{"id":"https://openalex.org/W2170021981","doi":"https://doi.org/10.1149/1.3483523","title":"Low-Temperature Direct Bonding of Borosilicate, Fused Silica, and Functional Coatings","display_name":"Low-Temperature Direct Bonding of Borosilicate, Fused Silica, and Functional Coatings","publication_year":2010,"publication_date":"2010-10-01","ids":{"openalex":"https://openalex.org/W2170021981","doi":"https://doi.org/10.1149/1.3483523","mag":"2170021981"},"language":"en","primary_location":{"id":"doi:10.1149/1.3483523","doi":"https://doi.org/10.1149/1.3483523","is_oa":false,"landing_page_url":"https://doi.org/10.1149/1.3483523","pdf_url":null,"source":{"id":"https://openalex.org/S4210205149","display_name":"ECS Transactions","issn_l":"1938-5862","issn":["1938-5862","1938-6737","2151-2051"],"is_oa":false,"is_in_doaj":false,"is_core":false,"listed_in":["norway-1","poland-20"],"host_organization":"https://openalex.org/P4310311669","host_organization_name":"Institute of Physics","host_organization_lineage":["https://openalex.org/P4310311669"],"host_organization_lineage_names":["Institute of Physics"],"type":"journal"},"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"ECS Transactions","raw_type":"journal-article"},"volume":null,"type":"conference-paper","is_traditional":true,"indexed_in":["crossref"],"open_access":{"is_oa":false,"oa_status":"closed","oa_url":null,"any_repository_has_fulltext":false},"authorships":[{"author_position":"first","author":{"id":"https://openalex.org/A5038336452","display_name":"Marko Eichler","orcid":"https://orcid.org/0000-0003-1493-7956","observed_orcids":["https://orcid.org/0000-0003-1493-7956"]},"institutions":[{"id":"https://openalex.org/I4210149217","display_name":"Fraunhofer Institute for Surface Engineering and Thin Films","ror":"https://ror.org/048vzmn57","country_code":"DE","type":"facility","lineage":["https://openalex.org/I4210149217","https://openalex.org/I4923324"]}],"countries":["DE"],"is_corresponding":false,"raw_author_name":"Marko Eichler","raw_affiliation_strings":["Fraunhofer Institute for Surface Engineering and Thin Films IST, Bienroder Weg 54 E, Braunschweig, 38108 Germany"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Fraunhofer Institute for Surface Engineering and Thin Films IST, Bienroder Weg 54 E, Braunschweig, 38108 Germany","institution_ids":["https://openalex.org/I4210149217"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5040815851","display_name":"Benedikt Michel","orcid":null,"observed_orcids":[]},"institutions":[{"id":"https://openalex.org/I94509681","display_name":"Technische Universit\u00e4t Braunschweig","ror":"https://ror.org/010nsgg66","country_code":"DE","type":"education","lineage":["https://openalex.org/I94509681"]}],"countries":["DE"],"is_corresponding":false,"raw_author_name":"Benedikt Michel","raw_affiliation_strings":["Technische Universit\u00e4t Braunschweig"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Technische Universit\u00e4t Braunschweig","institution_ids":["https://openalex.org/I94509681"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5088793528","display_name":"Philipp Hennecke","orcid":null,"observed_orcids":[]},"institutions":[{"id":"https://openalex.org/I4210149217","display_name":"Fraunhofer Institute for Surface Engineering and Thin Films","ror":"https://ror.org/048vzmn57","country_code":"DE","type":"facility","lineage":["https://openalex.org/I4210149217","https://openalex.org/I4923324"]}],"countries":["DE"],"is_corresponding":false,"raw_author_name":"Philipp Hennecke","raw_affiliation_strings":["Fraunhofer Institute for Surface Engineering and Thin Films IST"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Fraunhofer Institute for Surface Engineering and Thin Films IST","institution_ids":["https://openalex.org/I4210149217"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5103763794","display_name":"Markus