{"id":"https://openalex.org/W2201266887","doi":"https://doi.org/10.1088/1674-4926/34/12/124002","title":"A computational study of the effects of linear doping profile on the high-frequency and switching performances of hetero-material-gate CNTFETs","display_name":"A computational study of the effects of linear doping profile on the high-frequency and switching performances of hetero-material-gate CNTFETs","publication_year":2013,"publication_date":"2013-12-01","ids":{"openalex":"https://openalex.org/W2201266887","doi":"https://doi.org/10.1088/1674-4926/34/12/124002","mag":"2201266887"},"language":"en","primary_location":{"id":"doi:10.1088/1674-4926/34/12/124002","doi":"https://doi.org/10.1088/1674-4926/34/12/124002","is_oa":true,"landing_page_url":"https://doi.org/10.1088/1674-4926/34/12/124002","pdf_url":"https://iopscience.iop.org/article/10.1088/1674-4926/34/12/124002/pdf","source":{"id":"https://openalex.org/S52834336","display_name":"Journal of Semiconductors","issn_l":"1674-4926","issn":["1674-4926","2058-6140"],"is_oa":false,"is_in_doaj":false,"is_core":true,"listed_in":["cwts-core","dongbi-b","jufo-1","poland-40","russia-white-list-2"],"host_organization":"https://openalex.org/P4310320083","host_organization_name":"IOP Publishing","host_organization_lineage":["https://openalex.org/P4310320083","https://openalex.org/P4310311669"],"host_organization_lineage_names":["IOP Publishing","Institute of Physics"],"type":"journal"},"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"Journal of Semiconductors","raw_type":"journal-article"},"volume":null,"type":"article","indexed_in":["crossref"],"open_access":{"is_oa":true,"oa_status":"bronze","oa_url":"https://iopscience.iop.org/article/10.1088/1674-4926/34/12/124002/pdf","any_repository_has_fulltext":false},"authorships":[{"author_position":"first","author":{"id":null,"display_name":"Wei Wang","orcid":null,"observed_orcids":[]},"institutions":[{"id":"https://openalex.org/I41198531","display_name":"Nanjing University of Posts and Telecommunications","ror":"https://ror.org/043bpky34","country_code":"CN","type":"education","lineage":["https://openalex.org/I41198531"]}],"countries":["CN"],"is_corresponding":false,"raw_author_name":"Wei Wang","raw_affiliation_strings":["College of Electronic Science Engineering, Nanjing University of Posts and Telecommunications, Nanjing 210046, China"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"College of Electronic Science Engineering, Nanjing University of Posts and Telecommunications, Nanjing 210046, China","institution_ids":["https://openalex.org/I41198531"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5100368058","display_name":"Na Li","orcid":"https://orcid.org/0000-0002-0392-6672","observed_orcids":["https://orcid.org/0000-0002-0392-6672"]},"institutions":[{"id":"https://openalex.org/I41198531","display_name":"Nanjing University of Posts and Telecommunications","ror":"https://ror.org/043bpky34","country_code":"CN","type":"education","lineage":["https://openalex.org/I41198531"]}],"countries":["CN"],"is_corresponding":false,"raw_author_name":"Na Li","raw_affiliation_strings":["College of Electronic Science Engineering, Nanjing University of Posts and Telecommunications, Nanjing 210046, China"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"College of Electronic Science Engineering, Nanjing University of Posts and Telecommunications, Nanjing 210046, China","institution_ids":["https://openalex.org/I41198531"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5061308174","display_name":"Yuzhou Ren","orcid":null,"observed_orcids":[]},"institutions":[{"id":"https://openalex.org/I41198531","display_name":"Nanjing University of Posts and Telecommunications","ror":"https://ror.org/043bpky34","country_code":"CN","type":"education","lineage":["https://openalex.org/I41198531"]}],"countries":["CN"],"is_corresponding":false,"raw_author_name":"Yuzhou Ren","raw_affiliation_strings":["College of Electronic Science Engineering, Nanjing University of Posts and Telecommunications, Nanjing 210046, China"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"College of Electronic Science Engineering, Nanjing University of Posts and Telecommunications, Nanjing 