{"id":"https://openalex.org/W2184725533","doi":"https://doi.org/10.31438/trf.hh2010.28","title":"TEMPERATURE-STABLE HIGH-Q ALN-ON-SILICON RESONATORS WITH EMBEDDED ARRAY OF OXIDE PILLARS","display_name":"TEMPERATURE-STABLE HIGH-Q ALN-ON-SILICON RESONATORS WITH EMBEDDED ARRAY OF OXIDE PILLARS","publication_year":2010,"publication_date":"2010-06-06","ids":{"openalex":"https://openalex.org/W2184725533","doi":"https://doi.org/10.31438/trf.hh2010.28","mag":"2184725533"},"language":"en","primary_location":{"id":"doi:10.31438/trf.hh2010.28","doi":"https://doi.org/10.31438/trf.hh2010.28","is_oa":true,"landing_page_url":"https://doi.org/10.31438/trf.hh2010.28","pdf_url":"https://doi.org/10.31438/trf.hh2010.28","source":{"id":"https://openalex.org/S4306497755","display_name":"Solid-State Sensors, Actuators, and Microsystems Workshop (Hilton Head Workshop)","issn_l":null,"issn":null,"is_oa":false,"is_in_doaj":false,"is_core":true,"listed_in":["cwts-core"],"host_organization":null,"host_organization_name":null,"host_organization_lineage":[],"host_organization_lineage_names":[],"type":"conference"},"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"2010 Solid-State, Actuators, and Microsystems Workshop Technical Digest","raw_type":"proceedings-article"},"volume":null,"type":"conference-paper","indexed_in":["crossref"],"open_access":{"is_oa":true,"oa_status":"bronze","oa_url":"https://doi.org/10.31438/trf.hh2010.28","any_repository_has_fulltext":false},"authorships":[{"author_position":"first","author":{"id":"https://openalex.org/A5036428386","display_name":"Roozbeh Tabrizian","orcid":"https://orcid.org/0000-0003-1245-8564","observed_orcids":["https://orcid.org/0000-0003-1245-8564"]},"institutions":[{"id":"https://openalex.org/I130701444","display_name":"Georgia Institute of Technology","ror":"https://ror.org/01zkghx44","country_code":"US","type":"education","lineage":["https://openalex.org/I130701444"]}],"countries":["US"],"is_corresponding":false,"raw_author_name":"R. Tabrizian","raw_affiliation_strings":["Georgia Institue of Technology, Atlanta, Georgia, USA"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Georgia Institue of Technology, Atlanta, Georgia, USA","institution_ids":["https://openalex.org/I130701444"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5064728183","display_name":"Giorgio Casinovi","orcid":null,"observed_orcids":[]},"institutions":[{"id":"https://openalex.org/I130701444","display_name":"Georgia Institute of Technology","ror":"https://ror.org/01zkghx44","country_code":"US","type":"education","lineage":["https://openalex.org/I130701444"]}],"countries":["US"],"is_corresponding":false,"raw_author_name":"G. Casinovi","raw_affiliation_strings":["Georgia Institue of Technology, Atlanta, Georgia, USA"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Georgia Institue of Technology, Atlanta, Georgia, USA","institution_ids":["https://openalex.org/I130701444"]}]},{"author_position":"last","author":{"id":"https://openalex.org/A5081523432","display_name":"Farrokh Ayazi","orcid":"https://orcid.org/0000-0002-4539-7393","observed_orcids":["https://orcid.org/0000-0002-4539-7393"]},"institutions":[{"id":"https://openalex.org/I130701444","display_name":"Georgia Institute of Technology","ror":"https://ror.org/01zkghx44","country_code":"US","type":"education","lineage":["https://openalex.org/I130701444"]}],"countries":["US"],"is_corresponding":false,"raw_author_name":"F. Ayazi","raw_affiliation_strings":["Georgia Institue of Technology, Atlanta, Georgia, USA"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Georgia Institue of Technology, Atlanta, Georgia, USA","institution_ids":["https://openalex.org/I130701444"]}]}],"institutions":[],"countries_distinct_count":1,"institutions_distinct_count":1,"corresponding_author_ids":[],"corresponding_institution_ids":["https://openalex.org/I130701444"],"apc_list":null,"apc_paid":null,"fwci":9.5694,"has_fulltext":true,"cited_by_count":24,"citation_normalized_percentile":{"value":0.98794451,"is_in_top_1_percent":false,"is_in_top_10_percent":true},"cited_by_percentile_year":{"min":88,"max":98},"biblio":{"volume":null,"issue":null,"first_page":"100","last_page":"101"},"is_retracted":false,"is_paratext":false,"is_xpac":false,"primary_topic":{"id":"https://openalex.org/T11160","display_name":"Acoustic Wave Resonator Technologies","score":1.0,"subfield":{"id":"https://openalex.org/subfields/2204","display_name":"Biomedical Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},"topics":[{"id":"https://openalex.org/T11160","display_name":"Acoustic