Gabriel","orcid":null,"observed_orcids":[]},"institutions":[{"id":"https://openalex.org/I4210165638","display_name":"SUSS MicroTec (Germany)","ror":"https://ror.org/05vcgwf09","country_code":"DE","type":"company","lineage":["https://openalex.org/I4210165638"]}],"countries":["DE"],"is_corresponding":false,"raw_author_name":"Markus Gabriel","raw_affiliation_strings":["SUSS MicroTec Lithography GmbH"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"SUSS MicroTec Lithography GmbH","institution_ids":["https://openalex.org/I4210165638"]}]},{"author_position":"last","author":{"id":"https://openalex.org/A5062827039","display_name":"C.\u2010P. Klages","orcid":"https://orcid.org/0000-0001-5678-5845","observed_orcids":["https://orcid.org/0000-0001-5678-5845"]},"institutions":[{"id":"https://openalex.org/I4210149217","display_name":"Fraunhofer Institute for Surface Engineering and Thin Films","ror":"https://ror.org/048vzmn57","country_code":"DE","type":"facility","lineage":["https://openalex.org/I4210149217","https://openalex.org/I4923324"]}],"countries":["DE"],"is_corresponding":false,"raw_author_name":"Claus-Peter Klages","raw_affiliation_strings":["Fraunhofer Institute for Surface Engineering and Thin Films IST"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Fraunhofer Institute for Surface Engineering and Thin Films IST","institution_ids":["https://openalex.org/I4210149217"]}]}],"institutions":[],"countries_distinct_count":1,"institutions_distinct_count":3,"corresponding_author_ids":[],"corresponding_institution_ids":[],"apc_list":null,"apc_paid":null,"fwci":0.8556,"has_fulltext":false,"cited_by_count":17,"citation_normalized_percentile":{"value":0.73170313,"is_in_top_1_percent":false,"is_in_top_10_percent":false},"cited_by_percentile_year":{"min":88,"max":97},"biblio":{"volume":"33","issue":"4","first_page":"339","last_page":"348"},"is_retracted":false,"is_paratext":false,"is_xpac":false,"primary_topic":{"id":"https://openalex.org/T11527","display_name":"3D IC and TSV technologies","score":0.9980000257492065,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},"topics":[{"id":"https://openalex.org/T11527","display_name":"3D IC and TSV technologies","score":0.9980000257492065,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T10544","display_name":"Glass properties and applications","score":0.0005000000237487257,"subfield":{"id":"https://openalex.org/subfields/2503","display_name":"Ceramics and Composites"},"field":{"id":"https://openalex.org/fields/25","display_name":"Materials Science"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T10732","display_name":"Laser Material Processing Techniques","score":0.0003000000142492354,"subfield":{"id":"https://openalex.org/subfields/2209","display_name":"Industrial and Manufacturing Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}}],"keywords":[{"id":"https://openalex.org/keywords/borosilicate-glass","display_name":"borosilicate glass","score":0.8930000066757202},{"id":"https://openalex.org/keywords/fused-silica","display_name":"fused silica","score":0.9509999752044678},{"id":"https://openalex.org/keywords/plasma-surface-treatment","display_name":"plasma surface treatment","score":0.8830000162124634},{"id":"https://openalex.org/keywords/bond-energy","display_name":"bond energy","score":0.6880000233650208},{"id":"https://openalex.org/keywords/surface-energy","display_name":"surface energy","score":0.7020000219345093},{"id":"https://openalex.org/keywords/annealing-kinetics","display_name":"annealing kinetics","score":0.7990000247955322},{"id":"https://openalex.org/keywords/silicon-dioxide-thin-films","display_name":"SiO2 thin films","score":0.7110000252723694},{"id":"https://openalex.org/keywords/silicon-nitride-films","display_name":"silicon nitride thin