{"id":"https://openalex.org/W2161644404","doi":"https://doi.org/10.1109/16.78390","title":"A new concept silicon homojunction infrared sensor","display_name":"A new concept silicon homojunction infrared sensor","publication_year":1991,"publication_date":"1991-05-01","ids":{"openalex":"https://openalex.org/W2161644404","doi":"https://doi.org/10.1109/16.78390","mag":"2161644404"},"language":"en","primary_location":{"id":"doi:10.1109/16.78390","doi":"https://doi.org/10.1109/16.78390","is_oa":false,"landing_page_url":"https://doi.org/10.1109/16.78390","pdf_url":null,"source":{"id":"https://openalex.org/S162355128","display_name":"IEEE Transactions on Electron Devices","issn_l":"0018-9383","issn":["0018-9383","1557-9646"],"is_oa":false,"is_in_doaj":false,"is_core":true,"listed_in":["cwts-core","dongbi-b","jufo-3","norway-2","poland-100","russia-white-list-1"],"host_organization":"https://openalex.org/P4310319808","host_organization_name":"Institute of Electrical and Electronics Engineers","host_organization_lineage":["https://openalex.org/P4310319808"],"host_organization_lineage_names":["Institute of Electrical and Electronics Engineers"],"type":"journal"},"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"IEEE Transactions on Electron Devices","raw_type":"journal-article"},"volume":null,"type":"article","indexed_in":["crossref"],"open_access":{"is_oa":false,"oa_status":"closed","oa_url":null,"any_repository_has_fulltext":false},"authorships":[{"author_position":"first","author":{"id":"https://openalex.org/A5021074159","display_name":"Shigeru Tohyama","orcid":null,"observed_orcids":[]},"institutions":[{"id":"https://openalex.org/I118347220","display_name":"NEC (Japan)","ror":"https://ror.org/04jndar25","country_code":"JP","type":"company","lineage":["https://openalex.org/I118347220"]}],"countries":["JP"],"is_corresponding":false,"raw_author_name":"S. Tohyama","raw_affiliation_strings":["NEC Corporation Limited, Sagamihara, Kanagawa, Japan","NEC Corporation, Kanagawa, JAPAN"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"NEC Corporation Limited, Sagamihara, Kanagawa, Japan","institution_ids":["https://openalex.org/I118347220"]},{"raw_affiliation_string":"NEC Corporation, Kanagawa, JAPAN","institution_ids":["https://openalex.org/I118347220"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5049537828","display_name":"Nobukazu Teranishi","orcid":null,"observed_orcids":[]},"institutions":[{"id":"https://openalex.org/I118347220","display_name":"NEC (Japan)","ror":"https://ror.org/04jndar25","country_code":"JP","type":"company","lineage":["https://openalex.org/I118347220"]}],"countries":["JP"],"is_corresponding":false,"raw_author_name":"N. Teranishi","raw_affiliation_strings":["NEC Corp., Kanagawa, Japan","NEC Corporation, Kanagawa, JAPAN"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"NEC Corp., Kanagawa, Japan","institution_ids":["https://openalex.org/I118347220"]},{"raw_affiliation_string":"NEC Corporation, Kanagawa, JAPAN","institution_ids":["https://openalex.org/I118347220"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5080487540","display_name":"K. Konuma","orcid":null,"observed_orcids":[]},"institutions":[{"id":"https://openalex.org/I118347220","display_name":"NEC (Japan)","ror":"https://ror.org/04jndar25","country_code":"JP","type":"company","lineage":["https://openalex.org/I118347220"]}],"countries":["JP"],"is_corresponding":false,"raw_author_name":"K. Konuma","raw_affiliation_strings":["NEC Corporation Limited, Sagamihara, Kanagawa, Japan","NEC Corporation, Kanagawa, JAPAN"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"NEC Corporation Limited, Sagamihara, Kanagawa, Japan","institution_ids":["https://openalex.org/I118347220"]},{"raw_affiliation_string":"NEC Corporation, Kanagawa, JAPAN","institution_ids":["https://openalex.org/I118347220"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5003755089","display_name":"Masatoshi Nishimura","orcid":null,"observed_orcids":[]},"institutions":[{"id":"https://openalex.org/I118347220","display_name":"NEC (Japan)","ror":"https://ror.org/04jndar25","country_code":"JP","type":"company","lineage":["https://openalex.org/I118347220"]}],"countries":["JP"],"is_corresponding":false,"raw_author_name":"M. Nishimura","raw_affiliation_strings":["NEC