{"id":"https://openalex.org/W2166971949","doi":"https://doi.org/10.1557/proc-147-33","title":"Removal of End-of-Range Ion Implantation Defects in Silicon by Near Noble and Refractory Silicide Formation","display_name":"Removal of End-of-Range Ion Implantation Defects in Silicon by Near Noble and Refractory Silicide Formation","publication_year":1989,"publication_date":"1989-01-01","ids":{"openalex":"https://openalex.org/W2166971949","doi":"https://doi.org/10.1557/proc-147-33","mag":"2166971949"},"language":"en","primary_location":{"id":"doi:10.1557/proc-147-33","doi":"https://doi.org/10.1557/proc-147-33","is_oa":false,"landing_page_url":"https://doi.org/10.1557/proc-147-33","pdf_url":null,"source":{"id":"https://openalex.org/S2530005873","display_name":"MRS Proceedings","issn_l":"0272-9172","issn":["0272-9172","1946-4274"],"is_oa":false,"is_in_doaj":false,"is_core":true,"listed_in":["cwts-core","jufo-1","norway-1"],"host_organization":"https://openalex.org/P4310311721","host_organization_name":"Cambridge University Press","host_organization_lineage":["https://openalex.org/P4310311721","https://openalex.org/P4310311702"],"host_organization_lineage_names":["Cambridge University Press","University of Cambridge"],"type":"journal"},"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"MRS Proceedings","raw_type":"journal-article"},"volume":null,"type":"article","is_traditional":true,"indexed_in":["crossref"],"open_access":{"is_oa":false,"oa_status":"closed","oa_url":null,"any_repository_has_fulltext":false},"authorships":[{"author_position":"first","author":{"id":"https://openalex.org/A5083533568","display_name":"Water Lur","orcid":null,"observed_orcids":[]},"institutions":[{"id":"https://openalex.org/I25846049","display_name":"National Tsing Hua University","ror":"https://ror.org/00zdnkx70","country_code":"TW","type":"education","lineage":["https://openalex.org/I25846049"]}],"countries":["TW"],"is_corresponding":false,"raw_author_name":"W. Lur","raw_affiliation_strings":["Department of Materials Science and Engineering, National Tsing Hua University, Hsinchu, Taiwan, Republic of China"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Department of Materials Science and Engineering, National Tsing Hua University, Hsinchu, Taiwan, Republic of China","institution_ids":["https://openalex.org/I25846049"]}]},{"author_position":"middle","author":{"id":null,"display_name":"J. Y. Cheng","orcid":null,"observed_orcids":[]},"institutions":[{"id":"https://openalex.org/I25846049","display_name":"National Tsing Hua University","ror":"https://ror.org/00zdnkx70","country_code":"TW","type":"education","lineage":["https://openalex.org/I25846049"]}],"countries":["TW"],"is_corresponding":false,"raw_author_name":"J. Y. Cheng","raw_affiliation_strings":["Department of Materials Science and Engineering, National Tsing Hua University, Hsinchu, Taiwan, Republic of China"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Department of Materials Science and Engineering, National Tsing Hua University, Hsinchu, Taiwan, Republic of China","institution_ids":["https://openalex.org/I25846049"]}]},{"author_position":"last","author":{"id":"https://openalex.org/A5111024281","display_name":"L.J. Chen","orcid":"https://orcid.org/0009-0009-7208-1341","observed_orcids":["https://orcid.org/0009-0009-7208-1341"]},"institutions":[{"id":"https://openalex.org/I25846049","display_name":"National Tsing Hua University","ror":"https://ror.org/00zdnkx70","country_code":"TW","type":"education","lineage":["https://openalex.org/I25846049"]}],"countries":["TW"],"is_corresponding":false,"raw_author_name":"L. J. Chen","raw_affiliation_strings":["Department of Materials Science and Engineering, National Tsing Hua University, Hsinchu, Taiwan, Republic of