Wave Resonator Technologies","score":1.0,"subfield":{"id":"https://openalex.org/subfields/2204","display_name":"Biomedical Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T10369","display_name":"Advanced MEMS and NEMS Technologies","score":9.999999747378752e-05,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T10662","display_name":"Ultrasonics and Acoustic Wave Propagation","score":0.0,"subfield":{"id":"https://openalex.org/subfields/2211","display_name":"Mechanics of Materials"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}}],"keywords":[{"id":"https://openalex.org/keywords/bulk-acoustic-wave-resonators","display_name":"bulk acoustic wave resonators","score":0.9710000157356262},{"id":"https://openalex.org/keywords/temperature-compensation","display_name":"temperature compensation","score":0.8309999704360962},{"id":"https://openalex.org/keywords/temperature-coefficient-of-frequency","display_name":"temperature coefficient of frequency","score":0.7480000257492065},{"id":"https://openalex.org/keywords/high-q-resonators","display_name":"high-Q resonators","score":0.8370000123977661},{"id":"https://openalex.org/keywords/frequency-drift","display_name":"frequency drift","score":0.6050000190734863},{"id":"https://openalex.org/keywords/composite-resonator","display_name":"composite resonator","score":0.6140000224113464},{"id":"https://openalex.org/keywords/power-handling","display_name":"power handling","score":0.5109999775886536},{"id":"https://openalex.org/keywords/linearity","display_name":"linearity","score":0.902999997138977}],"concepts":[{"id":"https://openalex.org/C97126364","wikidata":"https://www.wikidata.org/wiki/Q349669","display_name":"Resonator","level":2,"score":0.9184989929199219},{"id":"https://openalex.org/C544956773","wikidata":"https://www.wikidata.org/wiki/Q670","display_name":"Silicon","level":2,"score":0.8119312524795532},{"id":"https://openalex.org/C192562407","wikidata":"https://www.wikidata.org/wiki/Q228736","display_name":"Materials science","level":0,"score":0.7809050679206848},{"id":"https://openalex.org/C16643434","wikidata":"https://www.wikidata.org/wiki/Q898642","display_name":"Temperature coefficient","level":2,"score":0.7252081036567688},{"id":"https://openalex.org/C2777289219","wikidata":"https://www.wikidata.org/wiki/Q7632154","display_name":"Substrate (aquarium)","level":2,"score":0.665155291557312},{"id":"https://openalex.org/C49040817","wikidata":"https://www.wikidata.org/wiki/Q193091","display_name":"Optoelectronics","level":1,"score":0.6098863482475281},{"id":"https://openalex.org/C2779105228","wikidata":"https://www.wikidata.org/wiki/Q2286029","display_name":"Silicon oxide","level":4,"score":0.5164890289306641},{"id":"https://openalex.org/C2780023022","wikidata":"https://www.wikidata.org/wiki/Q1338171","display_name":"Compensation (psychology)","level":2,"score":0.45210641622543335},{"id":"https://openalex.org/C139210041","wikidata":"https://www.wikidata.org/wiki/Q2145840","display_name":"Resonance (particle physics)","level":2,"score":0.44869542121887207},{"id":"https://openalex.org/C77170095","wikidata":"https://www.wikidata.org/wiki/Q1753188","display_name":"Linearity","level":2,"score":0.4411277174949646},{"id":"https://openalex.org/C2779089622","wikidata":"https://www.wikidata.org/wiki/Q116269","display_name":"Silicon dioxide","level":2,"score":0.4207148551940918},{"id":"https://openalex.org/C24326235","wikidata":"https://www.wikidata.org/wiki/Q126095","display_name":"Electronic engineering","level":1,"score":0.27979350090026855},{"id":"https://openalex.org/C159985019","wikidata":"https://www.wikidata.org/wiki/Q181790","display_name":"Composite material","level":1,"score":0.15713787078857422},{"id":"https://openalex.org/C2777431650","wikidata":"https://www.wikidata.org/wiki/Q413828","display_name":"Silicon nitride","level":3,"score":0.09650814533233643},{"id":"https://openalex.org/C121332964","wikidata":"https://www.wikidata.org/wiki/Q413","display_name":"Physics","level":0,"score":0.07637524604797363},{"id":"https://openalex.org/C127313418","wikidata":"https://www.wikidata.org/wiki/Q1069","display_name":"Geology","level":0,"score":0.0},{"id":"https://openalex.org/C109214941","wikidata":"https://www.wikidata.org/wiki/Q18334","display_name":"Particle