{"id":"https://openalex.org/W2170921171","doi":"https://doi.org/10.1109/ias.1990.152401","title":"Static and dynamic behaviour of paralleled IGBTs","display_name":"Static and dynamic behaviour of paralleled IGBTs","publication_year":2002,"publication_date":"2002-12-04","ids":{"openalex":"https://openalex.org/W2170921171","doi":"https://doi.org/10.1109/ias.1990.152401","mag":"2170921171"},"language":"en","primary_location":{"id":"doi:10.1109/ias.1990.152401","doi":"https://doi.org/10.1109/ias.1990.152401","is_oa":false,"landing_page_url":"https://doi.org/10.1109/ias.1990.152401","pdf_url":null,"source":{"id":"https://openalex.org/S4210210408","display_name":"IEEE Industry Applications Society Annual Meeting (IAS)","issn_l":"0197-2618","issn":["0197-2618","2576-702X"],"is_oa":false,"is_in_doaj":false,"is_core":false,"listed_in":["jufo-1","norway-1"],"host_organization":"https://openalex.org/P4310319808","host_organization_name":"Institute of Electrical and Electronics Engineers","host_organization_lineage":["https://openalex.org/P4310319808"],"host_organization_lineage_names":["Institute of Electrical and Electronics Engineers"],"type":"conference"},"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"Conference Record of the 1990 IEEE Industry Applications Society Annual Meeting","raw_type":"proceedings-article"},"volume":null,"type":"conference-paper","is_traditional":true,"indexed_in":["crossref"],"open_access":{"is_oa":false,"oa_status":"closed","oa_url":null,"any_repository_has_fulltext":false},"authorships":[{"author_position":"first","author":{"id":"https://openalex.org/A5085603679","display_name":"Romeo Letor","orcid":null,"observed_orcids":[]},"institutions":[],"countries":[],"is_corresponding":true,"raw_author_name":"R. Letor","raw_affiliation_strings":["Advanced Application Engineer, SGS-Thomson Microelectronics, Catania, Italy"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Advanced Application Engineer, SGS-Thomson Microelectronics, Catania, Italy","institution_ids":[]}]}],"institutions":[],"countries_distinct_count":0,"institutions_distinct_count":0,"corresponding_author_ids":["https://openalex.org/A5085603679"],"corresponding_institution_ids":[],"apc_list":null,"apc_paid":null,"fwci":4.1299,"has_fulltext":false,"cited_by_count":24,"citation_normalized_percentile":{"value":0.9529463,"is_in_top_1_percent":false,"is_in_top_10_percent":true},"cited_by_percentile_year":{"min":88,"max":96},"biblio":{"volume":null,"issue":null,"first_page":"1604","last_page":"1612"},"is_retracted":false,"is_paratext":false,"is_xpac":false,"primary_topic":{"id":"https://openalex.org/T10361","display_name":"Silicon Carbide Semiconductor Technologies","score":0.9980000257492065,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},"topics":[{"id":"https://openalex.org/T10361","display_name":"Silicon Carbide Semiconductor Technologies","score":0.9980000257492065,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T10228","display_name":"Multilevel Inverters and Converters","score":0.0005000000237487257,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T13093","display_name":"Electric Power Systems and Control","score":0.00019999999494757503,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}}],"keywords":[{"id":"https://openalex.org/keywords/igbt","display_name":"IGBT","score":0.9620000123977661},{"id":"https://openalex.org/keywords/current-sharing","display_name":"current sharing","score":0.7519999742507935},{"id":"https://openalex.org/keywords/thermal-stability","display_name":"thermal stability","score":0.9190000295639038},{"id":"https://openalex.org/keywords/switching-behavior","display_name":"switching behavior","score":0.9359999895095825},{"id":"https://openalex.org/keywords/printed-circuit-board-design","display_name":"printed circuit board design","score":0.7749999761581421},{"id":"https://openalex.org/keywords/drive-circuit","display_name":"drive circuit","score":0.9120000004768372}],"concepts":[{"id":"https://openalex.org/C28285623","wikidata":"https://www.wikidata.org/wiki/Q176110","display_name":"Insulated-gate