Corporation Limited, Sagamihara, Kanagawa, Japan","NEC Corporation, Kanagawa, JAPAN"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"NEC Corporation Limited, Sagamihara, Kanagawa, Japan","institution_ids":["https://openalex.org/I118347220"]},{"raw_affiliation_string":"NEC Corporation, Kanagawa, JAPAN","institution_ids":["https://openalex.org/I118347220"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5047236261","display_name":"K.I. Arai","orcid":"https://orcid.org/0000-0003-3226-3035","observed_orcids":["https://orcid.org/0000-0003-3226-3035"]},"institutions":[{"id":"https://openalex.org/I118347220","display_name":"NEC (Japan)","ror":"https://ror.org/04jndar25","country_code":"JP","type":"company","lineage":["https://openalex.org/I118347220"]}],"countries":["JP"],"is_corresponding":false,"raw_author_name":"K. Arai","raw_affiliation_strings":["NEC Corporation Limited, Sagamihara, Kanagawa, Japan","NEC Corporation, Kanagawa, JAPAN"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"NEC Corporation Limited, Sagamihara, Kanagawa, Japan","institution_ids":["https://openalex.org/I118347220"]},{"raw_affiliation_string":"NEC Corporation, Kanagawa, JAPAN","institution_ids":["https://openalex.org/I118347220"]}]},{"author_position":"last","author":{"id":"https://openalex.org/A5110469423","display_name":"Eiji Oda","orcid":null,"observed_orcids":[]},"institutions":[{"id":"https://openalex.org/I118347220","display_name":"NEC (Japan)","ror":"https://ror.org/04jndar25","country_code":"JP","type":"company","lineage":["https://openalex.org/I118347220"]}],"countries":["JP"],"is_corresponding":false,"raw_author_name":"E. Oda","raw_affiliation_strings":["NEC Corporation Limited, Sagamihara, Kanagawa, Japan","NEC Corporation, Kanagawa, JAPAN"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"NEC Corporation Limited, Sagamihara, Kanagawa, Japan","institution_ids":["https://openalex.org/I118347220"]},{"raw_affiliation_string":"NEC Corporation, Kanagawa, JAPAN","institution_ids":["https://openalex.org/I118347220"]}]}],"institutions":[],"countries_distinct_count":1,"institutions_distinct_count":1,"corresponding_author_ids":[],"corresponding_institution_ids":["https://openalex.org/I118347220"],"apc_list":{"value":2645,"currency":"USD","value_usd":2645},"apc_paid":null,"fwci":0.9278,"has_fulltext":false,"cited_by_count":17,"citation_normalized_percentile":{"value":0.7699031,"is_in_top_1_percent":false,"is_in_top_10_percent":false},"cited_by_percentile_year":{"min":89,"max":94},"biblio":{"volume":"38","issue":"5","first_page":"1136","last_page":"1140"},"is_retracted":false,"is_paratext":false,"is_xpac":false,"primary_topic":{"id":"https://openalex.org/T11637","display_name":"Advanced Semiconductor Detectors and Materials","score":0.9564999938011169,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},"topics":[{"id":"https://openalex.org/T11637","display_name":"Advanced Semiconductor Detectors and Materials","score":0.9564999938011169,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T10624","display_name":"Silicon and Solar Cell Technologies","score":0.019200000911951065,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T11853","display_name":"Semiconductor materials and interfaces","score":0.015300000086426735,"subfield":{"id":"https://openalex.org/subfields/3107","display_name":"Atomic and Molecular Physics, and Optics"},"field":{"id":"https://openalex.org/fields/31","display_name":"Physics and Astronomy"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}}],"keywords":[{"id":"https://openalex.org/keywords/internal-photoemission","display_name":"internal photoemission","score":0.9120000004768372},{"id":"https://openalex.org/keywords/infrared-absorption","display_name":"infrared absorption","score":0.6430000066757202},{"id":"https://openalex.org/keywords/barrier-height","display_name":"barrier height","score":0.5690000057220459},{"id":"https://openalex.org/keywords/cutoff-wavelength","display_name":"cutoff wavelength","score":0.9039999842643738},{"id":"https://openalex.org/keywords/conduction-band","display_name":"conduction band","score":0.652999997138977},{"id":"https://openalex.org/keywords/long-wavelength-infrared-detection","display_name":"long-wavelength