{"id":"https://openalex.org/W2163398144","doi":"https://doi.org/10.1088/0268-1242/6/7/022","title":"A study of the oxide grown on WSi2","display_name":"A study of the oxide grown on WSi2","publication_year":1991,"publication_date":"1991-07-01","ids":{"openalex":"https://openalex.org/W2163398144","doi":"https://doi.org/10.1088/0268-1242/6/7/022","mag":"2163398144"},"language":"en","primary_location":{"id":"doi:10.1088/0268-1242/6/7/022","doi":"https://doi.org/10.1088/0268-1242/6/7/022","is_oa":true,"landing_page_url":"https://doi.org/10.1088/0268-1242/6/7/022","pdf_url":"https://iopscience.iop.org/article/10.1088/0268-1242/6/7/022/pdf","source":{"id":"https://openalex.org/S106302738","display_name":"Semiconductor Science and Technology","issn_l":"0268-1242","issn":["0268-1242","1361-6641"],"is_oa":false,"is_in_doaj":false,"is_core":true,"listed_in":["cwts-core","dongbi-c","jufo-1","norway-1","poland-70","russia-white-list-2"],"host_organization":"https://openalex.org/P4310320083","host_organization_name":"IOP Publishing","host_organization_lineage":["https://openalex.org/P4310320083","https://openalex.org/P4310311669"],"host_organization_lineage_names":["IOP Publishing","Institute of Physics"],"type":"journal"},"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"Semiconductor Science and Technology","raw_type":"journal-article"},"volume":null,"type":"article","is_traditional":true,"indexed_in":["crossref"],"open_access":{"is_oa":true,"oa_status":"bronze","oa_url":"https://iopscience.iop.org/article/10.1088/0268-1242/6/7/022/pdf","any_repository_has_fulltext":false},"authorships":[{"author_position":"first","author":{"id":"https://openalex.org/A5089878369","display_name":"P. Ghezzi","orcid":null,"observed_orcids":[]},"institutions":[],"countries":[],"is_corresponding":false,"raw_author_name":"P Ghezzi","raw_affiliation_strings":["SGS-Thomson, Central R&D, Agrate Brianza (MI), Italy"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"SGS-Thomson, Central R&D, Agrate Brianza (MI), Italy","institution_ids":[]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5037131907","display_name":"F. Pio","orcid":null,"observed_orcids":[]},"institutions":[],"countries":[],"is_corresponding":false,"raw_author_name":"F Pio","raw_affiliation_strings":["SGS-Thomson, Central R&D, Agrate Brianza (MI), Italy"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"SGS-Thomson, Central R&D, Agrate Brianza (MI), Italy","institution_ids":[]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5110434586","display_name":"G. Queirolo","orcid":null,"observed_orcids":[]},"institutions":[],"countries":[],"is_corresponding":false,"raw_author_name":"G Queirolo","raw_affiliation_strings":["SGS-Thomson, Central R&D, Agrate Brianza (MI), Italy"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"SGS-Thomson, Central R&D, Agrate Brianza (MI), Italy","institution_ids":[]}]},{"author_position":"last","author":{"id":"https://openalex.org/A5027057930","display_name":"Carlo Giuseppe Riva","orcid":"https://orcid.org/0000-0001-5026-0888","observed_orcids":["https://orcid.org/0000-0001-5026-0888"]},"institutions":[],"countries":[],"is_corresponding":false,"raw_author_name":"C Riva","raw_affiliation_strings":["SGS-Thomson, Central R&D, Agrate Brianza (MI), Italy"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"SGS-Thomson, Central R&D, Agrate Brianza (MI), Italy","institution_ids":[]}]}],"institutions":[],"countries_distinct_count":0,"institutions_distinct_count":0,"corresponding_author_ids":[],"corresponding_institution_ids":[],"apc_list":{"value":3325,"currency":"USD","value_usd":3325},"apc_paid":null,"fwci":0.0,"has_fulltext":true,"cited_by_count":4,"citation_normalized_percentile":{"value":0.29858215,"is_in_top_1_percent":false,"is_in_top_10_percent":false},"cited_by_percentile_year":null,"biblio":{"volume":"6","issue":"7","first_page":"684","last_page":"689"},"is_retracted":false,"is_paratext":false,"is_xpac":false,"primary_topic":{"id":"https://openalex.org/T10472","display_name":"Semiconductor materials and devices","score":0.9980000257492065,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},"topics":[{"id":"https://openalex.org/T10472","display_name":"Semiconductor materials and devices","score":0.9980000257492065,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T11853","display_name":"Semiconductor materials and interfaces","score":0.0010999999940395355,"subfield":{"id":"https://openalex.org/subfields/2504","display_name":"Electronic, Optical and Magnetic Materials"},"field":{"id":"https://openalex.org/fields/25","display_name":"Materials Science"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T12808","display_name":"Ferroelectric and Negative Capacitance Devices","score":9.999999747378752e-05,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}}],"keywords":[{"id":"https://openalex.org/keywords/tungsten-silicide","display_name":"tungsten silicide","score":0.9430000185966492},{"id":"https://openalex.org/keywords/wsi2","display_name":"WSi2","score":0.734000027179718},{"id":"https://openalex.org/keywords/silica","display_name":"silica","score":0.6140000224113464},{"id":"https://openalex.org/keywords/thermal-oxidation","display_name":"thermal oxidation","score":0.7630000114440918},{"id":"https://openalex.org/keywords/floating-gate","display_name":"floating gate","score":0.5730000138282776},{"id":"https://openalex.org/keywords/charge-storage","display_name":"charge storage","score":0.6010000109672546},{"id":"https://openalex.org/keywords/oxide-reliability","display_name":"oxide reliability","score":0.7919999957084656},{"id":"https://openalex.org/keywords/memory-retention","display_name":"memory retention","score":0.6449999809265137},{"id":"https://openalex.org/keywords/endurance","display_name":"endurance","score":0.8610000014305115},{"id":"https://openalex.org/keywords/capacitance-voltage-characteristics","display_name":"capacitance-voltage characteristics","score":0.6159999966621399},{"id":"https://openalex.org/keywords/current-voltage-characteristics","display_name":"current-voltage characteristics","score":0.7490000128746033}],"concepts":[{"id":"https://openalex.org/C27699510","wikidata":"https://www.wikidata.org/wiki/Q205908","display_name":"EEPROM","level":2,"score":0.789648711681366},{"id":"https://openalex.org/C192562407","wikidata":"https://www.wikidata.org/wiki/Q228736","display_name":"Materials science","level":0,"score":0.7218379974365234},{"id":"https://openalex.org/C25442681","wikidata":"https://www.wikidata.org/wiki/Q28087","display_name":"Auger electron spectroscopy","level":2,"score":0.5660749673843384},{"id":"https://openalex.org/C49040817","wikidata":"https://www.wikidata.org/wiki/Q193091","display_name":"Optoelectronics","level":1,"score":0.5432000160217285},{"id":"https://openalex.org/C136525101","wikidata":"https://www.wikidata.org/wiki/Q5428139","display_name":"Fabrication","level":3,"score":0.5101242661476135},{"id":"https://openalex.org/C52192207","wikidata":"https://www.wikidata.org/wiki/Q5322","display_name":"Capacitor","level":3,"score":0.5086029767990112},{"id":"https://openalex.org/C160671074","wikidata":"https://www.wikidata.org/wiki/Q267131","display_name":"Wafer","level":