210046, China","institution_ids":["https://openalex.org/I41198531"]}]},{"author_position":"middle","author":{"id":null,"display_name":"Hao Li","orcid":null,"observed_orcids":[]},"institutions":[{"id":"https://openalex.org/I41198531","display_name":"Nanjing University of Posts and Telecommunications","ror":"https://ror.org/043bpky34","country_code":"CN","type":"education","lineage":["https://openalex.org/I41198531"]}],"countries":["CN"],"is_corresponding":false,"raw_author_name":"Hao Li","raw_affiliation_strings":["College of Electronic Science Engineering, Nanjing University of Posts and Telecommunications, Nanjing 210046, China"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"College of Electronic Science Engineering, Nanjing University of Posts and Telecommunications, Nanjing 210046, China","institution_ids":["https://openalex.org/I41198531"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5037277739","display_name":"Lifen Zheng","orcid":null,"observed_orcids":[]},"institutions":[{"id":"https://openalex.org/I41198531","display_name":"Nanjing University of Posts and Telecommunications","ror":"https://ror.org/043bpky34","country_code":"CN","type":"education","lineage":["https://openalex.org/I41198531"]}],"countries":["CN"],"is_corresponding":false,"raw_author_name":"Lifen Zheng","raw_affiliation_strings":["College of Electronic Science Engineering, Nanjing University of Posts and Telecommunications, Nanjing 210046, China"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"College of Electronic Science Engineering, Nanjing University of Posts and Telecommunications, Nanjing 210046, China","institution_ids":["https://openalex.org/I41198531"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5100364824","display_name":"Jin Chun Li","orcid":"https://orcid.org/0000-0003-1099-6289","observed_orcids":["https://orcid.org/0000-0003-1099-6289","https://orcid.org/0000-0002-0815-4587"]},"institutions":[{"id":"https://openalex.org/I41198531","display_name":"Nanjing University of Posts and Telecommunications","ror":"https://ror.org/043bpky34","country_code":"CN","type":"education","lineage":["https://openalex.org/I41198531"]}],"countries":["CN"],"is_corresponding":false,"raw_author_name":"Jin Li","raw_affiliation_strings":["College of Electronic Science Engineering, Nanjing University of Posts and Telecommunications, Nanjing 210046, China"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"College of Electronic Science Engineering, Nanjing University of Posts and Telecommunications, Nanjing 210046, China","institution_ids":["https://openalex.org/I41198531"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5002934743","display_name":"Junjie Jiang","orcid":"https://orcid.org/0000-0001-8752-7347","observed_orcids":["https://orcid.org/0000-0001-8752-7347"]},"institutions":[{"id":"https://openalex.org/I41198531","display_name":"Nanjing University of Posts and Telecommunications","ror":"https://ror.org/043bpky34","country_code":"CN","type":"education","lineage":["https://openalex.org/I41198531"]}],"countries":["CN"],"is_corresponding":false,"raw_author_name":"Junjie Jiang","raw_affiliation_strings":["College of Electronic Science Engineering, Nanjing University of Posts and Telecommunications, Nanjing 210046, China"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"College of Electronic Science Engineering, Nanjing University of Posts and Telecommunications, Nanjing 210046, China","institution_ids":["https://openalex.org/I41198531"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5100462196","display_name":"Xiaoping Chen","orcid":"https://orcid.org/0000-0001-9319-1261","observed_orcids":["https://orcid.org/0000-0001-9319-1261"]},"institutions":[{"id":"https://openalex.org/I41198531","display_name":"Nanjing University of Posts and Telecommunications","ror":"https://ror.org/043bpky34","country_code":"CN","type":"education","lineage":["https://openalex.org/I41198531"]}],"countries":["CN"],"is_corresponding":false,"raw_author_name":"Xiaoping Chen","raw_affiliation_strings":["College of Electronic Science Engineering, Nanjing University of Posts and Telecommunications, Nanjing 210046, China"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"College of Electronic Science Engineering, Nanjing