China"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Department of Materials Science and Engineering, National Tsing Hua University, Hsinchu, Taiwan, Republic of China","institution_ids":["https://openalex.org/I25846049"]}]}],"institutions":[],"countries_distinct_count":1,"institutions_distinct_count":1,"corresponding_author_ids":[],"corresponding_institution_ids":["https://openalex.org/I25846049"],"apc_list":null,"apc_paid":null,"fwci":0.5681,"has_fulltext":false,"cited_by_count":3,"citation_normalized_percentile":{"value":0.63412312,"is_in_top_1_percent":false,"is_in_top_10_percent":false},"cited_by_percentile_year":null,"biblio":{"volume":"147","issue":null,"first_page":null,"last_page":null},"is_retracted":false,"is_paratext":false,"is_xpac":false,"primary_topic":{"id":"https://openalex.org/T11853","display_name":"Semiconductor materials and interfaces","score":0.9937000274658203,"subfield":{"id":"https://openalex.org/subfields/2504","display_name":"Electronic, Optical and Magnetic Materials"},"field":{"id":"https://openalex.org/fields/25","display_name":"Materials Science"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},"topics":[{"id":"https://openalex.org/T11853","display_name":"Semiconductor materials and interfaces","score":0.9937000274658203,"subfield":{"id":"https://openalex.org/subfields/2504","display_name":"Electronic, Optical and Magnetic Materials"},"field":{"id":"https://openalex.org/fields/25","display_name":"Materials Science"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T10472","display_name":"Semiconductor materials and devices","score":0.00279999990016222,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T10624","display_name":"Silicon and Solar Cell Technologies","score":0.0008999999845400453,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}}],"keywords":[{"id":"https://openalex.org/keywords/end-of-range-defects","display_name":"end-of-range defects","score":0.9779999852180481},{"id":"https://openalex.org/keywords/ion-implantation-damage","display_name":"ion implantation damage","score":0.7839999794960022},{"id":"https://openalex.org/keywords/defect-removal","display_name":"defect repair","score":0.6309999823570251},{"id":"https://openalex.org/keywords/silicide-formation","display_name":"silicide formation","score":0.7879999876022339},{"id":"https://openalex.org/keywords/cobalt-silicide","display_name":"cobalt silicide","score":0.8659999966621399},{"id":"https://openalex.org/keywords/nickel-silicide","display_name":"nickel silicide","score":0.9980000257492065},{"id":"https://openalex.org/keywords/molybdenum-silicide","display_name":"molybdenum silicide","score":0.9940000176429749},{"id":"https://openalex.org/keywords/tungsten-silicide","display_name":"tungsten silicide","score":0.9990000128746033},{"id":"https://openalex.org/keywords/vacancy-generation","display_name":"vacancy generation","score":0.7070000171661377},{"id":"https://openalex.org/keywords/silicon","display_name":"silicon","score":0.34599998593330383}],"concepts":[{"id":"https://openalex.org/C192562407","wikidata":"https://www.wikidata.org/wiki/Q228736","display_name":"Materials science","level":0,"score":0.8834547400474548},{"id":"https://openalex.org/C2780901251","wikidata":"https://www.wikidata.org/wiki/Q426473","display_name":"Silicide","level":3,"score":0.7684787511825562},{"id":"https://openalex.org/C114221277","wikidata":"https://www.wikidata.org/wiki/Q899743","display_name":"Vacancy defect","level":2,"score":0.6299382448196411},{"id":"https://openalex.org/C544956773","wikidata":"https://www.wikidata.org/wiki/Q670","display_name":"Silicon","level":2,"score":0.5898386240005493},{"id":"https://openalex.org/C95627916","wikidata":"https://www.wikidata.org/wiki/Q428932","display_name":"Refractory