films","score":0.8989999890327454},{"id":"https://openalex.org/keywords/silicon-oxynitride-thin-films","display_name":"silicon oxynitride films","score":0.9729999899864197},{"id":"https://openalex.org/keywords/indium-tin-oxide","display_name":"indium tin oxide","score":0.9139999747276306},{"id":"https://openalex.org/keywords/debonding","display_name":"debonding","score":0.6700000166893005},{"id":"https://openalex.org/keywords/power-spectral-density","display_name":"power spectral density","score":0.6909999847412109}],"concepts":[{"id":"https://openalex.org/C206802598","wikidata":"https://www.wikidata.org/wiki/Q1422588","display_name":"Borosilicate glass","level":2,"score":0.8797723054885864},{"id":"https://openalex.org/C192562407","wikidata":"https://www.wikidata.org/wiki/Q228736","display_name":"Materials science","level":0,"score":0.8310410380363464},{"id":"https://openalex.org/C201414436","wikidata":"https://www.wikidata.org/wiki/Q567503","display_name":"Anodic bonding","level":3,"score":0.7840327024459839},{"id":"https://openalex.org/C160671074","wikidata":"https://www.wikidata.org/wiki/Q267131","display_name":"Wafer","level":2,"score":0.6786074042320251},{"id":"https://openalex.org/C2779133538","wikidata":"https://www.wikidata.org/wiki/Q677010","display_name":"Wafer bonding","level":3,"score":0.6638953685760498},{"id":"https://openalex.org/C2777855556","wikidata":"https://www.wikidata.org/wiki/Q4339544","display_name":"Annealing (glass)","level":2,"score":0.5851805806159973},{"id":"https://openalex.org/C544956773","wikidata":"https://www.wikidata.org/wiki/Q670","display_name":"Silicon","level":2,"score":0.5755146145820618},{"id":"https://openalex.org/C2779089622","wikidata":"https://www.wikidata.org/wiki/Q116269","display_name":"Silicon dioxide","level":2,"score":0.5496193766593933},{"id":"https://openalex.org/C2777431650","wikidata":"https://www.wikidata.org/wiki/Q413828","display_name":"Silicon nitride","level":3,"score":0.45948681235313416},{"id":"https://openalex.org/C2779105228","wikidata":"https://www.wikidata.org/wiki/Q2286029","display_name":"Silicon oxide","level":4,"score":0.45611876249313354},{"id":"https://openalex.org/C2779667780","wikidata":"https://www.wikidata.org/wiki/Q18206302","display_name":"Crystalline silicon","level":3,"score":0.45540767908096313},{"id":"https://openalex.org/C2779851234","wikidata":"https://www.wikidata.org/wiki/Q50690","display_name":"Oxide","level":2,"score":0.42506444454193115},{"id":"https://openalex.org/C159985019","wikidata":"https://www.wikidata.org/wiki/Q181790","display_name":"Composite material","level":1,"score":0.4244714081287384},{"id":"https://openalex.org/C171250308","wikidata":"https://www.wikidata.org/wiki/Q11468","display_name":"Nanotechnology","level":1,"score":0.302919864654541},{"id":"https://openalex.org/C49040817","wikidata":"https://www.wikidata.org/wiki/Q193091","display_name":"Optoelectronics","level":1,"score":0.2763195037841797},{"id":"https://openalex.org/C191897082","wikidata":"https://www.wikidata.org/wiki/Q11467","display_name":"Metallurgy","level":1,"score":0.16314315795898438}],"mesh":[],"locations_count":3,"locations":[{"id":"doi:10.1149/1.3483523","doi":"https://doi.org/10.1149/1.3483523","is_oa":false,"landing_page_url":"https://doi.org/10.1149/1.3483523","pdf_url":null,"source":{"id":"https://openalex.org/S4210205149","display_name":"ECS Transactions","issn_l":"1938-5862","issn":["1938-5862","1938-6737","2151-2051"],"is_oa":false,"is_in_doaj":false,"is_core":false,"listed_in":["norway-1","poland-20"],"host_organization":"https://openalex.org/P4310311669","host_organization_name":"Institute of Physics","host_organization_lineage":["https://openalex.org/P4310311669"],"host_organization_lineage_names":["Institute of Physics"],"type":"journal"},"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"ECS