bipolar transistor","level":3,"score":0.6501505970954895},{"id":"https://openalex.org/C23061349","wikidata":"https://www.wikidata.org/wiki/Q188946","display_name":"Bipolar junction transistor","level":4,"score":0.6472838521003723},{"id":"https://openalex.org/C186937647","wikidata":"https://www.wikidata.org/wiki/Q1796959","display_name":"Heat sink","level":2,"score":0.6394599080085754},{"id":"https://openalex.org/C119599485","wikidata":"https://www.wikidata.org/wiki/Q43035","display_name":"Electrical engineering","level":1,"score":0.48060342669487},{"id":"https://openalex.org/C172385210","wikidata":"https://www.wikidata.org/wiki/Q5339","display_name":"Transistor","level":3,"score":0.4800592362880707},{"id":"https://openalex.org/C41008148","wikidata":"https://www.wikidata.org/wiki/Q21198","display_name":"Computer science","level":0,"score":0.4536364674568176},{"id":"https://openalex.org/C127413603","wikidata":"https://www.wikidata.org/wiki/Q11023","display_name":"Engineering","level":0,"score":0.27672815322875977},{"id":"https://openalex.org/C165801399","wikidata":"https://www.wikidata.org/wiki/Q25428","display_name":"Voltage","level":2,"score":0.21673741936683655}],"mesh":[],"locations_count":1,"locations":[{"id":"doi:10.1109/ias.1990.152401","doi":"https://doi.org/10.1109/ias.1990.152401","is_oa":false,"landing_page_url":"https://doi.org/10.1109/ias.1990.152401","pdf_url":null,"source":{"id":"https://openalex.org/S4210210408","display_name":"IEEE Industry Applications Society Annual Meeting (IAS)","issn_l":"0197-2618","issn":["0197-2618","2576-702X"],"is_oa":false,"is_in_doaj":false,"is_core":false,"listed_in":["jufo-1","norway-1"],"host_organization":"https://openalex.org/P4310319808","host_organization_name":"Institute of Electrical and Electronics Engineers","host_organization_lineage":["https://openalex.org/P4310319808"],"host_organization_lineage_names":["Institute of Electrical and Electronics Engineers"],"type":"conference"},"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"Conference Record of the 1990 IEEE Industry Applications Society Annual Meeting","raw_type":"proceedings-article"}],"best_oa_location":null,"sustainable_development_goals":[{"display_name":"Affordable and clean energy","id":"https://metadata.un.org/sdg/7","score":0.8485000133514404},{"display_name":"Industry, innovation and infrastructure","id":"https://metadata.un.org/sdg/9","score":0.4943999946117401}],"study_designs":[],"awards":[],"funders":[],"has_content":{"grobid_xml":false,"pdf":false},"content_urls":null,"referenced_works_count":2,"referenced_works":["https://openalex.org/W2023627011","https://openalex.org/W2159226068"],"related_works":["https://openalex.org/W2158802943","https://openalex.org/W2003368116","https://openalex.org/W2544894380","https://openalex.org/W2569580435","https://openalex.org/W2134423082","https://openalex.org/W2376071246","https://openalex.org/W2162158800","https://openalex.org/W2080496812","https://openalex.org/W2369202224","https://openalex.org/W7084293703"],"abstract_inverted_index":{"The":[0,17],"current":[1],"balance,":[2],"thermal":[3],"stability,":[4],"and":[5,24],"switching":[6],"behavior":[7],"characteristics":[8],"of":[9,19,45],"parallel":[10,38],"insulated-gate":[11],"bipolar":[12],"transistors":[13],"(IGBTs)":[14],"are":[15,28],"analyzed.":[16],"influences":[18],"heat":[20],"sink":[21],"mounting,":[22],"lay-out,":[23],"the":[25,34],"drive":[26],"circuit":[27],"described":[29],"in":[30,49],"order":[31],"to":[32,37],"demonstrate":[33],"best":[35],"way":[36],"IGBTs":[39,48],"for":[40],"optimum":[41],"performance.":[42],"An":[43],"example":[44],"two":[46],"paralleled":[47],"a":[50],"fully":[51],"insulated":[52],"package":[53],"is":[54],"discussed.>":[55]},"counts_by_year":[{"year":2019,"cited_by_count":1},{"year":2018,"cited_by_count":1},{"year":2017,"cited_by_count":1},{"year":2016,"cited_by_count":2}],"updated_date":"2026-10-27T15:51:10.671819","created_date":"2016-06-24T00:00:00"}