metals","level":2,"score":0.5692293047904968},{"id":"https://openalex.org/C142424586","wikidata":"https://www.wikidata.org/wiki/Q7307572","display_name":"Refractory (planetary science)","level":2,"score":0.5585898756980896},{"id":"https://openalex.org/C41823505","wikidata":"https://www.wikidata.org/wiki/Q1436752","display_name":"Ion implantation","level":3,"score":0.461870938539505},{"id":"https://openalex.org/C69357855","wikidata":"https://www.wikidata.org/wiki/Q163214","display_name":"Diffusion","level":2,"score":0.439786821603775},{"id":"https://openalex.org/C191897082","wikidata":"https://www.wikidata.org/wiki/Q11467","display_name":"Metallurgy","level":1,"score":0.4355141818523407},{"id":"https://openalex.org/C145148216","wikidata":"https://www.wikidata.org/wiki/Q36496","display_name":"Ion","level":2,"score":0.3617887496948242},{"id":"https://openalex.org/C8010536","wikidata":"https://www.wikidata.org/wiki/Q160398","display_name":"Crystallography","level":1,"score":0.12524181604385376},{"id":"https://openalex.org/C185592680","wikidata":"https://www.wikidata.org/wiki/Q2329","display_name":"Chemistry","level":0,"score":0.04710245132446289},{"id":"https://openalex.org/C97355855","wikidata":"https://www.wikidata.org/wiki/Q11473","display_name":"Thermodynamics","level":1,"score":0.04192093014717102},{"id":"https://openalex.org/C178790620","wikidata":"https://www.wikidata.org/wiki/Q11351","display_name":"Organic chemistry","level":1,"score":0.0},{"id":"https://openalex.org/C121332964","wikidata":"https://www.wikidata.org/wiki/Q413","display_name":"Physics","level":0,"score":0.0}],"mesh":[],"locations_count":1,"locations":[{"id":"doi:10.1557/proc-147-33","doi":"https://doi.org/10.1557/proc-147-33","is_oa":false,"landing_page_url":"https://doi.org/10.1557/proc-147-33","pdf_url":null,"source":{"id":"https://openalex.org/S2530005873","display_name":"MRS Proceedings","issn_l":"0272-9172","issn":["0272-9172","1946-4274"],"is_oa":false,"is_in_doaj":false,"is_core":true,"listed_in":["cwts-core","jufo-1","norway-1"],"host_organization":"https://openalex.org/P4310311721","host_organization_name":"Cambridge University Press","host_organization_lineage":["https://openalex.org/P4310311721","https://openalex.org/P4310311702"],"host_organization_lineage_names":["Cambridge University Press","University of Cambridge"],"type":"journal"},"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"MRS Proceedings","raw_type":"journal-article"}],"best_oa_location":null,"sustainable_development_goals":[],"study_designs":[],"awards":[],"funders":[{"id":"https://openalex.org/F4320321040","display_name":"National Science Council","ror":"https://ror.org/02kv4zf79"}],"has_content":{"pdf":false,"grobid_xml":false},"content_urls":null,"referenced_works_count":13,"referenced_works":["https://openalex.org/W137064949","https://openalex.org/W645114117","https://openalex.org/W1530433448","https://openalex.org/W1966211079","https://openalex.org/W1990606449","https://openalex.org/W2007051384","https://openalex.org/W2017508456","https://openalex.org/W2032551921","https://openalex.org/W2053075505","https://openalex.org/W2071506984","https://openalex.org/W2077714835","https://openalex.org/W2089420856","https://openalex.org/W2494885143"],"related_works":["https://openalex.org/W2071506984","https://openalex.org/W1991412982","https://openalex.org/W1993935544","https://openalex.org/W2017508456","https://openalex.org/W2331279270","https://openalex.org/W2039575624","https://openalex.org/W2326609991","https://openalex.org/W2017396369","https://openalex.org/W2053790467","https://openalex.org/W2015531213"],"abstract_inverted_index":null,"counts_by_year":[],"updated_date":"2026-10-14T16:39:01.820549","created_date":"2016-06-24T00:00:00"}