University of Posts and Telecommunications, Nanjing 210046, China","institution_ids":["https://openalex.org/I41198531"]}]},{"author_position":"middle","author":{"id":null,"display_name":"Kai Wang","orcid":null,"observed_orcids":[]},"institutions":[{"id":"https://openalex.org/I41198531","display_name":"Nanjing University of Posts and Telecommunications","ror":"https://ror.org/043bpky34","country_code":"CN","type":"education","lineage":["https://openalex.org/I41198531"]}],"countries":["CN"],"is_corresponding":false,"raw_author_name":"Kai Wang","raw_affiliation_strings":["College of Electronic Science Engineering, Nanjing University of Posts and Telecommunications, Nanjing 210046, China"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"College of Electronic Science Engineering, Nanjing University of Posts and Telecommunications, Nanjing 210046, China","institution_ids":["https://openalex.org/I41198531"]}]},{"author_position":"last","author":{"id":"https://openalex.org/A5054199722","display_name":"Chunping Xia","orcid":null,"observed_orcids":[]},"institutions":[{"id":"https://openalex.org/I41198531","display_name":"Nanjing University of Posts and Telecommunications","ror":"https://ror.org/043bpky34","country_code":"CN","type":"education","lineage":["https://openalex.org/I41198531"]}],"countries":["CN"],"is_corresponding":false,"raw_author_name":"Chunping Xia","raw_affiliation_strings":["College of Electronic Science Engineering, Nanjing University of Posts and Telecommunications, Nanjing 210046, China"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"College of Electronic Science Engineering, Nanjing University of Posts and Telecommunications, Nanjing 210046, China","institution_ids":["https://openalex.org/I41198531"]}]}],"institutions":[],"countries_distinct_count":1,"institutions_distinct_count":1,"corresponding_author_ids":[],"corresponding_institution_ids":["https://openalex.org/I41198531"],"apc_list":{"value":2450,"currency":"USD","value_usd":2450},"apc_paid":null,"fwci":0.7999,"has_fulltext":true,"cited_by_count":6,"citation_normalized_percentile":{"value":0.77533247,"is_in_top_1_percent":false,"is_in_top_10_percent":false},"cited_by_percentile_year":{"min":89,"max":96},"biblio":{"volume":"34","issue":"12","first_page":"124002","last_page":"124002"},"is_retracted":false,"is_paratext":false,"is_xpac":false,"primary_topic":{"id":"https://openalex.org/T10558","display_name":"Advancements in Semiconductor Devices and Circuit Design","score":0.9243000149726868,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},"topics":[{"id":"https://openalex.org/T10558","display_name":"Advancements in Semiconductor Devices and Circuit Design","score":0.9243000149726868,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T10083","display_name":"Graphene research and applications","score":0.048900000751018524,"subfield":{"id":"https://openalex.org/subfields/2505","display_name":"Materials Chemistry"},"field":{"id":"https://openalex.org/fields/25","display_name":"Materials Science"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T10074","display_name":"Carbon Nanotubes in Composites","score":0.007600000128149986,"subfield":{"id":"https://openalex.org/subfields/2505","display_name":"Materials Chemistry"},"field":{"id":"https://openalex.org/fields/25","display_name":"Materials Science"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}}],"keywords":[{"id":"https://openalex.org/keywords/carbon-nanotube-field-effect-transistors","display_name":"carbon nanotube field-effect transistors","score":0.9599999785423279},{"id":"https://openalex.org/keywords/cutoff-frequency","display_name":"cutoff frequency","score":0.7910000085830688},{"id":"https://openalex.org/keywords/switching-speed","display_name":"switching speed","score":0.9610000252723694},{"id":"https://openalex.org/keywords/on-off-ratio","display_name":"on/off current ratio","score":0.9580000042915344},{"id":"https://openalex.org/keywords/short-channel-effects","display_name":"short-channel effects","score":0.9879999756813049},{"id":"https://openalex.org/keywords/nonequilibrium-green-s-function","display_name":"non-equilibrium Green's function","score":0.953000009059906},{"id":"https://openalex.org/keywords/device-reliability","display_name":"device