infrared detection","score":0.8240000009536743}],"concepts":[{"id":"https://openalex.org/C167456791","wikidata":"https://www.wikidata.org/wiki/Q4737729","display_name":"Homojunction","level":3,"score":0.9564282894134521},{"id":"https://openalex.org/C158355884","wikidata":"https://www.wikidata.org/wiki/Q11388","display_name":"Infrared","level":2,"score":0.7370127439498901},{"id":"https://openalex.org/C544956773","wikidata":"https://www.wikidata.org/wiki/Q670","display_name":"Silicon","level":2,"score":0.6319980621337891},{"id":"https://openalex.org/C49040817","wikidata":"https://www.wikidata.org/wiki/Q193091","display_name":"Optoelectronics","level":1,"score":0.5336414575576782},{"id":"https://openalex.org/C192562407","wikidata":"https://www.wikidata.org/wiki/Q228736","display_name":"Materials science","level":0,"score":0.4134824872016907},{"id":"https://openalex.org/C121332964","wikidata":"https://www.wikidata.org/wiki/Q413","display_name":"Physics","level":0,"score":0.3587024509906769},{"id":"https://openalex.org/C120665830","wikidata":"https://www.wikidata.org/wiki/Q14620","display_name":"Optics","level":1,"score":0.27916017174720764},{"id":"https://openalex.org/C79794668","wikidata":"https://www.wikidata.org/wiki/Q1616270","display_name":"Heterojunction","level":2,"score":0.11302953958511353}],"mesh":[],"locations_count":1,"locations":[{"id":"doi:10.1109/16.78390","doi":"https://doi.org/10.1109/16.78390","is_oa":false,"landing_page_url":"https://doi.org/10.1109/16.78390","pdf_url":null,"source":{"id":"https://openalex.org/S162355128","display_name":"IEEE Transactions on Electron Devices","issn_l":"0018-9383","issn":["0018-9383","1557-9646"],"is_oa":false,"is_in_doaj":false,"is_core":true,"listed_in":["cwts-core","dongbi-b","jufo-3","norway-2","poland-100","russia-white-list-1"],"host_organization":"https://openalex.org/P4310319808","host_organization_name":"Institute of Electrical and Electronics Engineers","host_organization_lineage":["https://openalex.org/P4310319808"],"host_organization_lineage_names":["Institute of Electrical and Electronics Engineers"],"type":"journal"},"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"IEEE Transactions on Electron Devices","raw_type":"journal-article"}],"best_oa_location":null,"sustainable_development_goals":[],"study_designs":[],"awards":[],"funders":[],"has_content":{"pdf":false,"grobid_xml":false},"content_urls":null,"referenced_works_count":6,"referenced_works":["https://openalex.org/W1588463743","https://openalex.org/W2054022138","https://openalex.org/W2079789186","https://openalex.org/W2091571785","https://openalex.org/W2101960437","https://openalex.org/W3121220573"],"related_works":["https://openalex.org/W3142126466","https://openalex.org/W7100527440","https://openalex.org/W2026142207","https://openalex.org/W2083735014","https://openalex.org/W2803903008","https://openalex.org/W2326445736","https://openalex.org/W3212488062","https://openalex.org/W2022139791","https://openalex.org/W4237463877","https://openalex.org/W2063589171"],"abstract_inverted_index":{"A":[0],"new":[1],"silicon":[2],"photovoltaic":[3],"infrared":[4,43],"sensor":[5,15,39],"is":[6,12,40],"proposed.":[7],"Its":[8],"basic":[9,66],"operational":[10,67],"principle":[11,68],"demonstrated.":[13],"The":[14,35,60],"consists":[16],"of":[17,37],"three":[18],"regions":[19],"with":[20],"a":[21,25,52],"homojunction":[22],"structure,":[23],"having":[24],"flexibly":[26],"designed":[27],"barrier":[28],"height":[29],"corresponding":[30],"to":[31,78],"the":[32,38,65,73],"cutoff":[33],"wavelength.":[34],"operation":[36],"based":[41],"on":[42],"absorption":[44],"and":[45,69],"internal":[46],"photoemission":[47],"by":[48],"free":[49],"electrons":[50],"in":[51,55],"conduction":[53],"band":[54],"degenerate":[56],"n/sup":[57],"++/-type":[58],"silicon.":[59],"fabricated":[61],"sensors":[62],"have":[63,70],"verified":[64],"shown":[71],"that":[72],"detectable":[74],"wavelength":[75],"range":[76],"extends":[77],"over":[79],"12":[80],"mu":[81],"m.>":[82]},"counts_by_year":[{"year":2024,"cited_by_count":1},{"year":2022,"cited_by_count":1},{"year":2016,"cited_by_count":1},{"year":2015,"cited_by_count":1}],"updated_date":"2026-10-13T10:08:12.033832","created_date":"2016-06-24T00:00:00"}