Transactions","raw_type":"journal-article"},{"id":"pmh:oai:fraunhofer.de:N-151390","doi":null,"is_oa":false,"landing_page_url":"http://publica.fraunhofer.de/documents/N-151390.html","pdf_url":null,"source":{"id":"https://openalex.org/S4306400801","display_name":"Publikationsdatenbank der Fraunhofer-Gesellschaft (Fraunhofer-Gesellschaft)","issn_l":null,"issn":null,"is_oa":false,"is_in_doaj":false,"is_core":false,"listed_in":[],"host_organization":"https://openalex.org/I4923324","host_organization_name":"Fraunhofer-Gesellschaft","host_organization_lineage":["https://openalex.org/I4923324"],"host_organization_lineage_names":[],"type":"repository"},"license":null,"license_id":null,"version":"submittedVersion","is_accepted":false,"is_published":false,"raw_source_name":"Fraunhofer IST","raw_type":"Conference Paper"},{"id":"pmh:oai:publica.fraunhofer.de:publica/368127","doi":null,"is_oa":false,"landing_page_url":"https://publica.fraunhofer.de/handle/publica/368127","pdf_url":null,"source":{"id":"https://openalex.org/S4306400318","display_name":"Fraunhofer-Publica (Fraunhofer-Gesellschaft)","issn_l":null,"issn":null,"is_oa":false,"is_in_doaj":false,"is_core":false,"listed_in":[],"host_organization":"https://openalex.org/I4923324","host_organization_name":"Fraunhofer-Gesellschaft","host_organization_lineage":["https://openalex.org/I4923324"],"host_organization_lineage_names":[],"type":"repository"},"license":null,"license_id":null,"version":"submittedVersion","is_accepted":false,"is_published":false,"raw_source_name":null,"raw_type":"conference paper"}],"best_oa_location":null,"sustainable_development_goals":[],"study_designs":[],"awards":[],"funders":[{"id":"https://openalex.org/F4320311034","display_name":"Technische Universit\u00e4t Chemnitz","ror":"https://ror.org/00a208s56"},{"id":"https://openalex.org/F4320321469","display_name":"Bundesministerium f\u00fcr Wirtschaft und Technologie","ror":"https://ror.org/02vgg2808"}],"has_content":{"pdf":false,"grobid_xml":false},"content_urls":null,"referenced_works_count":0,"referenced_works":[],"related_works":["https://openalex.org/W7058459764","https://openalex.org/W2080514190","https://openalex.org/W2321476227","https://openalex.org/W1969575101","https://openalex.org/W2620942528","https://openalex.org/W4390972016","https://openalex.org/W2076747150","https://openalex.org/W2039562794","https://openalex.org/W2094948208","https://openalex.org/W2129084498"],"abstract_inverted_index":{"An":[0],"experimental":[1],"study":[2],"of":[3,6,22,62,76,80],"low-temperature":[4],"bonding":[5,64,84],"plasma-treated":[7],"borosilicate":[8],"glass":[9],"and":[10,29],"fused":[11],"silica":[12],"wafers":[13,72],"as":[14,16],"well":[15],"silicon":[17,23,25,27],"substrates":[18],"carrying":[19],"thin":[20],"films":[21],"dioxide,":[24],"nitride,":[26],"oxynitride,":[28],"indium":[30],"tin":[31],"oxide,":[32],"respectively,":[33],"is":[34],"reported.":[35],"Plasma":[36],"process":[37],"parameters":[38],"were":[39,50],"optimized":[40],"in":[41,53],"order":[42],"to":[43,58],"maximize":[44],"bond":[45],"energy.":[46],"Surface":[47],"energy":[48],"measurements":[49,69],"carried":[51],"out":[52],"situ":[54],"during":[55],"annealing,":[56],"helping":[57],"understand":[59],"the":[60,63,74,77],"kinetics":[61],"process.":[65],"Power":[66],"spectral":[67],"density":[68],"on":[70,83],"debonded":[71],"support":[73],"idea":[75],"strong":[78],"impact":[79],"micro-contact":[81],"formation":[82],"kinetics.":[85]},"counts_by_year":[{"year":2026,"cited_by_count":1},{"year":2025,"cited_by_count":1},{"year":2024,"cited_by_count":1},{"year":2023,"cited_by_count":1},{"year":2021,"cited_by_count":3},{"year":2020,"cited_by_count":2},{"year":2019,"cited_by_count":3},{"year":2015,"cited_by_count":3},{"year":2012,"cited_by_count":1}],"updated_date":"2026-11-07T11:25:07.637180","created_date":"2016-06-24T00:00:00"}