2,"score":0.5047003030776978},{"id":"https://openalex.org/C163980746","wikidata":"https://www.wikidata.org/wiki/Q378210","display_name":"EPROM","level":2,"score":0.5005390644073486},{"id":"https://openalex.org/C2779851234","wikidata":"https://www.wikidata.org/wiki/Q50690","display_name":"Oxide","level":2,"score":0.500150203704834},{"id":"https://openalex.org/C544956773","wikidata":"https://www.wikidata.org/wiki/Q670","display_name":"Silicon","level":2,"score":0.467478483915329},{"id":"https://openalex.org/C2779089622","wikidata":"https://www.wikidata.org/wiki/Q116269","display_name":"Silicon dioxide","level":2,"score":0.4581024944782257},{"id":"https://openalex.org/C2780901251","wikidata":"https://www.wikidata.org/wiki/Q426473","display_name":"Silicide","level":3,"score":0.43192556500434875},{"id":"https://openalex.org/C119599485","wikidata":"https://www.wikidata.org/wiki/Q43035","display_name":"Electrical engineering","level":1,"score":0.28221744298934937},{"id":"https://openalex.org/C165801399","wikidata":"https://www.wikidata.org/wiki/Q25428","display_name":"Voltage","level":2,"score":0.19274389743804932},{"id":"https://openalex.org/C159985019","wikidata":"https://www.wikidata.org/wiki/Q181790","display_name":"Composite material","level":1,"score":0.1839810311794281},{"id":"https://openalex.org/C191897082","wikidata":"https://www.wikidata.org/wiki/Q11467","display_name":"Metallurgy","level":1,"score":0.13228446245193481},{"id":"https://openalex.org/C204787440","wikidata":"https://www.wikidata.org/wiki/Q188504","display_name":"Alternative medicine","level":2,"score":0.0},{"id":"https://openalex.org/C121332964","wikidata":"https://www.wikidata.org/wiki/Q413","display_name":"Physics","level":0,"score":0.0},{"id":"https://openalex.org/C71924100","wikidata":"https://www.wikidata.org/wiki/Q11190","display_name":"Medicine","level":0,"score":0.0},{"id":"https://openalex.org/C185544564","wikidata":"https://www.wikidata.org/wiki/Q81197","display_name":"Nuclear physics","level":1,"score":0.0},{"id":"https://openalex.org/C142724271","wikidata":"https://www.wikidata.org/wiki/Q7208","display_name":"Pathology","level":1,"score":0.0},{"id":"https://openalex.org/C127413603","wikidata":"https://www.wikidata.org/wiki/Q11023","display_name":"Engineering","level":0,"score":0.0}],"mesh":[],"locations_count":1,"locations":[{"id":"doi:10.1088/0268-1242/6/7/022","doi":"https://doi.org/10.1088/0268-1242/6/7/022","is_oa":true,"landing_page_url":"https://doi.org/10.1088/0268-1242/6/7/022","pdf_url":"https://iopscience.iop.org/article/10.1088/0268-1242/6/7/022/pdf","source":{"id":"https://openalex.org/S106302738","display_name":"Semiconductor Science and Technology","issn_l":"0268-1242","issn":["0268-1242","1361-6641"],"is_oa":false,"is_in_doaj":false,"is_core":true,"listed_in":["cwts-core","dongbi-c","jufo-1","norway-1","poland-70","russia-white-list-2"],"host_organization":"https://openalex.org/P4310320083","host_organization_name":"IOP Publishing","host_organization_lineage":["https://openalex.org/P4310320083","https://openalex.org/P4310311669"],"host_organization_lineage_names":["IOP Publishing","Institute of Physics"],"type":"journal"},"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"Semiconductor Science and Technology","raw_type":"journal-article"}],"best_oa_location":{"id":"doi:10.1088/0268-1242/6/7/022","doi":"https://doi.org/10.1088/0268-1242/6/7/022","is_oa":true,"landing_page_url":"https://doi.org/10.1088/0268-1242/6/7/022","pdf_url":"https://iopscience.iop.org/article/10.1088/0268-1242/6/7/022/pdf","source":{"id":"https://openalex.org/S106302738","display_name":"Semiconductor