{"id":"https://openalex.org/W2169749201","doi":"https://doi.org/10.1016/s0022-0248(02)02367-9","title":"Improvement of crystalline quality of GaAs P1\u2212\u2212N layers with high nitrogen compositions at low-temperature growth by atomic hydrogen irradiation","display_name":"Improvement of crystalline quality of GaAs P1\u2212\u2212N layers with high nitrogen compositions at low-temperature growth by atomic hydrogen irradiation","publication_year":2003,"publication_date":"2003-04-01","ids":{"openalex":"https://openalex.org/W2169749201","doi":"https://doi.org/10.1016/s0022-0248(02)02367-9","mag":"2169749201"},"language":"en","primary_location":{"id":"doi:10.1016/s0022-0248(02)02367-9","doi":"https://doi.org/10.1016/s0022-0248(02)02367-9","is_oa":false,"landing_page_url":"https://doi.org/10.1016/s0022-0248(02)02367-9","pdf_url":null,"source":{"id":"https://openalex.org/S10719676","display_name":"Journal of Crystal Growth","issn_l":"0022-0248","issn":["0022-0248","1873-5002"],"is_oa":false,"is_in_doaj":false,"is_core":true,"listed_in":["anvur-scientific","cwts-core","dongbi-b","jufo-1","ki-jl-1","norway-1","poland-70","russia-white-list-2"],"host_organization":"https://openalex.org/P4310320990","host_organization_name":"Elsevier BV","host_organization_lineage":["https://openalex.org/P4310320990"],"host_organization_lineage_names":["Elsevier BV"],"type":"journal"},"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"Journal of Crystal Growth","raw_type":"journal-article"},"volume":null,"type":"article","is_traditional":true,"indexed_in":["crossref"],"open_access":{"is_oa":false,"oa_status":"closed","oa_url":null,"any_repository_has_fulltext":false},"authorships":[{"author_position":"first","author":{"id":"https://openalex.org/A5013139182","display_name":"Kenji Momose","orcid":null,"observed_orcids":[]},"institutions":[{"id":"https://openalex.org/I136259955","display_name":"Toyohashi University of Technology","ror":"https://ror.org/04ezg6d83","country_code":"JP","type":"education","lineage":["https://openalex.org/I136259955"]}],"countries":["JP"],"is_corresponding":true,"raw_author_name":"Kenji Momose","raw_affiliation_strings":["Department of Electrical and Electronic Engineering, Toyohashi University of Technology, 1-1 Hibarigaoka, Tempaku-cho, Toyohashi, Aichi 441-8580, Japan"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Department of Electrical and Electronic Engineering, Toyohashi University of Technology, 1-1 Hibarigaoka, Tempaku-cho, Toyohashi, Aichi 441-8580, Japan","institution_ids":["https://openalex.org/I136259955"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5113635651","display_name":"H. Yonezu","orcid":null,"observed_orcids":[]},"institutions":[{"id":"https://openalex.org/I136259955","display_name":"Toyohashi University of Technology","ror":"https://ror.org/04ezg6d83","country_code":"JP","type":"education","lineage":["https://openalex.org/I136259955"]}],"countries":["JP"],"is_corresponding":false,"raw_author_name":"Hiroo Yonezu","raw_affiliation_strings":["Department of Electrical and Electronic Engineering, Toyohashi University of Technology, 1-1 Hibarigaoka, Tempaku-cho, Toyohashi, Aichi 441-8580, Japan"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Department of Electrical and Electronic Engineering, Toyohashi University of Technology, 1-1 Hibarigaoka, Tempaku-cho, Toyohashi, Aichi 441-8580, Japan","institution_ids":["https://openalex.org/I136259955"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5102131596","display_name":"Yuzo Furukawa","orcid":null,"observed_orcids":[]},"institutions":[{"id":"https://openalex.org/I136259955","display_name":"Toyohashi University of Technology","ror":"https://ror.org/04ezg6d83","country_code":"JP","type":"education","lineage":["https://openalex.org/I136259955"]}],"countries":["JP"],"is_corresponding":false,"raw_author_name":"Yuzo Furukawa","raw_affiliation_strings":["Department