{"id":"https://openalex.org/W2236069792","doi":"https://doi.org/10.1149/06908.0159ecst","title":"Etching of Silicon Nitride in 3D NAND Structures","display_name":"Etching of Silicon Nitride in 3D NAND Structures","publication_year":2015,"publication_date":"2015-09-11","ids":{"openalex":"https://openalex.org/W2236069792","doi":"https://doi.org/10.1149/06908.0159ecst","mag":"2236069792"},"language":"en","primary_location":{"id":"doi:10.1149/06908.0159ecst","doi":"https://doi.org/10.1149/06908.0159ecst","is_oa":true,"landing_page_url":"https://doi.org/10.1149/06908.0159ecst","pdf_url":"https://iopscience.iop.org/article/10.1149/06908.0159ecst/pdf","source":{"id":"https://openalex.org/S4210205149","display_name":"ECS Transactions","issn_l":"1938-5862","issn":["1938-5862","1938-6737","2151-2051"],"is_oa":false,"is_in_doaj":false,"is_core":false,"listed_in":["norway-1","poland-20"],"host_organization":"https://openalex.org/P4310311669","host_organization_name":"Institute of Physics","host_organization_lineage":["https://openalex.org/P4310311669"],"host_organization_lineage_names":["Institute of Physics"],"type":"journal"},"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"ECS Transactions","raw_type":"journal-article"},"volume":null,"type":"conference-paper","is_traditional":true,"indexed_in":["crossref"],"open_access":{"is_oa":true,"oa_status":"bronze","oa_url":"https://iopscience.iop.org/article/10.1149/06908.0159ecst/pdf","any_repository_has_fulltext":false},"authorships":[{"author_position":"first","author":{"id":"https://openalex.org/A5064983500","display_name":"Derek W. Bassett","orcid":"https://orcid.org/0000-0002-9452-2322","observed_orcids":["https://orcid.org/0000-0002-9452-2322"]},"institutions":[{"id":"https://openalex.org/I114132059","display_name":"Tokyo Electron (Japan)","ror":"https://ror.org/05gd76j39","country_code":"JP","type":"company","lineage":["https://openalex.org/I114132059"]}],"countries":["JP"],"is_corresponding":false,"raw_author_name":"Derek Bassett","raw_affiliation_strings":["Tokyo Electron"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Tokyo Electron","institution_ids":["https://openalex.org/I114132059"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5064580929","display_name":"Wallace P. Printz","orcid":null,"observed_orcids":[]},"institutions":[{"id":"https://openalex.org/I114132059","display_name":"Tokyo Electron (Japan)","ror":"https://ror.org/05gd76j39","country_code":"JP","type":"company","lineage":["https://openalex.org/I114132059"]}],"countries":["JP"],"is_corresponding":false,"raw_author_name":"Wallace Printz","raw_affiliation_strings":["Tokyo Electron"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Tokyo Electron","institution_ids":["https://openalex.org/I114132059"]}]},{"author_position":"last","author":{"id":"https://openalex.org/A5053665736","display_name":"Takahiro Furukawa","orcid":"https://orcid.org/0000-0002-8686-6563","observed_orcids":["https://orcid.org/0000-0002-8686-6563"]},"institutions":[{"id":"https://openalex.org/I114132059","display_name":"Tokyo Electron (Japan)","ror":"https://ror.org/05gd76j39","country_code":"JP","type":"company","lineage":["https://openalex.org/I114132059"]}],"countries":["JP"],"is_corresponding":false,"raw_author_name":"Takahiro Furukawa","raw_affiliation_strings":["Tokyo Electron"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Tokyo Electron","institution_ids":["https://openalex.org/I114132059"]}]}],"institutions":[],"countries_distinct_count":1,"institutions_distinct_count":1,"corresponding_author_ids":[],"corresponding_institution_ids":["https://openalex.org/I114132059"],"apc_list":null,"apc_paid":null,"fwci":0.4158,"has_fulltext":true,"cited_by_count":28,"citation_normalized_percentile":{"value":0.43804627,"is_in_top_1_percent":false,"is_in_top_10_percent":false},"cited_by_percentile_year":{"min":87,"max":99},"biblio":{"volume":"69","issue":"8","first_page":"159","last_page":"167"},"is_retracted":false,"is_paratext":false,"is_xpac":false,"primary_topic":{"id":"https://openalex.org/T10472","display_name":"Semiconductor