{"id":"https://openalex.org/W2172228081","doi":"https://doi.org/10.1557/proc-220-285","title":"Growth of Si1\u2212xGex, Strained Layers Using Atmospheric-Pressure CVD","display_name":"Growth of Si1\u2212xGex, Strained Layers Using Atmospheric-Pressure CVD","publication_year":1991,"publication_date":"1991-01-01","ids":{"openalex":"https://openalex.org/W2172228081","doi":"https://doi.org/10.1557/proc-220-285","mag":"2172228081"},"language":"en","primary_location":{"id":"doi:10.1557/proc-220-285","doi":"https://doi.org/10.1557/proc-220-285","is_oa":false,"landing_page_url":"https://doi.org/10.1557/proc-220-285","pdf_url":null,"source":{"id":"https://openalex.org/S2530005873","display_name":"MRS Proceedings","issn_l":"0272-9172","issn":["0272-9172","1946-4274"],"is_oa":false,"is_in_doaj":false,"is_core":true,"listed_in":["cwts-core","jufo-1","norway-1"],"host_organization":"https://openalex.org/P4310311721","host_organization_name":"Cambridge University Press","host_organization_lineage":["https://openalex.org/P4310311721","https://openalex.org/P4310311702"],"host_organization_lineage_names":["Cambridge University Press","University of Cambridge"],"type":"journal"},"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"MRS Proceedings","raw_type":"journal-article"},"volume":null,"type":"article","indexed_in":["crossref"],"open_access":{"is_oa":false,"oa_status":"closed","oa_url":null,"any_repository_has_fulltext":false},"authorships":[{"author_position":"first","author":{"id":"https://openalex.org/A5039524036","display_name":"Fereydoon Namavar","orcid":null,"observed_orcids":[]},"institutions":[{"id":"https://openalex.org/I4210163472","display_name":"Spire Corporation (United States)","ror":"https://ror.org/02yyv4c82","country_code":"US","type":"company","lineage":["https://openalex.org/I4210163472"]}],"countries":["US"],"is_corresponding":false,"raw_author_name":"F. Namavar","raw_affiliation_strings":["Spire Corporation, Bedford, MA, USA"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Spire Corporation, Bedford, MA, USA","institution_ids":["https://openalex.org/I4210163472"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5046039189","display_name":"J. M. Manke","orcid":null,"observed_orcids":[]},"institutions":[{"id":"https://openalex.org/I4210163472","display_name":"Spire Corporation (United States)","ror":"https://ror.org/02yyv4c82","country_code":"US","type":"company","lineage":["https://openalex.org/I4210163472"]}],"countries":["US"],"is_corresponding":false,"raw_author_name":"J. M. Manke","raw_affiliation_strings":["Spire Corporation, Bedford, MA, USA"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Spire Corporation, Bedford, MA, USA","institution_ids":["https://openalex.org/I4210163472"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5027374021","display_name":"Eric P. Kvam","orcid":null,"observed_orcids":[]},"institutions":[{"id":"https://openalex.org/I219193219","display_name":"Purdue University West Lafayette","ror":"https://ror.org/02dqehb95","country_code":"US","type":"education","lineage":["https://openalex.org/I219193219"]}],"countries":["US"],"is_corresponding":false,"raw_author_name":"E. P. Kvam","raw_affiliation_strings":["Purdue University, West Lafayette, IN, USA"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Purdue University, West Lafayette, IN, USA","institution_ids":["https://openalex.org/I219193219"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5002543443","display_name":"Michael M. Sanfacon","orcid":null,"observed_orcids":[]},"institutions":[{"id":"https://openalex.org/I4210163472","display_name":"Spire Corporation (United States)","ror":"https://ror.org/02yyv4c82","country_code":"US","type":"company","lineage":["https://openalex.org/I4210163472"]}],"countries":["US"],"is_corresponding":false,"raw_author_name":"M. M. Sanfacon","raw_affiliation_strings":["Spire Corporation, Bedford, MA, USA"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Spire Corporation, Bedford, MA, USA","institution_ids":["https://openalex.org/I4210163472"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5089654088","display_name":"Clive H. Perry","orcid":null,"observed_orcids":[]},"institutions":[{"id":"https://openalex.org/I12912129","display_name":"Northeastern University","ror":"https://ror.org/04t5xt781","country_code":"US","type":"education","lineage":["https://openalex.org/I12912129"]}],"countries":["US"],"is_corresponding":false,"raw_author_name":"C. H. Perry","raw_affiliation_strings":["Northeastern University, Boston, MA, USA"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Northeastern