reliability","score":0.33000001311302185}],"concepts":[{"id":"https://openalex.org/C58916441","wikidata":"https://www.wikidata.org/wiki/Q1778563","display_name":"Carbon nanotube field-effect transistor","level":5,"score":0.796518087387085},{"id":"https://openalex.org/C192562407","wikidata":"https://www.wikidata.org/wiki/Q228736","display_name":"Materials science","level":0,"score":0.6203231811523438},{"id":"https://openalex.org/C6142545","wikidata":"https://www.wikidata.org/wiki/Q1455881","display_name":"Cutoff frequency","level":2,"score":0.5658779740333557},{"id":"https://openalex.org/C57863236","wikidata":"https://www.wikidata.org/wiki/Q1130571","display_name":"Doping","level":2,"score":0.4865228533744812},{"id":"https://openalex.org/C49040817","wikidata":"https://www.wikidata.org/wiki/Q193091","display_name":"Optoelectronics","level":1,"score":0.3740265369415283},{"id":"https://openalex.org/C24326235","wikidata":"https://www.wikidata.org/wiki/Q126095","display_name":"Electronic engineering","level":1,"score":0.3532223105430603},{"id":"https://openalex.org/C171250308","wikidata":"https://www.wikidata.org/wiki/Q11468","display_name":"Nanotechnology","level":1,"score":0.3304094076156616},{"id":"https://openalex.org/C172385210","wikidata":"https://www.wikidata.org/wiki/Q5339","display_name":"Transistor","level":3,"score":0.1790294647216797},{"id":"https://openalex.org/C119599485","wikidata":"https://www.wikidata.org/wiki/Q43035","display_name":"Electrical engineering","level":1,"score":0.173417329788208},{"id":"https://openalex.org/C127413603","wikidata":"https://www.wikidata.org/wiki/Q11023","display_name":"Engineering","level":0,"score":0.16063496470451355},{"id":"https://openalex.org/C165801399","wikidata":"https://www.wikidata.org/wiki/Q25428","display_name":"Voltage","level":2,"score":0.14509451389312744},{"id":"https://openalex.org/C145598152","wikidata":"https://www.wikidata.org/wiki/Q176097","display_name":"Field-effect transistor","level":4,"score":0.11493027210235596}],"mesh":[],"locations_count":2,"locations":[{"id":"doi:10.1088/1674-4926/34/12/124002","doi":"https://doi.org/10.1088/1674-4926/34/12/124002","is_oa":true,"landing_page_url":"https://doi.org/10.1088/1674-4926/34/12/124002","pdf_url":"https://iopscience.iop.org/article/10.1088/1674-4926/34/12/124002/pdf","source":{"id":"https://openalex.org/S52834336","display_name":"Journal of Semiconductors","issn_l":"1674-4926","issn":["1674-4926","2058-6140"],"is_oa":false,"is_in_doaj":false,"is_core":true,"listed_in":["cwts-core","dongbi-b","jufo-1","poland-40","russia-white-list-2"],"host_organization":"https://openalex.org/P4310320083","host_organization_name":"IOP Publishing","host_organization_lineage":["https://openalex.org/P4310320083","https://openalex.org/P4310311669"],"host_organization_lineage_names":["IOP Publishing","Institute of Physics"],"type":"journal"},"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"Journal of Semiconductors","raw_type":"journal-article"},{"id":"mag:2283301676","doi":null,"is_oa":false,"landing_page_url":"http://www.cqvip.com/QK/94689X/201312/48031132.html","pdf_url":null,"source":{"id":"https://openalex.org/S4306544928","display_name":"\u534a\u5bfc\u4f53\u5b66\u62a5\uff1a\u82f1\u6587\u7248","issn_l":null,"issn":null,"is_oa":false,"is_in_doaj":false,"is_core":false,"listed_in":[],"host_organization":null,"host_organization_name":null,"host_organization_lineage":[],"host_organization_lineage_names":[],"type":"journal"},"license":null,"license_id":null,"version":null,"is_accepted":false,"is_published":false,"raw_source_name":"\u534a\u5bfc\u4f53\u5b66\u62a5\uff1a\u82f1\u6587\u7248","raw_type":null}],"best_oa_location":{"id":"doi:10.1088/1674-4926/34/12/124002","doi":"https://doi.org/10.1088/1674-4926/34/12/124002","is_oa":true,"landing_page_url":"https://doi.org/10.1088/1674-4926/34/12/124002","pdf_url":"https://iopscience.iop.org/article/10.1088/1674-4926/34/12/124002/pdf","source":{"id":"https://openalex.org/S52834336","display_name":"Journal of Semiconductors","issn_l":"1674-4926","issn":["1674-4926","2058-6140"],"is_oa":false,"is_in_doaj":false,"is_core":true,"listed_in":["cwts-core","dongbi-b","jufo-1","poland-40","russia-white-list-2"],"host_organization":"https://openalex.org/P4310320083","host_organization_name":"IOP