materials and devices","score":0.6685000061988831,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},"topics":[{"id":"https://openalex.org/T10472","display_name":"Semiconductor materials and devices","score":0.6685000061988831,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T10781","display_name":"Low-Pressure Plasma Processing and Diagnostics","score":0.12549999356269836,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T11527","display_name":"3D IC and TSV technologies","score":0.016899999231100082,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}}],"keywords":[{"id":"https://openalex.org/keywords/silicon-nitride-etching","display_name":"silicon nitride etching","score":0.9850000143051147},{"id":"https://openalex.org/keywords/3d-nand-flash-memory","display_name":"3D NAND flash memory","score":0.8019999861717224},{"id":"https://openalex.org/keywords/phosphoric-acid","display_name":"phosphoric acid","score":0.828000009059906},{"id":"https://openalex.org/keywords/etch-rate","display_name":"etch rate","score":0.800000011920929},{"id":"https://openalex.org/keywords/silicon-dioxide-etching","display_name":"silicon dioxide etching","score":0.7850000262260437},{"id":"https://openalex.org/keywords/etching-simulation","display_name":"etching simulation","score":0.7049999833106995},{"id":"https://openalex.org/keywords/temperature-dependence","display_name":"temperature dependence","score":0.6740000247955322},{"id":"https://openalex.org/keywords/acid-concentration","display_name":"acid concentration","score":0.699999988079071},{"id":"https://openalex.org/keywords/diffusion-effects","display_name":"diffusion effects","score":0.367000013589859}],"concepts":[{"id":"https://openalex.org/C100460472","wikidata":"https://www.wikidata.org/wiki/Q2368605","display_name":"Etching (microfabrication)","level":3,"score":0.8333795666694641},{"id":"https://openalex.org/C160671074","wikidata":"https://www.wikidata.org/wiki/Q267131","display_name":"Wafer","level":2,"score":0.6991045475006104},{"id":"https://openalex.org/C192562407","wikidata":"https://www.wikidata.org/wiki/Q228736","display_name":"Materials science","level":0,"score":0.6634044647216797},{"id":"https://openalex.org/C124296912","wikidata":"https://www.wikidata.org/wiki/Q575178","display_name":"NAND gate","level":3,"score":0.6552326083183289},{"id":"https://openalex.org/C194760766","wikidata":"https://www.wikidata.org/wiki/Q410851","display_name":"Nitride","level":3,"score":0.5309785008430481},{"id":"https://openalex.org/C2779261148","wikidata":"https://www.wikidata.org/wiki/Q5852","display_name":"Blanket","level":2,"score":0.5186606645584106},{"id":"https://openalex.org/C2777431650","wikidata":"https://www.wikidata.org/wiki/Q413828","display_name":"Silicon nitride","level":3,"score":0.5058590769767761},{"id":"https://openalex.org/C69357855","wikidata":"https://www.wikidata.org/wiki/Q163214","display_name":"Diffusion","level":2,"score":0.47932755947113037},{"id":"https://openalex.org/C49040817","wikidata":"https://www.wikidata.org/wiki/Q193091","display_name":"Optoelectronics","level":1,"score":0.4579436182975769},{"id":"https://openalex.org/C544956773","wikidata":"https://www.wikidata.org/wiki/Q670","display_name":"Silicon","level":2,"score":0.4063805937767029},{"id":"https://openalex.org/C171250308","wikidata":"https://www.wikidata.org/wiki/Q11468","display_name":"Nanotechnology","level":1,"score":0.32893645763397217},{"id":"https://openalex.org/C159985019","wikidata":"https://www.wikidata.org/wiki/Q181790","display_name":"Composite material","level":1,"score":0.21849235892295837},{"id":"https://openalex.org/C24326235","wikidata":"https://www.wikidata.org/wiki/Q126095","display_name":"Electronic engineering","level":1,"score":0.19328519701957703},{"id":"https://openalex.org/C2779227376","wikidata":"https://www.wikidata.org/wiki/Q6505497","display_name":"Layer (electronics)","level":2,"score":0.18353846669197083},{"id":"https://openalex.org/C131017901","wikidata":"https://www.wikidata.org/wiki/Q170451","display_name":"Logic