of Electrical and Electronic Engineering, Toyohashi University of Technology, 1-1 Hibarigaoka, Tempaku-cho, Toyohashi, Aichi 441-8580, Japan"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Department of Electrical and Electronic Engineering, Toyohashi University of Technology, 1-1 Hibarigaoka, Tempaku-cho, Toyohashi, Aichi 441-8580, Japan","institution_ids":["https://openalex.org/I136259955"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5102918015","display_name":"Atsushi Utsumi","orcid":"https://orcid.org/0000-0003-4679-5139","observed_orcids":["https://orcid.org/0000-0003-4679-5139"]},"institutions":[{"id":"https://openalex.org/I136259955","display_name":"Toyohashi University of Technology","ror":"https://ror.org/04ezg6d83","country_code":"JP","type":"education","lineage":["https://openalex.org/I136259955"]}],"countries":["JP"],"is_corresponding":false,"raw_author_name":"Atsushi Utsumi","raw_affiliation_strings":["Department of Electrical and Electronic Engineering, Toyohashi University of Technology, 1-1 Hibarigaoka, Tempaku-cho, Toyohashi, Aichi 441-8580, Japan"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Department of Electrical and Electronic Engineering, Toyohashi University of Technology, 1-1 Hibarigaoka, Tempaku-cho, Toyohashi, Aichi 441-8580, Japan","institution_ids":["https://openalex.org/I136259955"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5036908378","display_name":"Yusuke Yoshizumi","orcid":null,"observed_orcids":[]},"institutions":[{"id":"https://openalex.org/I136259955","display_name":"Toyohashi University of Technology","ror":"https://ror.org/04ezg6d83","country_code":"JP","type":"education","lineage":["https://openalex.org/I136259955"]}],"countries":["JP"],"is_corresponding":false,"raw_author_name":"Yusuke Yoshizumi","raw_affiliation_strings":["Department of Electrical and Electronic Engineering, Toyohashi University of Technology, 1-1 Hibarigaoka, Tempaku-cho, Toyohashi, Aichi 441-8580, Japan"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Department of Electrical and Electronic Engineering, Toyohashi University of Technology, 1-1 Hibarigaoka, Tempaku-cho, Toyohashi, Aichi 441-8580, Japan","institution_ids":["https://openalex.org/I136259955"]}]},{"author_position":"last","author":{"id":"https://openalex.org/A5113699085","display_name":"Sei Shinohara","orcid":null,"observed_orcids":[]},"institutions":[{"id":"https://openalex.org/I136259955","display_name":"Toyohashi University of Technology","ror":"https://ror.org/04ezg6d83","country_code":"JP","type":"education","lineage":["https://openalex.org/I136259955"]}],"countries":["JP"],"is_corresponding":false,"raw_author_name":"Sei Shinohara","raw_affiliation_strings":["Department of Electrical and Electronic Engineering, Toyohashi University of Technology, 1-1 Hibarigaoka, Tempaku-cho, Toyohashi, Aichi 441-8580, Japan"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Department of Electrical and Electronic Engineering, Toyohashi University of Technology, 1-1 Hibarigaoka, Tempaku-cho, Toyohashi, Aichi 441-8580, Japan","institution_ids":["https://openalex.org/I136259955"]}]}],"institutions":[],"countries_distinct_count":1,"institutions_distinct_count":1,"corresponding_author_ids":["https://openalex.org/A5013139182"],"corresponding_institution_ids":["https://openalex.org/I136259955"],"apc_list":{"value":3110,"currency":"USD","value_usd":3110},"apc_paid":null,"fwci":0.6364,"has_fulltext":false,"cited_by_count":7,"citation_normalized_percentile":{"value":0.6784523,"is_in_top_1_percent":false,"is_in_top_10_percent":false},"cited_by_percentile_year":{"min":88,"max":93},"biblio":{"volume":"251","issue":"1-4","first_page":"443","last_page":"448"},"is_retracted":false,"is_paratext":false,"is_xpac":false,"primary_topic":{"id":"https://openalex.org/T10099","display_name":"GaN-based semiconductor devices and