Publishing","host_organization_lineage":["https://openalex.org/P4310320083","https://openalex.org/P4310311669"],"host_organization_lineage_names":["IOP Publishing","Institute of Physics"],"type":"journal"},"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"Journal of Semiconductors","raw_type":"journal-article"},"sustainable_development_goals":[],"sustainable_development_goals_aurora":[],"study_designs":[],"awards":[],"funders":[],"has_content":{"grobid_xml":true,"pdf":true},"content_urls":{"pdf":"https://content.openalex.org/works/W2201266887.pdf","grobid_xml":"https://content.openalex.org/works/W2201266887.grobid-xml"},"referenced_works_count":18,"referenced_works":["https://openalex.org/W1646294624","https://openalex.org/W1971283718","https://openalex.org/W1975600850","https://openalex.org/W1998107126","https://openalex.org/W2002842999","https://openalex.org/W2036488529","https://openalex.org/W2047118916","https://openalex.org/W2078806619","https://openalex.org/W2085583951","https://openalex.org/W2091767459","https://openalex.org/W2112467143","https://openalex.org/W2116796862","https://openalex.org/W2117894613","https://openalex.org/W2125398680","https://openalex.org/W2142356368","https://openalex.org/W2171105988","https://openalex.org/W2963112663","https://openalex.org/W3099612905"],"related_works":["https://openalex.org/W1971800287","https://openalex.org/W2243663835","https://openalex.org/W2033944471","https://openalex.org/W2063661925","https://openalex.org/W2028761908","https://openalex.org/W2316840220","https://openalex.org/W2198219252","https://openalex.org/W1965844320","https://openalex.org/W3035456133","https://openalex.org/W2067316052"],"abstract_inverted_index":{"The":[0,52,180],"effects":[1,133],"of":[2,62,73,128,146,191,197],"linear":[3,100,150,167],"doping":[4,101,151,168],"profile":[5,152],"near":[6],"the":[7,13,69,93,105,114,123,160,195],"source":[8],"and":[9,15,23,108,130,149,173,188,193],"drain":[10],"contacts":[11],"on":[12,41,117],"switching":[14,109,174],"high-frequency":[16,172],"characteristics":[17],"for":[18,186,199],"conventional":[19],"single-material-gate":[20],"CNTFET":[21,25,141],"(C-CNTFET)":[22],"hetero-material-gate":[24],"(HMG-CNTFET)":[26],"have":[27],"been":[28,87,154],"theoretically":[29],"investigated":[30],"by":[31],"using":[32],"a":[33,58,78,83,98,139,144],"quantum":[34],"kinetic":[35],"model.":[36],"This":[37],"model":[38],"is":[39,157],"based":[40],"two-dimensional":[42],"non-equilibrium":[43],"Green's":[44],"functions":[45],"(NEGF)":[46],"solved":[47],"self-consistently":[48],"with":[49,65,143,164],"Poisson's":[50],"equations.":[51],"simulation":[53,181],"results":[54,95],"show":[55],"that":[56,97,159],"at":[57],"CNT":[59],"channel":[60],"length":[61,102,169],"20":[63],"nm":[64],"chirality":[66],"(7,":[67],"0),":[68],"intrinsic":[70],"cutoff":[71,106],"frequency":[72,107],"C-CNTFETs":[74],"reaches":[75],"up":[76],"to":[77,178],"few":[79],"THz.":[80],"In":[81],"addition,":[82],"comparison":[84],"study":[85,182],"has":[86,113,153,170],"performed":[88],"between":[89],"C-and":[90],"HMG-CNTFETs.":[91],"For":[92],"C-CNTFET,":[94],"reveal":[96],"longer":[99],"can":[103],"improve":[104,122],"speed.":[110],"However,":[111],"it":[112],"reverse":[115],"effect":[116],"on/off":[118,124],"current":[119,125],"ratios.":[120],"To":[121],"ratios":[126],"performance":[127],"CNTFETs":[129,192,198],"overcome":[131],"short-channel":[132],"(SCEs)":[134],"in":[135],"high-performance":[136,190],"device":[137],"applications,":[138],"novel":[140],"structure":[142,162],"combination":[145],"an":[147,165],"HMG":[148,161],"proposed.":[155],"It":[156],"demonstrated":[158],"design":[163],"optimized":[166],"improved":[171],"performances":[175],"as":[176],"compared":[177],"C-CNTFETs.":[179],"may":[183],"be":[184],"useful":[185],"understanding":[187],"optimizing":[189],"assessing":[194],"reliability":[196],"prospective":[200],"applications.":[201]},"counts_by_year":[{"year":2020,"cited_by_count":2},{"year":2016,"cited_by_count":2},{"year":2015,"cited_by_count":1},{"year":2014,"cited_by_count":1}],"updated_date":"2026-10-14T16:39:01.820549","created_date":"2016-06-24T00:00:00"}