623","wikidata":"https://www.wikidata.org/wiki/Q190109","display_name":"Field (mathematics)","level":2,"score":0.4324125647544861},{"id":"https://openalex.org/C66018809","wikidata":"https://www.wikidata.org/wiki/Q1570432","display_name":"Semiconductor device fabrication","level":3,"score":0.41727936267852783},{"id":"https://openalex.org/C127413603","wikidata":"https://www.wikidata.org/wiki/Q11023","display_name":"Engineering","level":0,"score":0.3710482716560364},{"id":"https://openalex.org/C24326235","wikidata":"https://www.wikidata.org/wiki/Q126095","display_name":"Electronic engineering","level":1,"score":0.3589177131652832},{"id":"https://openalex.org/C41008148","wikidata":"https://www.wikidata.org/wiki/Q21198","display_name":"Computer science","level":0,"score":0.35482704639434814},{"id":"https://openalex.org/C192562407","wikidata":"https://www.wikidata.org/wiki/Q228736","display_name":"Materials science","level":0,"score":0.3223012089729309},{"id":"https://openalex.org/C171250308","wikidata":"https://www.wikidata.org/wiki/Q11468","display_name":"Nanotechnology","level":1,"score":0.09279194474220276},{"id":"https://openalex.org/C202444582","wikidata":"https://www.wikidata.org/wiki/Q837863","display_name":"Pure mathematics","level":1,"score":0.0},{"id":"https://openalex.org/C33923547","wikidata":"https://www.wikidata.org/wiki/Q395","display_name":"Mathematics","level":0,"score":0.0},{"id":"https://openalex.org/C2779227376","wikidata":"https://www.wikidata.org/wiki/Q6505497","display_name":"Layer (electronics)","level":2,"score":0.0},{"id":"https://openalex.org/C195266298","wikidata":"https://www.wikidata.org/wiki/Q2165620","display_name":"Scattering parameters","level":2,"score":0.0},{"id":"https://openalex.org/C160671074","wikidata":"https://www.wikidata.org/wiki/Q267131","display_name":"Wafer","level":2,"score":0.0}],"mesh":[],"locations_count":2,"locations":[{"id":"mag:2252934741","doi":null,"is_oa":false,"landing_page_url":"http://dspace.kci.go.kr/handle/kci/1017761","pdf_url":null,"source":{"id":"https://openalex.org/S4306516308","display_name":"Journal of the Korean Society of Safety","issn_l":"1738-3803","issn":["1738-3803","2383-9953"],"is_oa":false,"is_in_doaj":false,"is_core":false,"listed_in":["kci-registered"],"host_organization":null,"host_organization_name":null,"host_organization_lineage":[],"host_organization_lineage_names":[],"type":"journal"},"license":null,"license_id":null,"version":null,"is_accepted":false,"is_published":false,"raw_source_name":"\ud55c\uad6d\uc548\uc804\ud559\ud68c\uc9c0(\uad6c \uc0b0\uc5c5\uc548\uc804\ud559\ud68c\uc9c0)","raw_type":null},{"id":"mag:2400287769","doi":null,"is_oa":false,"landing_page_url":"http://www.koreascience.or.kr/article/ArticleFullRecord.jsp?cn=HOJHB0_2002_v17n4_94","pdf_url":null,"source":{"id":"https://openalex.org/S4306516308","display_name":"Journal of the Korean Society of Safety","issn_l":"1738-3803","issn":["1738-3803","2383-9953"],"is_oa":false,"is_in_doaj":false,"is_core":false,"listed_in":["kci-registered"],"host_organization":null,"host_organization_name":null,"host_organization_lineage":[],"host_organization_lineage_names":[],"type":"journal"},"license":null,"license_id":null,"version":null,"is_accepted":false,"is_published":false,"raw_source_name":"Journal of the Korean Society of Safety","raw_type":null}],"best_oa_location":null,"sustainable_development_goals":[],"study_designs":[],"awards":[],"funders":[],"has_content":{"pdf":false,"grobid_xml":false},"content_urls":null,"referenced_works_count":0,"referenced_works":[],"related_works":["https://openalex.org/W2400287769","https://openalex.org/W2265321236","https://openalex.org/W2118688785","https://openalex.org/W2120566627","https://openalex.org/W2117451274","https://openalex.org/W2024254155","https://openalex.org/W4232023537","https://openalex.org/W2185775227","https://openalex.org/W2081531051","https://openalex.org/W2033439990"],"abstract_inverted_index":{"As":[0],"the":[1,26,82,89,95,130,134,137,141,156],"use":[2],"of":[3,15,28,37,61,91,119,122,184],"automatic":[4],"handling":[5],"equipment":[6],"for":[7,57],"sensitive":[8],"semiconductor":[9,38,62,124,175],"devices":[10,63,125,153,176],"is":[11,55,86],"rapidly":[12],"increased,":[13],"manufacturers":[14],"electronic":[16],"components":[17],"and":[18,64,68,103,111,115,144,149,160,180,187],"equipments":[19],"need":[20],"to":[21,25,33,81,128,173,190],"be":[22,171,181],"more":[23],"alert":[24],"problem":[27],"electrostatic":[29,120],"discharges(ESD).":[30],"In":[31],"order":[32],"analyze":[34],"damage":[35],"characteristics":[36,118],"device":[39,83,101,142],"damaged":[40,152],"by":[41,88,162],"ESD,":[42],"this":[43,168],"study":[44],"adopts":[45],"a":[46,66,105,182],"new":[47],"charged-device":[48],"model(CDM),":[49],"field-induced":[50],"charged":[51],"model(FCDM)":[52],"simulator":[53,157],"that":[54,71],"suitable":[56],"rapid,":[58],"routine":[59],"testing":[60],"provides":[65],"fast":[67],"inexpensive":[69],"test":[70,85,107],"faithfully":[72],"represents":[73],"ESD":[74,131,178,191],"hazards":[75,179],"in":[76,94,133,155,167],"plants.":[77],"High":[78],"voltage":[79],"applied":[80],"under":[84],"raised":[87],"field":[90,138],"non-contacting":[92],"electrodes":[93],"FCDM":[96],"simulator,":[97],"which":[98],"avoids":[99],"premature":[100],"stressing":[102],"permits":[104],"faster":[106],"cycle.":[108],"Discharge":[109],"current":[110],"time":[112],"are":[113,126,147,158],"measured":[114],"calculated.":[116],"The":[117,151,164],"attenuation":[121],"domestic":[123],"investigated":[127,148],"evaluate":[129],"phenomena":[132],"semiconductors.":[135],"Also,":[136],"charging":[139],"mechanism,":[140],"thresholds":[143],"failure":[145],"modes":[146],"analyzed.":[150],"obtained":[154,166],"analyzed":[159],"evaluated":[161],"SEM.":[163],"results":[165],"paper":[169],"can":[170],"used":[172],"prevent":[174],"from":[177],"foundation":[183],"research":[185],"area":[186],"industry":[188],"relevant":[189],"phenomena.":[192]},"counts_by_year":[],"updated_date":"2026-11-08T12:12:28.789561","created_date":"2016-06-24T00:00:00"}