materials","score":0.6894999742507935,"subfield":{"id":"https://openalex.org/subfields/3104","display_name":"Condensed Matter Physics"},"field":{"id":"https://openalex.org/fields/31","display_name":"Physics and Astronomy"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},"topics":[{"id":"https://openalex.org/T10099","display_name":"GaN-based semiconductor devices and materials","score":0.6894999742507935,"subfield":{"id":"https://openalex.org/subfields/3104","display_name":"Condensed Matter Physics"},"field":{"id":"https://openalex.org/fields/31","display_name":"Physics and Astronomy"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T10022","display_name":"Semiconductor Quantum Structures and Devices","score":0.12460000067949295,"subfield":{"id":"https://openalex.org/subfields/3107","display_name":"Atomic and Molecular Physics, and Optics"},"field":{"id":"https://openalex.org/fields/31","display_name":"Physics and Astronomy"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T12309","display_name":"solar cell performance optimization","score":0.11879999935626984,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}}],"keywords":[{"id":"https://openalex.org/keywords/atomic-hydrogen-irradiation","display_name":"atomic hydrogen irradiation","score":0.8019999861717224},{"id":"https://openalex.org/keywords/low-temperature-growth","display_name":"low-temperature growth","score":0.8989999890327454},{"id":"https://openalex.org/keywords/nitrogen-content","display_name":"nitrogen content","score":0.6240000128746033},{"id":"https://openalex.org/keywords/crystalline-quality","display_name":"crystal quality","score":0.9390000104904175},{"id":"https://openalex.org/keywords/gap-n","display_name":"GaP:N","score":0.7210000157356262},{"id":"https://openalex.org/keywords/gap-substrate","display_name":"GaP substrate","score":0.7919999957084656},{"id":"https://openalex.org/keywords/double-heterostructure","display_name":"double heterostructure","score":0.8980000019073486},{"id":"https://openalex.org/keywords/photoluminescence","display_name":"photoluminescence","score":0.9110000133514404},{"id":"https://openalex.org/keywords/lattice-matching","display_name":"lattice matching","score":0.7789999842643738}],"concepts":[{"id":"https://openalex.org/C512968161","wikidata":"https://www.wikidata.org/wiki/Q556","display_name":"Hydrogen","level":2,"score":0.6674256324768066},{"id":"https://openalex.org/C537208039","wikidata":"https://www.wikidata.org/wiki/Q627","display_name":"Nitrogen","level":2,"score":0.6660427451133728},{"id":"https://openalex.org/C85080765","wikidata":"https://www.wikidata.org/wiki/Q614893","display_name":"Photoluminescence","level":2,"score":0.6566715836524963},{"id":"https://openalex.org/C111337013","wikidata":"https://www.wikidata.org/wiki/Q2737837","display_name":"Irradiation","level":2,"score":0.6335098743438721},{"id":"https://openalex.org/C79794668","wikidata":"https://www.wikidata.org/wiki/Q1616270","display_name":"Heterojunction","level":2,"score":0.59275221824646},{"id":"https://openalex.org/C146088050","wikidata":"https://www.wikidata.org/wiki/Q744818","display_name":"Transmission electron microscopy","level":2,"score":0.5568992495536804},{"id":"https://openalex.org/C181966813","wikidata":"https://www.wikidata.org/wiki/Q806352","display_name":"Band gap","level":2,"score":0.5172718167304993},{"id":"https://openalex.org/C2777289219","wikidata":"https://www.wikidata.org/wiki/Q7632154","display_name":"Substrate (aquarium)","level":2,"score":0.5041965246200562},{"id":"https://openalex.org/C192562407","wikidata":"https://www.wikidata.org/wiki/Q228736","display_name":"Materials science","level":0,"score":0.5036773085594177},{"id":"https://openalex.org/C113196181","wikidata":"https://www.wikidata.org/wiki/Q485223","display_name":"Analytical Chemistry (journal)","level":2,"score":0.4760734438896179},{"id":"https://openalex.org/C8010536","wikidata":"https://www.wikidata.org/wiki/Q160398","display_name":"Crystallography","level":1,"score":0.3750678598880768},{"id":"https://openalex.org/C185592680","wikidata":"https://www.wikidata.org/wiki/Q2329","display_name":"Chemistry","level":0,"score":0.3587592840194702},{"id":"https://openalex.org/C49040817","wikidata":"https://www.wikidata.org/wiki/Q193091","display_name":"Optoelectronics","level":1,"score":0.23294192552566528},{"id":"https://openalex.org/C171250308","wikidata":"https://www.wikidata.org/wiki/Q11468","display_name":"Nanotechnology","level":1,"score":0.18164268136024475},{"id":"https://openalex.org/C178790620","wikidata":"https://www.wikidata.org/wiki/Q11351","display_name":"Organic chemistry","level":1,"score":0.0},{"id":"https://openalex.org/C111368507","wikidata":"https://www.wikidata.org/wiki/Q43518","display_name":"Oceanography","level":1,"score":0.0},{"id":"https://openalex.org/C121332964","wikidata":"https://www.wikidata.org/wiki/Q413","display_name":"Physics","level":0,"score":0.0},{"id":"https://openalex.org/C185544564","wikidata":"https://www.wikidata.org/wiki/Q81197","display_name":"Nuclear physics","level":1,"score":0.0},{"id":"https://openalex.org/C43617362","wikidata":"https://www.wikidata.org/wiki/Q170050","display_name":"Chromatography","level":1,"score":0.0},{"id":"https://openalex.org/C127313418","wikidata":"https://www.wikidata.org/wiki/Q1069","display_name":"Geology","level":0,"score":0.0}],"mesh":[],"locations_count":1,"locations":[{"id":"doi:10.1016/s0022-0248(02)02367-9","doi":"https://doi.org/10.1016/s0022-0248(02)02367-9","is_oa":false,"landing_page_url":"https://doi.org/10.1016/s0022-0248(02)02367-9","pdf_url":null,"source":{"id":"https://openalex.org/S10719676","display_name":"Journal of Crystal Growth","issn_l":"0022-0248","issn":["0022-0248","1873-5002"],"is_oa":false,"is_in_doaj":false,"is_core":true,"listed_in":["anvur-scientific","cwts-core","dongbi-b","jufo-1","ki-jl-1","norway-1","poland-70","russia-white-list-2"],"host_organization":"https://openalex.org/P4310320990","host_organization_name":"Elsevier BV","host_organization_lineage":["https://openalex.org/P4310320990"],"host_organization_lineage_names":["Elsevier BV"],"type":"journal"},"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"Journal of Crystal Growth","raw_type":"journal-article"}],"best_oa_location":null,"sustainable_development_goals":[],"study_designs":[],"awards":[],"funders":[{"id":"https://openalex.org/F4320320912","display_name":"Ministry of Education, Culture, Sports, Science and Technology","ror":"https://ror.org/048rj2z13"}],"has_content":{"pdf":false,"grobid_xml":false},"content_urls":null,"referenced_works_count":19,"referenced_works":["https://openalex.org/W1649464533","https://openalex.org/W1662536415","https://openalex.org/W1679482701","https://openalex.org/W1965233023","https://openalex.org/W1983260922","https://openalex.org/W1995707612","https://openalex.org/W1999314788","https://openalex.org/W2000021432","https://openalex.org/W2000445137","https://openalex.org/W2008689999","https://openalex.org/W2008778838","https://openalex.org/W2027076352","https://openalex.org/W2036937429","https://openalex.org/W2051064121","https://openalex.org/W2051468079","https://openalex.org/W2070224684","https://openalex.org/W2084220208","https://openalex.org/W2140292759","https://openalex.org/W2493430260"],"related_works":["https://openalex.org/W1533513569","https://openalex.org/W2783304667","https://openalex.org/W2567675283","https://openalex.org/W2187352419","https://openalex.org/W2015743983","https://openalex.org/W2054356904","https://openalex.org/W2092738522","https://openalex.org/W2014401464","https://openalex.org/W2035291280","https://openalex.org/W2090610894"],"abstract_inverted_index":null,"counts_by_year":[{"year":2022,"cited_by_count":1},{"year":2015,"cited_by_count":1}],"updated_date":"2026-08-21T09:56:20.448147","created_date":"2016-06-24T00:00:00"}