physics","level":1,"score":0.0},{"id":"https://openalex.org/C127413603","wikidata":"https://www.wikidata.org/wiki/Q11023","display_name":"Engineering","level":0,"score":0.0},{"id":"https://openalex.org/C11171543","wikidata":"https://www.wikidata.org/wiki/Q41630","display_name":"Psychoanalysis","level":1,"score":0.0},{"id":"https://openalex.org/C111368507","wikidata":"https://www.wikidata.org/wiki/Q43518","display_name":"Oceanography","level":1,"score":0.0},{"id":"https://openalex.org/C15744967","wikidata":"https://www.wikidata.org/wiki/Q9418","display_name":"Psychology","level":0,"score":0.0}],"mesh":[],"locations_count":1,"locations":[{"id":"doi:10.31438/trf.hh2010.28","doi":"https://doi.org/10.31438/trf.hh2010.28","is_oa":true,"landing_page_url":"https://doi.org/10.31438/trf.hh2010.28","pdf_url":"https://doi.org/10.31438/trf.hh2010.28","source":{"id":"https://openalex.org/S4306497755","display_name":"Solid-State Sensors, Actuators, and Microsystems Workshop (Hilton Head Workshop)","issn_l":null,"issn":null,"is_oa":false,"is_in_doaj":false,"is_core":true,"listed_in":["cwts-core"],"host_organization":null,"host_organization_name":null,"host_organization_lineage":[],"host_organization_lineage_names":[],"type":"conference"},"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"2010 Solid-State, Actuators, and Microsystems Workshop Technical Digest","raw_type":"proceedings-article"}],"best_oa_location":{"id":"doi:10.31438/trf.hh2010.28","doi":"https://doi.org/10.31438/trf.hh2010.28","is_oa":true,"landing_page_url":"https://doi.org/10.31438/trf.hh2010.28","pdf_url":"https://doi.org/10.31438/trf.hh2010.28","source":{"id":"https://openalex.org/S4306497755","display_name":"Solid-State Sensors, Actuators, and Microsystems Workshop (Hilton Head Workshop)","issn_l":null,"issn":null,"is_oa":false,"is_in_doaj":false,"is_core":true,"listed_in":["cwts-core"],"host_organization":null,"host_organization_name":null,"host_organization_lineage":[],"host_organization_lineage_names":[],"type":"conference"},"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"2010 Solid-State, Actuators, and Microsystems Workshop Technical Digest","raw_type":"proceedings-article"},"sustainable_development_goals":[],"study_designs":[],"awards":[],"funders":[],"has_content":{"grobid_xml":true,"pdf":true},"content_urls":{"pdf":"https://content.openalex.org/works/W2184725533.pdf","grobid_xml":"https://content.openalex.org/works/W2184725533.grobid-xml"},"referenced_works_count":3,"referenced_works":["https://openalex.org/W2074122205","https://openalex.org/W2107391746","https://openalex.org/W2929934557"],"related_works":["https://openalex.org/W2589888568","https://openalex.org/W2044761720","https://openalex.org/W3126903387","https://openalex.org/W1997316729","https://openalex.org/W2035868474","https://openalex.org/W2166078888","https://openalex.org/W2295949699","https://openalex.org/W48791419","https://openalex.org/W4294334408","https://openalex.org/W4415222777"],"abstract_inverted_index":{"This":[0],"paper":[1],"reports":[2],"on":[3],"a":[4,36,40,47,52],"new":[5],"temperature":[6,42,61],"compensation":[7,78],"technique":[8,79],"for":[9],"high-Q":[10],"AlN-on-Silicon":[11],"bulk":[12,83],"acoustic":[13,84],"wave":[14],"resonators.A":[15],"uniform":[16],"array":[17],"of":[18,31,44,50,56,63],"silicon":[19,29,88],"dioxide":[20],"(SiO":[21],"2":[22],")":[23],"pillars":[24],"are":[25],"formed":[26],"in":[27],"the":[28,32,60],"body":[30],"resonator":[33,38],"to":[34,66,82],"generate":[35],"composite":[37],"with":[39,86],"near-zero":[41],"coefficient":[43],"frequency":[45,49,54],"(TCF).At":[46],"resonance":[48],"24MHz,":[51],"total":[53],"drift":[55],"90":[57],"ppm":[58],"over":[59],"range":[62],"-20":[64],"\u00b0C":[65,68],"100":[67],"was":[69],"measured":[70],"while":[71],"Q":[72,93],"exceeded":[73],"10,000":[74],"at":[75],"all":[76],"temperatures.This":[77],"is":[80],"applicable":[81],"resonators":[85],"thick":[87],"substrate":[89],"that":[90],"demonstrate":[91],"high":[92],"as":[94,96],"well":[95],"good":[97],"power":[98],"handling":[99],"and":[100],"linearity.":[101]},"counts_by_year":[{"year":2026,"cited_by_count":1},{"year":2024,"cited_by_count":1},{"year":2023,"cited_by_count":1},{"year":2021,"cited_by_count":1},{"year":2017,"cited_by_count":1},{"year":2016,"cited_by_count":1},{"year":2015,"cited_by_count":1},{"year":2014,"cited_by_count":4},{"year":2013,"cited_by_count":4},{"year":2012,"cited_by_count":4}],"updated_date":"2026-10-30T12:39:25.321706","created_date":"2016-06-24T00:00:00"}