University, Boston, MA, USA","institution_ids":["https://openalex.org/I12912129"]}]},{"author_position":"last","author":{"id":"https://openalex.org/A5045783899","display_name":"Nader M. Kalkhoran","orcid":null,"observed_orcids":[]},"institutions":[{"id":"https://openalex.org/I4210163472","display_name":"Spire Corporation (United States)","ror":"https://ror.org/02yyv4c82","country_code":"US","type":"company","lineage":["https://openalex.org/I4210163472"]}],"countries":["US"],"is_corresponding":false,"raw_author_name":"N. M. Kalkhoran","raw_affiliation_strings":["Spire Corporation, Bedford, MA, USA"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Spire Corporation, Bedford, MA, USA","institution_ids":["https://openalex.org/I4210163472"]}]}],"institutions":[],"countries_distinct_count":1,"institutions_distinct_count":3,"corresponding_author_ids":[],"corresponding_institution_ids":[],"apc_list":null,"apc_paid":null,"fwci":1.6028,"has_fulltext":false,"cited_by_count":9,"citation_normalized_percentile":{"value":0.82863507,"is_in_top_1_percent":false,"is_in_top_10_percent":false},"cited_by_percentile_year":null,"biblio":{"volume":"220","issue":null,"first_page":null,"last_page":null},"is_retracted":false,"is_paratext":false,"is_xpac":false,"primary_topic":{"id":"https://openalex.org/T11853","display_name":"Semiconductor materials and interfaces","score":0.5253999829292297,"subfield":{"id":"https://openalex.org/subfields/3107","display_name":"Atomic and Molecular Physics, and Optics"},"field":{"id":"https://openalex.org/fields/31","display_name":"Physics and Astronomy"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},"topics":[{"id":"https://openalex.org/T11853","display_name":"Semiconductor materials and interfaces","score":0.5253999829292297,"subfield":{"id":"https://openalex.org/subfields/3107","display_name":"Atomic and Molecular Physics, and Optics"},"field":{"id":"https://openalex.org/fields/31","display_name":"Physics and Astronomy"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T10472","display_name":"Semiconductor materials and devices","score":0.4018999934196472,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T10558","display_name":"Advancements in Semiconductor Devices and Circuit Design","score":0.03620000183582306,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}}],"keywords":[{"id":"https://openalex.org/keywords/sige-epitaxial-layers","display_name":"SiGe epitaxial layers","score":0.8769999742507935},{"id":"https://openalex.org/keywords/strained-layers","display_name":"strained layers","score":0.8930000066757202},{"id":"https://openalex.org/keywords/atmospheric-pressure-chemical-vapor-deposition","display_name":"atmospheric pressure chemical vapor deposition","score":0.9739999771118164},{"id":"https://openalex.org/keywords/germanium-on-silicon","display_name":"germanium on silicon","score":0.6650000214576721},{"id":"https://openalex.org/keywords/dislocation-density","display_name":"dislocation density","score":0.6069999933242798},{"id":"https://openalex.org/keywords/defect-density","display_name":"defect density","score":0.7639999985694885},{"id":"https://openalex.org/keywords/oxygen-concentration","display_name":"oxygen concentration","score":0.5059999823570251},{"id":"https://openalex.org/keywords/growth-temperature","display_name":"growth temperature","score":0.5979999899864197}],"concepts":[{"id":"https://openalex.org/C192562407","wikidata":"https://www.wikidata.org/wiki/Q228736","display_name":"Materials science","level":0,"score":0.8875970244407654},{"id":"https://openalex.org/C110738630","wikidata":"https://www.wikidata.org/wiki/Q1135540","display_name":"Epitaxy","level":3,"score":0.7438836097717285},{"id":"https://openalex.org/C146088050","wikidata":"https://www.wikidata.org/wiki/Q744818","display_name":"Transmission electron microscopy","level":2,"score":0.605351448059082},{"id":"https://openalex.org/C40003534","wikidata":"https://www.wikidata.org/wiki/Q862228","display_name":"Raman spectroscopy","level":2,"score":0.5676155090332031},{"id":"https://openalex.org/C57410435","wikidata":"https://www.wikidata.org/wiki/Q505668","display_name":"Chemical vapor deposition","level":2,"score":0.5643397569656372},{"id":"https://openalex.org/C159122135","wikidata":"https://www.wikidata.org/wiki/Q737571","display_name":"Dislocation","level":2,"score":0.5474768280982971},{"id":"https://openalex.org/C113196181","wikidata":"https://www.wikidata.org/wiki/Q485223","display_name":"Analytical Chemistry (journal)","level":2,"score":0.5355532169342041},{"id":"https://openalex.org/C550623735","wikidata":"https://www.wikidata.org/wiki/Q867","display_name":"Germanium","level":3,"score":0.47404977679252625},{"id":"https://openalex.org/C544956773","wikidata":"https://www.wikidata.org/wiki/Q670","display_name":"Silicon","level":2,"score":0.4414587616920471},{"id":"https://openalex.org/C200239111","wikidata":"https://www.wikidata.org/wiki/Q81809","display_name":"Atmospheric pressure","level":2,"score":0.4404391944408417},{"id":"https://openalex.org/C207114421","wikidata":"https://www.wikidata.org/wiki/Q133900","display_name":"Diffraction","level":2,"score":0.4153621792793274},{"id":"https://openalex.org/C8010536","wikidata":"https://www.wikidata.org/wiki/Q160398","display_name":"Crystallography","level":1,"score":0.32983535528182983},{"id":"https://openalex.org/C49040817","wikidata":"https://www.wikidata.org/wiki/Q193091","display_name":"Optoelectronics","level":1,"score":0.31660962104797363},{"id":"https://openalex.org/C2779227376","wikidata":"https://www.wikidata.org/wiki/Q6505497","display_name":"Layer (electronics)","level":2,"score":0.26841339468955994},{"id":"https://openalex.org/C171250308","wikidata":"https://www.wikidata.org/wiki/Q11468","display_name":"Nanotechnology","level":1,"score":0.17753270268440247},{"id":"https://openalex.org/C120665830","wikidata":"https://www.wikidata.org/wiki/Q14620","display_name":"Optics","level":1,"score":0.17200633883476257},{"id":"https://openalex.org/C159985019","wikidata":"https://www.wikidata.org/wiki/Q181790","display_name":"Composite material","level":1,"score":0.1512596607208252},{"id":"https://openalex.org/C111368507","wikidata":"https://www.wikidata.org/wiki/Q43518","display_name":"Oceanography","level":1,"score":0.0},{"id":"https://openalex.org/C121332964","wikidata":"https://www.wikidata.org/wiki/Q413","display_name":"Physics","level":0,"score":0.0},{"id":"https://openalex.org/C185592680","wikidata":"https://www.wikidata.org/wiki/Q2329","display_name":"Chemistry","level":0,"score":0.0},{"id":"https://openalex.org/C43617362","wikidata":"https://www.wikidata.org/wiki/Q170050","display_name":"Chromatography","level":1,"score":0.0},{"id":"https://openalex.org/C127313418","wikidata":"https://www.wikidata.org/wiki/Q1069","display_name":"Geology","level":0,"score":0.0}],"mesh":[],"locations_count":1,"locations":[{"id":"doi:10.1557/proc-220-285","doi":"https://doi.org/10.1557/proc-220-285","is_oa":false,"landing_page_url":"https://doi.org/10.1557/proc-220-285","pdf_url":null,"source":{"id":"https://openalex.org/S2530005873","display_name":"MRS Proceedings","issn_l":"0272-9172","issn":["0272-9172","1946-4274"],"is_oa":false,"is_in_doaj":false,"is_core":true,"listed_in":["cwts-core","jufo-1","norway-1"],"host_organization":"https://openalex.org/P4310311721","host_organization_name":"Cambridge University Press","host_organization_lineage":["https://openalex.org/P4310311721","https://openalex.org/P4310311702"],"host_organization_lineage_names":["Cambridge University Press","University of Cambridge"],"type":"journal"},"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"MRS Proceedings","raw_type":"journal-article"}],"best_oa_location":null,"sustainable_development_goals":[],"study_designs":[],"awards":[],"funders":[{"id":"https://openalex.org/F4320306076","display_name":"National Science Foundation","ror":"https://ror.org/021nxhr62"}],"has_content":{"pdf":false,"grobid_xml":false},"content_urls":null,"referenced_works_count":20,"referenced_works":["https://openalex.org/W1965527387","https://openalex.org/W1972836222","https://openalex.org/W1988873342","https://openalex.org/W1991286052","https://openalex.org/W1993712129","https://openalex.org/W1996014669","https://openalex.org/W2028006291","https://openalex.org/W2039300797","https://openalex.org/W2061266999","https://openalex.org/W2065404411","https://openalex.org/W2065467487","https://openalex.org/W2075119617","https://openalex.org/W2076338761","https://openalex.org/W2083972074","https://openalex.org/W2087217288","https://openalex.org/W2093327252","https://openalex.org/W2118946774","https://openalex.org/W2327958436","https://openalex.org/W2550885412","https://openalex.org/W4250909095"],"related_works":["https://openalex.org/W2325131034","https://openalex.org/W2153298634","https://openalex.org/W2044795334","https://openalex.org/W2009867101","https://openalex.org/W2036706705","https://openalex.org/W2463564473","https://openalex.org/W2061274179","https://openalex.org/W2088141181","https://openalex.org/W1997600436","https://openalex.org/W1971404541"],"abstract_inverted_index":null,"counts_by_year":[],"updated_date":"2026-09-22T06:50:58.402377","created_date":"2016-06-24T00:00:00"}