gate","level":2,"score":0.13344362378120422},{"id":"https://openalex.org/C97355855","wikidata":"https://www.wikidata.org/wiki/Q11473","display_name":"Thermodynamics","level":1,"score":0.055106550455093384},{"id":"https://openalex.org/C127413603","wikidata":"https://www.wikidata.org/wiki/Q11023","display_name":"Engineering","level":0,"score":0.05413922667503357},{"id":"https://openalex.org/C121332964","wikidata":"https://www.wikidata.org/wiki/Q413","display_name":"Physics","level":0,"score":0.0}],"mesh":[],"locations_count":1,"locations":[{"id":"doi:10.1149/06908.0159ecst","doi":"https://doi.org/10.1149/06908.0159ecst","is_oa":true,"landing_page_url":"https://doi.org/10.1149/06908.0159ecst","pdf_url":"https://iopscience.iop.org/article/10.1149/06908.0159ecst/pdf","source":{"id":"https://openalex.org/S4210205149","display_name":"ECS Transactions","issn_l":"1938-5862","issn":["1938-5862","1938-6737","2151-2051"],"is_oa":false,"is_in_doaj":false,"is_core":false,"listed_in":["norway-1","poland-20"],"host_organization":"https://openalex.org/P4310311669","host_organization_name":"Institute of Physics","host_organization_lineage":["https://openalex.org/P4310311669"],"host_organization_lineage_names":["Institute of Physics"],"type":"journal"},"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"ECS Transactions","raw_type":"journal-article"}],"best_oa_location":{"id":"doi:10.1149/06908.0159ecst","doi":"https://doi.org/10.1149/06908.0159ecst","is_oa":true,"landing_page_url":"https://doi.org/10.1149/06908.0159ecst","pdf_url":"https://iopscience.iop.org/article/10.1149/06908.0159ecst/pdf","source":{"id":"https://openalex.org/S4210205149","display_name":"ECS Transactions","issn_l":"1938-5862","issn":["1938-5862","1938-6737","2151-2051"],"is_oa":false,"is_in_doaj":false,"is_core":false,"listed_in":["norway-1","poland-20"],"host_organization":"https://openalex.org/P4310311669","host_organization_name":"Institute of Physics","host_organization_lineage":["https://openalex.org/P4310311669"],"host_organization_lineage_names":["Institute of Physics"],"type":"journal"},"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"ECS Transactions","raw_type":"journal-article"},"sustainable_development_goals":[],"study_designs":[],"awards":[],"funders":[],"has_content":{"grobid_xml":true,"pdf":true},"content_urls":{"pdf":"https://content.openalex.org/works/W2236069792.pdf","grobid_xml":"https://content.openalex.org/works/W2236069792.grobid-xml"},"referenced_works_count":0,"referenced_works":[],"related_works":["https://openalex.org/W4285399080","https://openalex.org/W4385805759","https://openalex.org/W7125958299","https://openalex.org/W4405589114","https://openalex.org/W2977352661","https://openalex.org/W4386352475","https://openalex.org/W4402237141","https://openalex.org/W4254478891","https://openalex.org/W4406821175","https://openalex.org/W2991214602"],"abstract_inverted_index":{"We":[0],"present":[1],"results":[2],"of":[3,13,40],"experimental":[4],"measurements,":[5],"simulations,":[6],"and":[7,22,31,52,55,69],"models":[8],"to":[9,37],"better":[10],"understand":[11],"etching":[12,39,48],"SiN":[14,21],"with":[15],"H3PO4":[16],"in":[17],"3D":[18,41],"NAND":[19,42],"structures.":[20,43],"SiO2":[23],"etch":[24,33,65,74],"rates":[25,34],"were":[26,35],"measured":[27],"on":[28,62],"blanket":[29],"wafers,":[30],"those":[32],"used":[36],"simulate":[38],"Results":[44],"show":[45],"that":[46,53],"the":[47,63,73],"is":[49],"reaction":[50],"limited,":[51],"diffusion":[54],"acid":[56],"flow":[57],"rate":[58],"has":[59],"no":[60],"effect":[61],"local":[64],"rate,":[66],"but":[67],"temperature":[68],"concentration":[70],"do":[71],"affect":[72],"rate.":[75]},"counts_by_year":[{"year":2026,"cited_by_count":2},{"year":2025,"cited_by_count":2},{"year":2024,"cited_by_count":2},{"year":2023,"cited_by_count":10},{"year":2022,"cited_by_count":6},{"year":2021,"cited_by_count":1},{"year":2020,"cited_by_count":1},{"year":2019,"cited_by_count":3},{"year":2018,"cited_by_count":1}],"updated_date":"2026-11-07T11:25:07.637180","created_date":"2016-06-24T00:00:00"}