Science and Technology","issn_l":"0268-1242","issn":["0268-1242","1361-6641"],"is_oa":false,"is_in_doaj":false,"is_core":true,"listed_in":["cwts-core","dongbi-c","jufo-1","norway-1","poland-70","russia-white-list-2"],"host_organization":"https://openalex.org/P4310320083","host_organization_name":"IOP Publishing","host_organization_lineage":["https://openalex.org/P4310320083","https://openalex.org/P4310311669"],"host_organization_lineage_names":["IOP Publishing","Institute of Physics"],"type":"journal"},"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"Semiconductor Science and Technology","raw_type":"journal-article"},"sustainable_development_goals":[],"study_designs":[],"awards":[],"funders":[],"has_content":{"pdf":true,"grobid_xml":true},"content_urls":{"pdf":"https://content.openalex.org/works/W2163398144.pdf","grobid_xml":"https://content.openalex.org/works/W2163398144.grobid-xml"},"referenced_works_count":6,"referenced_works":["https://openalex.org/W1965134909","https://openalex.org/W2003588134","https://openalex.org/W2053753250","https://openalex.org/W2087264597","https://openalex.org/W2170169509","https://openalex.org/W3122312042"],"related_works":["https://openalex.org/W1973216948","https://openalex.org/W2156140391","https://openalex.org/W2036722320","https://openalex.org/W2158928869","https://openalex.org/W2015377566","https://openalex.org/W2002582545","https://openalex.org/W1862345683","https://openalex.org/W1996781595","https://openalex.org/W1973623315","https://openalex.org/W2019703338"],"abstract_inverted_index":{"Modern":[0],"single-poly":[1,128,147],"electrically":[2],"erasable":[3],"programmable":[4],"read-only":[5],"memories":[6],"(EEPROM)":[7],"use":[8],"a":[9,16,63],"stacked":[10],"silicide/polysilicon":[11],"(polycide)":[12],"floating":[13],"gate":[14],"as":[15],"charge":[17,28],"storage":[18],"element.":[19],"In":[20],"these":[21],"devices":[22],"the":[23,31,34,41,50,113,116,135,144],"ability":[24],"to":[25,46],"retain":[26],"stored":[27],"relies":[29],"on":[30,40,67,96,127,139],"quality":[32],"of":[33,74,86,153],"top":[35],"silicon":[36,57],"dioxide,":[37],"thermally":[38,60,137],"grown":[39,61,138],"silicide,":[42],"which":[43],"is":[44],"known":[45],"be":[47],"affected":[48],"by":[49,84],"oxidation":[51],"procedure.":[52],"The":[53,131,151],"authors":[54],"have":[55,124],"studied":[56],"dioxide":[58],"films,":[59],"in":[62,72],"dry":[64],"oxygen":[65],"atmosphere":[66],"WSi":[68],"2":[69,98,100],",":[70],"both":[71,159],"terms":[73],"composition":[75],"and":[76,107,118,162],"electrical":[77,92],"properties.":[78],"Concentration":[79],"depth":[80],"profiles":[81],"were":[82,94],"obtained":[83,95],"means":[85],"Auger":[87],"electron":[88],"spectroscopy":[89],"(AES),":[90],"while":[91],"characteristics":[93],"poly-Si/SiO":[97],"/WSi":[99],"capacitors,":[101],"from":[102],"C-V":[103],"plots,":[104],"I-V":[105],"measurements":[106],"ramped":[108],"voltage":[109],"stress.":[110],"To":[111],"characterize":[112],"oxide":[114,136],"reliability,":[115],"endurance":[117,161],"memory":[119,154],"retention":[120,163],"at":[121],"high":[122],"temperature":[123],"been":[125,157],"measured":[126],"EEPROM":[129],"cells.":[130],"results":[132],"show":[133],"that":[134],"tungsten":[140],"silicide":[141],"can":[142],"meet":[143],"requirements":[145],"for":[146],"PROM":[148],"device":[149],"fabrication.":[150],"functionality":[152],"cells":[155],"has":[156],"demonstrated,":[158],"with":[160],"measurements.":[164]},"counts_by_year":[],"updated_date":"2026-10-02T10:15:12.560889","created_date":"2016-06-24T00:00:00"}